Diodes PAM8015 User Manual
V
Description
A PRODUCT LINE OF
DIODES INCORPORATED
PAM8013/PAM8015
3W MONO CLASS D AUDIO AMPLIFIER
Pin Assignments
The PAM8013/PAM8015 is a 3W mono filter-less class-D amplifier
with high PSRR and differential input that eliminate noise and RF
rectification.
Features like greater than 90% efficiency and small PCB area make
the PAM8013/PAM8015 Class-D amplifier ideal for portable
applications. The output uses a filter-less architecture minimizing the
number of external components and PCB area whilst providing a high
performance, simple and lower cost system.
The PAM8013/PAM8015 features short circuit protection and thermal
shutdown.
The PAM8013/PAM8015 is available in U-FLGA1515-9 packages.
NEW PRODUCT
Features
Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz
High Efficiency up to 90% @1W with an 8Ω Speaker
Shutdown Current <1μA
3W@10% THD Output with a 4Ω Load at 5V Supply
Demanding Few External Components
Superior Low Noise without Input
Supply Voltage from 2.8V to 5.5 V
Short Circuit Protection
Thermal Shutdown
Available in Space Saving U-FLGA1515-9 Packages
Pb-Free Package
U-FLGA1515-9
GND
IN+
A1 A2
VDD
PVDD PGND
B1 B2 B3
IN-
C1 C2 C3
SD
PAM8013
PVDD
IN+
A1 A2
GND GND PGND
B1 B2 B3
IN- SD OUT+
C1 C2 C3
PAM8015
Applications
Cellular Phones/Smart Phones
MP4/MP3
GPS
Digital Photo Frame
Electronic Dictionary
Portable Game Machines
OUT-
A3
OUT +
OUT-
A3
Typical Applications Circuit
DD
1Fμ
VDD(PAM8013)
PVDD
SD
0.1 Fμ
0.1 Fμ
IN+
IN-
SD
PGND
1 of 9
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GND
OUT+
OUT-
May 2014
© Diodes Incorporated
VIN
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
Pin Descriptions
Pin Name PAM8013 PAM8015 Function
IN+ A1 A1 Positive differential input
GND A2 B1/B2 Ground
OUT- A3 A3 Negative BTL output
VDD B1 — Power supply
PVDD B2 A2 Power supply
PGND B3 B3 Power Ground
IN- C1 C1 Negative differential input
SD C2 C2 SD terminal to disable the chip
OUT+ C3 C3 Positive BTL output
Functional Block Diagram
NEW PRODUCT
IN+
IN-
A PRODUCT LINE OF
DIODES INCORPORATED
PAM8013/PAM8015
VDD
(PAM8013)
Gate
-
+
PWM
Modulator
Drive
Gate
Drive
PVDD
OUT +
OUT-
SD
SD
Bias and
Vref
OSC
UVLO
Startup
Protection
SC
Protect
OTP
GND
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (VDD) 6.0 V
Input Voltage(IN+, IN-, SD)
Storage Temperature -65 to +150 °C
Maximum Junction Temperature 150 °C
Recommended Operating Conditions (@T
Symbol Parameter Min Max Unit
VDD Supply Voltage 2.8 5.5 V
TA Operating Ambient Temperature Range -25 85 °C
TJ Junction Temperature -40 +125 °C
(@TA = +25°C, unless otherwise specified.)
-0.3 to V
= +25°C, unless otherwise specified.)
A
DD
+0.3
V
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
2 of 9
www.diodes.com
May 2014
© Diodes Incorporated
A PRODUCT LINE OF
DIODES INCORPORATED
Electrical Characteristics (@TA=25°C, VDD=5V, Gain=18dB, RL=L(33μH)+R+L(33μH), unless otherwise noted.)
Symbol Parameter Test Conditions Min Typ Max Unit
VDD Supply Voltage — 2.8 — 5.5 V
— 3.0 —
— 1.5 —
— 1.2 —
— 2.4 —
— 1.25 —
— 1.0 —
— 1.75 —
— 0.90 —
— 0.70 —
— 1.40 —
— 0.72 —
— 0.60 —
— 0.17 —
— 0.16 —
— 0.14 —
— 0.14 —
— 0.16 —
— 0.17 —
— -68 —
— 95 — dB
— 170 —
— 93 —
— 5 — mA
— —1 μA
— 325 — mΩ
— 200 — mΩ
— 400 kHz
—
28.5 KΩ
— — 20 mV
1.4 — —
— — 1.0
NEW PRODUCT
THD+N = 10%, f = 1kHz, R = 4Ω
THD+N = 1%, f = 1kHz, R = 4Ω
Po Output Power
THD+N = 10%, f = 1kHz, R = 8Ω
THD+N = 1%, f = 1kHz, R = 8Ω
= 5.0V, PO = 1W, R = 8Ω
V
DD
VDD = 3.6V, PO = 0.1W, R = 8Ω
THD+N
Total Harmonic
Distortion Plus
Noise
VDD = 3.2V, PO = 0.1W, R = 8Ω
VDD = 5.0V, PO = 0.5W, R = 4Ω
VDD = 3.6V, PO = 0.2W, R = 4Ω
VDD = 3.2V, PO = 0.1W, R = 4Ω
PSRR
Power Supply Ripple
Rejection
Dyn Dynamic Range
= 3.6V, Inputs ac-grounded
V
DD
with C = 1μF
V
= 5V,THD = 1%, R = 8Ω
DD
Vn Output Noise Inputs AC-grounded
η Efficiency
IQ Quiescent Current
Isd Shutdown Current
Rdson
Static Drain-to Source
On-state Resistor
fsw Switching Frequency
Gv Closed-loop Gain
RIN Input Impedance
Vos Output Offset Voltage
VIH SD Input High Voltage
VIL SD Input Low Voltage
RL= 8Ω, THD = 10%
RL= 4Ω, THD = 10% — 86 —
V
= 5V
DD
V
= 2.8V to 5V SD = 0V
DD
High Side PMOS, I = 500mA
Low Side NMOS, I = 500mA
V
= 2.8V to 5V
DD
V
= 2.8V to 5V
DD
V
= 2.8V to 5V
DD
Input AC-ground, V
V
= 5V
DD
V
= 5V
DD
DD
= 5V
V
= 5.0V
DD
V
= 3.6V
DD
V
= 3.2V
DD
V
= 5.0V
DD
V
= 3.6V
DD
V
= 3.2V
DD
V
= 5.0V
DD
V
= 3.6V
DD
V
= 3.2V
DD
V
= 5.0V
DD
V
= 3.6V
DD
V
= 3.2V
DD
f = 1kHz
f = 1kHz
f = 217Hz
f = 1kHz — -70 —
f = 10kHz — -67 —
f = 1kHz
No A weighting
A-weighting — 130 —
f = 1kHz
No Load
= 5.0V
V
DD
V
= 5.0V
DD
—
—
—
—
—
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
3 of 9
www.diodes.com
PAM8013/PAM8015
W
W
W
W
%
%
dB
μV
%
300K/RIN
— V/V
V
May 2014
© Diodes Incorporated
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