Datasheet UPC324C Specification

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µ

LOW POWER QUAD OPERATIONAL AMPLIFIER

PC324

DESCRIPTION

The µPC324 is a quad operational amplifier which is

designed to operate from a single power supply over a

wide range of voltages. Operation from split power

supplies is also possible and the power supply current

drain is very low. Further advantage, the input common-

mode voltage can also swing to ground in the linear

mode.

FEATURES

• Internal frequency compensation

• Wide output voltage swing V

• Common Mode input voltage range includes V

• Wide supply range

3 V to 30 V (Single)

±1.5 V to ±15 V (Split)

• Output short circuit protection

–

to V+–1.5 V

EQUIVALENT CIRCUIT (1/4 Circuit) PIN CONFIGURATION (Top View)

µ

µ

100 A

6 A 6 A

Q

2

Q

1

I

I

I

N

Q

8

µµ

Q

3

C

C

Q

4

Q

10

Q

9

Q

5

Q

7

Q

11

Q

12

µ

50 A

+

V

OUT1

Q

6

R

SC

OUTPUT

Q

13

–

V

OUT2

PC324C, 324G2

1

I

2

I1

3

I

N1

+

4

V

5

I

N2

6

I

I2

7

14

– +

+ –

– +

+ –

23

14

13

12

11

10

9

8

OUT4

I

I4

I

N4

–

V

I

N3

I

I3

OUT3

–

ORDERING INFORMATION

Part Number Package

µ

PC324C 14-pin plastic DIP (7.62 mm (300))

µ

PC324G2 14-pin plastic SOP (5.72 mm (225))

µ

PC324G2(5) 14-pin plastic SOP (5.72 mm (225))

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. G11763EJ4V0DS00 (4th edition)
Date Published March 2004 N (CP)K
Printed in Japan

The mark shows major revised points.

c

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter Symbol Ratings Unit

Voltage between V+ and V

Differential Input Voltage VID ±32 V

Input Voltage Note 2 VI V––0.3 to V–+32 V

Output Voltage Note 3 VO V––0.3 to V++0.3 V

Power Dissipation C Package Note 4 PT 570 mW

Output Short Circuit Duration Note 6 Indefinite sec

Operating Ambient Temperature TA –20 to +80 °C

Storage Temperature Tstg –55 to + 125 °C

–

G2 Package Note 5 550 mW

Note 1 V+–V

Notes 1. Reverse connection of supply voltage can cause destruction.

2. The input voltage should be allowed to input without damage or destruction independent of the

magnitude of V

+

. Either input signal should not be allowed to go negative by more than 0.3 V. The normal
operation will establish when the both inputs are within the Common Mode Input Voltage Range of
electrical characteristics.

3. This specification is the voltage which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc.,
this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing
of electrical characteristics.

4. Thermal derating factor is –7.6 mW/°C when operating ambient temperature is higher than 50 °C.

5. Thermal derating factor is –5.5 mW/°C when operating ambient temperature is higher than 25 °C.

6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note

4 and Note 5.

–

–0.3 to +32 V

µ

PC324

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN. TYP. MAX. Unit

Supply Voltage (Split) V

Supply Voltage (V– = GND) V

µ

PC324C, µPC324G2

±

+

±1.5 ±15 V

330V

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = 5 V, V– = GND)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Input Offset Voltage VIO RS = 0 Ω±2 ±7mV

Input Offset Current IIO ±5 ± 50 nA

Input Bias Current Note 7 IB 45 250 nA

Large Single Voltage Gain AV RL ≥ 2 kΩ 25 100 V/mV

Supply Current Note 8 ICC RL = ∞, IO = 0 A 1.0 2 mA

Common Mode Rejection Ratio

Supply Voltage Rejection Ratio SVR 65 100 dB

Output Voltage Swing VO RL = 2 kΩ (Connect to GND) 0 V+ – 1.5 V

Common Mode Input Voltage Range

Output Current (SOURCE) IO SOURCE

Output Current (SINK) IO SINK

Channel Separation f = 1 kHz to 20 kHz 120 dB

CMR 65 85 dB

VICM 0V

VIN + = +1 V, VIN– = 0 V

VIN – = +1 V, VIN+ = 0 V

VIN– = +1 V, VIN+ = 0 V,

VO = 200 mV 12 50

20 40 mA

10 20 mA

+

– 1.5 V

µ

A

Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input

stage.

