Diodes AP65503 User Manual

LIGHT LOAD IMPROVED 5A, 750kHz SYNCH DC/DC BUCK CONVERTER
Description
The AP65503 is a 750kHz switching frequency external compensated
synchronous DC/DC buck converter. It has integrated low R
and low side MOSFETs.
The AP65503 enables continues load current of up to 5A with
efficiency as high as 96%.
The AP65503 implements an automatic custom light load efficiency
improvement algorithm.
The AP65503 features current mode control operation, which enables
fast transient response times and easy loop stabilization.
The AP65503 simplifies board layout and reduces space
requirements with its high level of integration and minimal need for
external components, making it ideal for distributed power
architectures.
The AP65503 is available in a standard Green SO-8EP package and
is RoHS compliant.
DSON
high
Features
Pin Assignments
Applications
P65503
VIN 4.75V to 17V
5A Continuous Output Current, 7A Peak
Efficiency Up to 96%
Automated Light Load improvement
V
750kHz Switching Frequency
External Programmable Soft-Start
Enable Pin
OCP with Hiccup and Thermal Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Adjustable to 2.5 to 12V
OUT
Gaming Consoles
Flat Screen TV sets and Monitors
Set Top Boxes
Distributed power systems
Home Audio
Consumer electronics
Network Systems
FPGA, DSP and ASIC Supplies
Green Electronics
Typical Applications Circuit
AP65503
Document number: DS37127 Rev. 1 - 2
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Figure 1 Typical Application Circuit
April 2014
© Diodes Incorporated
Pin Descriptions
P65503
Pin
Name
BS 1
IN 2
SW 3
GND 4 Ground
FB 5
COMP 6
EN 7
SS 8
EP EP Exposed Pad is connected to ground
Pin
Number
High-Side Gate Drive Boost Input. BS supplies the drive for the high-side N-Channel MOSFET a
0.01µF or greater capacitor from SW to BS to power the high side switch.
Power Input. IN supplies the power to the IC, as well as the step-down converter switches. Drive IN with a 4.75V to 17V power source. Bypass IN to GND with a suitably large capacitor to eliminate noise on the input to the IC. See Input Capacitor.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the output LC filter from SW to the output load. Note that a capacitor is required from SW to BS to power the high-side switch.
Feedback Input. FB senses the output voltage and regulates it. Drive FB with a resistive voltage divider connected to it from the output voltage. The feedback threshold is 0.800V. See Setting the Output Voltage.
Compensation Node. COMP is used to compensate the regulation control loop. Connect a series RC network from COMP to GND. In some cases, an additional capacitor from COMP to GND is required. See Compensation Components.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the regulator; low to turn it off. Attach to IN with a 100k pull up resistor for automatic startup.
Soft-Start Control Input. SS controls the soft-start period. Connect a capacitor from SS to GND to set the soft-start period. A 0.1µF capacitor sets the soft-start period to 13ms. To disable the soft-start feature, leave SS floating.
Functional Block Diagram
Function
AP65503
Document number: DS37127 Rev. 1 - 2
Figure 2 Functional Block Diagram
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P65503
Absolute Maximum Ratings (Note 4) (@T
Symbol Parameter Rating Unit
VIN
VSW
VBS
VFB
VEN
V
COMP
TST
TJ
TL
ESD Susceptibility (Note 5)
HBM Human Body Model 1.5 kV
MM Machine Model 150 V
Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Supply Voltage
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage -0.3V to +6.0 V
Enable/UVLO Voltage -0.3V to +6.0 V
Comp Voltage -0.3V to +6.0 V
Storage Temperature -65 to +150 °C
Junction Temperature +160 °C
Lead Temperature +260 °C
= +25°C, unless otherwise specified.)
A
-0.3 to 20
-1.0 to V
V
-0.3 to VSW +6.0
SW
IN
+0.3
V
V
V
Thermal Resistance
Symbol Parameter Rating Unit
JA
JC
Note: 6. Test condition: SO-8EP: Device mounted on FR-4 substrate (2s2p) 2"x2" PCB, with 2oz copper trace thickness and minimum recommended pad on top
layer and thermal vias to bottom layer ground plane.
Recommended Operating Conditions (Note 7) (@T
Symbol Parameter Min Max Unit
VIN
TA
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
Junction to Ambient SO-8EP (Note 6) 43 °C/W
Junction to Case SO-8EP (Note 6) 6.3 °C/W
= +25°C, unless otherwise specified.)
A
Supply Voltage
Operating Ambient Temperature Range
4.75
-40
17.0 V
+85 °C
AP65503
Document number: DS37127 Rev. 1 - 2
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P65503
Electrical Characteristics (@T
= +25°C, VIN = 12V, unless otherwise specified.)
A
Symbol Parameter Test Conditions Min Typ Max Unit
I
SHDN
R
DS(ON)1
R
DS(ON)2
I
LIMIT
I
LIMIT
IQ
Shutdown Supply Current
Supply Current (Quiescent)
High-Side Switch On-Resistance (Note 8)
Low-Side Switch On-Resistance (Note 8)
HS Current Limit Minimum duty cycle 7 A
LS Current Limit From Drain to Source 0.9 A
High-Side Switch Leakage Current
AVEA
Error Amplifier Voltage Gain (Note 8)
GEA Error Amplifier Transconductance
GCS
FSW
FFB
D
MAX
TON
VFB
COMP to Current Sense Transconductance
Oscillator Frequency
Fold-back Frequency
Maximum Duty Cycle
Minimum On Time
Feedback Voltage
VEN = 0V
VEN = 2.0V, VFB = 1.0V
— —
— —
V
= 0V, VSW = 0V, V
EN
SW
=12V
— — 800 V/V
I
= ±10µA
C
— — 2.8 A/V
V
= 0.75V
FB
V
= 0V
FB
VFB = 800mV
TA = -40°C to +85°C
— 0.3 3.0 µA
0.3 1.5 mA
80
32
m
m
— 0 10 A
— 1000 — µA/V
660 750 840 kHz
— 0.30 —
fSW
— 90 — %
160
800
ns
mV
Feedback Overvoltage Threshold 1.0 V
V
EN_RISING
EN Rising Threshold 0.7 0.8 1.2 V
EN Lockout Threshold Voltage 2.2 2.5 2.7 V
EN Lockout Hysteresis 220 mV
INUV
INUV
V
VTH
VIN Under Voltage Threshold Hysteresis
HYS
Under Voltage Threshold Rising
IN
Soft-Start Current
Soft-Start Period
TSD
Note: 8. Guaranteed by design
Thermal Shutdown (Note 8)
— 3.80 4.05 4.40 V
V
C
SS
SS
= 0V
= 0.1µF
250
6
13
160
mV
A
ms
°C
AP65503
Document number: DS37127 Rev. 1 - 2
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April 2014
© Diodes Incorporated
Typical Performance Characteristics (@T
= +25°C, VIN = 12V, V
A
= 3.3V, unless otherwise specified.)
OUT
P65503
AP65503
Document number: DS37127 Rev. 1 - 2
5 of 15
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