Datasheet TZA3031U, TZA3031BHL, TZA3031AHL Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

DATA SH EET

TZA3031AHL; TZA3031BHL; TZA3031U

SDH/SONET STM1/OC3 laser drivers

Preliminary speciﬁcation Supersedes data of 1998 Jul 29 File under Integrated Circuits, IC19

1999 Aug 24

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

FEATURES

• 155 Mbits/s data input,both Current-Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p)

• Adaptive laser output control with dual loop, stabilizing optical ONE and ZERO levels

• Optionalexternalcontroloflasermodulation and biasing currents (non-adaptive)

• Automatic laser shutdown

• Few external components required

• Rise and fall times of 120 ps (typical value)

• Jitter <50 mUI (p-p)

• RF output current sinking capability of 60 mA

• Bias current sinking capability of 90 mA

• Power dissipation of 430 mW (typical value)

• Low cost LQFP32 plastic package

• Single 5 V power supply.

TZA3031AHL

• Laser alarm outputfor signalling extremely low and high bias current conditions.

TZA3031BHL

TZA3031AHL; TZA3031BHL;

TZA3031U

APPLICATIONS

• SDH/SONET STM1/OC3 optical transmission systems

• SDH/SONET STM1/OC3 optical laser modules.

GENERAL DESCRIPTION

The TZA3031AHL, TZA3031BHL and TZA3031U are fully integrated laser drivers for STM1/OC3 (155 Mbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC, the external component count is low. Only decoupling capacitors and adjustment resistors are required.

TheTZA3031AHL features analarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC).

The TZA3031BHL is provided with an additional RF data input to facilitate remote (loop mode) system testing.

The TZA3031U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3031AHL and the TZA3031BHL.

• ExtraSTM1 155 Mbits/s loop modeinput; both CML and PECL compatible.

TZA3031U

• Bare die version with combined bias alarm and loop mode functionality.

ORDERING INFORMATION

TYPE

NUMBER

TZA3031AHL LQFP32 plastic low proﬁle quad ﬂat package;32 leads; body 5 × 5 × 1.4 mm SOT401-1 TZA3031BHL TZA3031U − bare die; 2000 × 2000 × 380 µm −

NAME DESCRIPTION VERSION

PACKAGE

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

BLOCK DIAGRAMS

TONE

handbook, full pagewidth

DIN

DINQ

ALARM

data input

(differential)

28 29

TZA3031AHL

19, 20

27, 30

411

CC(R)

CC(G)

CC(B)

TZA3031AHL; TZA3031BHL;

TZA3031U

ALARMLO

ALS

ALARMHITZERO

215

LASER

CONTROL

BLOCK

CURRENT

SWITCH

BAND GAP

REFERENCE

1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32

GND

MBK844

MONIN

ONE

ZERO

LAQ

BIAS

BGAP

handbook, full pagewidth

DIN

DINQ

DLOOP

DLOOPQ

Fig.1 Block diagram of TZA3031AHL.

TONE

CC(B)

TZERO

LASER

CONTROL

BLOCK

CURRENT

SWITCH

BAND GAP

REFERENCE

1, 3, 8, 9,

ALS

11, 14, 16, 17 24, 25, 32

GND

22 23

13 12 15

MBK843

MONIN ONE ZERO

LA LAQ BIAS

BGAP

ENL

26 5

28 29

19 20

MUX

TZA3031BHL

18, 21

27, 30

411

CC(R)

CC(G)

Fig.2 Block diagram of TZA3031BHL.

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

PINNING

SYMBOL

TZA3031AHL TZA3031BHL TZA3031U

GND 1 1 1 ground MONIN 2 2 2 monitor photodiode current input GND 3 3 3 ground IGM −−4 not used; leave unbonded TONE 4 4 5 connection for external capacitor used to set optical

TZERO 5 5 6 connection for external capacitor used to set optical

BGAP 6 6 7 connection for external band gap decoupling capacitor V

CC(G)

GND 8 8 10 ground GND 9 9 11 ground V V

CC(B) CC(B)

10 10 12 supply voltage (blue domain)

