Datasheet TZA3041U, TZA3041BHL, TZA3041AHL Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TZA3041AHL; TZA3041BHL;
TZA3041U

Gigabit Ethernet/Fibre Channel
laser drivers

Preliminary specification
Supersedes data of 1998 Aug 24
File under Integrated Circuits, IC19

1999 Aug 24

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

FEATURES

• 1.2 Gbits/s data input, both Current-Mode Logic (CML)
and PositiveEmitter Coupled Logic (PECL) compatible;
maximum 800 mV (p-p)

• Adaptive laser output control with dual loop, stabilizing
optical ONE and ZERO levels

• Optionalexternalcontroloflasermodulationandbiasing
currents (non-adaptive)

• Automatic laser shutdown

• Few external components required

• Rise and fall times of 120 ps (typical value)

• Jitter <50 mUI (p-p)

• RF output current sinking capability of 60 mA

• Bias current sinking capability of 90 mA

• Power dissipation of 430 mW (typical value)

• Low cost LQFP32 plastic package

• Single 5 V power supply.

TZA3041AHL; TZA3041BHL;

TZA3041U

APPLICATIONS

• Gigabit Ethernet/Fibre Channel optical transmission
systems

• Gigabit Ethernet/Fibre Channel optical laser modules.

GENERAL DESCRIPTION

The TZA3041AHL, TZA3041BHL and TZA3041U are fully
integrated laser drivers for Gigabit Ethernet/Fibre Channel
(1.2 Gbits/s) systems, incorporating the RF path between
the data multiplexer and the laser diode. Since the dual
loop bias and modulation control circuits are integrated on
the IC, the external component count is low. Only
decoupling capacitors and adjustment resistors are
required.

TheTZA3041AHL features an alarm function for signalling
extreme bias current conditions. The alarm low and high
threshold levels can be adjusted to suit the application
using only a resistor or a current Digital-to-Analog
Converter (DAC).

TZA3041AHL

• Laser alarm output for signalling extremely low and high
bias current conditions.

TZA3041BHL

• Extra 1.2 Gbits/s loop mode input; both CML and PECL
compatible.

TZA3041U

• Bare die version with combined bias alarm and loop
mode functionality.

ORDERING INFORMATION

TYPE

NUMBER

TZA3041AHL LQFP32 plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm SOT401-1
TZA3041BHL
TZA3041U − bare die; 2000 × 2000 × 380 µm −

NAME DESCRIPTION VERSION

The TZA3041BHL is provided with an additional RF data
input to facilitate remote (loop mode) system testing.

The TZA3041U is a bare die version for use in compact
laser module designs. The die contains 40 pads and
features the combined functionality of the TZA3041AHL
and the TZA3041BHL.

PACKAGE

1999 Aug 24 2

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

BLOCK DIAGRAMS

handbook, full pagewidth

28

DIN

DINQ

29

V

CC(R)

19, 20
27, 30

TZA3041AHL; TZA3041BHL;

ALARM

26

data input

(differential)

TONE

4

ALARMLO

TZA3041AHL

31

10

7

411

V

CC(G)

V

CC(B)

ALS

ALARMHITZERO

215

LASER

CONTROL

BLOCK

CURRENT

SWITCH

BAND GAP

REFERENCE

1, 3, 8, 9,
11, 14, 16, 17
24, 25, 32

GND

18

MBK874

2

MONIN

22

ONE

23

ZERO

13

LA

12

LAQ

15

BIAS

6

BGAP

TZA3041U

handbook, full pagewidth

DIN

DINQ

DLOOP

DLOOPQ

Fig.1 Block diagram of TZA3041AHL.

TONE

10

CC(B)

4

TZERO

31

ALS

LASER

CONTROL

BLOCK

CURRENT

SWITCH

BAND GAP

REFERENCE

1, 3, 8, 9,
11, 14, 16, 17
24, 25, 32

GND

22
23

13
12
15

MBK873

2

MONIN
ONE
ZERO

LA
LAQ
BIAS

6

BGAP

ENL

26 5

28
29

19
20

MUX

TZA3041BHL

18, 21

7

27, 30

411

V

V

V

CC(R)

CC(G)

Fig.2 Block diagram of TZA3041BHL.

