Diodes PAM3101 User Manual

Page 1
300mA HIGH PSRR LOW-DROPOUT CMOS LINEAR REGULATOR
Description
The PAM3101 series of positive voltage linear regulators feature low quiescent current (65µA typ.) and low dropout voltage, making them ideal for battery powered applications. Their high PSRR make them useful in applications where AC noise on the input power supply must be suppressed. Space-saving TSOT25, SOT-23, SOT-89, SC70 and DFN1.6x1.6-6L packages are attractive for portable and handheld applications. They have both thermal shutdown and current limit features to prevernt device failure from extreme operating conditions. They are stable with an output capacitor of 2.2µF or greater.
Features
Low Dropout Voltage: 180mV@300mA (VO = 3.3V)  Output Voltage Accuracy within ±2%  Supply Voltage Range: 2.5V to 5.5V  Quiescent Current: 65µA typ.  High PSRR: 70dB@1kHz  Excellent Line and Regulation  Fast Discharge  Current Limiting  Short Circuit Protection  Low Temperature Coefficient  Shutdown Current: 0.5µA  Thermal Shutdown  Space Saving Packages: TSOT25, SOT-23, SOT-89, SC70 and
DFN1.6x1.6
Pb-Free Packages
Applications
Pin Assignments
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PAM3101
Top View
TSOT25
Cellular Phones Bluetooth Earphones Digital Cameras Portable Electronics WLANs MP3 Players
PAM3101
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Typical Applications Circuit
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PAM3101
Pin Configuration and Description
Package
Type
SOT23-3
TSOT25
SOT89-3 SOT89-5
SC-70-3L
SC70-4L SC70-5L
DFN1.6x1.6-6L
Pin Name Function
VIN Input
GND Ground
VOUT Output
EN
BYP Bypass Pin, need a 10nF capacitor connect to GND
NC No Connection
1 2 3 4 5 6
GND
VIN
VOUT
VIN VIN
GND VOUT VOUT
VIN
EN
VIN
EN
Chip Enable (active high) PAM3101BABXXX----EN default floating Other part no----EN default pull high
VOUT VIN — — — VOUT GND — — —
GND VIN — — — GND EN BYP VOUT GND EN NC VOUT —
VIN VOUT — — — GND VIN — — — GND NC EN VIN —
VOUT GND — — —
GND VOUT VIN — — GND EN BYP VOUT —
NC VIN VOUT NC GND
Pin Number
PAM3101
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Functional Block Diagram
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PAM3101
Absolute Maximum Ratings (@T
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.
Parameter Rating Unit
Input Voltage 6.0 V Output Current 300 mA Output Pin Voltage Lead Soldering Temperature 300, (5sec) °C Storage Temperature -65 to +150 °C ESD Rating Class B
= +25°C, unless otherwise specified.)
A
GND -0.3 to V
+0.3V
IN
Recommended Operating Conditions (@T
Parameter Rating Unit
Supply Voltage Range 2.5 to 5.5 V Junction Temperature -40 to +125
Operation Temperature -40 to +85
PAM3101
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V
= +25°C, unless otherwise specified.)
A
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°C
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Thermal Information
Parameter Symbol Package Max Unit
TSOT25/SOT23 130
Thermal Resistance Junction to Case)
Thermal Resistance (Junction to Ambient)
θ
JC
θ
JA
Internal Power Dissipation (@TA = 25°C) PD
Electrical Characteristics (@T
= +25°C, V
A
CE1
= V
Parameter Symbol Test Conditions Min Typ Max Units
Input Voltage Output Voltage
V V
Output Current
Dropout Voltage
Ground Current
V
I
DROP
GND
Quiescent Current
Line Regulation LNR
IN
IO = 1mA
O
300 Note 2 mA
I
O
IO = 300mA
IO = 1mA to 300mA
I
IO = 0mA
Q
I
= 1mA, VO < 2V, VIN = 2.8V to 3.8V
O
IO = 1mA, 2V VO < 3.3V, VIN = VO +0.5V to VO +1V IO = 1mA, VO 3.3V, VIN = VO +0.5V to VO +1V I
= 1mA to 300mA, VO 2V
Load Regulation LDR Temperature Coefficient
T Over Temperature Shutdown OTS Over Temperature Hysteresis OTH
Power Supply Ripple Rejection PSRR
Output Noise CE Input High Threshold CE Input Low Threshold
Shutdown Current
Notes: 1. The minimym inout voltage (V V
2. Output current is limited by P
IN(MIN)
= VO +V
DROP
V
V V
I
SD
IN(MIN
, maximum IO = PD/(V
D
O
IO = 1mA to 300mA, VO < 2V
IO = 1mA
C
I
= 1mA
O
I
= 1mA
O
= 100mA
I
O
C
= 10nF
BYP
= 3.3V
V
O
f = 10Hz to 100kHz, C
N
VIN = 2.5V to 5V
TH
VIN = 2.5V to 5V
TL
VEN = 0V
) of the PAM3101 is determined by output voltage and dropout voltage. The minimum input voltage is defined as:
IN(MAX)
PAM3101
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SOT-89 100
SC70 160
DFN1.6x1.6 65
TSOT25/SOT23 250
°C/W
SOT-89 180
SC70 300
DFN1.6x1.6 175
TSOT25/SOT23 400
SOT-89 550
SC70 300
mW
DFN1.6x1.6 570
= VIN = VO +1V, CIN = 2.2µF, CO = 2.2µF, unless otherwise specified.)