GND 11 11 14 ground LAQ 12 12 15 laser modulation output inverted LA 13 13 16 laser modulation output GND 14 14 17 ground BIAS 15 15 18 laser bias current output GND 16 16 19 ground GND 17 17 20 ground GND −−21 ground ALARMHI 18 − 22 maximum bias current alarm reference level input V

CC(R)

19 −−supply voltage (red domain) DLOOP − 19 24 loop mode data input V

CC(R)

20 −−supply voltage (red domain) DLOOPQ − 20 25 loop mode data input inverted V

CC(R)

ALARMLO 21 − 27 minimum bias current alarm reference level input V

CC(R)

ONE 22 22 28 optical ONE reference level input ZERO 23 23 29 optical ZERO reference level input GND 24 24 30 ground GND 25 25 31 ground ALARM 26 − 32 alarm output ENL − 26 33 loop mode enable input V

CC(R)

27 27 34 supply voltage (red domain)

PIN PAD

DESCRIPTION

ONE control loop time constant (optional)

ZERO control loop time constant (optional)

7 7 8 supply voltage (green domain)

−−9 supply voltage (green domain)

−−13 supply voltage (blue domain)

− 18 23 supply voltage (red domain)

−−26 supply voltage (red domain)

− 21 − supply voltage (red domain)

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

SYMBOL

TZA3031AHL TZA3031BHL TZA3031U

DIN 28 28 35 data input DINQ 29 29 36 data input inverted V

CC(R)

30 30 37 supply voltage (red domain) ALS 31 31 38 automatic laser shutdown input GND 32 32 39 ground GND −−40 ground

handbook, full pagewidth

PIN PAD

ALS

GND

TONE

BGAP

CC(G)

GND

2 3 4 5 6 7 8

TZA3031AHL

MONIN

TZERO

CC(R)

V 30

DINQ 29

DIN

CC(R)

ALARM

GND 25

DESCRIPTION

GND

ZERO

ONE

ALARMLO

CC(R)

ALARMHI

18 17

GND

TZA3031U

GND

CC(B)

GND

LAQ

Fig.3 Pin configuration of TZA3031AHL.

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MBK846

GND

BIAS

GND

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

handbook, full pagewidth

GND

MONIN

GND

TONE

TZERO

BGAP

CC(G)

GND

GND 32

1 2 3 4 5 6 7 8

GND

CC(R)

ALS

TZA3031BHL

GND

CC(B)

DINQ 29

LAQ

DIN 28

13 LA

TZA3031AHL; TZA3031BHL;

TZA3031U

CC(R)

ENL

GND

BIAS

GND 25

GND

24 23 22 21 20 19 18 17

MBK845

GND ZERO ONE V

CC(R)

DLOOPQ DLOOP V

CC(R)

GND

Fig.4 Pin configuration of TZA3031BHL.

FUNCTIONAL DESCRIPTION

The TZA3031AHL, TZA3031BHL and TZA3031U laser drivers accept a 155 Mbits/s STM1 Non-Return to Zero (NRZ) input data stream and generate an output signal with sufficient current to drive a solid state Fabry Perot (FP) or Distributed FeedBack (DFB) laser. They also contain dual loop control circuitry for stabilizing the true laser optical power levels representing logic 1 and logic 0.

The input buffers present a high impedance to the data stream on the differential inputs (pins DIN and DINQ). The input signal can be at CML level of approximately 200 mV (p-p) below the supply voltage, or at PECL level upto800 mV (p-p).Theinputs can be configured to accept CML signals by connecting external 50 Ω pull-up resistors between pins DIN and DINQ to V

CC(R)

. If PECL compatibility is required, the usual Thevenin termination can be applied.

For ECL signals (negative and referenced to ground) the inputs should be AC-coupled to the signal source. If AC-coupling is applied, a constant input signal (either low of high) will bring the device in an undefined state. To avoid this, it is recommended to apply a slight offset to the input stage.The applied offset must be higher thanthe specified value in Chapter “Characteristics”, but much lower than the applied input voltage swing.