1999 Aug 24 3

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

PINNING

PIN PAD

SYMBOL

DESCRIPTION

TZA3041AHL TZA3041BHL TZA3041U

GND 1 1 1 ground
MONIN 2 2 2 monitor photodiode current input
GND 3 3 3 ground
IGM −−4 not used; leave unbonded
TONE 4 4 5 connection for external capacitor used to set optical

ONE control loop time constant (optional)

TZERO 5 5 6 connection for external capacitor used to set optical

ZERO control loop time constant (optional)
BGAP 6 6 7 connection for external band gap decoupling capacitor
V

CC(G)

V

CC(G)

7 7 8 supply voltage (green domain)

−−9 supply voltage (green domain)
GND 8 8 10 ground
GND 9 9 11 ground
V
V

CC(B)
CC(B)

10 10 12 supply voltage (blue domain)

−−13 supply voltage (blue domain)
GND 11 11 14 ground
LAQ 12 12 15 laser modulation output inverted
LA 13 13 16 laser modulation output
GND 14 14 17 ground
BIAS 15 15 18 laser bias current output
GND 16 16 19 ground
GND 17 17 20 ground
GND −−21 ground
ALARMHI 18 − 22 maximum bias current alarm reference level input
V

CC(R)

V

CC(R)

− 18 23 supply voltage (red domain)

19 −−supply voltage (red domain)
DLOOP − 19 24 loop mode data input
V

CC(R)

20 −−supply voltage (red domain)
DLOOPQ − 20 25 loop mode data input inverted
V

CC(R)

−−26 supply voltage (red domain)
ALARMLO 21 − 27 minimum bias current alarm reference level input
V

CC(R)

− 21 − supply voltage (red domain)
ONE 22 22 28 optical ONE reference level input
ZERO 23 23 29 optical ZERO reference level input
GND 24 24 30 ground
GND 25 25 31 ground
ALARM 26 − 32 alarm output
ENL − 26 33 loop mode enable input
V

CC(R)

27 27 34 supply voltage (red domain)

1999 Aug 24 4

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel

TZA3041AHL; TZA3041BHL;

laser drivers

SYMBOL

TZA3041AHL TZA3041BHL TZA3041U

DIN 28 28 35 data input
DINQ 29 29 36 data input inverted
V

CC(R)

30 30 37 supply voltage (red domain)
ALS 31 31 38 automatic laser shutdown input
GND 32 32 39 ground
GND −−40 ground

handbook, full pagewidth

PIN PAD

ALS

GND

31

32

CC(R)

V
30

DINQ
29

DIN

28

CC(R)

V

27

ALARM
26

DESCRIPTION

GND
25

TZA3041U

GND

MONIN

GND

TONE

TZERO

BGAP

V

CC(G)

GND

1
2
3
4
5
6
7
8

9

GND

TZA3041AHL

11

10

GND

CC(B)

V

12

LAQ

LA

13

14

15

16

GND

BIAS

GND

Fig.3 Pin configuration of TZA3041AHL.

24
23
22
21
20
19
18
17

MBK870

GND
ZERO
ONE
ALARMLO
V

CC(R)

V

CC(R)

ALARMHI
GND

1999 Aug 24 5

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

handbook, full pagewidth

1

GND

GND

TONE

BGAP

CC(G)

GND

2
3
4
5
6
7
8

MONIN

TZERO

V

GND
32

9

GND

CC(R)

ALS

V

31

30

TZA3041BHL

11

10

GND

CC(B)

V

DINQ
29

12

LAQ

DIN
28

13
LA

TZA3041AHL; TZA3041BHL;

TZA3041U

CC(R)

ENL

V

27

14

GND

26

15

BIAS

GND
25

16

GND

24
23
22
21
20
19
18
17

MBK875

GND
ZERO
ONE
V

CC(R)

DLOOPQ
DLOOP
V

CC(R)

GND

Fig.4 Pin configuration of TZA3041BHL.

FUNCTIONAL DESCRIPTION

The TZA3041AHL, TZA3041BHL and TZA3041U laser
drivers accept a 1.2 Gbits/s Non-Return to Zero (NRZ)
input data stream and generate an output signal with
sufficient current to drive a solid state Fabry Perot (FP) or
Distributed FeedBack (DFB) laser. They also contain dual
loop control circuitry for stabilizing the true laser optical
power levels representing logic 1 and logic 0.

The input buffers present a high impedance to the data
stream on the differential inputs (pins DIN and DINQ).
The input signal can be at CML level of approximately
200 mV (p-p) below the supply voltage, or at PECL level
upto 800 mV (p-p). The inputs can beconfiguredtoaccept
CML signals by connecting external 50 Ω pull-up resistors
between pins DIN and DINQ to V

CC(R)

. If PECL
compatibility is required, the usual Thevenin termination
can be applied.

For ECL signals (negative and referenced to ground) the
inputs should be AC-coupled to the signal source.
If AC-coupling is applied, a constant input signal (either
low of high) will bring the device in an undefined state.
To avoid this, it is recommended to apply a slight offset to
the input stage. The applied offset must be higher than the
specified value in Chapter “Characteristics”, but much
lower than the applied input voltage swing.