8. This current flows irrespective of the existence of use.

2

Data Sheet G11763EJ4V0DS

µ

PC324

µ

PC324G2(5)

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = 5 V, V– = GND)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Input Offset Voltage VIO RS = 0 Ω±2 ±3mV

Input Offset Current IIO ±5 ± 50 nA

Input Bias Current Note 7 IB 45 60 nA

Large Single Voltage Gain AV RL ≥ 2 kΩ 50 100 V/mV

Supply Current Note 8 ICC RL = ∞, IO = 0 A 1.0 1.5 mA

Common Mode Rejection Ratio

Supply Voltage Rejection Ratio SVR 65 100 dB

Output Voltage Swing VO RL = 2 kΩ (Connect to GND) 0 V+ – 1.5 V

Common Mode Input Voltage Range

Output Current (SOURCE) IO SOURCE

Output Current (SINK) IO SINK

Channel Separation f = 1 kHz to 20 kHz 120 dB

Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input

stage.

8. This current flows irrespective of the existence of use.

CMR 65 85 dB

VICM 0V

VIN + = +1 V, VIN– = 0 V

VIN – = +1 V, VIN+ = 0 V

VIN– = +1 V, VIN+ = 0 V,

VO = 200 mV 30 50

30 40 mA

15 20 mA

+

– 1.4 V

µ

A

Data Sheet G11763EJ4V0DS

3

TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.)

µ

PC324

1000

POWER DISSIPATION

4

SUPPLY CURRENT

+

V

A

ICC

800

3

–

324C

600

324G2

2

+

400

T

A = 0 to 70 °C

ICC - Supply Current - mA

200

PT - Total Power Dissipation - mW

1

TA = –20 °C

0 20406080100 0 10 20 30 40

A - Operating Ambient Temperature - °C

T

INPUT OFFSET VOLTAGE

3

V+ - Supply Voltage - V (V– = GND)

INPUT OFFSET VOLTAGE

5

4

+

V

= 5 V

each 5 samples data

3

2

TA = 25 °C

1

VIO - Input Offset Voltage - mV

0

0 40 100–50

V+ - Supply Voltage - V (V– = GND)

INPUT BIAS CURRENT

100

75

50

TA = +25 °C

IB - Input Bias Current - nA

25

2

1

0

–1

–2

VIO - Input Offset Voltage - mV

–3

–4

A - Operating Ambient Temperature - °C

T

010 20 30 50

INPUT BIAS CURRENT

100

80

60

40

IB - Input Bias Current - nA

20

+

V

= +15 V

–

= GND

V

0 10203040

V+ - Supply Voltage - V (V– = GND)

4

Data Sheet G11763EJ4V0DS

–50 0 50 100

A - Operating Ambient Temperature - °C

T

0

µ

PC324

OUTPUT SINK CURRENT LIMIT

10

V+ = 15 V

1.0

+

V

0.1

- Output Voltage - V

O

V

V+/2

–

+

0.01

0.01 0.1 1.0 10 100

I

O SINK

- Output Sink Current - mA

OUTPUT SHORT CIRCUIT CURRENT

70

–

60

+

50

40

- Output Short Circuit Current - mA

O SHORT

I

30

–20 6020 80

040

T

A

- Operating Ambient Temperature - °C

IO

SINK

V

O SHORT

I

OUTPUT SOURCE CURRENT LIMIT

5

+

V

V+/2

+

- V

4

+

–

IO

∆V

SOURCE

O

3

2

- Output Voltage to V

O

∆V

O

1

0

0.01 0.1 1.0 10 100

I

O SOURCE

- Output Source Current - mA

OPEN LOOP FREQUENCY RESPONSE

140

10 MΩ

120

100

80

V

IN

0.1 F

µ

V+/2

+

V

–

+

V

O

60

V+ = 30 V

40

- Open Loop Voltage Grain - dB

V

A

20

0

1 10 100 1 k 10 k 100 k 1 M 10 M

V+ = 10 to 15 V

f - Frequency - Hz

OPEN LOOP VOLTAGE GAIN

160

RL = 20 kΩ

120

RL = 2 kΩ

80

- Open Voltage Gain - dB

40

V

A

0 10203040

V+ - Supply Voltage - V (V– = GND)

