Diodes PAM8012 User Manual

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Description

The PAM8012 is a 2.0W mono filterless class-D amplifier with high

PSRR and differential input that reduce noise.

Features like 90% efficiency and small PCB area make the PAM8012

Class-D amplifier ideal for cellular handsets. The filterless architecture

requires no external output filter, fewer external components, less

PCB area and lower system costs, and simplifies application design.

The PAM8012 features anti-saturation function which detect output

signal clip due to the over input level and keep the output non-

saturation automatically to get the excellent sound quality.

The maximum output power without clip can be set by one resistor at

PL pin that to prevent the speaker to be damaged.

The PAM8012 features short circuit protection and over temperature

protection.

The PAM8012 is available in tiny WCSP9 (1.3mm x 1.3mm) and

eMSOP10 packages.

Features

MONO 2.0W ANTI-SATURATION CLASS-D

AUDIO POWER AMPLIFIER with POWER LIMIT

Pin Assignments

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PAM8012

• 1.0W/2.0W @ <1% THD Output with a 8Ω/ 4Ω Load at 5V

Supply

• Maximum Output Power Can Be Set by One External Resistor

• Minimized ON/OFF Pop Noise

• Superior Low Noise

• High PSRR

• Supply Voltage from 2.5V to 5.5V

• Auto Recovering Short Circuit Protection

• Over Temperature Protection

• 9 Ball, 1.3mm x 1.3mm, 0.4mm Pitch WCSP and eMSOP10

Packages

Applications

• Wireless or Cellular Handsets and PDAs

• Portable Navigation Devices

• General Portable Audio Devices

PAM8012

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Typical Applications Circuit

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PAM8012

Functional Block Diagram

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PAM8012

Absolute Maximum Ratings (@T

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

Parameter Rating Unit

Supply Voltage, VDD

Input Voltage, IN+, IN-

Minimum Load Resistance 3.2 Ω

Maximum Junction Temperature -65 to +150

Storage Temperature 150

Soldering Temperature 260, 10sec

Recommended Operating Conditions (@T

Parameter Rating Unit

Supply Voltage Range 2.5 to 5.5 V

Ambient Temperature Range -40 to +85

Junction Temperature Range -40 to +125

= +25°C, unless otherwise specified.)

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-0.3 to V

6.0

DD

+0.3

= +25°C, unless otherwise specified.)

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°C

Thermal Information

Parameter Package Symbol Max Unit

Thermal Resistance (Junction to Ambient)

Thermal Resistance (Junction to Case)

PAM8012

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WCSP9 1.3 x 1.3

eMSOP10 60

WCSP9 1.3 x 1.3

eMSOP10 30

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JC

100

40

°C/W

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PAM8012

Electrical Characteristics (@T

Symbol Parameter Test Conditions Min Typ Max Units

VDD

PO

THD+N Total Harmonic Distortion Plus Noise

PSRR AC Power Supply Ripple Rejection

SNR Signal to Noise Ratio THD = 1%, f = 1KHz

VN

ISD

|VOS|

RIN

GV

fSW

TON

OTP Over Temperature Protection

OTH Over Temperature Hysterisis

V

AR Maximum Attenuation Range Anti-Saturation Active from +18dB to -18dB 26 dB

PAM8012

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Supply Voltage

Output Power

Output Noise

η Peak Efficiency

Quiescent Current

IQ

Shutdown Current

Offdet Voltage

Input Resistor

Closed Loop Gain

Switching Frequency

Turn-On Time

High-Level EN Voltage

ENH

Low-Level EN Voltage

ENL

= +25°C, VDD = 5V, unless otherwise specified.)

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= 110KΩ, f = 3kHz, R = 4Ω VDD = 5V

R

PL

RPL = 110KΩ, f = 3kHz, R = 8Ω VDD = 5V

= 5V, PO = 1W, R = 4Ω

V

DD

VDD = 3.6V, PO = 2W, R = 4Ω

VDD = 5V, PO = 1W, R = 8Ω

VDD = 5V, PO = 0.5W, R = 8Ω

f = 217Hz, Inputs AC-Grounded

= 0.1µF

with C

IN

CIN = 0.1µF, Inputs AC-Grounded

R

= 8Ω

L

RL = 4Ω

VEN = 5.0V, VDD = 5V, PL = 0V

VDD = 2.5V to 5.5V, VEN = 0V

VDD = 5V

V

= 5V

DD

V

= 5V

DD

VDD = 5V

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f = 1kHz

V

= 5.0V

DD

VDD = 3.6V

= 5.0V

V

DD

VDD = 3.6V

No A-Weighting 60

A-Weighting 40 µV

f = 1kHz 90

87 %

No Load 4.2 mA

No Load 1 µA

No Load 150 °C

No Load 40 °C

2.5 5.5 V

2.0 W

1.0

0.08

0.08 %

0.08

0.08 %

-75

95 dB

95

-20 +20 mV

31 KΩ

18 dB

250 KHz

45 mS

1.4 V

0.4 V

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Typical Performance Characteristics (@T

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= +25°C, VDD = 5V, unless otherwise specified.)

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PAM8012

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