The RF path is fully differential and contains a differential
preamplifier and a main amplifier. The main amplifier is
designed to handle large peak currents required at the
output laser driving stage and is insensitive to supply
voltage variations. The output signal from the main
amplifier drives a current switch which supplies a
guaranteed maximum modulation current of 60 mA at
pins LA and LAQ. Pin BIAS delivers a guaranteed
maximum DC bias current of up to 90 mA for adjusting the
optical laser output to a level above its light emitting
threshold.

Automatic laser control

A laser with a Monitor PhotoDiode (MPD) is required for
the laser control circuit (see Figs 6 and 7).

The MPD current is proportional to the laser emission and
is applied to pin MONIN. The MPD current range is from
100 to 1000 µA (p-p). The inputbufferisoptimized to cope
with MPD capacitances up to 50 pF. To prevent the input
buffer breaking into oscillation with a low MPD
capacitance, it is required to increase the capacitance to
the minimum value specified in Chapter “Characteristics”
by connecting an extra capacitor between pin MONIN and
V

.

CC(G)

1999 Aug 24 6

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

DC reference currents are applied to pins ZERO and ONE
to set the MPD reference levels for laser LOW and laser
HIGH.A resistor connected between pin ZERO and V
and a resistor connected between pin ONE and V
sufficient, but current DACs can also be used.
The voltages on pins ZERO and ONE are held constant at
a level of 1.5 V below V

. The reference current

CC(R)

applied to pin ZERO is multiplied by 4 and the reference
current flowing into pin ONE is multiplied internally by 16.

The reference current and the resistor for the optical ONE
regulation loop (modulation current control) can be
calculated using the following formulae:

I

ONE

R

1

×= A[]

I

------

MPD (ONE)

16

1.5

== Ω[]

ONE

----------­I

ONE

24

------------------------­I

MPD (ONE)

The reference current and resistor for the optical ZERO
regulation loop (bias current control) can be calculated
using the following formulae:

1

×= A[]

I

ZERO

I

-- ­4

MPD (ZERO)

CC(R)

CC(R)

is

(1)

(2)

(3)

TZA3041AHL; TZA3041BHL;

TZA3041U

Itshouldbenoted that the MPD current is stabilized, rather
than the actual laser optical output power. Deviations
between optical output power and MPD current, known as
‘tracking errors’, cannot be corrected.

Designing the modulation and bias loop

TheopticalONE and ZERO regulation loop time constants
are determined by on-chip capacitances. If the resulting
time constants are found to be too small in a specific
application, they can be increased by connecting external
capacitors to pins TZERO and TONE, respectively.

The optical ONE loop time constant and bandwidth can be
estimated using the following formulae:

3

×

80 10

×= s[]

----------------------

η

LASER

LASER

+()× 80× 103×

TONE

(5)

(6)

B

B

τ

ONE

ONE

ONE

40 10

1

= Hz[]

------------------------- ­2πτ

×

ONE

=

------------------------------------------------------------------------------------------------­2π 40 10

12–

C

+×()

TONE

η

12–

× C

R

ZERO

1.5

== Ω[]

-------------­I

ZERO

In these formulae, I

6

---------------------------­I

MPD (ZERO)

MPD(ONE)

and I

MPD(ZERO)

(4)

represent the
monitor photodiode current during an optical ONE and an
optical ZERO, respectively.

Example: A laser is operating at optical output power
levels of 0.3 mW for laser HIGH and 0.03 mW for laser
LOW (extinction ratio of 10 dB). Suppose the
corresponding MPD currents for this type of laser are
260 and 30 µA, respectively.

In this example the reference current is

I

ONE

1

260× 16.25 µA==

-----­16

and flows into pin ONE.

This current can be set using a current source or simply by
a resistor of the appropriate value connected between
pin ONE and V

R

ONE

1.5

----------------

16.25

. In this example the resistor would be

CC(R)

92.3 kΩ==

The reference current at pin ZERO in this example is

I

ZERO

R

ZERO

1

30× 7.5˙µA==

-- ­4

1.5

--------- -

7.5

and can be set using a resistor

200 kΩ==

The optical ZERO loop time constant and bandwidth can
be estimated using the following formulae:

τ

ZERO

B

B

= Hz[]

ZERO

=

ZERO

The term η

40 10

---------------------------­2πτ

---------------------------------------------------------------------------------------------------­2π 40 10

LASER

12–

C

+×()

TZERO

1

×

ZERO

η

LASER

12–

+×()× 50× 103×

(dimensionless) in the above formulae is

50 10

×= s[]

----------------------

C

TZERO

η

LASER

3

×

the product of the two terms:

•ηEO is the electro-optical efficiency which accounts for

the steepness of the laser slope. It is the amount of the
extra optical output power in W/A of modulation current
optical output power.

• R is the monitor photodiode responsivity. It is the
amount of the extra monitor photodiode current in A/W
optical output power.

