Diodes AP2161, AP2171 User Manual

AP2161/ AP2171
Description
The AP2161 and AP2171 are integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB 2.0 and available with both polarities of Enable input. They offer current and thermal limiting and short circuit protection as well as controlled rise time and under-voltage lockout functionality. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components.
All devices are available in SO-8, MSOP-8EP, SOT25, and U-DFN2018-6 packages
Pin Assignments
GND
IN
EN
( Top View )
1
2
3
IN
4
SO-8
8
NC
7
OUT
6
OUT
5
FLG
Features
Single USB Port Power Switches  Over-Current and Thermal Protection  1.5A Accurate Current Limiting  Reverse Current Blocking  95m On-Resistance Input Voltage Range: 2.7V – 5.5V  0.6ms Typical Rise Time  Very Low Shutdown Current: 1µA (max)  Fault Report (FLG) with Blanking Time (7ms typ)  ESD Protection: 4kV HBM, 300V MM  Active Low (AP2161) or Active High (AP2171) Enable  Ambient Temperature Range: -40°C to +85°C  SOT25, SO-8, MSOP-8EP (Exposed Pad), and U-DFN2018-6:
Available in “Green” Molding Compound (No Br, Sb)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)Halogen and Antimony Free. “Green” Device (Note 3)
UL Recognized, File Number E322375  IEC60950-1 CB Scheme Certified
GND
IN
( Top View )
1
2
3
6
5
4
OUT OUT FLGEN
Applications
Consumer electronics – LCD TV & Monitor, Game Machines  Communications – Set-Top-Box, GPS, Smartphone  Computing – Laptop, Desktop, Servers, Printers, Docking
Station, HUB
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
www.diodes.com
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U-DFN2018-6
March 2013
© Diodes Incorporated
AP2161/ AP2171
Typical Applications Circuit
AP2171 Enable Active High
Power Supply
2.7V to 5.5V
10uF
10k
ON
OFF
IN
0.1uF
FLG
EN
GND
OUT
0.1uF 120uF
Load
Available Options
Part Number Channel Enable Pin (EN)
AP2161 1 Active Low 1.5A 1.0A AP2171 1 Active High 1.5A 1.0A
Current Limit
(typ)
Recommended Maximum Continuous
Load Current
Pin Descriptions
Pin
Name
GND 1 1 2 1 Ground
IN
EN 4 4 4 3 Enable input, active low (AP2161) or active high (AP2171)
FLG 5 5 3 4
OUT
NC
Exposed tab - Exposed tab - Exposed tab
SO-8 MSOP-8EP SOT25 U-DFN2018-6
2, 3 2, 3 5 2 Voltage input pin (all IN pins must be tied together externally )
6, 7 6, 7 1 5, 6 Voltage output pin (all OUT pins must be tied together externally )
8 8 N/A N/A No internal connection; recommend tie to OUT pins
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
Pin Number
Function
Over-current and over-temperature fault report; open-drain flag is active low w hen triggered
Exposed pad. It should be connected to GND and thermal mass for enhanced thermal
impedance. It sho u l d n ot be u s e d as elec t r i cal g r o u nd co n d ucti o n p a t h.
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© Diodes Incorporated
Functional Block Diagram
AP2161/ AP2171
AP2161, AP2171
IN
UVLO
EN
Driver
Thermal
Sense
Current
Sense
Current
Limit
Deglitch
GND
OUT
FLG
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Ratings Units
ESD HBM Human Body Model ESD Protection 4 kV
Machine Model ESD Protection
ESD MM
for MSOP-8EP, SOT25 packages Machine Model ESD Protection
for U-DFN2018-6, SO-8 packages
VIN
V
OUT
V
EN , VFLG
I
LOAD
T
J(MAX)
TST
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices
Note: 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified
Input Voltage 6.5 V Output Voltage Enable Voltage 6.5 V Maximum Continuous Load Current Internal Limited A Maximum Junction Temperature 150 °C Storage Temperature Range (Note 4) -65 to +150 °C
T
from -65°C to +150°C)
ST
400 V
300 V
VIN +0.3
V
Recommended Operating Conditions (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Min Max Units
V
IN
I
OUT
T
A
VIH High-Level Input Voltage on EN or EN
VIL Low-Level Input Voltage on EN or EN
Input voltage 2.7 5.5 V Output Current 0 1.0 A Operating Ambient Temperature -40 +85
2.0
VIN
C
0 0.8 V
V
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
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March 2013
© Diodes Incorporated
AP2161/ AP2171
Electrical Characteristics (@T
= +25°C, VIN = +5V, unless otherwise specified.)