The RF path is fully differential and contains a differential preamplifier and a main amplifier. The main amplifier is designed to handle large peak currents required at the output laser driving stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a guaranteed maximum modulation current of 60 mA at pins LA and LAQ. Pin BIAS delivers a guaranteed maximum DC bias current of up to 90 mA for adjustingthe optical laser output to a level above its light emitting threshold.

Automatic laser control

A laser with a Monitor PhotoDiode (MPD) is required for the laser control circuit (see Figs 6 and 7).

The MPD current is proportional to the laser emission and is applied to pin MONIN. The MPD current range is from 100 to 1000 µA (p-p).Theinputbufferis optimized to cope with MPD capacitances up to 50 pF. To prevent the input buffer breaking into oscillation with a low MPD capacitance, it is required to increase the capacitance to the minimum value specified in Chapter “Characteristics” by connecting an extra capacitor between pin MONIN and V

CC(G)

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

DC reference currents are applied topins ZERO and ONE to set the MPD reference levels for laser LOW and laser HIGH.Aresistor connected between pin ZERO and V and a resistor connected between pin ONE and V sufficient, but current DACs can also be used. The voltages on pins ZERO and ONE are heldconstant at a level of 1.5 V below V

. The reference current

CC(R)

applied to pin ZERO is multiplied by 4 and the reference current flowing into pin ONE is multiplied internally by 16.

The reference current and the resistor for the optical ONE regulation loop (modulation current control) can be calculated using the following formulae:

ONE

×= A[]

------

MPD (ONE)

1.5

== Ω[]

ONE

----------I

ONE

------------------------I

MPD (ONE)

The reference current and resistor for the optical ZERO regulation loop (bias current control) can be calculated using the following formulae:

×= A[]

ZERO

-- 4

MPD (ZERO)

CC(R)

(1)

(2)

(3)

TZA3031AHL; TZA3031BHL;

TZA3031U

Itshould be noted thattheMPD current is stabilized,rather than the actual laser optical output power. Deviations between optical output power and MPD current, known as ‘tracking errors’, cannot be corrected.

Designing the modulation and bias loop

Theoptical ONE and ZEROregulation loop time constants are determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting external capacitors to pins TZERO and TONE, respectively.

The optical ONEloop time constant and bandwidth can be estimated using the following formulae:

80 10

×= s[]

----------------------

LASER

+()× 80× 103×

TONE

(5)

(6)

ONE

40 10

= Hz[]

------------------------- 2πτ

ONE

------------------------------------------------------------------------------------------------2π 40 10

12–

+×()

TONE

12–

× C

ZERO

1.5

== Ω[]

-------------I

ZERO

In these formulae, I

---------------------------I

MPD (ZERO)

MPD(ONE)

and I

MPD(ZERO)

(4)

represent the monitor photodiode current during an optical ONE and an optical ZERO, respectively.

Example: A laser is operating at optical output power levels of 0.3 mW for laser HIGH and 0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this type of laser are 260 and 30 µA, respectively.

In this example the reference current is

ONE

260× 16.25 µA==

-----16

and flows into pin ONE.

This current canbe set usinga current source or simplyby a resistor of the appropriate value connected between pin ONE and V

ONE

1.5

----------------

16.25

. In this example the resistor would be

CC(R)

92.3 kΩ==

The reference current at pin ZERO in this example is

ZERO

30× 7.5˙µA==

-- 4

1.5

--------- -

7.5

and can be set using a resistor

200 kΩ==

The optical ZERO loop time constant and bandwidth can be estimated using the following formulae:

ZERO

= Hz[]

ZERO

The term η

40 10

---------------------------2πτ

---------------------------------------------------------------------------------------------------2π 40 10

LASER

12–

+×()

TZERO

ZERO

LASER

12–

+×()× 50× 103×

(dimensionless) in the above formulae is

50 10

×= s[]

----------------------

TZERO

LASER

the product of the two terms:

•ηEO is the electro-optical efficiency which accounts for

the steepness of the laser slope. It is the amount of the extra optical output power in W/A of modulation current optical output power.

• R is the monitor photodiode responsivity. It is the amount of the extra monitor photodiode current in A/W optical output power.