(7)

(8)

1999 Aug 24 7

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

Example: A laser with an MPD has the following
specifications: PO= 1 mW, Ith=25mA,ηEO= 30 mW/A,
R = 500 mA/W. The term I
current to switch-on the laser. If the laser operates just
above the threshold level, it may be assumed that η
around the optical ZERO level is 50% of ηEO around the
optical ONE level, due to the decreasing slope near the
threshold level.

Inthisexampletheresultingbandwidthfor the optical ONE
regulation loop, without external capacitance, would be:

B

ONE

30 103–× 500× 103–×

--------------------------------------------------------------------­2π 40× 10

× 80× 103×

The resulting bandwidth for the optical ZERO regulation
loop, without external capacitance, would be:

B

ZERO

0.5 30× 103–× 500× 103–×

------------------------------------------------------------------------­2π 40× 10

× 50× 103×

It is not necessary to add additional capacitance with this
type of laser.

Data pattern and bit rate dependency of the control loop

The constants in Equations (1) and (3) are valid, provided
a frequent presence of sufficiently long runs of ‘constant
zero’ and ‘constant one’. The longest run of zeros and
ones, occurring typically within a single loop time period
(τ

ONE

and τ

), must be at least approximately 6 ns.

ZERO

If the longest run of zeros and ones has a lower, but
constant value, there will be a measurable, but fixed
deviation in the scaling factors in Equations (1) and (3).
In practice, it can be witnessed that the optical extinction
ratio will increase if the bit rate is increased. Therefore it is
important to use the actual data patterns and bit rate of the
final application circuit for adjusting the optical levels.

Monitoring the bias and modulation current

Although not recommended, the bias and modulation
currentsgenerated by the laser driver can be monitored by
measuring the voltages on pins TZERO and TONE,
respectively. The relations between these voltages and
thecorrespondingcurrentsaregivenastransconductance
values and are specified in Chapter “Characteristics”.
The voltages on pins TZERO and TONE range from

1.4 to 3.4 V. The impedance connected at these pins
should have an extremely high value. It is mandatory to
use a CMOS buffer or an amplifier with an input
impedance higher than 100 GΩ and an extremely low
input leakage current (pA range).

is the required threshold

th

12–

12–

750 Hz≈=

600 Hz≈=

EO

TZA3041AHL; TZA3041BHL;

TZA3041U

Manual laser override

The automatic laser control function can be overridden by
connecting voltage sources to pins TZERO and TONE to
take direct control of, respectively, the bias current source
and the modulation current source. The control voltages
should be in the range from 1.4 to 3.4 V to sweep the
modulationcurrent through the range from 1 to 60 mA and
the bias current through therange from 1 to 90 mA. These
current ranges are guaranteed. Depending on the
temperature and manufacturing process spread, current
values higher than the specified ranges can be achieved.
However, bias and modulation currents in excess of the
specified range are not supported and should be avoided.

Currents into or out pins TZERO and TONE in excess of
10 µA must be avoided to prevent damage of the circuit.

Automatic laser shut-down and laser slow start

The laser modulation and bias currents can be rapidly
switched off when a HIGH-level (CMOS) is applied to
pin ALS. This function allows the circuit to be shut-down in
the event of an optical system malfunction. A 25 kΩ
pull-down resistor defaults the input of pin ALS to the
non active state.

When a LOW-level is applied to pin ALS, the modulation
and bias current slowly increase to the desired values with
the typical time constants of τ

ONE

and τ

This can be used as a laser slow start.

Bias alarm for TZA3041AHL

The bias current alarm circuit detects and flags whenever
thebias current is outside a predefinedrange. This feature
can detect excessive bias current due to laser aging and
lasermalfunctioning. The maximum permitted bias current
should be applied to pin ALARMHI with an attenuation
ratio of 1500; the minimum to pin ALARMLO with an
attenuation ratio of 300.

Like the reference currents for the laser current control
loop, the alarm reference currents can be set using
external resistors connected between pins ALARMHI
or ALARMLO and V

. The resistor values can be

CC(R)

calculated using the following formulae:

R

ALARMHI

R

ALARMLO

1.5 1500×

= Ω[]

--------------------------- ­I

BIAS(max)

1.5 300×

= Ω[]

-----------------------­I

BIAS(min)

, respectively.

ZERO

(9)

(10)

1999 Aug 24 8

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

Example: The following reference currents are required to
limit the bias current range between 6 and 90 mA:

I

ALARMLO

I

ALARMHI

The corresponding resistor values are:

R

ALARMHI

R

ALARMLO

If the alarm condition is true, the voltage on pin ALARM
goesto HIGH-level (CMOS). This signal could be used, for
example, to disable the laser driver by driving pin ALS
(a latch is needed in between to prevent oscillation).

