Datasheet UPC358C Specification

Page 1
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
LOW POWER DUAL OPERATIONAL AMPLIFIERS
PC358
DESCRIPTION
The µPC358 is a dual operational amplifier which is designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the power supply current drain is very low. Further advantage, the input common­mode voltage range includes ground in the linear mode.
EQUIVALENT CIRCUIT (1/2 Circuit)
+
100 A
6 Aµ6 A
Q
Q
I
I
I
N
2
Q
1
Q
Q
8
µ
3
9
C
Q
C
4
Q
Q
10
µ
Q
5
Q
7
11
Q
12
50 A
µ
V
Q
6
R
SC
OUT
Q
13
V
FEATURES
• Internally frequency compensation
• Wide output voltage swing V– to V+ –1.5 V
• Common mode input voltage range includes V
• Wide supply voltage range 3 V to 30 V (Single) ±1.5 V to ±15 V (Split)
• Output short circuit protection
PIN CONFIGURATION (Marking Side)
PC358C, 358G2
µ
OUT
I
V
I
I1
N1
1
1
2
3
4
µ
1
+
PC358HA
+
8
V
7
OUT
2
+
2
6
I
I2
5
I
N2
ORDERING INFORMATION
Part Number Package
µ
PC358C 8-pin plastic DIP (300 mil)
µ
PC358G2 8-pin plastic SOP (225 mil)
µ
PC358HA 9-pin slim SIP
The information in this document is subject to change without notice.
Document No. G11765EJ4V0DS00 (4th edition) (Previous No. IC-1284) Date Published May 1997 N Printed in Japan
The mark shows major revised points.
1
123456789
1
+
I1
I
V
OUT
2
+
+–
N1
V
I
2
+
I2
N2
I
I
V
OUT
©
1997
Page 2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Symbol Ratings Unit Voltage between V+ and V Differential Input Voltage VID ±32 V Input Voltage Note 2 VI V––0.3 to V–+32 V Output Voltage Note 3 VO V––0.3 to V++0.3 V Power Dissipation C Package Note 4 PT 350 mW
Output Short Circuit Duration Note 6 Indefinite s Operating Ambient Temperature TA –20 to +80 ° C Storage Temperature Tstg –55 to +125 ° C
G2 Package Note 5 440 mW HA Package Note 4 350 mW
Note 1 V+ – V
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction independent of the magnitude
+
of V
. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics.
4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C.
5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and
Note 5.
–0.3 to +32 V
µ
PC358
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (Split) V Supply Voltage (V– = GND) V
±
+
±1.5 ±15 V
+3 +30 V
ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = +5 V, V– = GND)
Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage VIO RS = 0 Ω±2±7mV Input Offset Current IIO ±5 ± 50 nA Input Bias Current Note 7 IB 45 250 nA Large Signal Voltage Gain AV RL 2 k 25 100 V/mA Supply Current ICC RL = , IO = 0 A, Both Amplifiers 0.7 1.2 mA Common Mode Rejection Ratio CMR 65 70 dB Supply Voltage Rejection Ratio SVR 65 100 dB Output Voltage Swing VO RL = 2 k (Connect to GND) 0 V+ –1.5 V Common Mode Input Voltage Range VICM 0V Output Current (SOURCE) IO SOURCE VIN+ = +1 V, VIN– = 0 V 20 40 mA Output Current (SINK) IO SINK VIN– = +1 V, VIN+ = 0 V 10 20 mA
VIN– = +1 V, VIN+ = 0 V, 12 50 VO = 200 mV
Channel Separation f = 1 kHz to 20 kHz 120 dB
Note 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input
stage.
+
–1.5 V
µ
A
2
Page 3
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.)
