Description
The PAM8803 is a 3W, class-D audio amplifier with 64-step digital
volume control. It offers low THD+N, allowing it to produce high-
quality sound reproduction. The new filterless architecture allows the
device to drive the speaker directly, without needing low-pass output
filters which will save 30% system cost and 75% PCB area.
With the same numbers of external components, the efficiency of the
PAM8803 is much better than class-AB cousins. It extends battery
life, making it ideal for portable applications.
The PAM8803 is available in a SSOP-24 package.
Features
3W FILTERLESS STEREO CLASS-D AUDIO
AMPLIFIER WITH DIGITAL VOLUME CONTROL
Pin Assignments
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PAM8803
3W Output at 10% THD with a 4Ω Load and 5V Power Supply
Filterless, Low Quiescent Current and Low EMI
Low THD+N
64-Step Digital Volume Control
Superior Low Noise
Low Pop Noise
Efficiency up to 90%
Short Circuit Protection
Thermal Shutdown
Few External Components to Save Space and Cost
Pb-Free Packages
Typical Applications Circuit
Applications
LCD Monitors/TV Projectors
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
Cellular Phones/Speaker Phones
PAM8803
Document number: DSxxxxx Rev. 1 - 4
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Pin Descriptions
Pin
Number
1 -OUT_L Left Channel Negative Output
2 PGND Power GND
3 PGND Power GND
4 +OUT_L Left Channel Positive Output
5 PVDD Power VDD
6 MUTE Mute Control Input (active low), pull-up
7 VDD Analog VDD
8 INL Left Channel Input
9 NC No Connect
10 VREF Internal analog reference, connect a bypass capacitor from VREF to GND
11 NC No Connect
12 NC No Connect
13 DN Volume down Control (active low)
14 UP Volume up Control (active low)
15 RST Volume Controller Reset (active low)
16 NC No Connect
17 INR Right Channel Input
18 GND Analog GND
19 SHDN Shutdown Control Input (active low), pull-down
20 PVDD Power VDD
21 +OUT_R Right Channel Positive Output
22 PGND Power GND
23 PGND Power GND
24 -OUT_R Right Channel Negative Output
Pin
Name
Function
Functional Block Diagram
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PAM8803
PAM8803
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PAM8803
Absolute Maximum Ratings (@T
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability.
All voltages are with respect to ground.
Parameter Rating Unit
Supply Voltage at No Input Signal 6.0
Input Voltage
Maximum Junction Temperature 150
Storage Temperature -65 to +150
Soldering Temperature 300, 5sec
Recommended Operating Conditions (@T
Parameter Rating Unit
Supply Voltage Range 2.2 to 5.5 V
Ambient Temperature Range -40 to +85 °C
Junction Temperature Range -40 to +125 °C
= +25°C, unless otherwise specified.)
A
-0.3 to V
DD
+0.3
= +25°C, unless otherwise specified.)
A
V
°C
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient) SSOP-24
PAM8803
Document number: DSxxxxx Rev. 1 - 4
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θ
JA
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96 °C/W
November 2012
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PAM8803
Electrical Characteristics (@T
Parameter Symbol Test Conditions Min Typ Max Units
Supply Voltage Range
Quiescent Current
Mute Current
Shutdown Current
SHDN Input High
SHDN Input Low
MUTE Input High
MUTE Input Low
Output Offset Voltage
Drain-Source On-State Resistance
Output Power
Total Harmonic Distortion Plus Noise THD+N
Power Supply Ripple Rejection PSRR
Channel Separation CS
Oscillator Frequency
Efficiency η
Signal Noise Ratio SNR
Under Voltage Lock-Out UVLO 1.95 V
Over Temperature Protection OTP 150 °C
Over Temperature Hysteresis OTH 60 °C
PAM8803
Document number: DSxxxxx Rev. 1 - 4
= +25°C, VDD = 5V, Gain = 18dB, RL = 8Ω , unless otherwise specified.)
A
DD
V
2.2 5.5 V
No Load 7 15
8
8.5
2.5 4 mA
0.5 10 µA
1.1 1.3
1.5 1.7
1.9 2.1
2.8 3.0
0.19
0.22
0.17
0.25
45 55 dB
60 80 dB
85 89 %
80 83 %
85 dB
87 dB
I
MUTE
I
SHDN
V
V
V
V
V
R
DS(ON)
f
I
Q
SH
SL
MH
ML
OS
P
OSC
O
RL = 8Ω
RL = 4Ω
V
V
I DS = 0.5A
= 0V
MUTE
= 0V
SHDN
1.2
0.5
1.2
0.5
No Load 120 300 mV
PMOSFET 0.3 0.40
N MOSFET 0.22 0.35
= 8Ω , THD =1%
R
L
f =1kHz
RL = 8Ω , THD = 10%
RL = 4Ω , THD = 1%
RL = 4Ω , THD = 10%
= 8Ω, P O = 0.5W
R
L
RL = 8Ω, P O = 1.0W
RL = 4Ω, P O = 1.0W
RL = 4Ω, P O = 2.0W
No Input, f = 1kHz, V
P
= 1W, RL = 4Ω
O
170 210 250 kHz
P
= 1.7W, f = 1kHz, RL = 8Ω
O
= 200mV
PP
PO = 3.0W, f = 1kHz, RL = 4Ω
R
f = 22 to 22kHz
THD = 1%
= 4Ω
L
RL = 8Ω
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mA
V
V
Ω
W
%
November 2012
© Diodes Incorporated
Typical Performance Characteristics (@T
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= +25°C, unless otherwise specified.)
A
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PAM8803
PAM8803
Document number: DSxxxxx Rev. 1 - 4
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