DYNEX MP04HBT490-26, MP04HBP490-28, MP04HBP490-24, MP04HBP490-26, MP04HBN490-28 Datasheet

MP04---490

1/9

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Code

Circuit

HBT

HBP

HBN

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

ORDERING INFORMATION

Order As:

MP04HBT490-28 or MP04HBT490-26 or MP04HBT490-24 MP04HBP490-28 or MP04HBP490-26 or MP04HBP490-24 MP04HBN490-28 or MP04HBN490-26 or MP04HBN490-24

Note: When ordering, please use the whole part number.

KEY PARAMETERS V

DRM

2800V

I

T(AV)

490A

I

TSM(per arm)

11250A

V

isol

3000V

MP04---490

Dual Thyristor, Thyristor/Diode Module

Advance Information

Replaces Jun3 2000 version, DS5204-1.2 DS5204-2.1 April 2001

Fig. 2 Electrical connections - (not to scale)

2800 2600 2400

MP04---490-28 MP04---490-26 MP04---490-24

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 50mA

V

DSM

= V

RSM

=

V

DRM

= V

RRM

+ 100V

respectively

Lower voltage grades available.

Type Number Repetitive Peak

Voltages V

DRM VRRM

V

Fig.1 Circuit diagrams

Module type code: MP04.

For further information see Package Details.

MP04---490

2/9

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Test Conditions

Half wave resistive load T

case

= 75˚C

T

case

= 85˚C

T

case

= 75˚C

10ms half sine, T

j

= 125˚C

V

R

= 0

10ms half sine, T

j

= 125˚C

V

R

= 50% V

DRM

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Units

A

kA

A

2

s

kA

A

2

s

V

Max.

490

420

770

11.25

633 x 10

3

9

506 x 10

3

3000

Test Conditions

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

Mounting torque = 5Nm

with mounting compound

Reverse (blocking)

-

Mounting - M6

Electrical connections - M10

-

Parameter

Thermal resistance - junction to water

(per thyristor or diode)

Thermal resistance - case to heatsink

(per thyristor or diode)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

THERMAL AND MECHANICAL RATINGS

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Parameter

Mean on-state current

RMS value

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Isolation voltage

Symbol

R

th(j-c)

R

th(c-hs)

T

vj

T

stg

-

Units

˚C/kW

˚C

Nm (lb.ins)

g

Max.

0.056

0.060

0.066

0.02

125

130

6 (35)

12 (106)

1580

Min.

-

–40

-

MP04---490

3/9

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Units

mA

V/µs

A/µs

V

mΩ

Test Conditions

At V

RRM/VDRM

, Tj = 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

to 1500A, gate source 1.5A,

t

r

= 0.5µs, Tj = 125˚C

At T

vj

= 125˚C. See note 1

At T

vj

= 125˚C. See note 1

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Max.

50

1000

500

0.91

0.65

Min.

-

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3.5

200

0.25

30

0.25

5

10

150

10

Units

V

mA

V

A

W

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.