Diodes PAM8320 User Manual

A PRODUCT LINE OF

DIODES INCORPORATED

PAM8320

Description

The PAM8320 is an efficient 20W mono Class-D audio power amplifier, designed to drive speakers as low as 4Ω in a bridge-tiedload configuration. Due to the low power dissipation and high efficiency of up to 95%, the device can be used without any external heat sink whilst playing music.

The PAM8320 features short circuit protection, thermal shutdown, over voltage protection and under voltage lock-out.

The PAM8320 is available in a SO-16EP package.

Features

New Product

 Operates from 4.5V to 15V  20W into 4Ω BTL Load from 12V Supply  Single-Ended Analog Input  No Pop Noise for Start-up and Shut-down Sequences  Internal Oscillator (No External Components Required)  High Efficient Class-D Operation Eliminates Need for Heat Sinks  Thermal and Short-Circuit Protection with Auto Recovery  Over Voltage Protection and Under Voltage Lock-out  Space-Saving Surface-Mount SO-16EP Package  Pb-Free Package

Pin Assignments

PVCCN

SDN

IN

VCM

AGND

VCLAM P

PVCCP

Applications

 PC Speaker  Blue Tooth Speaker  Home Sound Systems  Active Speakers  Docking stations

20W Mono Class D Audio Amplifier

SO-16EP

1

2 3 4 5

6 7 8

XXXYWWLL

PAM8320

16 15 14 13

12 11 10

9

PGNDN

OUT N BSN

AV C C MUTE

BSP OUT P PGNDP

Typical Applications Circuit

PAM8320

Document number: DS36610 Rev. 1 - 2

1 of 11

www.diodes.com

October 2013

A PRODUCT LINE OF

DIODES INCORPORATED

Pin Descriptions

Pin Name I/O/P Description

1 PVCCN P Power supply for negative H-bridge, not connected to PVCCP or AVCC

PAM8320

2 SDN I

3 IN I Audio input

4 VCM O Reference for analog cells

5,6 AGND P Analog ground for digital/analog cells in core

7 VCLAMP P

8 PVCCP P Power supply for positive H-bridge, not connected to PVCCN or AVCC

9 PGNDP P Power ground for positive H-bridge

10 OUTP O Positive BTL output

New Product

11 BSP I/O Bootstrap terminal for high-side drive of positive BTL output

12 MUTE I

13 AVCC P High-voltage analog power supply

14 BSN I/O Bootstrap terminal for high-side drive of negative BTL output

15 OUTN O Negative BTL output

16 PGNDN P Power ground for negative H-bridge

Functional Block Diagram

Shutdown signal for IC (low=shutdown, high=operational). TTL logic levels with compliance to AVCC

Internally generated voltage supply for bootstrap. Not to be used as a supply or connected to any component other than the decoupling capacitor.

A logic high on this pin disables the outputs. A low on this pin enables the outputs. TTL logic levels with compliance to AVCC

PAM8320

Document number: DS36610 Rev. 1 - 2

2 of 11

www.diodes.com

October 2013

A PRODUCT LINE OF

DIODES INCORPORATED

PAM8320

Absolute Maximum Ratings (@T

Parameter Rating Unit

Supply Voltage (VCC)

Logic Input Voltage (SDN, MUTE)

Analog Input Voltage (IN)

Storage Temperature -65 to +150

Maximum Junction Temperature +150

Junction to ambient thermal resistance 40

Recommended Operating Conditions (@T

Symbol Parameter Min Max Unit

VCC

New Product

TA

TJ

Electrical Characteristics (@T

Symbol PARAMETER Test Conditions MIN TYP MAX Units

|VOS|

Class-D output offset voltage(measured differently)

Operating Ambient Temperature Range -40 +85 °C

Junction Temperature Range -40 +125 °C

A

= +25°C, unless otherwise specified.)

A

18

-0.3 to V

-0.3 to 5.5

Supply Voltage 4.5 15 V

= +25°C, VCC = 12V, Gain = 20dB, RL = L(33μH) + R + L(33μH), unless otherwise noted.)

+0.3

CC

= +25°C, unless otherwise specified.)

A

=0V, Av=20dB

V

i

— 20 100 mV

V

°C

°C/W

I

CC(q)

I

CC(MUTE)

I

CC(SDN)

R

ds(on)

P

SRR

Po

THD+N Total harmonic distortion + noise

Vn

SNR Signal-to-noise ratio

OTP Thermal trip point — — +160 — °C

OTH Thermal hysteresis — — +40 — °C

f

osc

V

IH_SDN

V

IL_SDN

V

IH_MUTE

V

IL_MUTE

Quiescent supply current SDN=3.0V, MUTE=0V, No Load — 15 30 mA

Quiescent supply current in mute mode MUTE=2.0V, No load — 8 20 mA

Quiescent current in shutdown mode SDN=0.5V, No load — 20 40 uA

Drain-source on-state resistance

Power Supply Rejection Ratio

Output Power at 1% THD+N f=1kHz — 15 —

Output Power at 10% THD+N f=1kHz — 20 —

Output integrated noise floor

Oscillator frequency — — 300 — kHz

SDN Input High — 3 — — —

SDN Input Low

MUTE Input High

MUTE Input Low — — — 0.5 —

IO=0.5A

V

=200mVpp, f=1kHz,gain=20dB

ripple

f=1kHz, P

20Hz to 22kHz, A-weighted, Gain=20dB

Max output at THD+N<1%, f=1kHz, Gain=20dB

— — — 0.5 —

— 2 — — —

=7W

O

— 150 — mΩ

— -60 — dB

— 0.05 — %

— 300 — uV

— 95 — dB

W

PAM8320

Document number: DS36610 Rev. 1 - 2

3 of 11

www.diodes.com

October 2013

A PRODUCT LINE OF

DIODES INCORPORATED

PAM8320

Performance Characteristics (@T

THD+N Vs. Output Power (RL=4Ω) THD+N Vs. Output Power (RL=8Ω)

50

20

10

5

2

%

1

0.5

0.2

0.1

0.04 1m 402m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20

New Product

THD+N Vs. Frequency PSRR Vs. Frequency

20

PO=1W/2W/3W

10

(Pink/Blue/Red)

5

2

1

0.5

%

0.2

0.1

0.05

0.02

0.01 20 20k50 100 200 500 1k 2k 5k 10k

Frequency Response Noise Floor

+30

+29.5

+29

+28.5

+28

+27.5

+27

+26.5

+26

d

+25.5

B

+25

g

+24.5

A

+24

+23.5

+23

+22.5

+22

+21.5

+21

+20.5

+20

20 20k50 100 200 500 1k 2k 5k 10k

PAM8320

Document number: DS36610 Rev. 1 - 2

= +25°C, V

A

TTTTTT

W

Hz

= 12V, Gain = 20dB, RL = L(33μH) + R + L(33μH), unless otherwise noted.)

DD

60

20

10

5

2

%

1

0.5

0.2

0.1

0.05

0.03

d B

d

B

r

A

4 of 11

www.diodes.com

1m 202m 5m 10m 20 m 50m 100 m 200m 500m 1 2 5 10

+0

TTT T T

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

-55

-60

-65

-70

-75

-80 20 20k50 100 200 500 1k 2k 5k 10k

+0

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

-110

-120

-130 20 20k50 100 200 500 1k 2k 5k 10k

W

Hz

October 2013