Loop mode for TZA3041BHL

In the loop mode the total system application can be
tested. It allows for uninhibited optical transmission
through the fibre front-end (from the photodiode through
thetransimpedancestageandthedataandclock recovery
unit, to the laser driver and via the laser back to the fibre).
It should be noted that the optical receiver used in
conjunction with the TZA3041BHL musthave a loop mode
output in order to complete the test loop.

AHIGH-level on pin ENL selects the loop mode. By default
pin ENL is pulled at LOW-level by a 25 kΩ pull-down
resistor.

Power supply connections

Three separate supply domains [labelled V
and V
high-current outputs, the PECL or CML inputs, and the
monitor photodiode current input. The three domains
should be individually filtered before being connected to a
central VCC (see Figs 6 and 7). All supply pins need to
be connected. The supply levels should be equal and in
accordance with the values specified in
Chapter “Characteristics”.

6 mA

------------- ­300

90 mA

---------------- ­1500

1.5 V 1500×

---------------------------------

1.5 V 300×

------------------------------

] are used to provide isolation between the

CC(R)

90 mA

6 mA

20 µA==

60 µA==

and

25 kΩ==

and

75 kΩ==

CC(B)

, V

CC(G)

TZA3041AHL; TZA3041BHL;

TZA3041U

To maximize power supply isolation, the MPD cathode on
the laser should be connected to V
diode anode to V

. It is recommended to provide the

CC(B)

laser anode with a separate decoupling capacitor C11.
The inverted laser driver modulation pin LAQ is generally

not used. To properly balance the output stage, an
equalizationnetwork Z1withanimpedancecomparableto
the laser is connected between pin LAQ and V

All external components should be SMD, preferably of
size 0603 or smaller. The components must be mounted
as close to the IC as possible. It is specially recommended
to mount the following components very close to the IC:

• Power supply decoupling capacitors C2, C4 and C6

• Input matching network on pins DIN and DINQ

• Capacitor C7 on pin MONIN

• Output matching network Z1 at the unused output.

Grounding bare die

In addition to the separate VCC domains, the bare die
contains three corresponding ground domains. Isolation
between the GND domains is limited due to the finite
substrate conductance.

Mountthe die on a, preferably large and highly conductive,
grounded die pad. All pads GND have to be bonded to
the die pad. The external ground is thus optimally
combined with the die ground, avoiding ground bouncing
problems.

Layout recommendations

Layout recommendations for the TZA3041AHL and
TZA3041BHL can be found in application note

Fiber optic transceiverboard STM1/4/8, OC3,12,24,
FC/GE”

.

and the laser

CC(G)

.

CC(B)

“AN98090

1999 Aug 24 9

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

n

supply voltage −0.5 +6 V
DC voltage on

pin MONIN 1.3 VCC+ 0.5 V
pins TONE and TZERO −0.5 VCC+ 0.5 V
pin BGAP −0.5 +3.2 V
pin BIAS −0.5 VCC+ 0.5 V
pins LA and LAQ 1.3 VCC+ 0.5 V
pin ALS −0.5 VCC+ 0.5 V
pins ONE and ZERO −0.5 VCC+ 0.5 V
pins DIN and DINQ −0.5 VCC+ 0.5 V
pin ALARM TZA3041AHL −0.5 VCC+ 0.5 V
pins ALARMHI and ALARMLO TZA3041AHL −0.5 VCC+ 0.5 V
pins DLOOP and DLOOPQ TZA3041BHL −0.5 VCC+ 0.5 V
pin ENL TZA3041BHL −0.5 VCC+ 0.5 V

I

n

DC current on

pin MONIN −0.5 +2.5 mA
pins TONE and TZERO −0.5 +0.5 mA
pin BGAP −2.0 +2.5 mA
pin BIAS −0.5 +200 mA
pins LA and LAQ −0.5 +100 mA
pin ALS −0.5 +0.5 mA
pins ONE and ZERO −0.5 +0.5 mA
pins DIN and DINQ −0.5 +0.5 mA
pin ALARM TZA3041AHL −0.5 +10 mA
pins ALARMHI and ALARMLO TZA3041AHL −0.5 +0.5 mA
pins DLOOP and DLOOPQ TZA3041BHL −0.5 +0.5 mA
pin ENL TZA3041BHL −0.5 +0.5 mA

T

amb

T

j

T

stg

ambient temperature −40 +85 °C
junction temperature −40 +125 °C
storage temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R
R

th(j-s)
th(j-c)

thermal resistance from junction to solder point 15 K/W
thermal resistance from junction to case 23 K/W

1999 Aug 24 10

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

CHARACTERISTICS

VCC=5V; T

= −40 to +85 °C; all voltages measured with respect to GND.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V
I
P