(7)

(8)

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

Example: A laser with an MPD has the following specifications: PO= 1 mW, Ith=25mA,ηEO= 30 mW/A, R = 500 mA/W. The term I current to switch-on the laser. If the laser operates just above the threshold level, it may be assumed that η around the optical ZERO level is 50% of ηEO around the optical ONE level, due to the decreasing slope near the threshold level.

Inthis example the resultingbandwidthfor the optical ONE regulation loop, without external capacitance, would be:

ONE

30 103–× 500× 103–×

--------------------------------------------------------------------2π 40× 10

× 80× 103×

The resulting bandwidth for the optical ZERO regulation loop, without external capacitance, would be:

ZERO

0.5 30× 103–× 500× 103–×

------------------------------------------------------------------------2π 40× 10

× 50× 103×

It is not necessary to add additional capacitance with this type of laser.

Monitoring the bias and modulation current

Although not recommended, the bias and modulation currentsgenerated by thelaserdriver can be monitoredby measuring the voltages on pins TZERO and TONE, respectively. The relations between these voltages and thecorresponding currents are given astransconductance values and are specified in Chapter “Characteristics”. The voltages on pins TZERO and TONE range from

1.4 to 3.4 V. The impedance connected at these pins should have an extremely high value. It is mandatory to use a CMOS buffer or an amplifier with an input impedance higher than 100 GΩ and an extremely low input leakage current (pA range).

Manual laser override

The automatic laser control function can be overridden by connecting voltage sources to pins TZERO and TONE to take direct control of, respectively, the bias current source and the modulation current source. The control voltages should be in the range from 1.4 to 3.4 V to sweep the

is the required threshold

12–

750 Hz≈=

600 Hz≈=

TZA3031AHL; TZA3031BHL;

TZA3031U

modulationcurrent through therange from 1 to 60 mA and the bias current through the rangefrom 1 to 90 mA. These current ranges are guaranteed. Depending on the temperature and manufacturing process spread, current values higher than the specified ranges can be achieved. However, bias and modulation currents in excess of the specified range are not supported and should be avoided.

Currents into or out pins TZERO and TONE in excess of 10 µA must be avoided to prevent damage of the circuit.

Automatic laser shut-down and laser slow start

The laser modulation and bias currents can be rapidly switched off when a HIGH-level (CMOS) is applied to pin ALS. This functionallows the circuit to be shut-down in the event of an optical system malfunction. A 25 kΩ pull-down resistor defaults the input of pin ALS to the non active state.

When a LOW-level is applied to pin ALS, the modulation and bias currentslowly increase to the desired values with the typical time constants of τ

ONE

and τ

This can be used as a laser slow start.

Bias alarm for TZA3031AHL

The bias current alarm circuit detects and flags whenever thebias current isoutside a predefinedrange. This feature can detect excessive bias current due to laser aging and lasermalfunctioning. The maximumpermittedbias current should be applied to pin ALARMHI with an attenuation ratio of 1500; the minimum to pin ALARMLO with an attenuation ratio of 300.

Like the reference currents for the laser current control loop, the alarm reference currents can be set using external resistors connected between pins ALARMHI or ALARMLO and V

. The resistor values can be

CC(R)

calculated using the following formulae:

ALARMHI

ALARMLO

1.5 1500×

= Ω[]

--------------------------- I

BIAS(max)

1.5 300×

= Ω[]

-----------------------I

BIAS(min)

, respectively.

ZERO

(9)

(10)

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

Example: The following referencecurrents are required to limit the bias current range between 6 and 90 mA:

ALARMLO

ALARMHI

The corresponding resistor values are:

ALARMHI

ALARMLO

If the alarm condition is true, the voltage on pin ALARM goesto HIGH-level (CMOS).Thissignal could beused,for example, to disable the laser driver by driving pin ALS (a latch is needed in between to prevent oscillation).

Loop mode for TZA3031BHL

In the loop mode the total system application can be tested. It allows for uninhibited optical transmission through the fibre front-end (from the photodiode through thetransimpedance stage and the dataandclockrecovery unit, to the laser driver and via the laser back to the fibre). It should be noted that the optical receiver used in conjunction with the TZA3031BHL must havea loop mode output in order to complete the test loop.

