AVALANCHE BRIDGE
* High case dielectric strength
* High surge current capability
* Low forward voltage drop
* ldeal for printed circuit board
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PRV : 50 - 1000 Volts
Io : 25 Amperes
* Case : Molded plastic with heatsink integrally
BR50
0.728(18.50)
0.570(14.50)
0.530(13.40)
0.658(16.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
0.685(16.70)
0.618(15.70)
0.210(5.30)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
1.130(28.70)
1.120(28.40)
0.100(2.50)
φ
0.090(2.30)
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range TJ - 50 to + 150
Storage Temperature Range TSTG - 50 to + 150
1 ) Thermal resistance from Junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm x 15.2cm x 12.4 cm) Al. plate.
SYMBOL
VBO(min.) 100 150 250 450 700 900 1100 Volts
VBO(max.) 550 600 700 900 1150 1350 1550 Volts
IF(AV) 25 Amps.
I2t
VF 1.1 Volts
IR 10
IR(H) 200
RθJC
375
1.45
UNITS
A2S
µA
µA
°C/W
°C
°C
RATING AND CHARACTERISTIC CURVES ( ABR2500 - ABR2510 )
REVERSE CURRENT, MICROAMPERES
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
240
120
CURRENT, AMPERES
HEAT-SINK MOUNTING, Tc
5"x6"x4.9" THK
(12.8cm x 15.2cm x 12.4cm)
0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
Al. Finned Plate
CURRENT, AMPERES
PEAK FORWARD SURGE
8ms SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 55 °C
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100 10
TJ = 100 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.0 0.1
0.1
FORWARD CURRENT, AMPERES
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
TJ = 25 °C
FORWARD VOLTAGE, VOLTS
0.01
PERCENT OF RATED REVERSE
VOLTAGE, (%)
TJ = 25 °C
100 140
120