EIC BR810, BR808, BR806, BR804, BR802 Datasheet
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BR800 - BR810
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Mounting position : Any
* Weight : 6.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C ambient temperature unless otherwise specified.
Notes :
(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
UPDATE : APRIL 23, 1998
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
* Polarity : Polarity symbols marked on case
BR10
0.520 (13.20)
0.158 (4.00)
0.142 (3.60)
0.290 (7.36)
0.210 (5.33)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
0.480 (12.20)
AC
0.77 (19.56)
0.73 (18.54)
AC
0.75 (19.1)
Min.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 4.0 Amp.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C I
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range TSTG - 40 to + 150
SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 UNIT
RRM 50 100 200 400 600 800 1000 Volts
V
F(AV)
I
FSM 300 Amps.
I
I2t
F 1.0 Volts
V
8.0 Amps.
160
A2S
IR 10 µA
R(H) 200 µ
RθJC
J - 40 to + 150 °
T
2.5 °
A
C/W
C
°
C
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK
RATING AND CHARACTERISTIC CURVES ( BR800 - BR810 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1010200
0.01
250
RECTIFIED CURRENT
12
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm) Al.-PLATE
300
TJ = 50 °C
150
AMPERES
CURRENT AMPERES
100
8.3 ms SINGLE HALF SINE WAVE
AVERAGE FORWARD OUTPUT
50
JEDEC METHOD
PEAK FORWARD SURGE CURRENT,
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
0
10 20 601 2 4 6 40 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
TJ = 100 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
T J = 25 °C
FORWARD CURRENT, AMPERES
0.01
0.6 0.8 1.0 1.2 1.8
0.4
1.4 1.6
FORWARD VOLTAGE, VOLTS
TJ = 25 °C
80
REVERSE CURRENT, MICROAMPERES
100 1400 20 40 60 120
PERCENT OF RATED
REVERSE VOLTAGE, (%)
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