Diodes PAM8302A User Manual

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Description

The PAM8302A is a 2.5W Class-D mono audio amplifier. Its low

THD+N feature offers high quality sound reproduction. The new

filterless architecture allows the device to drive speakers directly

instead of using low-pass output filters, therefore saving system cost

and PCB area.

With the same number of external components, the efficiency of the

PAM8302A is much better than that of Class-AB cousins. It can

optimize battery life thus is ideal for portable applications.

The PAM8302A is available in MSOP-8, SOP-8, DFN3x3-8 and

DFN2x2-8 packages.

Features

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PAM8302A

2.5W FILTERLESS CLASS-D MONO AUDIO AMPLIFIER

Pin Assignments

 2.5W Output at 10% THD with a 4 Load and 5V Power Supply

 Filterless, Low Quiescent Current and Low EMI

 High Efficiency up to 88%

 Superior Low Noise

 Short Circuit Protection

 Thermal Shutdown,

 Few External Components to Save Space and Cost

 MSOP-8, SOP-8, DFN3x3-8 and DFN2x2-8 Packages Available

 Pb-Free Packages

Applications

 PMP/MP4

 GPS

 Portable Speakers

 Walkie Talkie

 Handsfree phones/Speaker Phones

 Cellular Phones

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Typical Applications Circuit

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PAM8302A

Functional Block Diagram

Absolute Maximum Ratings (@T

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

Parameter Rating Unit

Supply Voltage at No Input Signal 6.0

Input Voltage

Maximum Junction Temperature 150

Storage Temperature -65 to +150

Soldering Temperature 300, 5sec

PAM8302A

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= +25°C, unless otherwise specified.)

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-0.3 to V

+0.3

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PAM8302A

Recommended Operating Conditions (@T

= +25°C, unless otherwise specified.)

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Parameter Rating Unit

Suppy Voltage Range 2.0 to 5.5 V

Operation Temperature Range -40 to +85 °C

Junction Temperature Range -40 to +125 °C

Thermal Information

Parameter Package Symbol Max Unit

SOP-8

Thermal Resistance (Junction to Ambient)

MSOP-8 180

DFN3x3-8 4739



JA

DFN2x2-8 80

Electrical Characteristics (@T

= +25°C, VIN = 3.6V, VO = 1.8V, CIN = 10µF, C

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Parameter Symbol Test Conditions Min Typ Max Units

Supply Voltage Range

Quiescent Current

Shutdown Current

V

I

SHDN

DD

Q

2.0 5.5 V

No Load 4 8 mA

V

= 0V

SHDN

f = 1kHz, R

= 4,

L

THD+N = 10%

f = 1kHz, RL = 4,

Output Power

P

O

THD+N = 1%

f = 1kHz, RL = 8, THD+N = 10%

f = 1kHz, RL = 8, THD+N = 1%

Peak Efficiency  f = 1kHz 85 88 %

= 8, PO = 0.1W, f = 1kHz

R

L

Total Harmonic Distortion Plus Noise THD+N

RL = 8, PO = 0.5W, f = 1kHz

RL = 4, PO = 0.1W, f = 1kHz

RL = 4, PO = 0.5W, f = 1kHz

Gain

G

V

Power Supply Ripple Rejection PSRR

No Inputs, f = 1kHz, V

Dynamic Range DYN f = 20 to 20kHz 85 90 dB

Signal to Noise Ratio SNR f = 20 to 20kHz 75 80 dB

Noise

Oscillator Frequency

Drain-Source On-State Resistance

SHDN Input High

SHDN Input Low

f

R

DS(ON)

V

OSC

SH

SL

N

No A-Weighting 180 300

A-Weighting 120 200

IDS = 100mA

Over Temperature Protection OTP Junction Temperautre 120 135 °C

Over Temperature Hysterisis OTH 30 °C

115

°C/W

= 10µF, L = 4.7µH, unless otherwise specified.)

OUT

1 µA

= 5V

V

DD

VDD = 3.6V

= 5V

V

DD

VDD = 3.6V

V

= 5V

DD

VDD = 3.6V

V

= 5V

DD

VDD = 3.6V

2.25 2.50

1.10 1.25

1.80 2.00

0.86 0.95

1.35 1.50

0.72 0.80

1.15 1.30

0.6 0.65

0.30 0.35

0.45 0.50

0.35 0.40

0.40 0.45

22.5 24.0 25.5 dB

= 200mV

PP

45 50 dB

200 250 300 kHz

P MOSFET 0.45 0.50

N MOSFET 0.20 0.25

1.2

0.4

W

%

µV



V

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Typical Performance Characteristics (@T

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= +25°C, unless otherwise specified.)

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Typical Performance Characteristics (cont.) (@T

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= +25°C, unless otherwise specified.)

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