Diodes PAM8007 User Manual

Description
The PAM8007 is a 3W, Class-D audio amplifier with headphone
amplifier. Advanced 64-Step DC volume control minimizes external
components and allows speaker volume control and headphone
volume control. It offers low THD+N, to produce high-quality sound
reproduction. The new filterless architecture allows the device to drive
the speaker directly, without low-pass output filters which will save
30% system cost and 75% PCB area.
With the same numbers of external components, the efficiency of the
PAM8007 is much better than class-AB cousins. It can extend the
battery life thus be ideal for portable applications.
The PAM8007 is available in a SSOP-24 and SOP-24 package.
Features
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PAM8007
FILTERLESS 3W CLASS-D STEREO AUDIO AMPLIFIER
with DC VOLUME CONTROL and HEADPHONE OUTPUT
Pin Assignments
3W Output at 10% THD with a 4 Load and 5V Power Supply
Filterless, Low Quiescent Current and Low EMI
Low THD+N
64-Step DC Volume Control
Headphone Output Function
Superior Low Noise
Low Pop Noise
Efficiency Up to 92%
Short Circuit Protection
Thermal Shutdown
Few External Components to Save the Space and Cost
Pb-Free Package
Applications
LCD Monitors / TV Projectors
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
VoIP/Speaker Phones
PAM8007
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Typical Applications Circuit
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PAM8007
Pin Descriptions
Pin
Number
1 -OUT_L Left Channel Negative Output
2 PGNDL Left Channel Power GND
3 PGNDL Left Channel Power GND
4 +OUT_L Left Channel Positive Output
5 PVDDL Left Channel Power Supply
6 MUTE Mute Control Input (active low)
7 VDD Analog VDD
8 INL Left Channel Input
9 EAR INL Left Earphone Input
10 VDC Analog Reference for Gain Control Section
11 VOLUME DC Volume Control to Set the Gain of Class-D
12 EAR OUT L Left Earphone Output(Non-Inverting)
13 EAR OUT R Right Earphone Output(Non-Inverting)
14 VREF Internal Analog Reference, connect a bypass capacitor from VREF to GND
15 LINE/EAR Line / Earphone Switch. Speaker Output (active low), Earphone Output (active high)
16 EAR LN R Right Earphone Input
17 INR Right Channel Input
18 GND Analog GND
19 SHDN Shutdown Control Input (active low)
20 PVDDR Right Channel Power Supply
21 +OUT_R Right Channel Positive Output
22 PGNDR Right Channel Power GND
23 PGNDR Right Channel Power GND
24 -OUT_R Right Channel Negative Output
PAM8007
Document number: DSxxxxx Rev. 1 - 2
Pin
Name
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Function
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Functional Block Diagram
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PAM8007
Absolute Maximum Ratings (@T
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.
Parameter Rating Unit
Supply Voltage 6.0
Input Voltage
Maximum Junction Temperature 150
Storage Temperature -65 to +150
Soldering Temperature 300, 5sec
Recommended Operating Conditions (@T
Parameter Rating Unit
Supply Voltage Range 2.5 to 5.5 V
Ambient Operation Temperature Range -20 to +85 °C
Junction Temperature Range -20 to +125 °C
PAM8007
Document number: DSxxxxx Rev. 1 - 2
= +25°C, unless otherwise specified.)
A
-0.3 to V
+0.3
DD
= +25°C, unless otherwise specified.)
A
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V
°C
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October 2012
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PAM8007
Thermal Information
Parameter Package Symbol Max Unit
= 8
= 200mV
PP
= 200mV
PP
90
32
°C/W
2.5 5.5 V
12 16 mA
1.55 1.75
2.85 3.1
0.12
0.15
W
%
63 dB
-88 dB
85 92 %
80 88 %
µV
69 mW
0.04 %
73 dB
95 dB
µV
8 12 mA
20 µA
V
V
V
October 2012
© Diodes Incorporated
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
SSOP-24
SOP-24 79.2
SSOP-24
SOP-24 27
θ
JA
θ
JC
Electrical Characteristics (@T
= +25°C, VDD = 5V, Gain = 24dB, RL = 8, unless otherwise specified.)
A
Parameter Symbol Test Conditions Min Typ Max Units
Class D Stage
Supply Voltage Range
Quiescent Current
Output Offset Voltage
Drain-Source On-State Resistance
Output Power
Total Harmonic Distortion Plus Noise
V
I
V
R
DS(ON)
P
THD+N
Power Supply Ripple Rejection PSRR
Channel Separation CS
Oscillator Frequency
f
OSC
Efficiency η
Noise
V
DD
No Load
Q
No Load 10 50 mV
OS
IDS = 0.5A
THD+N = 10%
O
f = 1kHz
R
R
= 8Ω, PO = 1W, f = 1KHz
L
= 4Ω, PO = 2W, f = 1KHz
L
P MOSFET 0.23
N MOSFET 0.17
R
L
RL = 4
Input AC-GND, f = 1KHz, V
V
= 1V
O
200 250 300 kHz
P
= 1.75W, f =1 kHz, RL = 8
O
, f = 1KHz
RMS
PO = 3.0W, f =1 kHz, RL = 4
N
Input AC-GND Gain = 12dB
A-Weighting 65
No A-Weighting 90
Signal Noise Ratio SNR f = 20 – 20kHz, THD = 1% 84 dB
Earphone Stage
Output Power
Total Harmonic Distortion Plus Noise THD+N
Power Supply Ripple Rejection PSRR
Channel Separation CS
Noise
P
THD+N = 1%, RL = 32, f = 1kHz
O
R
= 32Ω, PO = 10mW, f = 1kHz
L
Input AC-GND, f = 1kHz, V
V
= 1V
O
V
Input
N
AC-GND
, f = 1kHz
RMS
A-Weighting 19
No A-Weighting 25
Signal Noise Ratio SNR f = 20 – 20kHz, THD = 1% 97 dB
Control Section
Mute Current
Shutdown Current
SHDN Input High
SHDN Input Low
MUTE Input High
MUTE Input Low
Line/Ear Input High
Line/Ear Input Low
I
MUTE
I
SHDN
V
V
V
V
V
V
SH
SL
MH
ML
DH
DL
V
V
= 0V
MUTE
= 0V
SHDN
1.5
0.4
1.5
0.4
2.5
0.4
Over Temperature Protection OTP 150 °C
Over Temperature Hysteresis OTH 30 °C
PAM8007
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Typical Performance Characteristics (@T
Speaker
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= +25°C, unless otherwise specified.)
A
Product Line o
PAM8007
PAM8007
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October 2012
Typical Performance Characteristics (cont.) (@T
Speaker
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= +25°C, unless otherwise specified.)
A
PAM8007
PAM8007
Document number: DSxxxxx Rev. 1 - 2
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