Data Sheet G11763EJ4V0DS

LARGE SIGNAL FREQUENCY RESPONSE

20

100 kΩ

7 V

+15 V

–

+

p-p

15

1 kΩ

V

IN

10

5

- Output Voltage Swing - V

om

V

0

1 k 3 5 10 k 30 50 100 k 300 500 1 M

f - Frequency - Hz

V

O

2 kΩ

5

µ

PC324

COMMON MODE REJECTION RATIO

120

100

80

60

40

20

CMR - Common Mode Rejection Ratio - dB

0
100 1 k 10 k 100 k 1 M

f - Frequency - Hz

SLEW RATE

0.3

µ

SR

SR

VOLTAGE FOLLOWER PULSE RESPONSE

4

3

RL ≥ 2 kΩ

+

V

= 15 V

2

Output

Voltage - V

1

0

3

2

Input

Voltage - V

1

0 20406080

Time - s

µ

–

+

0.2

SR - Slew Rate - V/ s

0.1

±

V

= ±15 V

V

O

= ±10 V

0
–50 0 50 100

T

A

- Operating Ambient Temperature - °C

6

Data Sheet G11763EJ4V0DS

PACKAGE DRAWINGS

14-PIN PLASTIC DIP (7.62 mm (300))

14 8

17

µ

PC324

A

J

I

H

C

G

F

DN

NOTES

1. Each lead centerline is located within 0.25 mm of
its true position (T.P.) at maximum material condition.

2. ltem "K" to center of leads when formed parallel.

M

K

L

B

M

R

ITEM MILLIMETERS

19.22±0.2

A

B

2.14 MAX.

C

2.54 (T.P.)

D

0.50±0.10

F

1.32±0.12

G

3.6±0.3

H 0.51 MIN.

3.55

I

J

4.3±0.2
K 7.62 (T.P.)

L 6.4± 0.2

M 0.25

N 0.25

R

+0.10

−0.05

0~15°

P14C-100-300B1-3

Data Sheet G11763EJ4V0DS

7

14-PIN PLASTIC SOP (5.72 mm (225))

14 8

detail of lead end

P

µ

PC324

1

A

F

G

C

D

M

M

B

E

NOTE

Each lead centerline is located within 0.1 mm of
its true position (T.P.) at maximum material condition.

7

H

I

J

S

L

NS

K

ITEM

MILLIMETERS

A

10.2±0.26

B

1.42 MAX.

C

1.27 (T.P.)

D

E

F

G

H

I

J

K

L

M

N

P

S14GM-50-225B, C-6

+0.08

0.42

−0.07

0.1±0.1

+0.21

1.59

−0.2

1.49

6.5±0.2

4.4±0.1

1.1±0.16

+0.08

0.17

−0.07

0.6±0.2

0.1

0.10

+7°

3°

−3°

8

Data Sheet G11763EJ4V0DS

µ

PC324

RECOMMENDED SOLDERING CONDITIONS

The µPC324 should be soldered and mounted under the following recommended conditions.

For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales

representative.

For technical information, see the following website.

Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)

Surface mount device

µ

PC324G2: 14-pin plastic SOP (5.72 mm (225))

Process Conditions Symbol

Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature), IR30-00-1

Reflow time: 30 seconds or less (at 210 °C or higher),

Maximum number of reflow processes: 1 time.

Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), VP15-00-1

Reflow time: 40 seconds or less (at 200 °C or higher),

Maximum number of reflow processes: 1 time.

Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1

Maximum number of flow processes: 1 time,

Pre-heating temperature: 120 °C or below (Package surface temperature).

Partial heating method Pin temperature: 300 °C or below, –

Heat time: 3 seconds or less (Per each side of the device).

Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or

the device will be damaged by heat stress.

Through-hole device

µ

PC324C: 14-pin plastic DIP (7.62 mm (300))

Process Conditions

Wave soldering Solder temperature: 260 °C or below,

(only to leads) Flow time: 10 seconds or less.

Partial heating method Pin temperature: 300 °C or below,

Heat time: 3 seconds or less (per each lead.)

Caution For through-hole device, the wave soldering process must be applied only to leads, and make

sure that the package body does not get jet soldered.

Data Sheet G11763EJ4V0DS

9

REFERENCE DOCUMENTS

QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E

SEMICONDUCTOR DEVICE MOUNT MANUAL http://www.necel.com/pkg/en/mount/index.html

NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212

QUALITY CONTROL SYSTEM - STANDARD LINEAR IC

µ

PC324

10

Data Sheet G11763EJ4V0DS

µ

PC324

•

The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

•

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.

•

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Descriptions of circuits, software and other related information in this document are provided for illustrative

•

purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 02. 11-1