Page 1
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
PA1434
DESCRIPTION
The µPA1434 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE. Low VCE(sat).
FE = 800 to 3200 (at IC = 0.5 A)
h
CE(sat) = 0.5 V MAX. (at IC = 2 A)
V
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1434H 10 Pin SIP Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
a = 25 ˚C)
(T
Total Power Dissipation P
(T
c = 25 ˚C)
Junction Temperature T
Storage Temperature T
* PW ≤ 300
** 4 Circuits
µ
s, Duty Cycle ≤ 10 %
CEO 60 V
EBO 7V
C(DC) 3 A/unit
C(pulse)* 6 A/unit
B(DC) 0.6 A/unit
T1** 3.5 W
T2** 28 W
j 150 ˚C
stg –55 to +150 ˚C
10
2.5
1.410.6 ±0.1
2
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
2.54
2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
4
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
7
6
4.0
10 MIN.
1.4
0.5 ±0.1
9
8
101
Document No. IC-3480
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
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ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 10
Emitter Leakage Current IEBO 10
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 3
Fall Time tf 1.5
*
800 3200 — VCE = 5 V, IC = 0.5 A
*
500 — VCE = 5 V, IC = 3 A
*
*
0.5 V IC = 2 A, IB = 20 mA
1.2 V IC = 2 A, IB = 20 mA
µ
A VCB = 60 V, IE = 0
µ
A VEB = 5 V, IC = 0
µ
µ
µ
IC = 2 A
s
IB1 = –IB2 = 10 mA
s
s
.
VCC = 50 V, RL = 25 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % /pulsed
SWITCHING TIME TEST CIRCUIT
RL = 25 Ω
Base Current
Wave Form
Collector Current
Wave Form
ton
90 %
10 %
t
stg tf
VIN
PW
PW = 50 s
Duty Cycle ≤ 2 %
µ
IB1
I
B2
VBB = –5 V
IC
T.U.T.
VCC = 50 V
IB1
IB2
µ
PA1434
.
.
IC
2
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TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
100
80
60
S/b Limited
Dissipation Limited
0.5
µ
PA1434
SAFE OPERATING AREA
10
I
C(pulse)
5
MAX.
I
C(DC)
MAX.
Dissipation
Limited
1
PW = 30 s
100 s
µ
300 s
µ
1 ms
10
50 ms
S/b Limited
µ
40
0.1
- Collector Current - A
C
I
0.05
20
dT - Percentage of Rated Current - %
0 50 100 150 10 50 100
TC - Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TC = 25 ˚C
Single Pulse
0.01
15
CE
- Collector to Emitter Voltage - V
V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
NEC
µ
PA1434H
4
3
2
- Total Power Dissipation - W
T
P
1
0
25 50 75 100 125 150
a
- Ambient Temperature - ˚C
T
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
20
10
- Total Power Dissipation - W
T
P
0
25 50 75 100 125 150
TC - Case Temperature - ˚C
4 Circuits
Operation
3 Circuits
Operation
2 Circuits
Operation
1 Circuit
Operation
MAX.
CEO
V
100
TRANSIENT THERMAL RESISTANCE
VCE ≤ 10 V
10
1
- Transient Thermal Resistance - ˚C/W
th(j-c)
R
0.1
0.1 1
PW - Pulse Width - ms
10 100
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
5
50
4
20
3
10
2
- Collector Current - A
C
I
1
= 0.5 mA
B
I
5
2
1
0 12345
CE
- Collector to Emitter Voltage - V
V
3
Page 4
DC CURRENT GAIN vs. COLLECTOR CURRENT
10000
5000
2000
1000
hFE - DC Current Gain
500
200
100
0.001 0.005
–25 ˚C
VCE = 5 V
Pulsed
= 125 ˚C
a
T
75 ˚C
25 ˚C
0.01 0.05 0.1 0.5 1 5 10
IC - Collector Current - A
BASE AND COLLECTOR SATURATION
10
0.5
0.2
0.1
0.05
BE(sat) - Base Saturation Voltage - V
V
VCE(sat) - Collector Saturation Voltage - V
0.02
0.01
VOLTAGE vs.COLLECTOR CURRENT
5
2
1
0.001 0.005
BE(sat)
V
CE(sat)
V
0.01 0.05 0.1 0.5 1 5 10
I
C - Collector Current - A
µ
IC = 100·IB
Pulsed
PA1434
4
Page 5
µ
PA1434
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
5
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[MEMO]
µ
PA1434
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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