Datasheet TZA3033T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TZA3033

SDH/SONET STM1/OC3
transimpedance amplifier

Objective specification
File under Integrated Circuits, IC19

1998 Jul 08

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

FEATURES

• Low equivalent input noise, typically 1 pA/√Hz

• Wide dynamic range, typically 0.25 µA to 1.6 mA

• Differential transimpedance of 117 kΩ

• Bandwidth minimum 150 MHz

• Differential outputs

• On-chip AGC (Automatic Gain Control)

• No external components required

• Single supply voltage from 3.0 to 5.5 V

• Bias voltage for PIN diode

• Pin compatible with SA5223.

APPLICATIONS

• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high speed data networks

• Wideband RF gain block.

GENERAL DESCRIPTION

The TZA3033 is a low-noise transimpedance amplifier with
AGC designed to be used in STM1/OC3 fibre optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TZA3033T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TZA3033U naked die die in waffle pack carriers; die dimensions 0.960 × 1.210 mm −

BLOCK DIAGRAM

handbook, full pagewidth

V

CC

1 nF

1 (1)

DREF

3 (5)IPhoto

(1) AGC analog I/O is only available on the TZA3033U (pad 15).
The numbers in brackets refer to the pad numbers of the naked die version.

2 kΩ

65 pF

3

GND

GAIN

CONTROL

A1

low noise

TZA3033

2, 4, 5 (3, 4, 7, 8, 9, 10)

Fig.1 Block diagram.

(1)

AGC

peak detector

A2

amplifier single-ended to

differential converter

BIASING

V

CC

8 (13, 14)(15)

(12) 7 OUTQ
(11) 6 OUT

MGR368

1998 Jul 08 2

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

PINNING

SYMBOL PIN TYPE DESCRIPTION

DREF 1 analog output bias voltage for PIN diode (V
GND 2 ground ground
IPhoto 3 analog input current input; anode of PIN diode should be connected to this pin; DC bias

voltage is 1048 mV
GND 4 ground ground
GND 5 ground ground
OUT 6 data output data output; OUT goes HIGH when current flows into IPhoto (pin 3)
OUTQ 7 data output compliment of OUT (pin6)
V

CC

8 supply supply voltage

); cathode should be connected to this pin

CC

handbook, halfpage

DREF

1
2

TZA3033T

3

IPhoto

4

GND

MGR369

Fig.2 Pin configuration.

V

8

CC

OUTQGND

7

OUT

6

GND

5

1998 Jul 08 3

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

PAD CONFIGURATION
Bonding pad locations

handbook, full pagewidth

18

DREF

V

CC

GND

IPhoto

GND

Pad 15 (AGC) is not bonded.

2

TESTA

TESTB

36

AGC

15

1
2

3

TZA3033U

4

5
6

7

89

7

OUTQ

13

14

12
11

10

OUT

GND

45

MGR371

Fig.3 Bonding diagram TZA3033U.

1998 Jul 08 4

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

Pad centre locations

COORDINATES

(1)

SYMBOL PAD

xy

DREF 1 95 881
TESTA 2 95 735
GND 3 95 618
GND 4 95 473
IPhoto 5 95 285
TESTB 6 95 147
GND 7 215 95
GND 8 360 95
GND 9 549 95
GND 10 691 95
OUT 11 785 501
OUTQ 12 785 641
V

CC

V

CC

13 567 1055
14 424 1055

AGC 15 259 1055

Note

1. All coordinates (µm) are measured with respect to the
bottom left-hand corner of the die.

FUNCTIONAL DESCRIPTION

The TZA3033 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM1/OC3
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of the TZA3033 are high receiver
sensitivity and wide dynamic range.

High receiver sensitivity is achieved by minimizing noise in
the transimpedance amplifier.

The signal current generated by a PIN diode can vary
between 0.25 µA to 1.6 mA (peak-to-peak value).
An AGC loop (see Fig.1) is implemented to make it
possible to handle such a wide dynamic range.
The AGC loop increases the dynamic range of the
receiver by reducing the feedback resistance of the
preamplifier. The AGC loop hold capacitor is integrated
on-chip, so an external capacitor is not needed for AGC.

The AGC voltage can be monitored at pad 15 on the naked
die (TZA3033U). Pad 15 is not bonded in the packaged
device (TZA3033T). This pad can be left unconnected
during normal operation. It can also be used to force an
external AGC voltage. If pad 15 (AGC) is connected to

, the internal AGC loop is disabled and the receiver

V

CC

gain is at a maximum. The maximum input current is then
about 10 µA.

A differential amplifier converts the output of the
preamplifier to a differential voltage. The data output circuit
is given in Fig.4.

The logic level symbol definitions are shown in Fig.5.

1998 Jul 08 5

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

handbook, full pagewidth

V

CC

800 Ω 800 Ω

2 mA

30 Ω
30 Ω

4.5 mA

4.5 mA

OUTQ
OUT

MGR290

Fig.4 Data output circuit.

handbook, full pagewidth

V

O(max)

V

OQH

V

OH

V

OQL

V

OL

V

O(min)

Fig.5 Logic level symbol definitions for data outputs OUT and OUTQ.