AHIGH-levelon pin ENL selects the loopmode.Bydefault pin ENL is pulled at LOW-level by a 25 kΩ pull-down resistor.

Power supply connections

Three separate supply domains [labelled V and V high-current outputs, the PECL or CML inputs, and the monitor photodiode current input. The three domains should be individually filtered before being connected to a central VCC (see Figs 6 and 7). All supply pins need to be connected. The supply levels should be equal and in accordance with the values specified in Chapter “Characteristics”.

6 mA

------------- 300

90 mA

---------------- 1500

1.5 V 1500×

---------------------------------

1.5 V 300×

------------------------------

] are used to provide isolation between the

CC(R)

90 mA

6 mA

20 µA==

60 µA==

and

25 kΩ==

and

75 kΩ==

CC(B)

, V

CC(G)

TZA3031AHL; TZA3031BHL;

TZA3031U

To maximize power supply isolation, the MPD cathode on the laser should be connected to V diode anode to V

. It is recommended to provide the

CC(B)

laser anode with a separate decoupling capacitor C11. The inverted laser driver modulation pin LAQ is generally

not used. To properly balance the output stage, an equalizationnetwork Z1 with an impedance comparableto the laser is connected between pin LAQ and V

All external components should be SMD, preferably of size 0603 or smaller. The components must be mounted as close tothe IC aspossible. It is specially recommended to mount the following components very close to the IC:

• Power supply decoupling capacitors C2, C4 and C6

• Input matching network on pins DIN and DINQ

• Capacitor C7 on pin MONIN

• Output matching network Z1 at the unused output.

Grounding bare die

In addition to the separate VCC domains, the bare die contains three corresponding ground domains. Isolation between the GND domains is limited due to the finite substrate conductance.

Mountthe die ona,preferably large and highlyconductive, grounded die pad. All pads GND have to be bonded to the die pad. The external ground is thus optimally combined with the die ground, avoiding ground bouncing problems.

Layout recommendations

Layout recommendations for the TZA3031AHL and TZA3031BHL can be found in application note

Fiber optic transceiverboard STM1/4/8, OC3,12,24, FC/GE”

and the laser

CC(G)

CC(B)

“AN98090

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

amb

stg

supply voltage −0.5 +6 V DC voltage on

pin MONIN 1.3 VCC+ 0.5 V pins TONE and TZERO −0.5 VCC+ 0.5 V pin BGAP −0.5 +3.2 V pin BIAS −0.5 VCC+ 0.5 V pins LA and LAQ 1.3 VCC+ 0.5 V pin ALS −0.5 VCC+ 0.5 V pins ONE and ZERO −0.5 VCC+ 0.5 V pins DIN and DINQ −0.5 VCC+ 0.5 V pin ALARM TZA3031AHL −0.5 VCC+ 0.5 V pins ALARMHI and ALARMLO TZA3031AHL −0.5 VCC+ 0.5 V pins DLOOP and DLOOPQ TZA3031BHL −0.5 VCC+ 0.5 V pin ENL TZA3031BHL −0.5 VCC+ 0.5 V

DC current on

pin MONIN −0.5 +2.5 mA pins TONE and TZERO −0.5 +0.5 mA pin BGAP −2.0 +2.5 mA pin BIAS −0.5 +200 mA pins LA and LAQ −0.5 +100 mA pin ALS −0.5 +0.5 mA pins ONE and ZERO −0.5 +0.5 mA pins DIN and DINQ −0.5 +0.5 mA pin ALARM TZA3031AHL −0.5 +10 mA pins ALARMHI and ALARMLO TZA3031AHL −0.5 +0.5 mA pins DLOOP and DLOOPQ TZA3031BHL −0.5 +0.5 mA

pin ENL TZA3031BHL −0.5 +0.5 mA ambient temperature −40 +85 °C junction temperature −40 +125 °C storage temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R R

th(j-s) th(j-c)

thermal resistance from junction to solder point 15 K/W thermal resistance from junction to case 23 K/W

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

CHARACTERISTICS

VCC=5V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

tot

Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3031BHL); see Fig.5 V

i(p-p)

I(min)

I(max)

CMOS inputs: pin ALS (and pin ENL on TZA3031BHL)

pd(ALS)

pd(ENL)

