Page 1
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
• Surge Absorber (C - B) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1458H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 60 ±10 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Surge Sustaining Energy E
Collector Current (DC) I
Collector Current (pulse) I
Collector Current I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO 60 ±10 V
EBO 7V
CEO(sus) 25 mJ/unit
C(DC) ±5 A/unit
C(pulse)* ±10 A/unit
CBS(DC) 5 mA/unit
B(DC) 0.5 A/unit
T1** 3.5 W
T2*** 28 W
j 150 ˚C
stg –55 to +150 ˚C
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
R
1 R2
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
(E)
: Base (B)
: Collector (C)
: Emitter (E)
.
1 = 3.0 kΩ
.
.
2 = 300 Ω
.
10 MIN.
1.4
0.5 ±0.1
10
* PW ≤ 300
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
µ
s, Duty Cycle ≤ 10 %
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
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ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICES 10
Emitter Leakage Current IEBO 10 mA V EB = 5 V, IC = 0
Collector to Emitter VCEO(sus) 50 60 70 V IC = 3 A, L = 1 mH
Sustaining Voltage
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 7
Fall Time tf 2
*
2000 7000 20000 — VCE = 2 V, IC = 2 A
*
500 3000 — VCE = 2 V, IC = 4 A
*
*
0.9 1.5 V IC = 2 A, IB = 2 mA
1.6 2 V IC = 2 A, IB = 2 mA
µ
A VCE = 40 V
µ
s
C = 2 A
I
µ
µ
IB1 = –IB2 = 2 mA
s
s
.
VCC = 40 V, RL = 20 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1458
.
.
VIN
PW
.
PW = 50 s
Duty Cycle ≤ 2 %
µ
.
B1
I
IB2
.
VBB = –5 V
.
.
RL = 20 Ω
.
IC
T.U.T.
.
VCC = 40 V
.
Base Current
Wave Form
Collector
Current
Wave Form
90 %
10 %
ton tstg tf
I
IB2
B1
IC
2
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TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
10
µ
SAFE OPERATING AREA
PA1458
PW = 300 s
100
80
60
S/b Limited
Dissipation Limited
40
20
dT - Percentage of Rated Current - %
0
50 100 150
C - Case Temperature - ˚C
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NEC
PA1458
µ
4
3
2
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
5
Limited
2
1
0.5
IC - Collector Current - A
0.2
Single Pulse
0.1
1
CE - Collector to Emitter Voltage - V
V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
20
10
Dissipation
µ
1 ms
3 ms
10 ms
S/b Limited
50 ms
5 10 50 100
20
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
VCEO TYP.
PT - Total Power Dissipation - W
1
25 50 75 100 125 150
0
a - Ambient Temperature - ˚C
T
DC CURRENT GAIN vs. COLLECTOR CURRENT
100000
10000
= 125 ˚C
1000
75 ˚C
a
T
25 ˚C
–25 ˚C
hFE - DC Current Gain
100
10
0.01
0.1 1 10
IC - Collector Current - A
V
CE = 2.0 V
Pulse Test
PT - Total Power Dissipation - W
25 50 75 100 125 150
0
C - Case Temperature - ˚C
T
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
1
VCE (sat) - Collector Saturation Voltage - V
0.1
0.1
I
C - Collector Current - A
IC = 1000·IB
Pulse Test
Ta = –25 ˚C
75 ˚C
25 ˚C
125 ˚C
110
3
Page 4
100
g
10
V
CE ≤ 10 V
10
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENTTRANSIENT THERMAL RESISTANCE
IC = 1000·IB
Pulse Test
µ
PA1458
1.0
Rth (j-c) - Transient Thermal Resistance - ˚C/W
0.1
0.1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
5
4
3
2
IC - Collector Current - A
1
1
VBE (sat) - Base Saturation Voltage - V
0.1
1 10 100 1 10
PW - Pulse Width - ms
1.4
2.0
1.0
0.8
0.6
= 0.2 mA
B
I
0.4
0.1
C - Collector Current - A
I
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
0
12345
CE - Collector to Emitter Volta
V
e - V
4
Page 5
µ
PA1458
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
5
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[MEMO]
µ
PA1458
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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