µ
PC358
POWER DISSIPATION
600
500
PC358G2
µ
400
µ
PC358C, 358HA
300
200
100
- Total Power Dissipation - mW
T
P
0
20 40 60 80 100
TA - Operating Ambient Temperature - °C
INPUT OFFSET VOLTAGE
3
2
1
- Input Offset Voltage - mV
IO
V
0
0
10 20 30 40
+
- Supply Voltage - V (V– = GND)
V
TA = 25 ˚C
4
3
V
A
+
I
CC
– +
2
SUPPLY CURRENT
1
- Supply Current - mA
CC
I
TA = 0 to 70 °C
TA = –20 °C
0 10203040
+
V
- Supply Voltage - V (V
= GND)
INPUT OFFSET VOLTAGE
5 4
+
V
= 5 V
3 2 1
0 –1 –2
- Input Offset Voltage - mV
IO
–3
V
–4
–50
T
A
- Operating Ambient Temperature - ˚C
0 50 100
INPUT BIAS CURRENT
100
75
50
TA= 25 °C
25
- Input Bias Current - nA
B
I
040
V+ - Supply Voltage - V (V
302010
= GND)
- Input Bias Current - nA
B
I
INPUT BIAS CURRENT
100
+
= +15 V
V
= GND
80
V
60
40
20
0 –50 100
500
TA - Operating Ambient Temperature - ˚C
3
Page 4
µ
y
µ
PC358
OUTPUT SHORT CIRCUIT CURRENT
70
60
– +
50
40
- Output Short Circuit Current - mA
O SHORT
I
30
–20
0 20 60 80 10 100 k 10 M
A
- Ambient Temperature - ˚C
T
40 10 k100 1 k 1 M
OPEN LOOP VOLTAGE GAIN
160
RL = 20 k
120
RL = 2 k
80
I
O SHORT
OPEN LOOP FREQUENCY RESPONSE
140
120
100
80
V
IN
0.1 F
µ
V+/2
10 M
60
V+ = 30 V
40
V+ = 10 to 15 V
20
Aυ - Open Loop Voltage Gain - dB
0
1
f - Frequency - Hz
LARGE SIGNAL FREQUENCY RESPONSE
20
p-p
15
1 k
V
IN
+7 V
10
– +
100 k
+15 V – +
+
V
V
O
V
O
2 k
40
- Open Loop Voltage Gain - dB
V
A
0
10 20 30 40
+
V
- Supply Voltage - V (V
= GND)
COMMON MODE REJECTION RATIO
120
100
80
60
40
20
0
100
CMR - Common Mode Rejection Ratio - dB
1 k 10 k 100 k 1 M
f - Frequenc
- Hz
5
- Output Voltage Swing -V
O
V
0 1 k
3 5 10 k
30 50 100 k 300 500
f - Frequency - Hz
VOLTAGE FOLLOWER PULSE RESPONSE
4 3 2
-
1
O
0 3
2
-V
IN
V
1
Input Voltage - V Output Voltage - V
0 20406080
t - Time - s
RL 2 k
+
= 15 V
V
1 M
4
Page 5
SLEW RATE
0.3
µ
0.2
0.1
SR - Slew Rate - V/ s
V± = ±15 V
O
= ±10 V
V
0
–50
T
A
- Operating Ambient Temperature - ˚C
0 50 100
OUTPUT SINK CURRENT LIMIT
100
50 30
20 10
5 3
2 1
0.5
- Output Voltage - V
O
0.3
V
0.2
0.1
0.05
0.03
0.02
0.01
0.01 0.030.05 0.1 0.3 0.5 1 2 5 10 1005030203
SR
SR
+
V+/2
– +
+
V
V+ = +15 V
I
O SINK
V
O
µ
PC358
5
+
V
= +15 V
4
+
- V
+
/2
V
3
2
- Output Voltage to V
O
V
1
0
0.01
0.03 0.05 0.1 0.5 1 2 5 10 20 10050300.3 3
O SINK
- Output Sink Current - mA
I
OUTPUT SOURCE CURRENT LIMIT
+
V
V
+ –
O
I
O SOURCE
I
O SOURSE
- Output Source Current - mA
5
Page 6
PACKAGE DRAWINGS
8 PIN PLASTIC DIP (300 mil)
85
14
µ
PC358
A
I
P
J
H
G
C
B
F
DN
NOTES
1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition.
