BR600 - BR610
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
BR6
0.445 (11.30)
0.158 (4.00)
0.142 (3.60)
0.127 (3.20)
0.047 (1.20)
0.042 (1.06)
0.038 (0.96)
0.27 (6.9)
0.23 (5.8)
Dimensions in inches and ( millimeters )
0.405 (10.30)
AC
0.62 (15.75)
0.58 (14.73)
AC
0.75 (19.1)
Min.
RATING
Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Current Tc=50°C I
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610
RRM
RMS
DC
F(AV)
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
6.0 Amps.
Peak Forward Surge Current,
Single half sine wave Superimposed
on rated load (JEDEC Method) I
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF =3 A. V
Maximum DC Reverse Current Ta = 25 °C I
at Rated DC Blocking Voltage Ta = 100 °C I
FSM
I2t
F
R
R(H)
200 Amps.
64
1.0 Volts
10
200
Typical Thermal Resistance (Note 1) RθJC 8.0
Operating Junction Temperature Range T
Storage Temperature Range T
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
J
STG
- 40 to + 150
- 40 to + 150
UNITS
A2S
A
µ
A
µ
C/W
°
C
°
C
°
RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 )
PEAK FORWARD SURGE CURRENT,
AVERAGE FORWARD OUTPUT CURRENT,
REVERSE CURRENT, MICROAMPERES
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
6.0
240
200
AMPERES
1.0
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
160
AMPERES
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
1 2 4 6 40
NUMBER OF CYCLES AT 60Hz
TJ = 50 °C
10 20
60
100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
TJ = 100 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
0.1
TJ = 25 °C
FORWARD CURRENT, AMPERES
0.01
TJ = 25 °C
0.8 1.0 1.6
0.6
1.2 1.4 1.80.4
FORWARD VOLTAGE, VOLTS
0.01
PERCENT OF RATED REVERSE
VOLTAGE, (%)
80
100 1400 20 40 60 120