
Philips Semiconductors Objective specification
Gigabit Ethernet/Fibre Channel transimpedance amplifier TZA3043
FEATURES
• Wide dynamic range, typically 2.5 µA to 1.5 mA
• Differential transimpedance of 14 kΩ
• Wide bandwidth of 950 MHz
• Differential outputs
• On-chip AGC (Automatic Gain Control)
• No external components required
• Single supply voltage from 3.0 to 5.5 V
• Bias voltage for PIN diode
• Pin compatible with TZA3023 and SA5223.
APPLICATIONS
• Digital fibre optic receiver in medium and long haul
optical telecommunications transmission systems or in
high speed data networks
• Wideband RF gain block.
DESCRIPTION
The TZA3043 is a high speed transimpedance amplifier
with AGC designed to be used in Gigabit Ethernet/Fibre
Channel optical links. It amplifies the current generated by
a photo detector (PIN diode or avalanche photodiode) and
converts it to a differential output voltage.
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TZA3043T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TZA3043U naked die die in waffle pack carriers; die dimensions 0.960 × 1.210 mm −
BLOCK DIAGRAM
handbook, full pagewidth
V
CC
1 nF
1 (1)
DREF
3 (4)IPhoto
(1) AGC analog I/O is only available on the TZA3043U (pad 13).
The numbers in brackets refer to the pad numbers of the naked die version.
2 kΩ
10 pF
3
GND
GAIN
CONTROL
A1
low noise
TZA3043
2, 4, 5 (2, 3, 5, 6, 7, 8)
Fig.1 Block diagram.
(1)
AGC
peak detector
A2
amplifier single-ended to
differential converter
BIASING
V
CC
8 (11, 12)(13)
(10) 7 OUTQ
(9) 6 OUT
MGR286
1998 Jul 08 2

Philips Semiconductors Objective specification
Gigabit Ethernet/Fibre Channel transimpedance amplifier TZA3043
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
CC
V
n
I
n
P
tot
T
stg
T
j
T
amb
supply voltage −0.5 +5.5 V
DC voltage
pin 3/pad 4: IPhoto −0.5 +1 V
pins 6 and 7/pads 9 and 10: OUT and OUTQ −0.5 V
pad 13: AGC (TZA3043U only) −0.5 V
pin 1/pad 1: DREF −0.5 V
+ 0.5 V
CC
+ 0.5 V
CC
+ 0.5 V
CC
DC current
pin 3/pad 4: IPhoto −2.5 +2.5 mA
pins 6 and 7/pads 9 and 10: OUT and OUTQ −15 +15 mA
pad 13: AGC (TZA3043U only) −0.2 +0.2 mA
pin 1/pad 1: DREF −2.5 +2.5 mA
total power dissipation − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −40 +85 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th(j-s)
th(j-a)
thermal resistance from junction to solder point tbf K/W
thermal resistance from junction to ambient tbf K/W
CHARACTERISTICS
For typical values T
=25°C and VCC= 5 V; minimum and maximum values are valid over the entire ambient
amb
temperature range and process spread.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
I
CC
P
tot
T
j
T
amb
R
tr
f
−3dB(h)
supply voltage 3 5 5.5 V
supply current AC coupled; RL=50Ω− 35 62 mA
total power dissipation VCC=5V − 175 341 mW
V
= 3.3 V − 112 212 mW
CC
junction temperature −40 − +110 °C
ambient temperature −40 +25 +85 °C
small-signal
transresistance of the
receiver
high frequency −3dB
point
measured differentially;
AC coupled
R
= ∞−29 − kΩ
L
R
=50Ω−14.5 − kΩ
L
VCC=5V; Ci= 0.7 pF − 920 − MHz
V
= 3.3 V; Ci= 0.7 pF − 800 − MHz
CC
1998 Jul 08 7

Philips Semiconductors Objective specification
Gigabit Ethernet/Fibre Channel transimpedance amplifier TZA3043
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
n(tot)
∆R
/∆t AGC loop constant − 1 − dB/ms
tr
PSRR power supply rejection
Input: IPhoto
V
bias(IPhoto)
I
i(IPhoto)(p-p)
total integrated RMS
noise current over
bandwidth
ratio
input bias voltage on
pin IPhoto
input current on
pin IPhoto (peak-to-peak
value)
referred to input;
− 200 − nA
∆f = 920 MHz; note 1
measured differentially;
note 2
f = 1 to 100 MHz − 2 −µA/V
f = 1 GHz − 66 −µA/V
650 822 970 mV
VCC=5V −2000 +4 +2000 µA
V
= 3.3 V −1000 +4 +1000 µA
CC
Data outputs: OUT and OUTQ
V
O(CM)
common mode output
AC coupled; RL=50Ω VCC− 1.800 VCC− 1.700 VCC− 1.600 V
voltage
V
o(se)(p-p)
single-ended output
AC coupled; RL=50Ω 150 200 260 mV
voltage (peak-to-peak
value)
V
OO
differential output offset
−30 − +30 mV
voltage
R
o
t
r
t
f
output resistance single-ended; DC tested 42 50 58 Ω
rise time 20% to 80% − 200 tbf ps
fall time 80% to 20% − 200 tbf ps
Notes
1. All I
measurements were made with an input capacitance of Ci= 1 pF. This was comprised of 0.5 pF for the
n(tot)
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
2. PSRR is defined as the ratio of the equivalent current change at the input (∆I
∆I
IPhoto
PSRR
For example, a disturbance of +10 mV on V
=
--------------------
∆V
CC
at 10 MHz will typically add an extra 20 nA to the photodiode current.
CC
) to a change in supply voltage:
IPhoto
The external capacitor between pin DREF and pin GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
1998 Jul 08 8

Philips Semiconductors Objective specification
Gigabit Ethernet/Fibre Channel transimpedance amplifier TZA3043
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
1998 Jul 08 11

Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 425102/1200/01/pp16 Date of release: 1998 Jul 08 Document order number: 9397 750 03879