DELL AO4601 Schematics

AO4601

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

p-channel

The AO4601 uses advanced trench technology

VDS (V) = 30V

-30V

MOSFETs to provide excellent RDS(ON) and low

ID = 4.7A (VGS=10V) -8A (VGS = -20V)

gate charge. The complementary MOSFETs may

RDS(ON)

RDS(ON)

be used to form a level shifted high side switch,

< 55mΩ (VGS=10V)

< 18mΩ (VGS = -20V)

and for a host of other applications. Standard

< 70mΩ (VGS=4.5V)

< 19mΩ (VGS = -10V)

Product AO4601 is Pb-free (meets ROHS & Sony

< 110mΩ (VGS = 2.5V)

259 specifications). AO4601L is a Green Product

ordering option. AO4601 and AO4601L are

S2

D2

D2

D1

1

8

G2

2

7

D2

S1

3

6

D1

G1

4

5

D1

G2

G1

S2

S1

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±12

±25

V

Continuous Drain

TA=25°C

4.7

-8

Current A

TA=70°C

ID

4

-6.9

A

Pulsed Drain Current B

IDM

30

-50

TA=25°C

PD

2

2

W

Power Dissipation

TA=70°C

1.44

1.44

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max

Units

Maximum Junction-to-Ambient A

t ≤ 10s

RθJA

n-ch

52

62.5

°C/W

Maximum Junction-to-Ambient A

Steady-State

n-ch

78

110

°C/W

Maximum Junction-to-Lead C

Steady-State

RθJL

n-ch

48

60

°C/W

Maximum Junction-to-Ambient A

t ≤ 10s

RθJA

p-ch

50

62.5

°C/W

Maximum Junction-to-Ambient A

Steady-State

p-ch

73

110

°C/W

Maximum Junction-to-Lead C

Steady-State

RθJL

p-ch

31

40

°C/W

Alpha & Omega Semiconductor, Ltd.

AO4601

n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol	Parameter	Conditions		Min	Typ	Max	Units
STATIC PARAMETERS
BVDSS	Drain-Source Breakdown Voltage	ID=250µA, VGS=0V		30			V
IDSS	Zero Gate Voltage Drain Current	VDS=24V, VGS=0V				1	µA
			TJ=55°C			5
IGSS	Gate-Body leakage current	VDS=0V, VGS=±12V				100	nA
VGS(th)	Gate Threshold Voltage	VDS=VGS ID=250µA		0.6	1	1.4	V
ID(ON)	On state drain current	VGS=4.5V, VDS=5V		10			A
		VGS=10V, ID=4A			45	55	mΩ
RDS(ON)	Static Drain-Source On-Resistance		TJ=125°C		66	80
		VGS=4.5V, ID=3A			55	70	mΩ
		VGS=2.5V, ID=2A			83	110	mΩ
gFS	Forward Transconductance	VDS=5V, ID=4A			8		S
VSD	Diode Forward Voltage	IS=1A,VGS=0V			0.8	1	V
IS	Maximum Body-Diode Continuous Current					2.5	A
DYNAMIC PARAMETERS
Ciss	Input Capacitance				390		pF
Coss	Output Capacitance	VGS=0V, VDS=15V, f=1MHz			54.5		pF
Crss	Reverse Transfer Capacitance				41		pF
Rg	Gate resistance	VGS=0V, VDS=0V, f=1MHz			3		Ω
SWITCHING PARAMETERS
Qg	Total Gate Charge				0.6		nC
Qgs	Gate Source Charge	VGS=4.5V, VDS=15V, ID=4A			1.38		nC
Qgd	Gate Drain Charge				4.34		nC
tD(on)	Turn-On DelayTime				3.3		ns
tr	Turn-On Rise Time	VGS=10V, VDS=15V, RL=3.75Ω,			1		ns
tD(off)	Turn-Off DelayTime	RGEN=6Ω			21.7		ns
tf	Turn-Off Fall Time				2.1		ns
trr	Body Diode Reverse Recovery Time	IF=4A, dI/dt=100A/µs			12		ns
Qrr	Body Diode Reverse Recovery Charge	IF=4A, dI/dt=100A/µs			6.3		nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C.The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D.The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

Rev 3 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

AO4601

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15	10V				10
12			3V		8
		4.5V
9					6
(A)				2.5V	(A)
D					D
I					I
6					4
3				VGS=2V	2
0					0
0	1	2	3	4	5
		VDS (Volts)

Fig 1: On-Region Characteristics

	150						1.8
	125					Resistance	1.6
			VGS=2.5V
	100
(mΩ)
	75						1.4
DS(ON)						On-
	50			VGS=4.5V			1.2
R						Normalized
	25			VGS=10V			1
	0
	0	2	4	6	8	10	0.8
				ID (A)

			VDS=5V
			125°C
				25°C
0	0.5	1	1.5	2	2.5	3	3.5

VGS(Volts)

Figure 2: Transfer Characteristics

				VGS=4.5V
						VGS=10V
					VGS=2.5V
0	25	50	75	100	125	150	175

Figure 3: On-Resistance vs. Drain Current and Gate	Temperature (°C)
Voltage	Figure 4: On-Resistance vs. Junction Temperature

	200							1.0E+01
								1.0E+00
	150				ID=2A			1.0E-01
									125°C
)
(mΩ							(A)	1.0E-02
	100
							S
DS(ON)					125°C		I	1.0E-03
R								1.0E-04			25°C
	50			25°C
								1.0E-05
	0							1.0E-06
	0	2	4	6	8	10		0.0	0.2	0.4	0.6	0.8	1.0	1.2
			VGS (Volts)								VSD (Volts)
		Figure 5: On-Resistance vs. Gate-Source Voltage							Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.