Diodes PAM8404 User Manual
f
3W/CH FILTERLESS STEREO CLASS-D AUDIO AMPLIFIER
Description
The PAM8404 is a 3W high efficiency filterless Class-D audio
amplifier in 4mmX4mm and 2mmX2mm wafer chip scale (WCSP)
packages that requires few external components.
Features like 89% efficiency, -63dB PSRR, improved RF-rectification
immunity, and very small PCB area make the PAM8404 Class-D
amplifier ideal for cellular handset and PDA applications.
In cellular handsets, the earpiece, speaker phone, and melody ringer
can each be driven by the PAM8404. The PAM8404 allows
independent gain by summing signals from seperate sources, and
has as low as 43µV noise floor.
PAM8404 is available in QFN 4mmx4mm and WCSP 2mmx2mm
packages.
Features
3W Output at 10% THD with a 4 Load and 5V Supply
Supply Voltage from 2.5V to 5.5V
Efficiency Up to 89%
Superior Low Noise without Input
Few External Components to Save the Space and Cost
Short Circuit Protection
Thermal Shutdown
Space Saving Packages :
2mm X 2mmWCSP
4mm X 4mm Thin QFN
Pb-Free Packages
Applications
Pin Assignments
A Product Line o
Diodes Incorporated
PAM8404
LCD Monitor / TV Projector
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
Cellular Phones/Speaker Phones
PAM8404
Document number: DSxxxxx Rev. 1 - 1
1 of 18
www.diodes.com
November 2012
© Diodes Incorporated
f
Typical Applications Circuit
A Product Line o
Diodes Incorporated
PAM8404
Pin Descriptions
Pin
Name
G1 1 B2 Gain Select (MSB)
OUTL+ 2 A3 Left Channel Positive Differential Output
PVDD 313 A2 Power Supply (Must be Same Voltage as AVDD)
PGND 412 C4 Power Ground
OUTL- 5 A4 Left Channel Negative Differential Output
NC 610 — Not Connected
SDL 7 B4 Left Channel Shutdown Terminal (active low)
SDR 8 B3 Right Channel Shutdown Terminal (active low)
AVDD 9 D2 Analog Supply (Must be Same Voltage as PVDD)
OUTR- 11 D4 Right Channel Negative Differential Output
OUTR+ 14 D3 Right Channel Positive Differential Output
G0 15 C2 Gain Select (LSB)
INR+ 16 D1 Right Channel Positive Input
INR- 17 C1 Right Channel Negative Input
AGND 18 C3 Analog Ground
INL- 19 B1 Left Channel Negative Input
INL+ 20 A1 Left Channel Positive Input
QFN4x4 WCSP2x2
PAM8404
Document number: DSxxxxx Rev. 1 - 1
Pin Number
2 of 18
www.diodes.com
Function
November 2012
© Diodes Incorporated
f
Functional Block Diagram
A Product Line o
Diodes Incorporated
PAM8404
Absolute Maximum Ratings (@T
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter Rating Unit
Supply Voltage 6.0
Input Voltage
Maximum Junction Temperature 150
Storage Temperature -65 to +150
Soldering Temperature 250, 10sec
Recommended Operating Conditions (@T
Parameter Rating Unit
Supply Voltage Range 2.5 to 5.5 V
Operation Temperature Range -40 to +85 °C
Junction Temperature Range -40 to +125 °C
PAM8404
Document number: DSxxxxx Rev. 1 - 1
= +25°C, unless otherwise specified.)
A
-0.3 to V
+0.3
DD
= +25°C, unless otherwise specified.)
A
3 of 18
www.diodes.com
V
°C
November 2012
© Diodes Incorporated
f
A Product Line o
Diodes Incorporated
PAM8404
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
WCSP2x2-16
QFN4x4-20 31
WCSP2x2-16
QFN4x4-20 13
JA
JC
Electrical Characteristics (@T
= +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
A
QFN4X4-20
Symbol Parameter Test Conditions Min Typ Max Units
VDD
Supply Power
THD+N = 10%, f = 1kHz, R
= 4
L
THD+N = 1%, f = 1kHz, RL = 4
PO
Output Power
THD+N = 10%, f = 1kHz, RL = 8
THD+N = 1%, f = 1kHz, RL = 8
= 5.0V, Po = 0.5W, RL = 8
V
DD
V
= 3.6V, Po = 0.5W, RL = 8
THD+N
