Dell 70633 Schematics

Si4558DY

Vishay Siliconix

N- and P-Channel 30-V (D-S) MOSFET

D C

VDS (V)

rDS(on) ( )

ID (A)

N-Channel

30

0.040 @ VGS = 10 V

6

0.060 @ VGS = 4.5 V

4.8

P-Channel

±30

0.040 @ VGS = ±10 V

6

0.070 @ VGS = ±4.5 V

4.4

S2

S1

SO-8

D

G2

1

8

G1

D

2

7

D

S2

D

3

6

G2

4

5

D

G1

Top View

S1

C H D

	Parameter		Symbol	N-Channel			P-Channel	Unit
Drain-Source Voltage			VDS	30			±30	V
Gate-Source Voltage			VGS	20			20
Continuous Drain Current (T	= 150 C)a	TA = 25 C	I	6			6
J		TA = 70 C	D	4.7			4.7	A
Pulsed Drain Current			IDM	30			30
Continuous Source Current (Diode Conduction)a			I	2			±2
			S
Maximum Power Dissipationa		TA = 25 C	P			2.4		W
		TA = 70 C	D			1.5
Operating Junction and Storage Temperature Range			TJ, Tstg		±55 to 150			C

H C

Parameter	Symbol	N- or P- Channel	Unit
Maximum Junction-to-Ambienta	RthJA	52	C/W

Notes

a.Surface Mounted on FR4 Board, t 10 sec.

Document Number: 70633	www.vishay.com FaxBack 408-970-5600
S-56944ÐRev. E, 23-Nov-98	2-1

Si4558DY

Vishay Siliconix

SPECIFIC TIONS T C UN ESS OTHERWISE NOTED
J
Parameter	Symbol	Test Condition		Min	Typa	Max	Unit
Static
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 mA	N-Ch	1.0			V
			P-Ch
		VDS = VGS, ID = ±250 mA		±1.0
Gate-Body Leakage	IGSS	VDS = 0 V, VGS = 20 V				100	nA
		VDS = 30 V, VGS = 0 V	N-Ch			1
Zero Gate Voltage Drain Current	IDSS	VDS = ±30 V, VGS = 0 V	P-Ch			±1	mA
		VDS = 24 V, VGS = 0 V, TJ = 70 C	N-Ch			5
		VDS = ±24 V, VGS = 0 V, TJ = 70 C	P-Ch			±5
		VDS = 5 V, VGS = 10 V	N-Ch	30
On-State Drain Currentb	I	VDS = ±5 V, VGS = ±10 V	P-Ch	±30			A
	D(on)	VDS = 5 V, VGS = 4.5 V	N-Ch	8.0
		VDS = ±5 V, VGS = ±4.5 V	P-Ch	±8.0
		VGS = 10 V, ID = 6 A	N-Ch		0.032	0.040
			P-Ch
		VGS = ±10 V, ID = ±6 A			0.032	0.040
Drain-Source On-State Resistanceb	r
	DS(on)	VGS = 4.5 V, ID = 4.8 A	N-Ch		0.045	0.060
			P-Ch
		VGS = ±4.5 V, ID = ±4.4 A			0.056	0.070
Forward Transconductanceb	g	VDS = 15 V, ID = 6 A	N-Ch		13		S
	fs	VDS = ±15 V, ID = ±6 A	P-Ch		10.6
Diode Forward Voltageb	V	IS = 2 A, VGS = 0 V	N-Ch		0.77	1.2	V
	SD	IS = ±2 A, VGS = 0 V	P-Ch		0.77	±1.2
Dynamica
Total Gate Charge	Qg		N-Ch		16	30
		N-Channel	P-Ch		22	35
		VDS = 15 V, VGS = 10 V, ID = 6 A
Gate-Source Charge	Qgs		N-Ch		3.4		nC
		P-Channel	P-Ch		5.4
		VDS = ±15 V, VGS = ±10 V
Gate-Drain Charge	Qgd	ID = ±6 A	N-Ch		2.3
			P-Ch		3.6
Turn-On Delay Time	td(on)		N-Ch		12	25
			P-Ch		12	25
		N-Channel
			N-Ch		12	25
Rise Time	t	VDD = 15 V, RL = 15
	r	ID ^ 1 A, VGEN = 10 V, RG = 6	P-Ch		12	25
Turn-Off Delay Time	td(off)	P-Channel	N-Ch		27	55	ns
		VDD = ±15 V, RL = 15	P-Ch		38	55
		ID ^ ±1 A, VGEN = ±10 V, RG = 6
Fall Time	tf		N-Ch		24	50
			P-Ch		25	50
Source-Drain Reverse Recovery Time	trr	IF = 2 A, di/dt = 100 A/ms	N-Ch		45	80
		IF = ±2 A, di/dt = 100 A/ms	P-Ch		50	80

Notes

a.Guaranteed by design, not subject to production testing.

b.Pulse test; pulse width v 300 ms, duty cycle v 2%.

www.vishay.com FaxBack 408-970-5600	Document Number: 70633
2-2	S-56944ÐRev. E, 23-Nov-98

		Si4558DY
		Vishay Siliconix
TYPIC L CH R CTERISTICS 25C UNLESS NOTED		N-CH NNEL

	30	Output Characteristics
	24		VGS =	10, 9, 8, 7, 6, 5 V
(A)	18
Current
						4 V
Drain	12
±
D
I	6
						3 V
	0
	0	1	2	3	4	5
		VDS ±	Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

	0.150
	0.125
( )	0.100
-Resistance
	0.075
			VGS = 4.5 V
On
±	0.050				VGS = 10 V
DS(on)
	0.025
r
	0
	0	6	12	18	24	30

ID ± Drain Current (A)

Gate Charge

	10
(V)	8	VDS = 15 V
		ID = 6 A
Voltage	6
-to-Source
	4
Gate
±	2
GS
V
	0
	0	4	8	12	16
		Qg	± Total Gate Charge (nC)

Transfer Characteristics

	30
	24
(A)	18
Current
Drain	12
±			TC = 125 C
D
I	6
		25 C			±55 C
	0
	0	1	2	3	4	5	6
		VGS ± Gate-to-Source Voltage (V)
	1500			Capacitance
	1200
(pF)						Ciss
Capacitance	900
	600
±
C				Coss
	300	Crss
	0
	0	6		12	18	24	30
		VDS ±	Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

		2.0
		1.6	VGS = 10 V
)			ID = 6 A
(
On-Resistance	(Normalized)	1.2
		0.8
±
DS(on)		0.4
r
		0
		±50	0	50	100	150
			TJ ± Junction Temperature ( C)

Document Number: 70633	www.vishay.com FaxBack 408-970-5600
S-56944ÐRev. E, 23-Nov-98	2-3