1998 Jul 08 6

V

CC

V

o(p-p)

V

OO

MGR243

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

V

n

I

n

P

tot

T

stg

T

j

T

amb

supply voltage −0.5 +5.5 V
DC voltage

pin 3/pad 5: IPhoto −0.5 +2 V
pins 6 and 7/pads 11 and 12: OUT and OUTQ −0.5 V
pad 15: AGC (TZA3033U only) −0.5 V
pin 1/pad 1: DREF −0.5 V

+ 0.5 V

CC

+ 0.5 V

CC

+ 0.5 V

CC

DC current

pin 3/pad 5: IPhoto −1 +2.5 mA
pins 6 and 7/pads 11 and 12: OUT and OUTQ −15 +15 mA
pad 15: AGC (TZA3033U only) −0.2 +0.2 mA

pin 1/pad 1: DREF −2.5 +2.5 mA
total power dissipation − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −40 +85 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R
R

th(j-s)
th(j-a)

thermal resistance from junction to solder point tbf K/W
thermal resistance from junction to ambient tbf K/W

CHARACTERISTICS

For typical values T

=25°C and VCC= 5 V; minimum and maximum values are valid over the entire ambient

amb

temperature range and process spread.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

P

tot

T

j

T

amb

R

tr

f

−3dB(h)

supply voltage 3 5 5.5 V
supply current AC coupled; RL=50Ω− 37 − mA
total power dissipation VCC=5V − 185 − mW

V

= 3.3 V − 116 − mW

CC

junction temperature −40 − +120 °C
ambient temperature −40 +25 +85 °C
small-signal

transresistance of the
receiver

high frequency

measured differentially;
AC coupled

R

= ∞−234 − kΩ

L

R

=50Ω−117 − kΩ

L

Ci= 0.7 pF 120 150 − MHz

−3 dB point

1998 Jul 08 7

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

n(tot)

total integrated RMS
noise current over
bandwidth

∆R

/∆t AGC loop constant − 1 − dB/ms

tr

PSRR power supply rejection

ratio

Input: IPhoto

I

i(IPhoto)(p-p)

input current on
pin IPhoto (peak-to-peak
value)

V

bias(IPhoto)

input bias voltage on
pin IPhoto

referred to input; note 1

∆f = 90 MHz − 16 − nA
∆f = 120 MHz − tbf − nA
∆f = 150MHz − tbf − nA

measured differentially;
note 2

f = 100 kHz to 10 MHz − 0.5 −µA/V
f = 100 MHz − 10 −µA/V

VCC=5V −500 +1 +1800 µA
V

= 3.3 V −500 +1 +1600 µA

CC

− 1048 − mV

Data outputs: OUT and OUTQ

V

O(CM)

common mode output

AC coupled; RL=50Ω VCC− 1.800 VCC− 1.700 VCC− 1.600 V

voltage

V

o(se)(p-p)

single-ended output

AC coupled; RL=50Ω− 150 260 mV
voltage (peak-to-peak
value)

V

OO

differential output offset

−100 − +100 mV

voltage

R

o

t

r

t

f

output resistance single-ended; DC tested 42 50 58 Ω
rise time 20% to 80% − tbf − ps
fall time 80% to 20% − tbf − ps

Notes

1. All I

measurements were made with an input capacitance of Ci= 1 pF. This was comprised of 0.5 pF for the

n(tot)

photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.

2. PSRR is defined as the ratio of the equivalent current change at the input (∆I
∆I

IPhoto

PSRR

For example, a disturbance of +4 mV disturbance on V

=

--------------------

∆V

CC

at 10 MHz will typically add an extra 2 nA to the photodiode

CC

) to a change in supply voltage:

IPhoto

current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.

1998 Jul 08 8

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

APPLICATION INFORMATION

handbook, full pagewidth

1 nF

DREF

IPhoto

10 µH

22 nF

V

CC

8

1

TZA3033T

3

4

2

GND

GND5GND

680 nF

V

P

7

6

OUTQ

OUT

Zo = 50 Ω

Zo = 50 Ω

100 nF

100 nF

R3
50 Ω

R4
50 Ω

MGR370

Fig.6 Application diagram.

1998 Jul 08 9

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

PACKAGE OUTLINE

SO8: plastic small outline package; 8 leads; body width 3.9 mm

D

c

y

Z

8

pin 1 index

1

e

5

A

2

A

4

w M

b

p

SOT96-1

E

H

E

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT96-1

A

max.

1.75

0.069

A

1

0.25

0.10

0.010

0.004

A2A

1.45

1.25

0.057

0.049

IEC JEDEC EIAJ

076E03S MS-012AA

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

4.0

3.8

0.16

0.15

1.27

0.050

1998 Jul 08 10

eHELLpQZywv θ

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

6.2

5.8

0.244

0.228

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

95-02-04
97-05-22

o

8

o

0

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Jul 08 11

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jul 08 12

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

NOTES

1998 Jul 08 13

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

NOTES

1998 Jul 08 14

Philips Semiconductors Objective specification

SDH/SONET STM1/OC3 transimpedance amplifier TZA3033

NOTES

1998 Jul 08 15

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