CE2
Note 1 5.5 V
-2 +2 %
= 1.5V
V
O
VO = 1.8V
2.5V VO < 3.3V VO 3.3V
1150 1400 850 1100 370 450 180 230 70 90 µA 65 90 µA
-0.15 0.10 0.15
-0.10 0.03 0.10
-0.4 0.2 0.4
-2 1 +2 % 30 60 mV 40 ppm/°C 150 °C 30 °C
f = 100Hz 70 f = 1kHz 65
BYP
= 10nF
50
1.5 V
0.3 V
0.01 1 µA
– VO).
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mV
%/V
dB
µV
RMS
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Typical Performance Characteristics
(@TA = +25°C, VEN = VIN, CIN = 1µF, CO = 2.2µF, C
= 10nF unless otherwise specified.)
BYP
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PAM3101
PAM3101
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Typical Performance Characteristics (cont.)
(@TA = +25°C, VEN = VIN, CIN = 1µF, CO = 2.2µF, C
= 10nF unless otherwise specified.)
BYP
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PAM3101
PAM3101
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Typical Performance Characteristics (cont.)
(@TA = +25°C, VEN = VIN, CIN = 1µF, CO = 2.2µF, C
= 10nF unless otherwise specified.)
BYP
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PAM3101
PAM3101
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Typical Performance Characteristics (cont.)
(@TA = +25°C, VEN = VIN, CIN = 1µF, CO = 2.2µF, C
= 10nF unless otherwise specified.)
BYP
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PAM3101
PAM3101
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Typical Performance Characteristics (cont.)
(@TA = +25°C, VEN = VIN, CIN = 1µF, CO = 2.2µF, C
= 10nF unless otherwise specified.)
BYP
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PAM3101
PAM3101
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Typical Performance Characteristics (cont.)
(@TA = +25°C, VEN = VIN, CIN = 1µF, CO = 2.2µF, C
= 10nF unless otherwise specified.)
BYP
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PAM3101
PAM3101
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Application Information
Capacitor Selection and Regulator Stability
Similar to any low dropout regulator, the external capacitors used with the PAM3101 must be carefully selected for regulator stability and performance.
A capacitor C distance between C Capacitors with larger values and lower ESR (equivalent series resistance) provide better PSRR and line-transient response.
The PAM3101 is designed specifically to work with low ESR ceramic output capacitors in order to save space and improve performance. Using an output ceramic capacitor whose value is >2.2μF with ESR>5mΩ ensures stability.
A 10nF bypass capacitor connected to BYP pin is suggested for suppressing output noise. The capacitor, in series connection with an internal 200k resistor, forms a low-pass filter for noise reduction. Increasing the capacitance will slightly decrease the output noise, but increase the start-up time.
Load Transient Consideration
Curve 10 of the PAM3101 load-transient response on page 10 shows two components of the output response: a DC shift from the output impedance due to the load current change and transient response. The DC shift is quite small due to excellent load regulation of the PAM3101. The transient spike, resulting from a step change in the load current from 1mA to 300mA, is 20mV. The ESR of the output capacitor is critical to the transient spike. A larger capacitance with smaller ESR results in a smaller spike.
Shutdown Input Operation
The PAM3101 is shut down by pulling the EN input low, and is turned on by tying the EN input to VIN.
Internal P-Channel Pass Transistor
The PAM3101 features a 0.75 P-Channel MOSFET device as a pass transistor. The PMOS pass transistor enables the PAM3101 to consume only 65μA of ground current during low dropout, light-load, or heavy-load operations. This feature increases the battery operation life time.
