Page 1
(E)
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1476
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1476 is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
• Surge Absorber (Zener Diode) built in.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1476H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 100 ±15 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO 100 ±15 V
EBO 8V
C(DC) ±2 A/unit
C(pulse)* ±3 A/unit
B(DC) 0.2 A/unit
T1** 3.5 W
T2*** 28 W
J 150 ˚C
stg –55 to +150 ˚C
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
1 R2
R
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
.
1 = 10 kΩ
.
.
2 = 900 Ω
.
: Base (B)
: Collector (C)
: Emitter (E)
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
MIN.
1.4
0.5 ±0.1
10
* PW ≤ 300
µ
s, Duty Cycle ≤ 10 %
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3565
Date Published November 1994 P
Printed in Japan
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
y Cy
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 1.0
µ
A VCB = 75 V, IE = 0
Emitter Leakage Current IEBO 1.0 mA VEB = 5 V, IC = 0
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 1.2
Fall Time tf 0.4
*
2000 20000 — VCE = 2 V, IC = 1 A
*
500 — VCE = 2 V, IC = 2 A
*
*
1.5 V I C = 1 A, IB = 1 mA
2 V IC = 1 A, IB = 1 mA
µ
s
IC = 1 A
µ
µ
IB1 = –IB2 = 2 mA
s
s
.
VCC = 50 V, RL = 50 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
.
L
= 50 Ω
R
.
V
CC
Base Current
Wave Form
.
= 50 V
.
Collector
Current
Wave Form
90 %
10 %
on
t
t
stgtf
V
IN
PW
.
.
µ
cle ≤ 2 %
PW = 50 s
Dut
V
I
B1
I
B2
.
BB
= –5 V
.
I
C
T.U.T.
µ
PA1476
.
.
B1
I
I
B2
I
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA1476
DERATING CURVE OF SAFE
OPERATING AREA
100
80
60
S/b Limited
Dissipation Limited
40
20
dT - Percentage of Rated Current - %
0
50 100 150
C
- Case Temperature - ˚C
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NEC
PA1476
µ
4
3
2
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
SAFE OPERATING AREA
10
C (pulse)
I
C (DC)
I
1
- Collector Current - A
C
I
C
= 25 ˚C
T
Single Pulse
0.1
1
CE
- Collector to Emitter Voltage - V
V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
20
10
Dissipation
Limited
S/b Limited
10 100
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
PW = 100 s
200 s
µ
1 ms
10 ms
µ
- Total Power Dissipation - W
T
P
1
25 50 75 100 125 150
0
a
- Ambient Temperature - ˚C
T
DC CURRENT GAIN vs. COLLECTOR CURRENT
10000
1000
- DC Current Gain
100
FE
h
= 150 ˚C
a
T
75 ˚C
25 ˚C
–25 ˚C
10
0.01
0.1 1 10
I
C
- Collector Current - A
VCE = 2.0 V
- Total Power Dissipation - W
T
P
25 50 75 100 125 150
0
C
- Case Temperature - ˚C
T
COLLECTOR SATURATION VOLTAGE
vs. COLLECTOR CURRENT
10
Ta = –25 ˚C
1
125 ˚C
75 ˚C
- Collector Saturation Voltage - V
CE (sat)
V
25 ˚C
0.1
0.1
I
C
- Collector Current - A
IC/IB = 1000
1 –10
3
Page 4
µ
PA1476
- Transient Thermal Resistance - ˚C/W
th (j-c)
R
100
10
0.1
2.0
1.6
1.2
TRANSIENT THERMAL RESISTANCE
1
0.1
1 10 100
PW - Pulse Width - ms
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
µ
180 A
200 A
µ
220 A
µ
µ
160 A
µ
140 A
µ
120 A
µ
100 A
CE
V
≤ 10 V
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
Ta = –25 ˚C
1
75 ˚C
125 ˚C
- Base Saturation Voltage - V
BE (sat)
V
0.1
0.1
I
C
- Collector Current - A
SWITCHING CHARACTERISTICS
100
µ
µ
10
t
µ
on
25 ˚C
IC/IB = 1000
110
I
C
/IB = 500
0.8
- Collector Current - A
C
I
0.4
0
1.0 2.0 3.0 4.0 5.0
CE
- Collector to Emitter Voltage - V
V
µ
IB = 80 A
1
- storage Time - s
- Turn On Time - s
- Fall Time - s
on
stg
f
t
t
t
0.1
0.1
t
stg
t
f
110
C
- Collector Current - A
I
4
Page 5
µ
PA1476
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
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[MEMO]
µ
PA1476
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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