DIODES SBL1630PT, SBL1635PT, SBL1640PT, SBL1645PT, SBL1650PT Datasheet

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Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity Protection Application
Plastic Material - UL Flammability
·
Classification 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 5.6 grams (approx)
· Mounting Position: Any
· Marking: Type Number
SBL1630PT - SBL1660PT
16A SCHOTTKY BARRIER RECTIFIER
TO-3P
Dim Min Max
3.20 3.50
A
4.59 5.16
B
A
20.80 21.30
C
B
D
E
G
C
H
J
3.10 Æ 3.30 Æ
K
L
D
M
N
P
Q
R
S
All Dimensions in mm
19.70 20.20
2.10 2.40
0.51 0.76
15.90 16.40
1.70 2.70
3.50 4.51
5.20 5.70
1.12 1.22
1.93 2.18
2.97 3.22
11.70 12.80
4.30 Typical
S
R
P*
*2 Places
N
H
J
K
Q
G
E
M
M
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage Drop @ IF= 8.0A, TC= 25°C
Peak Reverse Current @TC= 25°C at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
= 95°C
C
= 100°C
C
V V
V
R(RMS)
T
j,TSTG
RRM RWM
V
I
FSM
V
I
RM
C
R
1630PT
R
I
O
FM
j
qJc
@ TA= 25°C unless otherwise specified
SBL
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
SBL
1635PT
SBL
1640PT
0.55 0.70 V
-65 to +150 °C
SBL
1645PT
16 A
250 A
0.5 50
700 pF
3.5 K/W
SBL
1650PT
SBL
1660PT
Unit
mA
DS23046 Rev. B-2 1 of 2 SBL1630PT-SBL1660PT
100
g
300
g
100
g
16
20
g
000
g
12
8
4
(AV)
I , AVERAGE FORWARD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE (°C)
C
Fi
. 1 Forward Current DeratingCurve
F
I , INSTANTANEOUS FORWARD CURRENT (A)
10
1.0
0.1
SBL1630PT - SBL1645PT
SBL1650PT - SBL1660PT
T = 25°C
j
Pulse width = 300 µs
2% duty cycle
0.2 0.4 V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics per Element
0.6 0.8
FSM
I , PEAK FORWARD SURGE CURRENT (A)
250
200
150
100
50
8.3 ms single half-sine-wave JEDEC method
4
T = 25°C
j
1000
J
C , CAPACITANCE (pF)
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
. 3 Max Non-Repetitive Surge Current
Fi
10
T = 100°C
j
T = 75°C
j
100
0.1 1.0 10 100 V , REVERSE VOLTAGE (V)
Fi
R
.4 Typical Junction Capacitance per Element
1.0
T = 25°C
40
j
80 120
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0.01
0.1
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics per Element
Fi
DS23046 Rev. B-2 2 of 2 SBL1630PT-SBL1660PT
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