CC

CC

tot

supply voltage 4.75 5 5.25 V
supply current note 1 − 65 90 mA

total power dissipation note 2 − 430 810 mW
Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3041BHL); see Fig.5
V

i(p-p)

input voltage

differential 100 250 800 mV

(peak-to-peak value)
V

IO

V

I(min)

V

I(max)

Z

i

input offset voltage −25 − +25 mV

minimum input voltage V

maximum input voltage −−V

input impedance for low frequencies;

− 2 −− V

CC(R)

+ 0.25 V

CC(R)

81012kΩ

single-ended

CMOS inputs: pin ALS (and pin ENL on TZA3041BHL)

V

IL

V

IH

R

pd(ALS)

LOW-level input voltage −−1.5 V

HIGH-level input voltage 3.5 −− V

internal pull-down resistance on

21 25.5 30 kΩ

pin ALS
R

pd(ENL)

internal pull-down resistance on

15 25 35 kΩ

pin ENL

CMOS output: pin ALARM (on TZA3041AHL)

V

OL

V

OH

LOW-level output voltage IOH= −200 µA0 − 0.2 V

HIGH-level output voltage IOH= 200 µA 4.8 − 5V

Monitor photodiode input: pin MONIN

V
I

MPD

I

DC input voltage 1.5 1.8 2.0 V

monitor photodiode current laser optical ‘0’ 24 − 260 µA

laser optical ‘1’ 96 − 1040 µA

C

MPD

monitor photodiode capacitance note 3 30 − 50 pF

Control loop reference currents: pins ONE and ZERO

I

ref(ONE)

V

ref(ONE)

I

ref(ZERO)

V

ref(ZERO)

reference current on pin ONE note 4 6 − 65 µA

reference voltage on pin ONE referenced to V

−1.55 −1.5 −1.45 V

CC(R)

reference current on pin ZERO note 4 6 − 65 µA

reference voltage on pin ZERO referenced to V

−1.55 −1.5 −1.45 V

CC(R)

Control loop time constants: pins TONE and TZERO

V

TONE

g

m(TONE)

V

TZERO

g

m(TZERO)

voltage on pin TONE floating output 1.4 − 3.4 V

transconductance of pin TONE note 5 − 100 − mA/V

voltage on pin TZERO floating output 1.4 − 3.4 V

transconductance of pin TZERO note 6 − 160 − mA/V

1999 Aug 24 11

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Laser modulation outputs: pins LA and LAQ

I

O

I

O(off)

modulation output current note 7 3 − 60 mA

output current during laser

−−10 µA

shutdown
V

O

t

r

t

f

J

o(p-p)

output voltage 2 − 5V

current rise time note 8 − 120 300 ps

current fall time note 8 − 120 300 ps

intrinsic electrical output jitter

note 9 −−50 mUI

(peak-to-peak value)

Bias current output: pin BIAS

I

O

I

O(off)

output current note 10 2.5 − 90 mA

output current during laser

−−10 µA

shutdown
t

res(off)

V

O

response time after laser

shutdown

I

= 90 mA;

BIAS

note 11

−−1 µs

output voltage 1 − 5V

Alarm threshold inputs: pin ALARMHI and ALARMLO (on TZA3041AHL)

I

ref(ALARMLO)

threshold reference current on

lower alarm; note 12 6 − 65 µA

pin ALARMLO
V

ref(ALARMLO)

optical reference voltage on

referenced to V

−1.55 −1.5 −1.45 V

CC(R)

pin ALARMLO
I

ref(ALARMHI)

V

ref(ALARMHI)

threshold reference current on

pin ALARMHI

optical reference voltage on

higher alarm;
note 12

referenced to V

6 − 65 µA

−1.55 −1.5 −1.45 V

CC(R)

pin ALARMHI

Notes

1. Remarks to the supply current:
a) The value for ICC does not include the modulation and bias currents through pins LA, LAQ and BIAS.
b) Typical value for ICC refers to, but does not include, I
c) The maximum value of ICC refers to, but does not include, I

= 30 mA and I

MOD

MOD

BIAS

= 60 mA and I

= 45 mA.

= 90 mA.

BIAS

2. Remarks to the power dissipation:
a) The value for P
b) The typical value for P

V

= 1 V and typical process parameters.

BIAS

c) The maximum value for P

V

= 1 V and worst case process parameters.

BIAS

includes the modulation and bias currents through pins LA, LAQ and BIAS.

tot

is the on-chip dissipation with I

tot

istheon-chipdissipation with I

tot

= 30 mA and VLA=V

MOD

=60mAandVLA=V

MOD

LAQ

LAQ

= 2 V, I

=2V,I

= 45 mA and

BIAS

=90mAand

BIAS

3. The minimum value of the capacitance on pin MONIN is required to prevent instability.

4. The reference currents can be set using a resistor connected between pins ONE or ZERO and V

CC

(see Section “Automatic laser control”). The corresponding ZERO level MPD current range is from 24 to 260 µA.
The ONE level MPD current range is from 96 to 1040 µA.

