DIODES SBL2035PT, SBL2040PT, SBL2030PT, SBL2060PT, SBL2045PT Datasheet
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Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material - UL Flammability
·
Classification 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 5.6 grams (approx)
· Mounting Position: Any
· Marking: Type Number
SBL2030PT - SBL2060PT
20A SCHOTTKY BARRIER RECTIFIER
TO-3P
Dim Min Max
3.20 3.50
A
4.59 5.16
B
20.80 21.30
C
19.70 20.20
D
2.10 2.40
E
0.51 0.76
G
15.90 16.40
H
1.70 2.70
J
3.10 Æ 3.30 Æ
K
3.50 4.51
L
5.20 5.70
M
1.12 1.22
N
1.93 2.18
P
2.97 3.22
Q
11.70 12.80
R
S
All Dimensions in mm
4.30 Typical
S
R
P*
*2 Places
N
A
H
J
K
L
Q
G
M
M
B
C
D
E
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop @ IF=10A, TC= 25°C
Peak Reverse Current @TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
= 100°C
C
= 100°C
C
V
V
V
T
RRM
RWM
V
R
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJc
j,TSTG
2030PT
@ TA= 25°C unless otherwise specified
SBL
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
SBL
2035PT
SBL
2040PT
0.55 0.75 V
-65 to +150 °C
SBL
2045PT
20 A
250 A
1.0
50
1100 pF
2.5 K/W
SBL
2050PT
SBL
2060PT
Unit
mA
DS23047 Rev. B-2 1 of 2 SBL2030PT-SBL2060PT
100
g
300
g
000
g
100
g
20
g
(AV)
I , AVERAGE FORWARD CURRENT (A)
16
12
8
4
0
0 50 100 150
T , CASE TEMPERATURE (°C)
C
Fi
. 1 Forward Current DeratingCurve
8.3 ms single half-sine-wave
JEDEC method
250
200
SBL2030PT - SBL20450PT
10
SBL2050PT - SBL2060PT
1.0
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.1 0.3 0.5 0.7 0.9
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics per Element
4
1000
T = 25°C
j
Pulse width = 300 µs
2% duty cycle
T = 25°C
j
f = 1MHz
FSM
I , PEAK FORWARD CURRENT (A)
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60Hz
. 3 Maximum Non-Repetitive Surge Current
Fi
10
1.0
0.1
T = 100°C
j
T = 75°C
j
T = 25°C
j
j
C , CAPACITANCE (pF)
100
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
Fi
R
.4 Typical Junction Capacitance per Element
0.01
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics per Element
Fi
DS23047 Rev. B-2 2 of 2 SBL2030PT-SBL2060PT
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