Description
The PAM8303D is a 3W mono filterless Class-D amplifier with high
PSRR and differential input that eliminate noise and RF rectification.
Features like 90% efficiency and small PCB area make the
PAM8303D Class-D amplifier ideal for cellular handsets. The filterless
architecture requires no external output filter, fewer external
components, less PCB area and lower system costs, and simplifies
application design.
The PAM8303D features short circuit protection and thermal
shutdown.
The PAM8303D is available in MSOP-8 and DFN3x3 8-pin packages.
MONO CLASS-D AUDIO POWER AMPLIFIER
Pin Assignments
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PAM8303D
ULTRA LOW EMI, 3W FILTERLESS
Features
• Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz
• High Efficiency up to 90% @1W with an 8Ω Speaker
• Shutdown Current <1µA
• 3W@10% THD Output with a 4Ω Load at 5V Supply
• Demanding Few External Components
• Superior Low Noise without Input
• Supply Voltage from 2.8V to 5.5V
• Short Circuit Protection
• Thermal Shutdown
• Available in Space Saving Packages: MSOP-8, DFN3x3-8
• Pb-Free Package
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
www.diodes.com
Applications
• Cellular Phones/Smart Phones
• MP4/MP3
• GPS
• Digital Photo Frame
• Electronic Dictionary
• Portable Game Machines
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Typical Applications Circuit
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PAM8303D
Pin Descriptions
Pin
Name
OUT+ 1 Positive BTL Output
PVDD 2 Power Supply
VDD 3 Analog Power Supply
IN- 4 Negative Differential Input
IN+ 5 Positive Differential Input
SD 6 Shutdown Terminal (active low)
GND 7 Ground
OUT- 8 Negative BTL Output
Pin
Number
Function
Functional Block Diagram
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
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PAM8303D
Absolute Maximum Ratings (@T
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter Rating Unit
Supply Voltage 6.0
Input Voltage
Maximum Junction Temperature 150
Storage Temperature -65 to +150
Soldering Temperature 250, 10 sec
Recommended Operating Conditions (@T
Parameter Rating Unit
Supply Voltage Range 2.8 to 5.5 V
Ambient Temperature Range -40 to +85 °C
Junction Temperature Range -40 to +125 °C
= +25°C, unless otherwise specified.)
A
-0.3 to V
DD
+0.3
= +25°C, unless otherwise specified.)
A
V
°C
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case) MSOP-8
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
MSOP-8
DFN3x3-8 47.9
www.diodes.com
θ
JA
θ
JC
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180
75
°C/W
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PAM8303D
Electrical Characteristics (@T
Symbol Parameter Test Conditions Min Typ Max Units
VDD
PO
THD+N
PSRR Power Supply Ripple Rejection
Dyn Dynamic Range
VN
CMRR Common Mode Rejection Ratio
ISD
R
DS(ON)
RIN
fSW
GV
VOS
VIH
VIL
Supply Voltage
Output Power
Total Harmonic Distortion Plus
Noise
Output Noise Inputs AC-Grounded
η Peak Efficiency
Quiescent Current
IQ
Shutdown Current
Static Drain-to-Source
On-State Resistor
Input Resistance
Switching Frequency
Closed Loop Gain
Output Offset Voltage
Enable Input High Voltage
Enable Input Low Voltage
= +25°C, VDD = 5V, Gain = 2V/V, RL = L(33µH) + R + L(33µH), unless otherwise specified.)
A
THD+N = 10%, f = 1KHz, R = 4Ω
THD+N = 1%, f = 1KHz, R = 4Ω
THD+N = 10%, f = 1KHz, R = 8Ω
THD+N = 1%, f = 1KHz, R = 8Ω
= 5.0V, PO = 1W, R = 8Ω
V
DD
VDD = 3.6V, PO = 0.1W, R = 8Ω
VDD = 3.2V, PO = 0.1W, R = 8Ω
VDD = 5.0V, PO = 0.5W, R = 4Ω
VDD = 3.6V, PO = 0.2W, R = 4Ω
VDD = 3.2V, PO = 0.1W, R = 4Ω
V
= 3.6V, Inputs AC-Grounded
DD
with C
= 1µF
IN
V
= 5V, THD = 1%, R = 8Ω
DD
= 5.0V
V
DD
VDD = 3.6V
VDD = 3.2V
V
= 5.0V
DD
VDD = 3.6V
VDD = 3.2V
= 5.0V
V
DD
VDD = 3.6V
VDD = 3.2V
= 5.0V
V
DD
VDD = 3.6V
VDD = 3.2V
f = 1kHz
f = 1kHz
f = 217Hz -63 -55
f = 1kHz -62 -55
f = 10kHz -52 -40
f = 1kHz 85 95
2.8 5.5 V
2.85 3.00
1.65 1.80
1.20 1.35
2.50 2.66
1.15 1.30
0.85 1.0
1.65 1.80
0.75 0.90
0.55 0.70
1.3 1.5
0.55 0.72
0.40 0.55
0.28 0.35
0.40 0.45
0.55 0.60
0.20 0.25
0.35 0.40
0.5 0.55
No A-Weighting 50 100
A-Weighting 30 60
V
= 100m, VPP, f =1kHz
IC
R
= 8Ω, THD = 10%
L
RL = 4Ω, THD = 10%
= 5.0V
V
DD
VDD = 3.6V
f = 1kHz
R = 8Ω
VDD = 3.0V
VDD = 3.0V to 5.0V VSD = 0.3V
= 5.0V
V
CSP Package, High Side PMOS
plus Low Side NMOS,
I = 500mA
MSOP/DFN package,
High Side PMOS plus
Low Side NMOS, I = 500mA
DD
VDD = 3.6V
VDD = 3.0V
= 5.0V
V
DD
VDD = 3.6V
VDD = 3.0V
VDD = 3V to 5V
VDD = 3V to 5V
Input AC-Ground, VDD = 5V
VDD = 5V
VDD = 5V
40 63 dB
85 90
80 86 %
7.5 10
4.6 7.0
3.6 5.0 mA
0.5 2.0 µA
280 350
300 375
325 400
365 420
385 450
410 500
150 KΩ
200 250 300 KHz
300kΩ/R
dB
I
10 50 mV
1.5 V
0.3 V
W
W
W
W
%
%
dB
µV
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
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Typical Performance Characteristics (@T
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PAM8303D
= +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
A
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
5 of 16
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November 2012
© Diodes Incorporated