EIC BR5004W, BR5002W, BR5001W, BR5000W, BR5010W Datasheet
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FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
BR5000W - BR5010W
PRV : 50 - 1000 Volts
Io : 50 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.310 (7.87)
0.280(7.11)
1.130 (28.7)
1.120 (28.4)
0.042 (1.06)
0.038 (0.96)
SILICON BRIDGE RECTIFIERS
BR50W
0.732 (18.6)
0.692 (17.5)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc=55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 400 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance at Junction to Case ( Note 1 )
Operating Junction Temperature Range TJ - 40 to + 150
Storage Temperature Range TSTG - 40 to + 150
SYMBOL BR 5000W BR 5001W BR 5002W BR 5004W BR 5006W BR 5008W BR 5010W UNIT
IF(AV) 50 Amps.
I2t
IR 10
IR(H) 200
RθJC
664
1.0
A2S
µA
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on heat sink.
UPDATE : APRIL 21, 1998
302010
60
100
10
1.0
400
0
0
300
200
100
0.11080
0.01
1.0
0.1
100
140
0204060120
40
102060
124640
100
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
600
50
AMPERES
5
5
5
5
5
5
500
AMPERES
8.3 ms SINGLE HALF SINE WAVE
PEAK FORWARD SURGE CURRENT,
JEDEC METHOD
AVERAGE FORWARD OUTPUT CURRENT
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
TJ = 50 °C
TJ = 100 °C
FORWARD CURRENT, AMPERES
FORWARD VOLTAGE, VOLTS
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
0.01
REVERSE CURRENT, MICROAMPERES
PERCENT OF RATED REVERSE VOLTAGE, (%)
TJ = 25 °C
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