A
Symbol Parameter Test Conditions Min Typ Max Unit
V
UVLO
I
SHDN
I
LEAK
I
REV
R
DS(ON)
I
SHORT
I
LIMIT
I
I
SINK
t
D(ON)
t
D(OFF)
Input UVLO Input Shutdown Current Input Quiescent Current
I
Q
R
= 1k
LOAD
Disabled, I Enabled, I
OUT
OUT
= 0
= 0 Input Leakage Current Disabled, OUT grounded 1 µA Reverse Leakage Current
Switch on-resistance
Short-Circuit Current Limit Over-Load Current Limit Current limiting trigger threshold
Trig
EN Input leakage Output turn-on delay time Output turn-on rise time
tR
Output turn-off delay time Output turn-off fall time
tF
Disabled, V V
= 5V,
IN
I
= 1A
OUT
VIN = 3.3V,
= 1A
I
OUT
= 0V, V
IN
T
= +25°C
A
OUT
-40°C TA  +85°C T
= +25°C
A
-40°C TA  +85°C
= 5V, I
REV
at VIN SOT25, MSOP-8EP, SO-8 95 115 U-DFN2018-6 90 110
Enabled into short circuit, CL = 68µF V
= 5V, V
IN
= 4.6V, CL = 68µF, -40°C  TA  +85°C
OUT
Output Current Slew rate (<100A/s) , CL=68µF V
= 5V
EN
CL = 1µF, R CL = 1µF, R CL = 1µF, R CL = 1µF, R
LOAD LOAD LOAD LOAD
= 10 = 10 = 10 = 10
1.6 1.9 2.5 V
0.5 1 A 45 70 µA
1 µA
140
m
120 140 170
1.2 A
1.1 1.5 1.9 A
2.0 A 1 µA
0.05 ms
0.6 1.5 ms
0.01 ms
0.05 0.1 ms
Fault Flag
R t
Blank
FLG output FET on-resistance
FLG
FLG blanking time
I
= 10mA
FLG
C
= 10µF, CL = 68µF
IN
20 40
4 7 15 ms
Over-Temperature Protection
T
SHDN
T
Thermal Shutdown Threshold Thermal Shutdown Hysteresis 25
HYS
Enabled, R
LOAD
= 1k
140
C C
SO-8 (Note 5) 110 °C/W
Thermal Resistance Junction-to-
JA
Ambient
MSOP-8EP (Note 6) 60 °C/W SOT25 (Note 7) 157 °C/W U-DFN2018-6 (Note 8) 70 °C/W
Notes: 5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.
7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer 1.0”x1.4” ground plane.
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
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March 2013
© Diodes Incorporated
Typical Performance Characteristics
AP2161/ AP2171
Ven 5V/div
Vout 2V/div
V
EN
V
OUT
50%
T
D(ON)
T
10%
50%
T
R
90%
D(OFF)
90%
10%
T
F
V
EN
50%
T
T
D(ON)
V
OUT
10%
50%
T
R
90%
D(OFF)
90%
10%
T
F
Figure 1 Voltage Waveforms: AP2161 (left), AP2171 (right)
All Enable Plots are for AP2171 Active High
Turn-On Delay and Rise Time
500µs/div
CL = 1µF TA = +25°C RL = 10
Ven 5V/div
Vout 2V/div
Turn-Off Delay and Fall Time
CL = 1µF TA = +25°C RL = 10
500µs/div
Turn-On Delay and Rise Time
Ven 5V/div
Vout 2V/div
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
500µs/div
Ven 5V/div
Vout 2V/div
CL = 100µF TA = +25°C RL = 10
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Turn-Off Delay and Fall Time
500µs/div
CL = 100µF TA = +25°C RL = 10
March 2013
© Diodes Incorporated
Typical Performance Characteristics (cont.)
Short Circuit Current,
Device Enabled Into Short
AP2161/ AP2171
Inrush Current
Ven 5V/div
Iout 500mA/div
Vflag 2V/div
Iout 1A/div
V
IN
TA = +25°C CL = 68µF
500µs/div
1 Load Connected to Enabled Device
= 5V
V
IN TA = +25°C CL = 68µF
= 5V
Ven 5V/div
Iout 200mA/div
=100µF
C
L
C
=220µF
L
CL=470µF
V
= 5V
IN
TA = +25°C RL = 5
1ms/div
2 Load Connected to Enabled Device
V
= 5V
IN
Vflag 2V/div
Iout 1A/div
TA = +25°C
=
Short Circuit with Blanking Time and Recovery
Vout 5V/div
Vflag 5V/div
Iout 1A/div
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
2ms/div
20ms/div
V
= 5V
IN
TA = +25°C CL = 68µF
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Vflag 5V/div
Iout 500mA/di v
Ven 5V/div
Vin 5V/div
2ms/div
Power On
1ms/div
TA = +25°C CL = 68µF RL = 5
March 2013
© Diodes Incorporated
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