5. The specified transconductance is the ratio between the modulation current at pins LA or LAQ and the voltage at
pin TONE, under small signal conditions.

1999 Aug 24 12

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

6. The specified transconductance is the ratio between the biasing current at pin BIAS and the voltage at pin TZERO,
under small signal conditions.

7. The values indicate the guaranteed interval, i.e. the lowest attainable output current is always lower than 3 mA and
the highest output current always higher than 60 mA.

8. The voltage rise and fall times can be larger, due to capacitive effects. Specifications are guaranteed by design and
characterization. Each device is tested at full operating speed to guarantee the RF functionality.

9. Measured in a frequency band from 250 kHz to 5 MHz, according to

“ITU-T Recommendation G.813”

.
The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification
is guaranteed by design.

10. The values indicate the guaranteed interval, i.e. the lowest output current always is less than 2.5 mA and the highest
output current is always more than 90 mA.

11. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH-level) and
the extinction of the bias current (at 10% of the original value).

12. The reference currents can be set by using a resistor between V

and pins ALARMLO or ALARMHI;

CC(R)

see Section “Bias alarm for TZA3041AHL” for detailed information. The corresponding range of low-bias thresholds
is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA.

handbook, full pagewidth

V

I(max)

V

I(min)

V

IO

V

CC(R)

V

i(p-p)

MGK274

Fig.5 Logic level symbol definitions for data inputs.

1999 Aug 24 13

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

APPLICATION INFORMATION

L1

handbook, full pagewidth

V

CC

C7

C1
1 µF

C3
1 µF

C5
1 µF

(1)

C8

C9

L2

L3

C10

(2)

(3)

22 nF

C2
22 nF

C4
22 nF

C6
22 nF

MONIN

TONE

TZERO

BGAP

2

4

5

6

V

CC(G)

V

CC(B)

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

GND BIAS LA LAQ

11

4

19, 20,

27, 30

(CML/PECL compatible)

V

ALS

CC(R)

31710

TZA3041AHL

15 13 12

R5
18 Ω

data inputs

normal mode

DINQ29DIN28ALARM

26
23

22

21
18

(6)

Z1

TZA3041AHL; TZA3041BHL;

TZA3041U

(4)

ZERO
ONE

ALARMLO
ALARMHI

R1

(4)R3(5)

R2

R4

(5)

L1

C11

MBK877

MPD

(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”).
(2) C8 enhances modulation control loop time constant (optional).
(3) C9 enhances bias control loop time constant (optional).
(4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”).
(5) R3 and R4 are used for minimum and maximum bias currents setting (see Section “Bias alarm for TZA3041AHL”).
(6) Z1 is required for balancing the output stage (see Section “Power supply connections”).

laser

Fig.6 Application diagram showing the TZA3041AHL configured for 1.2 Gbits/s (Gigabit Ethernet/Fibre Channel).

1999 Aug 24 14

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

L1

handbook, full pagewidth

V

CC

C7

C1
1 µF

C3
1 µF

C5
1 µF

(1)

L2

L3

C8

C9

C10

(2)

(3)

22 nF

C2
22 nF

C4
22 nF

C6
22 nF

MONIN

TONE

TZERO

BGAP

2

4

5

6

V

CC(G)

V

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

11

data inputs

normal mode

4

CC(B)

18, 21,

27, 30

(CML/PECL compatible)

V

CC(R)

ALS

31710

DINQ29DIN28ENL

TZA3041BHL

15 13 12

GND BIAS LA LAQ

R3
18 Ω

Z1

TZA3041AHL; TZA3041BHL;

TZA3041U

(4)

26

ZERO

23

ONE

22

DLOOPQ

20

DLOOP

19

(5)

R1

(4)

R2

loop mode inputs

(CML/PECL
compatible)

L1

C11

MBK876

MPD

(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”).
(2) C8 enhances modulation control loop time constant (optional).
(3) C9 enhances bias control loop time constant (optional).
(4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”).
(5) Z1 is required for balancing the output stage (see Section “Power supply connections”).

laser

Fig.7 Application diagram showing the TZA3041BHL configured for 1.2 Gbits/s (Gigabit Ethernet/Fibre Channel).

