DIODES AP63200, AP63201, AP63203, AP63205 User Manual

AP63200/AP63201/AP63203/AP63205

is a 2A, synchronous

range of 3.8V to 32V and

down DC/DC

easily used by

minimizing the external component count due to its adoption of peak

The AP63200/AP63201/AP63203/AP63205 has optimized designs for

tion. The converter features

Frequency Spread Spectrum (FSS) with a switching frequency jitter of

reduces EMI by not allowing emitted energy to stay in any

It also has a proprietary

without sacrificing

• Halogen and Antimony Free. “Green” Device (Note 3)

1

2

3 4

5

6

FB

EN

VIN GND

SW

BST

TSOT26

TOP VIEW

3.8V TO 32V INPUT, 2A LOW IQ SYNCHRONOUS BUCK WITH ENHANCED EMI REDUCTION

Description

The AP63200/AP63201/AP63203/AP63205
buck converter with a wide input voltage
fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low­side power MOSFET to provide high-efficiency step­conversion.

The AP63200/AP63201/AP63203/AP63205 device is

Pin Assignments

current mode control along with its integrated compensation network.

Electromagnetic Interference (EMI) reduc

±6%, which
one frequency for a significant period of time.
gate driver scheme to resist switching node ringing
MOSFET turn-on and turn-off times, which further erases high­frequency radiated EMI noise caused by MOSFET switching.

The device is available in a low-profile, TSOT26 package.

Features

• VIN 3.8V to 32V

• 2A Continuous Output Current

• 0.8V ± 1% Reference Voltage

• 22µA Ultralow Quiescent Current

• Switching Frequency

o 500kHz: AP63200 and AP63201
o 1.1MHz: AP63203 and AP63205

• Pulse Width Modulation (PWM) Regardless of Output Load

o AP63201

• Supports Pulse Frequency Modulation (PFM)

o AP63200, AP63203, and AP63205
o Up to 80% Efficiency at 1mA Light Load
o Up to 88% Efficiency at 5mA Light Load

• Fixed Output Voltage

o 3.3V: AP63203
o 5.0V: AP63205

• Proprietary Gate Driver Design for Best EMI Reduction

• Frequency Spread Spectrum (FSS) to Reduce EMI

• Precision Enable Threshold to Adjus t UVLO

• Protection Circuitry

o Overvoltage Protection
o Cycle-by-Cycle Peak Current Limit
o Thermal Shutdown

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

• 12V and 24V Distributed Power Bus Supplies

• Flat Screen TV Sets and Monitors

• Power Tools and Laser Printers

• White Goods and Small Home Appliances

• FPGA, DSP, and ASIC Supplies

• Home Audio

• Network Systems

• Set Top Boxes

• Gaming Consoles

• Consumer Electronics

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

Lead-free.
<1000ppm antimony compounds.

AP63200/AP63201/AP63203/AP63205

Document number: DS41326 Rev. 2 - 2

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AP63200/AP63201/AP63203/AP63205

AP63205

L

4.7µH

C3

100nF

C2

2x22μF

C1

10μF

3

VIN

2

EN

5

SW

6

BST

1

FB

4

GND

OUTPUT

V

OUT

5V

INPUT

Feedback sensing terminal for the output voltage. Connect this pin to the resistive divider of the output.

Setting the Output Voltage

programing the UVLO. See Enable section for more details.

Power Input. VIN suppli es the power to the IC, as well as the step-down converter switches. Drive VIN wi th a
switching of the IC. See Input Capacitor section for more details.

4

GND

Power Ground.

Power Switching Output. SW is the switching node that supplies power to the output. Connect the output LC filter
from SW to the output load. Note that a capacitor is required from SW to BST to power the high-side switch.

High-Side Gate Drive Boost Input. BST supplies the drive for the high-side N-Channel MOSFET. A 100nF

Typical Application Circuit

Figure 1. Typical Application Circuit

Figure 2. Efficiency vs. Output Current

Pin Descriptions

Pin Number Pin Name Function

1 FB

2 EN

AP63200/AP63201/AP63203/AP63205

Document number: DS41326 Rev. 2 - 2

3 VIN

5 SW

6 BST

See

section for more details.

Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the regulator and low
to turn it off. Attach to VIN or leave open f or automatic startup. The EN has a precision threshold of 1.18V f or

3.8V to 32V power source. Bypass VIN t o GND with a suitably large capacitor to eliminate noise due to the

capacitor is recommended from SW to BST to power the high-side switch.

