EIC FBR1010, FBR1008, FBR1006, FBR1004, FBR1002 Datasheet

FBR1000 - FBR1010

BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts

Io : 10 Amperes

FEATURES :

* High case dielectric strength

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

FBR

1000

FBR

1001

FBR

1002

FBR

1004

FBR

1006

FBR

1008

FBR

1010

Amps.

Amps.

Notes :

1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.

2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.

UPDATE : APRIL 21, 1998

* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board

* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams

FAST RECOVERY

BR10

0.520 (13.20)

0.158 (4.00)

0.142 (3.60)

0.290 (7.36)

0.210 (5.33)

0.052 (1.32)

0.048 (1.22)

0.30 (7.62)

0.25 (6.35)

Dimensions in inches and ( millimeters )

0.480 (12.20)
AC

0.77 (19.56)

0.73 (18.54)

AC

0.75 (19.1)
Min.

RATING

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55 °C IF(AV) 10
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 250
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 5.0 Amps. VF 1.3 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range TJ - 50 to + 150 °C
Storage Temperature Range TSTG - 50 to + 150 °C

SYMBOL

I2t

RθJC

160

2.5 °C/W

UNIT

A2S

RATING AND CHARACTERISTIC CURVES ( FBR1000 - FBR1010 )

+

864210

200

0

0

50

100

140

120

+ 0.5 A0- 0.25

- 1.0 A

1 cm

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50 Ω 10 Ω

D.U.T.

50 Vdc

(approx)

1 Ω

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

OSCILLOSCOPE

( NOTE 1 )

PULSE

GENERATOR

( NOTE 2 )

Trr

SET TIME BASE FOR 50/100 ns/cm

FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT

250

Tc = 55 °C

150

100

CURRENT, AMPERES

AVERAGE FORWARD OUTPUT

60Hz RESISTIVE OR INDUCTIVE LOAD

0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

CASE TEMPERATURE, ( °C)

CURRENT, AMPERES

PEAK FORWARD SURGE

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE

100 10

Pulse Width = 300 µs

2% Duty Cycle

10

1.0 0.1

0.1

TJ = 25 °C

FORWARD CURRENT, AMPERES

1.0

0.01
0 20 40 60

REVERSE CURRENT, MICROAMPERES

PERCENT OF RATED REVERSE

TJ = 100 °C

TJ = 25 °C

80

VOLTAGE, (%)

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE, VOLTS