Total Harmonic Distortion Plus
Noise
PSRR Power Supply Ripple Rejection
CS
Crosstalk
SNR Signal-to-Noise
VN
Output Noise
DD
V
= 5.0V, Po = 1W, RL = 4
DD
V
= 3.6V, Po = 1W, RL = 4
DD
V
= 5.0V, Inputs AC-Grounded with
DD
= 1.0F
C
IN
V
= 5V, Po = 0.5W, RL = 4,
DD
Gv = 23dB
V
= 5V, V
DD
= 5V, Inputs AC-Grounded with
V
DD
= 1F
C
IN
= 1VGv = 23dB
ORMS
BW 22Hz – 22kHz No A-weighting 59
Dyn Dynamic Range
Efficiency
Quiescent Current
IQ
ISD
R
DS(ON)
Shutdown Current
Static Drain-to-Source On-State
Resistor
fsw Switching Frequency
VOS
Output Offset Voltage
Gain Closed-Loop Voltage Gain
OTP Over Temperature Protection
OTH Over Temperature Hysterisis 50
V
= 5V, THD = 1%
DD
R
= 8, THD = 10%
L
RL = 4, THD = 10%
= 5.0V
V
DD
V
= 3.6V
DD
V
= 5.5V VSD = 0.3V
DD
I
= 500mA,VGS = 5V
DS
V
= 3V to 5V
DD
V
= 0V, V
IN
V
= 5V, RL = 4, f = 1kHz
DD
DD
= 5V
No Load, Junction Temperature
64
—
°C/W
2.5 5.5 V
= 5.0V
V
DD
VDD = 3.6V
= 5.0V
V
DD
VDD = 3.6V
= 5.0V
V
DD
VDD = 3.6V
= 5.0V
V
DD
VDD = 3.6V
f = 1kHz
f = 1kHz
f = 100kHz -48
f = 1kHz -63
3
1.5
2.35
1.2
1.7
0.9
1.4
0.7
0.15
0.27
0.23
0.24
W
W
W
W
%
%
dB
f = 1kHz -93 dB
A-weighting 87 dB
A-weighting 43
µV
A-weighting 97 dB
f = 1kHz
No load
89
84
11
6
%
mA
< 1 µA
PMOS 250
NMOS 170
m
300 kHz
10 mV
G0 = L, G1 = L 6
G0 = H, G1 = L 12
G0 = L, G1 = H 18
dB
G0 = H, G1 = H 24
V
= 5V
DD
150
°C
PAM8404
Document number: DSxxxxx Rev. 1 - 1
4 of 18
www.diodes.com
November 2012
© Diodes Incorporated
f
A Product Line o
Diodes Incorporated
PAM8404
Electrical Characteristics (@T
WCSP2x2-16
Symbol Parameter Test Conditions Min Typ Max Units
VDD
PO
THD+N
PSRR Power Supply Ripple Rejection
CS
SNR Signal-to-Noise
VN
Dyn Dynamic Range
ISD
R
DS(ON)
fsw Switching Frequency
VOS
Gain Closed-Loop Voltage Gain
OTP Over Temperature Protection
OTH Over Temperature Hysterisis 50
PAM8404
Document number: DSxxxxx Rev. 1 - 1
Supply Power
Output Power
Total Harmonic Distortion Plus
Noise
Crosstalk
Output Noise
Efficiency
Quiescent Current
IQ
Shutdown Current
Static Drain-to-Source On-State
Resistor
Output Offset Voltage
= +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
A
= 5.0V
V
THD+N = 10%, f = 1kHz, R
= 4
L
THD+N = 1%, f = 1kHz, RL = 4
THD+N = 10%, f = 1kHz, RL = 8
THD+N = 1%, f = 1kHz, RL = 8
= 5.0V, Po = 0.5W, RL = 8
V
DD
V
= 3.6V, Po = 0.5W, RL = 8
DD
V
= 5.0V, Po = 1W, RL = 4
DD
V
= 3.6V, Po = 1W, RL = 4
DD
V
= 5.0V, Inputs AC-Grounded with
DD
C
= 1.0F
IN
V
= 5.0V, Po = 0.5W, RL = 4,
DD
Gv = 23dB
V
= 5V, V
DD
= 5V, Inputs AC-Grounded with
V
DD
= 0.47F
C
IN
= 1VGv = 23dB
ORMS
DD
VDD = 3.6V
= 5.0V
V
DD
VDD = 3.6V
= 5.0V
V
DD
VDD = 3.6V
= 5.0V
V
DD
VDD = 3.6V
f = 1kHz
f = 1kHz
f = 217kHz -50 dB
f = 1kHz -70 dB
A-weighting 85 dB
A-weighting 34
2.5 5.5 V
2.2
1.2
1.8
1
1.5
0.8
1.2
0.6
0.3
0.4
0.3
0.2
W
W
W
W
%
%
µV
BW 22Hz – 22kHz No A-weighting 54
V
= 5V, THD = 1%
DD
R
= 8, THD = 10%
L
RL = 4, THD = 10%
= 5.0V
V
DD
V
= 3.6V
DD
V
= 2.5V to 5.5V VSD = 0.3V
DD
I
= 500mA,VGS = 5V
DS
V
= 5V
DD
V
= 0V, V
IN
DD
= 5V
A-weighting 98 dB
f = 1kHz
No load
85
75
12
7
%
mA
< 1 µA
PMOS 500
NMOS 460
m
300 kHz
20 mV
G0 = L, G1 = L 6
V
= 5V, RL = 4, f = 1kHz
DD
G0 = H, G1 = L 12
G0 = L, G1 = H 18
dB
G0 = H, G1 = H 24
No Load, Junction Temperature
V
= 5V
DD
150
°C
5 of 18
www.diodes.com
November 2012
© Diodes Incorporated
f
Typical Performance Characteristics (@T
QFN4X4-20
Diodes Incorporated
= +25°C, unless otherwise specified.)
A
A Product Line o
PAM8404
PAM8404
Document number: DSxxxxx Rev. 1 - 1
www.diodes.com
6 of 18
November 2012
© Diodes Incorporated
Loading...