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AP63200/AP63201/AP63203/AP63205

0.4V

0.8V

1.1V

+

-

+

-

-

+

0.6V

+

0.8V

Inte rna l SS

Error

Amplifier

PWM

Comparator

Oscillator

+

Logic

-

+

Ref

OCP

7.6nF

18kΩ

SE = 0.84V/T

RT = 0.2V/A

UVP

Q1

Q2

1

2

EN

FB

4

GND

5

SW

6

BST

3

VIN

gm

20kΩ

+

-

Internal

Reference

VCC

Regulator

ON

1.18V

1.5µA 4µA

VSUM

COMP

CSA

Functional Block Diagram

AP63200/AP63201/AP63203/AP63205

Document number: DS41326 Rev. 2 - 2

Figure 3. Functional Block Diagram

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AP63200/AP63201/AP63203/AP63205

Symbol

Parameter

Rating

Unit

IN

BST

SW

SW

Feedback Voltage

-0.3V to +6.0

V

VEN

Enable/UVLO Voltage

-0.3V to +35.0

V

TST

TJ

TL

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Mode

2000

V

CDM

Charge Device Model

1000

V

Symbol

Parameter

Rating

Unit

θ

JA

θ

JC

Symbol

Parameter

Min

Max

Unit

3.8

Operating Ambient Temperature Range

-40

+85

°C

Absolute Maximum Ratings (Note 4) (@T

= +25°C, unless otherwise specified.)

A

VIN

VSW
V

Supply Voltage

Switch Node Voltage

Bootstrap Voltage

-0.3 to +35.0 (DC) V

-0.3 to +40.0 (400ms) V

V

-1.0 to V

- 0.3 to V

+ 0.3

+ 6.0

V
V

VFB

Storage Temperature -65 to +150 °C

Junction Temperature +160 °C

Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.

Thermal Resistance (Note 6)

Junction to Ambient TSOT26 89 °C/W

Junction to Case TSOT26 39 °C/W

Note: 6. Test condition for TSOT26: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout.

Recommended Operating Conditions (Note 7) (@T

= +25°C, unless otherwise specified.)

A

VIN

TA

Note: 7. The device function is not guaranteed outside of the recommended operating conditions.

AP63200/AP63201/AP63203/AP63205

Document number: DS41326 Rev. 2 - 2

Supply Voltage

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32 V

January 2019

© Diodes Incorporated

AP63200/AP63201/AP63203/AP63205

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

I

SHDN

Shutdown Supply Current

VEN = 0V

— 1 3

µA

AP63201:
VEN = OPEN, VFB = 1.0V

AP63200/AP63203/AP63205:

IN

R

DS(ON)1

High-Side Switch On-Resistance (Note 8)

— — 125 — mΩ

R

DS(ON)2

I

PEAK_LIMIT

I

VALLEY_LIMIT

AP63200/AP63201

—

500 — kHz

AP63203/AP63205

—

1100 — kHz

FSS

Frequency Spread Spectrum

— — ±6 — %

tON

CCM, AP63200/AP63201

792

800

808

mV

CCM, AP63203

3.27

3.30

3.33

V

CCM, AP63205

4.95

5.00

5.05

V

V

EN_H

V

EN_L

VEN = 1.5V

VEN = 1V

—

1.5 — μA

tSS

Soft-Start Period

— — 4 — ms

HYS

Electrical Characteristics (T

ambient temperature range, -40°C to +85°C, and input voltage range, 3.8V to 32V).

IQ

UVLO

Supply Current (Quiescent)

V

Under Voltage Threshold (Rising)

VIN Under Voltage Threshold Hysteresis

Low-Side Switch On-Resistance (Note 8) — — 68 — mΩ
HS Peak Current Limit (Note 8) — 2.5 2.8 3.1 A
LS Valley Current Limit (Note 8) — 2.5 3.2 3.9 A

= +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended

A

VEN = OPEN, VFB = 1.0V
— 3.30 3.50 3.70 V
— — 440 — mV

— 258 — µA

— 22 — µA

fSW

Oscillator Frequency

Minimum On Time — — 80 — ns

VFB

Feedback Voltage

EN Logic High — 1.15 1.18 1.23 V
EN Logic Low — 1.05 1.10 1.15 V

IEN

TSD

T

Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design.

EN Input Current

Thermal Shutdown (Note 8) — — +160 — °C
Thermal Hysteresis (Note 8) — — +25 — °C

— 5.5 — μA

AP63200/AP63201/AP63203/AP63205

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AP63200/AP63201/AP63203/AP63205

Figure 4. Efficiency vs. Output Current, VIN = 12V

Figure 5. Efficiency vs. Output Current, VIN = 24V

Figure 6. Load Regulation, VOUT = 5V

Figure 7. Line Regulation, VOUT = 5V

Figure 8. Feedback Voltage vs. Temperature

Figure 9. Power Switch R

vs. Temperature

Typical Performance Characteristics (AP63200 @T

= +25°C, VIN = 12V, V

A

= 5V, unless otherwise specified.)

OUT

AP63200/AP63201/AP63203/AP63205

Document number: DS41326 Rev. 2 - 2

www.diodes.com

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DS(ON)

January 2019

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