Diodes SBR02M30LP User Manual
Features
• Ultra Low Leakage Current
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 175ºC Operating Junction Temperature
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Mechanical Data
• Case: DFN1006-2
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Polarity Indicator: Cathode Dot
• Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.001 grams (Approximate)
Top View Bottom View
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
I
FSM
SBR02M30LP
0.2A SBR
®
SUPER BARRIER RECTIFIER
30 V
21 V
0.2 A
5.0 A
Thermal Characteristics
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop
Leakage Current (Note 4)
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical R
3. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
SBR02M30LP
Document number: DS31061 Rev. 5 - 2
Characteristic Symbol Value Unit
R
JS
θ
R
JA
θ
T
, T
J
STG
= 25°C unless otherwise specified
A
V
(BR)R
V
F
I
R
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
θJS
30 - - V
0.50
-
0.42
0.57
0.51
-
0.1
46
0.54
0.45
0.61
0.54
0.5
150
18
263
-65 to +175 ºC
V
µA
1 of 3
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I
= 400µA
R
= 0.1A, TJ = 25ºC
I
F
I
= 0.1A, TJ = 150ºC
F
= 0.2A, TJ = 25ºC
I
F
I
= 0.2A, TJ = 150ºC
F
= 30V, TJ = 25ºC
V
R
= 30V, TJ = 150ºC
V
R
ºC/W
March 2008
© Diodes Incorporated
P, P
OWER
PATIO
0.4
0.3
N (W)
0.2
DISSI
0.1
D
NEW PRODUCT
0
T =150°C
J
0 0.1 0.2 0.3 0.4 0.5
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
SBR02M30LP
100
f=1.0MHz
0.25
0.2
0.15
0.1
0.05
Note 3
10
T
C , TOTAL CAPACITANCE (pF)
1
0 5 10 15 20 25 30
V , DC REVERSE VOL TAGE (V)
R
Fig. 4 Total Capacitance vs. Reverse Voltage
F(AV)
I , A VERAGE FORWARD CURRENT(A)
0
0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 Forward Current Derating Curve
BR is a registered trademark of Diodes Incorporated.
S
SBR02M30LP
Document number: DS31061 Rev. 5 - 2
175 200
www.diodes.com
2 of 3
March 2008
© Diodes Incorporated
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