CMOS output: pin ALARM (on TZA3031AHL)

Monitor photodiode input: pin MONIN

MPD

Control loop reference currents: pins ONE and ZERO

ref(ONE)

ref(ZERO)

Control loop time constants: pins TONE and TZERO

TONE

m(TONE)

TZERO

m(TZERO)

= −40 to +85 °C; all voltages measured with respect to GND.

amb

supply voltage 4.75 5 5.25 V supply current note 1 − 65 90 mA total power dissipation note 2 − 430 810 mW

input voltage

differential 100 250 800 mV

(peak-to-peak value) input offset voltage −25 − +25 mV minimum input voltage V maximum input voltage −−V input impedance for low frequencies;

− 2 −− V

CC(R)

+ 0.25 V

CC(R)

81012kΩ

single-ended

LOW-level input voltage −−1.5 V HIGH-level input voltage 3.5 −− V internal pull-down resistance on

21 25.5 30 kΩ

pin ALS internal pull-down resistance on

15 25 35 kΩ

pin ENL

LOW-level output voltage IOH= −200 µA0 − 0.2 V HIGH-level output voltage IOH= 200 µA 4.8 − 5V

DC input voltage 1.5 1.8 2.0 V monitor photodiode current laser optical ‘0’ 24 − 260 µA

laser optical ‘1’ 96 − 1040 µA

monitor photodiode capacitance note 3 30 − 50 pF

reference current on pin ONE note 4 6 − 65 µA reference voltage on pin ONE referenced to V

CC(R)

−1.55 −1.5 −1.45 V reference current on pin ZERO note 4 6 − 65 µA reference voltage on pin ZERO referenced to V

CC(R)

−1.55 −1.5 −1.45 V

voltage on pin TONE ﬂoating output 1.4 − 3.4 V transconductance of pin TONE note 5 − 100 − mA/V voltage on pin TZERO ﬂoating output 1.4 − 3.4 V transconductance of pin TZERO note 6 − 160 − mA/V

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Laser modulation outputs: pins LA and LAQ

O(off)

o(p-p)

Bias current output: pin BIAS

O(off)

res(off)

Alarm threshold inputs: pin ALARMHI and ALARMLO (on TZA3031AHL)

ref(ALARMLO)

ref(ALARMHI)

modulation output current note 7 3 − 60 mA output current during laser

−−10 µA shutdown

output voltage 2 − 5V current rise time note 8 − 120 300 ps current fall time note 8 − 120 300 ps intrinsic electrical output jitter

note 9 −−50 mUI

(peak-to-peak value)

output current note 10 2.5 − 90 mA output current during laser

−−10 µA shutdown

response time after laser shutdown

= 90 mA;

BIAS

note 11

−−1 µs

output voltage 1 − 5V

threshold reference current on

lower alarm; note 12 6 − 65 µA

pin ALARMLO optical reference voltage on

referenced to V

CC(R)

−1.55 −1.5 −1.45 V pin ALARMLO

threshold reference current on pin ALARMHI

optical reference voltage on

higher alarm; note 12

referenced to V

CC(R)

6 − 65 µA

−1.55 −1.5 −1.45 V pin ALARMHI

Notes

1. Remarks to the supply current: a) The value for ICC does not include the modulation and bias currents through pins LA, LAQ and BIAS. b) Typical value for ICC refers to, but does not include, I c) The maximum value of ICC refers to, but does not include, I

= 30 mA and I

MOD

BIAS

= 60 mA and I

= 45 mA.

= 90 mA.

BIAS

2. Remarks to the power dissipation: a) The value for P b) The typical value for P

= 1 V and typical process parameters.

BIAS

c) The maximumvaluefor P

= 1 V and worst case process parameters.

BIAS

includes the modulation and bias currents through pins LA, LAQ and BIAS.

tot

is the on-chip dissipation with I

tot

isthe on-chip dissipation withI

tot

= 30 mA and VLA=V

MOD

=60mAandVLA=V

MOD

LAQ

= 2 V, I

=2V,I

= 45 mA and

BIAS

=90mAand

BIAS

3. The minimum value of the capacitance on pin MONIN is required to prevent instability.

4. The reference currents can be set using a resistor connected between pins ONE or ZERO and V

(see Section “Automatic laser control”). The corresponding ZERO level MPD current range is from 24 to 260 µA. The ONE level MPD current range is from 96 to 1040 µA.