1999 Aug 24 15

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

BONDING PADS

SYMBOL PAD

GND 1 −664 −910
MONIN 2 −524 −910
GND 3 −367 −910
IGM 4 −227 −910
TONE 5 −70 −910
TZERO 6 +87 −910
BGAP 7 +244 −910
V

CC(G)

V

CC(G)

8 +384 −910

9 +524 −910
GND 10 +664 −910
GND 11 +910 −630
V
V

CC(B)
CC(B)

12 +910 −490

13 +910 −350
GND 14 +910 −210
LAQ 15 +910 −70
LA 16 +910 +70
GND 17 +910 +210
BIAS 18 +910 +350
GND 19 +910 +490
GND 20 +910 +630
GND 21 +681 +910
ALARMHI 22 +541 +910

COORDINATES

XY

(1)

TZA3041AHL; TZA3041BHL;

TZA3041U

SYMBOL PAD

COORDINATES

XY

V

CC(R)

23 +384 +910
DLOOP 24 +227 +910
DLOOPQ 25 +87 +910
V

CC(R)

26 −70 +910
ALARMLO 27 −210 +910
ONE 28 −367 +910
ZERO 29 −524 +910
GND 30 −681 +910
GND 31 −910 +681
ALARM 32 −910 +541
ENL 33 −910 +384
V

CC(R)

34 −910 +227
DIN 35 −910 +70
DINQ 36 −910 −70
V

CC(R)

37 −910 −227
ALS 38 −910 −367
GND 39 −910 −551
GND 40 −910 −664

Note

1. All x and y coordinates represent the position of the
centreofthepadin µm with respect to the centre of the
die (see Fig.8).

(1)

1999 Aug 24 16

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

handbook, full pagewidth

GND

31

GND

ENL

DIN

DINQ

ALS

GND
GND

32

33

34

35
36

37
38

39
40

ALARM

V

CC(R)

V

CC(R)

ZERO

ALARMLO

ONE

x

0

TZA3041U

2 mm

CC(R)

V

0
y

(1)

DLOOP

DLOOPQ

TZA3041AHL; TZA3041BHL;

TZA3041U

CC(R)

V

GND

ALARMHI

21222324252627282930

20

GND
GND

19
18

BIAS

17

GND

16

LA

15

LAQ

14

GND
V

13

CC(B)

12

V

CC(B)

11

GND

2 mm

(1)

12 5 6 78910

3

4

MBK871

(1) Typical value.

GND

GND

MONIN

IGM

TONE

BGAP

TZERO

CC(G)

V

CC(G)

V

GND

Fig.8 Bonding pad locations of TZA3041U.

Table 1 Physical characteristics of bare die

PARAMETER VALUE

Glass passivation 2.1 µm PSG (PhosphoSilicate Glass) on top of 0.7 µm silicon nitride
Bonding pad dimension minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
Metallization 1.2 µm AlCu (1% Cu)
Thickness 380 µm nominal
Size 2.000 × 2.000 mm (4.000 mm2)
Backing silicon; electrically connected to GND potential through substrate contacts
Attache temperature <430 °C; recommended die attache is glue
Attache time <15 s

1999 Aug 24 17

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel

TZA3041AHL; TZA3041BHL;

laser drivers

PACKAGE OUTLINE

LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm

c

y

X

24

25

17

Z

16

E

A

TZA3041U

SOT401-1

e

pin 1 index

32

1

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.60

A

1A2A3bp

0.15

1.5

1.3

0.25

0.05

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

w M

b

p

D

H

D

cE

0.27

0.18

0.17

0.12

9

8

Z

D

B

0 2.5 5 mm

(1) (1)(1)

D

5.1

4.9

w M

b

p

v M

v M

scale

(1)

eH

H

5.1

4.9

0.5

7.15

6.85

H

E

E

A

B

E

D

7.15

1.0

6.85

A

2

A

LL

p

0.75

0.45

A

0.2

1

detail X

0.12 0.1

Z

0.95

0.55

D

L

p

L

Zywv θ

E

0.95

0.55

(A )

o

7

o

0

3

θ

OUTLINE
VERSION

SOT401-1

IEC JEDEC EIAJ

REFERENCES

1999 Aug 24 18

EUROPEAN

PROJECTION

ISSUE DATE

95-12-19
97-08-04

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

SOLDERING
Introduction to soldering surface mount packages

Thistextgivesavery brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave solderingis not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices () or printed-circuit boards with
a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

TZA3041AHL; TZA3041BHL;

TZA3041U

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Aug 24 19

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(3)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

, SO, SOJ suitable suitable

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

The package footprint must incorporate solder thieves downstream and at the side corners.

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

WAVE REFLOW

(2)

(3)(4)
(5)

TZA3041AHL; TZA3041BHL;

TZA3041U

SOLDERING METHOD

(1)

suitable

suitable
suitable

.

1999 Aug 24 20

Philips Semiconductors Preliminary specification

Gigabit Ethernet/Fibre Channel
laser drivers

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

TZA3041AHL; TZA3041BHL;

TZA3041U

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.

1999 Aug 24 21

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209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

1999

Internet: http://www.semiconductors.philips.com

67

Printed in The Netherlands 465012/02/pp24 Date of release: 1999 Aug 24 Document order number: 9397 750 05284