DYNEX MP03-330-12, MP03-330-08, MP03-330-10 Datasheet

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MP03 XXX 330 Series

Code

Circuit

HBT

HBP

HBN

MP03/330 - 12 MP03/330 - 10 MP03/330 - 08

Symbol Max.

Units

334 289

A A

Conditions

259

case

= 75oC

heatsink

= 75oC

heatsink

= 85oC

case

= 85oC

case

= 75oC

T(RMS)

RMS value

223

A525

Mean on-state current

Halfwave, resistive load

T(AV)

1200 1000

800

(vj)

= 130oC

DRM

= I

RRM

= 30mA

DSM

& V

RSM

DRM

& V

RRM

+ 100V

respectively

Module type code: MP03.

See Package Details for further information

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

KEY PARAMETERS

DRM

1200V

TSM

10600A

T(AV)

(per arm) 334A

isol

2500V

VOLTAGE RATINGS

Type

Number

Repetitive

Peak Voltages V

DRM VRRM

CURRENT RATINGS - PER ARM

Parameter

Lower voltage grades available. For full description of part number see "Ordering instructions" on page 3.

Conditions

PACKAGE OUTLINE

CIRCUIT OPTIONS

MP03 XXX 330 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS4483-4.0 DS4483-5.0 January 2000

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MP03 XXX 330 Series

Symbol Parameter Conditions Max. Units

VR = 0 VR = 50% V

RRM

VR = 0 VR = 50% V

RRM

A2s

10.6

Symbol Parameter Conditions

Thermal resistance - case to heatsink per thyristor or diode

3 phase

Max.

Symbol

Peak reverse and off-state current

From 67% V

DRM

to 600A Gate source 10V, 5Ω Rise time 0.5µs, Tj =130oC

* Higher dV/dt values available, contact factory for particular requirements. Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.

8.5

0.56 x 106A2s

0.36 x 10

10ms half sine;

Tj = 130˚C

10ms half sine;

Tj = 130˚C

Surge (non-repetitive) on-state current

TSM

I2t for fusing

I2t

Thermal resistance - junction to case per Thyristor or Diode

halfwave

th(j-c)

th(c-hs)

Mounting torque = 5Nm with mounting compound

Virtual junction temperature Off-state (Blocking)

stg

Storage temperature range

Commoned terminals to base plate AC RMS, 1min, 50Hz

Isolation voltageV

isol

0.11

C/W

0.12

2.5 kV

-40 to 130oC

C130

0.05

C/W

0.13

C/W

Units

Conditions

Max.

At 1000A, T

case

= 25oC 1.50 V

At V

RRM/VDRM

, Tj = 130oC30mA

To 67% V

DRM Tj

= 130oC 200* V/µs

100 A/µs

0.8 VAt Tvj = 130oC

0.7

mΩ

At Tvj = 130oCOn-state slope resistance

T(TO)

Threshold voltage

Rate of rise of on-state current

dI/dt

Linear rate of rise of off-state voltagedV/dt

RRM/IDRM

On-state voltage

THERMAL & MECHANICAL RATINGS

DYNAMIC CHARACTERISTICS- THYRISTOR

SURGE RATINGS - PER ARM

Units

Parameter

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MP03 XXX 330 Series

Symbol Parameter Conditions

Gate non-trigger voltage

3.0

0.25

Typ.

Gate trigger voltage

150

Gate trigger current

At V

DRM Tcase

= 25oC

DRM

= 5V, T

case

= 25oC

DRM

= 5V, T

case

= 25oC

0.25

RGM

Peak reverse gate voltage

V5.0A-

FGM

Peak forward gate current

Peak forward gate voltage

FGM

FGN

Peak forward gate voltage

Anode positive with respect to cathode Anode negative with respect to cathode

Anode positive with respect to cathode

G(AV)

Peak gate power Mean gate power

tp = 25µs-

100

W W

Max. Units

■ Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of V

T(TO)

and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required.

■ The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended.

■ Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain.

■ An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance.

■ After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 5Nm (44lb.ins) is reached at both ends.

■ It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.

GATE TRIGGER CHARACTERISTICS AND RATINGS

MOUNTING RECOMMENDATIONS

Examples: MP03 HBP330 - 08

MP03 HBN330 - 12 MP03 HBT330 - 08

Part number is made up of as follows: MP03 HBT 330 -10

MP = Pressure contact module 03 = Outline type HBT = Circuit configuration code (see "circuit options" - front page) 330 = Nominal average current rating at T

case

= 75oC

10 = V

RRM

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NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN

Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

ORDERING INSTRUCTIONS

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