2) ltem "K" to center of leads when formed parallel.
M
K
L
M
ITEM MILLIMETERS INCHES
A 10.16 MAX. 0.400 MAX. B 1.27 MAX. 0.050 MAX. C 2.54 (T.P.) 0.100 (T.P.)
D 0.50±0.10 0.020 F 1.4 MIN. 0.055 MIN.
G 3.2±0.3 0.126±0.012 H 0.51 MIN. 0.020 MIN.
I 4.31 MAX. 0.170 MAX.
J 5.08 MAX. 0.200 MAX.
K 7.62 (T.P.) 0.300 (T.P.)
L 6.4 0.252
M 0.25 0.010 N 0.25
P 0.9 MIN. R 0~15° 0~15°
+0.10 –0.05
R
+0.004 –0.005
+0.004 –0.003
0.01
0.035 MIN.
P8C-100-300B,C-1
6
Page 7
8 PIN PLASTIC SOP (225 mil)
85
detail of lead end
P
µ
PC358
1
4
A
G
F
K
E
B
C
D
NOTE
Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.
M
M
H
I
L
ITEM MILLIMETERS INCHES
A B C
D 0.40 E
F G H
I
J K 0.15
L 0.6±0.2 0.024
M N
P3° 3°
5.37 MAX.
0.78 MAX.
1.27 (T.P.) +0.10
–0.05
0.1±0.1
1.8 MAX.
1.49
6.5±0.3
4.4
1.1 +0.10
–0.05
0.12
0.10
+7° –3°
J
N
0.212 MAX.
0.031 MAX.
0.050 (T.P.) +0.004
0.016
–0.003
0.004±0.004
0.071 MAX.
0.059
0.256±0.012
0.173
0.043 +0.004
0.006
–0.002 +0.008
–0.009
0.005
0.004
+7° –3°
S8GM-50-225B-4
7
Page 8
9 PIN PLASTIC SLIM SIP
µ
PC358
A
M
19
C
F G
M
J
Q
K
Y
H
N
Z
NOTE
Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition.
ITEM MILLIMETERS INCHES
22.86 MAX.
A
1.1 MIN.
C
0.5±0.1
F G
0.25
H
2.54
J
1.27 MAX.
K
0.51 MIN.
M
5.08 MAX.
N
2.8±0.2
Q
5.75 MAX.
U
1.5 MAX.
V
0.25
3.2±0.5
Y
1.1 MIN.Z 0.043 MIN.
V
U
+0.10 –0.05
0.900 MAX.
0.043 MIN. +0.004
0.02
–0.005
0.010
0.100
0.050 MAX.
0.020 MIN.
0.200 MAX. +0.009
0.11
–0.008
0.227 MAX.
0.059 MAX. +0.004
0.01
–0.003
0.126±0.02
P9HA-254B-1
8
Page 9
µ
PC358
RECOMMENDED SOLDERING CONDITIONS
When soldering these products, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
(C10535E).
Type of Surface Mount Device
µ
PC358G2: 8-pin plastic SOP (225 mil)
Process Conditions Symbol
Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature), IR30-00-1
Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time.
Vapor phase soldering Peak temperature: 215 °C or below (Package surface temperature), VP15-00-1
Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time.
Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1
Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature).
Partial heating method Pin temperature: 300 °C or below,
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the
device will be damaged by heat stress.
Types of Through-hole Device
µ
PC358C: 8-pin plastic DIP (300 mil)
µ
PC358HA: 9-pin slim SIP
Process Conditions
Wave soldering Solder temperature: 260 °C or below, (only to leads) Flow time: 10 seconds or less.
Partial heating method Pin temperature: 300 °C or below,
Heat time: 3 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure
that the package body does not get jet soldered.
9
Page 10
REFERENCE DOCUMENTS
QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E IC PACKAGE MANUAL C10943X GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212 QUALITY CONTROL SYSTEM - STANDARD LINEAR IC
µ
PC358
10
Page 11
[MEMO]
µ
PC358
11
Page 12
µ
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
PC358
M4 96.5
2
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