Datasheet US5U3 Datasheet (ROHM)

Page 1
US5U3
Transistors
2.5V Drive Nch+SBD MOSFET
US5U3
zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET / Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackage specifications zInner circuit
Type
US5U3
Package Code Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Drain-source voltage Gate-source voltage
Drain current Source current
(Body diode) Power dissipation Channel temperature
1 Pw10µs, Duty cycle1%2 Mounted on a ceramic board
Parameter
Continuous Pulsed Continuous Pulsed
Symbol
DSS GSS
D
DP
S
SP
P
D
Limits Unit
±1.5
1
±6.0
0.6
1
6.0
2
150
30 12
W / ELEMENT0.7
<Di>
Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature
1 60Hz 1cycle2 Mounted on ceramic board
Parameter
Symbol
RM
R
I
F
I
FSM
P
D
Tj
Limits Unit
25 20
0.7
1
3.0
2
0.5
150
W / ELEMENT
°C
1 ESD protection diode2 Body diode
VV VV AI AI AI AI
°CTch
VV VV A A
TUMT5
Abbreviated symbol : U03
(5)
1
(1) (2)
2.0
1.3
0.2Max.
(4)
2
(1)Gate (2)Source (3)Anode
(3)
(4)Cathode (5)Drain
Rev.B 1/3
Page 2
Transistors
<MOSFET and Di>
Parameter Symbol Total power dissipation Range of storage temperature
1 Mounted on a ceramic board
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter Symbol Gate-source leakage
Drain-source breakdown voltage Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge
Gate-source charge Gate-drain charge
Pulsed
<Body diode characteristics (Souce-drain)>
Parameter Symbol
<Di>
Parameter Symbol Forward voltage Reverse current
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C C
t
d (on)
t
d (off)
Q
Q
V
GSS
DSS
Y
oss rss
t
t
Q
SD
V I
R
fs
iss
r
f
g gs gd
F
Limits Unit
1
D
1.0
W / TOTALP
55 to +150
Min.−Typ. Max.
Unit
10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 1.5 V V
170 240 I
180 250 m
240 340 I
1.5 −−SV
m
m
80 pF V
1412− pF V
−−nC R
Min. Typ. Max.
pF f=1MHz
7
ns
9
ns
15
ns
6
ns
1.6
2.2 nC
0.5
nC I
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
D
= 1.5A, VGS= 4V
I
D
= 1.5A, VGS= 2.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
V
DD
15V
ID= 0.75A V
GS
= 4.5V
R
L
= 20
R
G
=10
15V, VGS= 4.5V
V
DD
= 1.5A
D
= 10Ω, RG= 10
L
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Min. Typ. Max.
−−
−−
Unit
0.49 V 200
µA
= 0.7A
I
F
V
R
= 20V
US5U3
°CTstg
Conditions
Conditions
Conditions
Rev.B 2/3
Page 3
Transistors
zElectrical characteristics curves
1000
Ta=25°C f=1MHz
GS
=0V
V
100
10
CAPACITANCE : C (pF)
1
0.01
DRAIN-SOURCE VOLTAGE : VDS (V)
vs. Drain-Source Voltage
10
1
(A)
D
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 0.5 1.0 2.01.5 2.5
Fig.4 Typical Transfer Characteristics
Ciss
Crss
Coss
0.1 1 10 100
Fig.1 Typical Capacitance
Ta=125°C
75°C 25°C
25°C
GATE-SOURCE VOLTAGE : VGS (V)
VDS=10V Pulsed
1000
100
10
SWITCHING TIME : t (ns)
1
0.01
tf
td(off)
td(on)
tr
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
1.0
0.9
()
0.8
DS
0.7
0.6
0.5
0.4
0.3
0.2
0.1
ON-STATE RESISTANCE : R
STATIC DRAIN-SOURCE
0
0
On-State Resistance vs.
ID=1.5A
ID=
0.75A
123 10456789
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
Gate source Voltage
Ta=25°C
DD
=15V
V V
GS
=4.5V
G
=10
R Pulsed
Ta=25°C Pulsed
6
Ta=25°C
DD=15V
V
(V)
D=1.5A
I
5
GS
G=10
R Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0
10.5 1.5 2
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
(A)
S
0.1
Ta=125°C
1
75°C 25°C
25°C
SOURCE CURRENT : I
0.01
0.0
0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
US5U3
VGS=0V Pulsed
10
()
DS (on)
1
Ta=125°C
75°C 25°C
25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
VGS=4.5V Pulsed
10
()
DS (on)
1
Ta=125°C
75°C 25°C
25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
VGS=4.0V Pulsed
10
()
DS (on)
Ta=125°C
1
75°C 25°C
25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
VGS=2.5V Pulsed
Rev.B 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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