EIC ABR1010, ABR1008, ABR1006, ABR1002, ABR1004 Datasheet
...
ABR1000 - ABR1010
RECTIFIERS
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes :
1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
AVALANCHE BRIDGE
PRV : 50 - 1000 Volts
Io : 10 Amperes
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.520 (13.20)
0.158 (4.00)
0.142 (3.60)
0.290 (7.36)
0.210 (5.33)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
0.480 (12.20)
AC
0.77 (19.56)
0.73 (18.54)
AC
0.75 (19.1)
Min.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Minimum Avalanche Breakdown Voltage at 100 µA V
Maximum Avalanche Breakdown Voltage at 100 µA V
BO(min.)
BO(max.)
Maximum Average Forward Current Tc = 50°C I
ABR
1000
RRM
RMS
DC
F(AV)
ABR
1001
ABR
1002
ABR
1004
ABR
1006
ABR
1008
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
100 150 250 450 700 900 1100 Volts
550 600 700 900 1150 1350 1550 Volts
10.0 Amp.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) I
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 5.0 Amps. V
Maximum DC Reverse Current Ta = 25 °C I
at Rated DC Blocking Voltage Ta = 100 °C I
FSM
I2t
F
R
R(H)
300 Amps.
160
1.0 Volts
10
200
Typical Thermal Resistance ( Note 1 ) RθJC 2.5
Operating Junction Temperature Range T
Storage Temperature Range T
J
STG
- 50 to + 150
- 50 to + 150
UPDATE : APRIL 21, 1998
ABR
1010
UNITS
A2S
A
µ
A
µ
C/W
°
C
°
C
°
RATING AND CHARACTERISTIC CURVES ( ABR1000 - ABR1010 )
80
REVERSE CURRENT, MICROAMPERES
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
10
8.0
HEAT SINK MOUNTING ON
2.6" x 1.4" x0.06" THK.
(7.5x7.5x0.3 cm.) Al. Plate
300
240
6.0
4.0
CURRENT, AMPERES
2.0
AVERAGE FORWARD OUTPUT
0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
180
120
8.3 ms SINGLE SINE WAVE
CURRENT, AMPERES
60
PEAK FORWARD SURGE
0
JEDEC METHOD
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100 10
TJ = 100 °C
10
TJ = 25 °C
1.0
1.0
0.1
FORWARD CURRENT, AMPERES
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Pulse Width = 300 µs
1% Duty Cycle
FORWARD VOLTAGE, VOLTS
0.1
0.01
PERCENT OF RATED REVERSE
VOLTAGE, (%)
TJ = 25 °C
100 1400 20 40 60 120
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