Input-Output (Dropout) Voltage
A regulator's minimum input-output voltage difference (or dropout voltage) determines the lowest usable supply voltage. The PAM3101 has a typical 300mV dropout voltage. In battery powered systems, this will determine the useful end-of-life battery voltage.
Current Limit and Short Circuit Protection
The PAM3101 features a current limit, which monitors and controls the gate voltage of the pass transistor. The output current can be limited to 400mA by regulating the gate voltage. The PAM3101 also has a built-in short circuit current limit.
Thermal Considerations
Thermal protection limits power dissipation in the PAM3101. When the junction temperature exceeds +150°C, the OTP (Over Temperature Protection) starts the thermal shutdown and turns the pass transistor off. The pass transistor resumes operation after the junction temperature drops below +120°C.
For continuous operation, the junction temperature should be maintained below +125°C. The power dissipation is defined as:
of more than 1μF can be employed in the input pin, while there is no upper limit for the capacitance of CIN. Please note that the
IN
and the input pin of the PAM3101 should not exceed 0.5 inch. Ceramic capacitors are suitable for the PAM3101.
IN

VVP
*
VI
*
I
GNDINOOUTIND
The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surrounding airflow and temperature difference between junction and ambient. The maximum power dissipation can be calculated by the following formula:
Where T junction to the ambient.
is the maximum allowable junction temperature +125°C , TA is the ambient temperature and θJA is the thermal resistance from the
J(MAX)
PAM3101
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/
TTP
A)MAX(J)MAX(D
JA
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Application Information
For example, as θ layer thermal test board, the maximum power dissipation at T
P
P
is 250°C/W for the SOT-23 package and 180°C/W for the SOT-89 package based on the standard JEDEC 51-3 f or a single-
JA
)MAX(D
)MAX(D
(cont.)
SOT-23
SOT-89
W4.0250/C25C125
W55.0180/C25C125
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+25°C can be calculated by following formula:
A
PAM3101
It is also useful to calculate the junction temperature of the PAM3101 under a set of specific conditions. Suppose the input voltage V the output current I
= 2.8V version of the PAM3101 can be calculated as:
the V
O
And the junction temperature, T T T = 40°C +37.5°C = 77.5°C<T
For this application, T configuration.
P
D
J J
= 300mA and the case temperature TA = +40°C measured by a thermalcouple during operation, the power dissipation for
O

can be calculated as follows:
J
= TA + PD*θJA = 40°C +0.15W*250°C/W
= +125°C
J(MAX)
is lower than the absolute maximum operating junction temperature, +125°C, so it is safe to use the PAM3101 in this
J
mW150A70*V3.3mA300*V8.2V3.3
= 3.3V,
IN
PAM3101
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Ordering Information
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PAM3101
Pin Configuration Package Type Number of Pins Output Voltage
A Type:
1. GND
2. VOUT
3. VIN
B Type:
1. VIN
2. GND
3. EN (EN Default floating
4. NC
5. VOUT
C Type:
1. VOUT
2. GND
3. VIN
D Type:
1. VIN
2.GND
3.EN (EN Default pull high
4.BYP
5.VOUT
E Type:
F Type:
G Type:
H Type:
1. VOUT
2. GND
3. NC
4. EN (EN Default floating
5. VIN
1. EN (EN Default floating
2. NC
3. VIN
4. VOUT
5. NC
6. GND
1. VIN
2. VOUT
3. GND
1. GND
2. VIN
A: TSOT25/SOT23 C: SOT-89 U: SC70 K: DFN1.6x1.6
A: 3 K: 4 B: 5 F: 6
475: 4.75V 400: 4.0V 380: 3.8V 330: 3.3 V 310: 3.1V 290: 2.9V 285: 2.85V 280: 2.8V 250: 2.5V 200: 2.0V 180: 1.8V 150: 1.5V
3. VOUT
PAM3101
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Ordering Information (cont.)
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Ordering Information (cont.)
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PAM3101
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Ordering Information (cont.)
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Ordering Information (cont.)
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Marking Information
Top View
TSOT25
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PAM3101
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Package Outline Dimensions (All dimensions in mm.)
SOT23-3
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Package Outline Dimensions (cont.) (All dimensions in mm.)
TSOT25
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Package Outline Dimensions (cont.) (All dimensions in mm.)
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PAM3101
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Package Outline Dimensions (cont.) (All dimensions in mm.)
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Package Outline Dimensions (All dimensions in mm.)
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PAM3101
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Package Outline Dimensions (All dimensions in mm.)
DFN 1.6x1.6-6L
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IMPORTANT NOTICE
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