Datasheet US5U2 Datasheet (ROHM)

US5U2

Transistors

4V Drive Nch+SBD MOSFET

US5U2

zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET / Schottky barrier diode

zFeatures

1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.

2) High-speed switching, Low On-resistance.

3) 4V drive.

4) Built-in Low V

F schottky barrier diode.

zApplications

Switching

zPackaging specifications zInner circuit

Type

US5U2

Package Code Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current Source current

(Body diode) Power dissipation

Channel temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Continuous Pulsed Continuous Pulsed

Symbol

DSS GSS

D

DP

S

SP

P

D

Limits Unit

30 20

±1.4

∗1

±5.6

0.6

∗1 ∗2

5.6

150

TUMT5

(5)

(1) (2)

∗1 ESD protection diode ∗2 Body diode

VV VV AI AI AI AI

W / ELEMENT0.7

°CTch

2.0

1.3

Abbreviated symbol : U02

(4)

∗2

∗1

(3)

(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain

0.2Max.

Rev.B 1/4

Transistors

<Di>

Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature

∗1 60Hz 1cycle ∗2 Mounted on ceramic board

Parameter Symbol Total power dissipation Range of storage temperature

∗1 Mounted on a ceramic board

zElectrical characteristics (T a=25°C)

Parameter Symbol Gate-source leakage

Drain-source breakdown voltage Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge

Gate-source charge Gate-drain charge

∗Pulsed

Parameter Symbol

<Di>

Parameter Symbol Forward voltage

I

V

(BR) DSS

I

V

GS (th)

R

DS (on)

C

C C

t

d (on)

t

d (off)

Q

V

GSS

DSS

Y

t

Q

SD

V

I

fs

iss oss rss

r

f

g gs gd

F

R

Symbol

RM

R

I

F

I

FSM

P

D

Tj

∗1 ∗2

Limits Unit

30 20

0.5

2.0

0.5

W / ELEMENT

150

Limits Unit

∗1

D

1.0

W / TOTALP

−55 to +150

Min.−Typ. Max.

Unit

− 10 µAVGS=20V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

1.0 − 2.5 V V

− 170 240 I

∗

− 250 350 mΩ

− 270 380 I

∗

1.0 −−SV

mΩ

− 70 − pF V

− 1512− pF V

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−−nC R

Min. Typ. Max.

− pF f=1MHz

6

− ns

6

− ns

13

− ns

8

− ns

1.4

2.0 nC

0.6

− nC I

0.3

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.4A, VGS= 10V

D

I

= 1.4A, VGS= 4.5V

D

= 1.4A, VGS= 4V

D

= 10V, ID= 1.4A

DS

= 10V

DS

=0V

GS

V

DD

15V

ID= 0.7A V

GS

= 10V

R

L

= 21Ω

R

G

=10Ω

15V, VGS= 5V

V

DD

= 1.4A

D

= 11Ω, RG= 10Ω

L

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Min. Typ. Max.

Unit

−−0.36 V IF= 0.1A

−−0.47 V I

0.5A

F

−−100 µAVR= 20VReverse current

US5U2

VV VV A A

°C

°CTstg

Conditions

Rev.B 2/4

Transistors

zElectrical characteristics curves

1000

Ta=25°C f=1MHz

GS

=0V

V

100

10

CAPACITANCE : C (pF)

1

0.01

0.1 1 10 100

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

10

1

(A)

D

0.1

0.01

DRAIN CURRENT : I

0.001

Ta=125°C

75°C 25°C

−25°C

0.5 1.0 2.01.5 4.02.5 3.0 3.5

GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Typical Transfer Characteristics

10000

(mΩ)

Ta=125°C

DS (on)

1000

75°C 25°C

−25°C

VDS=10V Pulsed

VGS=10V Pulsed

Ciss

Coss

Crss

1000

100

10

tf

td(off)

td(on)

SWITCHING TIME : t (ns)

tr

1

0.01

0.1 1 10

DRAIN CURRENT : ID (A)

Fig.2 Switching Characteristics

1000

900

(mΩ)

800

DS

ID=0.7A

700 600

500 400 300 200 100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

ID=1.4A

210468

GATE-SOURCE VOLTAGE : VGS (V)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-source Voltage

10000

(mΩ)

Ta=125°C

1000

75°C 25°C

−25°C

DS (on)

Ta=25°C V

DD

=15V

GS

=10V

V R

G

=10Ω

Pulsed

Ta=25°C Pulsed

VGS=4.5V Pulsed

10

Ta=25°C

9

V

DD

=15V

(V)

I

D

=1.4A

GS

8

R

G

=10Ω

Pulsed

7 6 5 4 3 2 1

GATE-SOURCE VOLTAGE : V

0

TOTAL GATE CHARGE : Qg (nC)

Fig.3 Dynamic Input Characteristics

10

(A)

S

1

0.1

SOURCE CURRENT : I

0.01

0.0

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.6 Source Current vs.

Source-Drain Voltage

10000

(mΩ)

Ta=125°C

1000

75°C 25°C

−25°C

DS (on)

US5U2

123

VGS=0V Pulsed

Ta=125°C

75°C 25°C

−25°C

0.5 1.0 1.5

VGS=4V Pulsed

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

10

0.01

0.1

110

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

10

0.01

0.1

110

DRAIN CURRENT : ID (A)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙ )

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

10

0.01

0.1

110

DRAIN CURRENT : ID (A)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙΙ )

Rev.B 3/4

Transistors

1000

(mΩ)

DS (on)

VGS=4V VGS=4.5V

VGS=10V

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

100

0.1

DRAIN CURRENT : ID (A)

Fig.10 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

110

Ta=25°C Pulsed

US5U2

Rev.B 4/4

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1