5. The specified transconductance is the ratio between the modulation current at pins LA or LAQ and the voltage at pin TONE, under small signal conditions.

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Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

6. The specified transconductance is the ratio between the biasing current at pin BIAS and the voltage at pin TZERO, under small signal conditions.

7. The values indicate the guaranteed interval, i.e. the lowest attainable output current is always lower than 3 mA and the highest output current always higher than 60 mA.

8. The voltage rise and fall times can be larger, due to capacitive effects. Specifications are guaranteed by design and characterization. Each device is tested at full operating speed to guarantee the RF functionality.

9. Measured in a frequency band from 250 kHz to 5 MHz, according to The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification is guaranteed by design.

10. The values indicate the guaranteed interval, i.e. the lowest output current always is less than 2.5 mA and the highest output current is always more than 90 mA.

11. The response time is defined as the delay between the onset of theramp on pin ALS (at 10% of the HIGH-level) and the extinction of the bias current (at 10% of the original value).

12. The reference currents can be set by using a resistor between V see Section “Bias alarm for TZA3031AHL” for detailed information. The corresponding range of low-bias thresholds is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA.

“ITU-T Recommendation G.813”

and pins ALARMLO or ALARMHI;

CC(R)

handbook, full pagewidth

I(max)

I(min)

CC(R)

i(p-p)

MGK274

Fig.5 Logic level symbol definitions for data inputs.

1999 Aug 24 13

Page 14

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

APPLICATION INFORMATION

handbook, full pagewidth

C1 1 µF

C3 1 µF

C5 1 µF

(1)

C10

(2)

(3)

22 nF

C2 22 nF

C4 22 nF

C6 22 nF

MONIN

TONE

TZERO

BGAP

CC(G)

CC(B)

19, 20, 27, 30

CC(R)

TZA3031AHL

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

15 13 12

GND BIAS LA LAQ

R5 18 Ω

data inputs

normal mode

(CML/PECL compatible)

ALS

DINQ29DIN28ALARM

31710

(6)

TZA3031AHL; TZA3031BHL;

TZA3031U

(4)

26 23

21 18

ZERO ONE

ALARMLO ALARMHI

(4)R3(5)

(5)

C11

MPD

(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”). (2) C8 enhances modulation control loop time constant (optional). (3) C9 enhances bias control loop time constant (optional). (4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”). (5) R3 and R4 are used for minimum and maximum bias currents setting (see Section “Bias alarm for TZA3031AHL”). (6) Z1 is required for balancing the output stage (see Section “Power supply connections”).

laser

Fig.6 Application diagram showing the TZA3031AHL configured for 155 Mbits/s (STM1/OC3).

1999 Aug 24 14

MBK848

Page 15

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

handbook, full pagewidth

C1 1 µF

C3 1 µF

C5 1 µF

(1)

C10

(2)

(3)

22 nF

C2 22 nF

C4 22 nF

C6 22 nF

MONIN

TONE

TZERO

BGAP

CC(G)

CC(B)

18, 21,

27, 30

CC(R)

TZA3031BHL

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

15 13 12

GND BIAS LA LAQ

R3 18 Ω

data inputs

normal mode

(CML/PECL compatible)

ALS

DINQ29DIN28ENL

31710

(5)

TZA3031AHL; TZA3031BHL;

TZA3031U

(4)

26 23

20 19

ZERO ONE

DLOOPQ DLOOP

loop mode inputs

(CML/PECL compatible)

C11

MPD

(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”). (2) C8 enhances modulation control loop time constant (optional). (3) C9 enhances bias control loop time constant (optional). (4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”). (5) Z1 is required for balancing the output stage (see Section “Power supply connections”).

laser

Fig.7 Application diagram showing the TZA3031BHL configured for 155 Mbits/s (STM1/OC3).

1999 Aug 24 15

MBK847

Page 16

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

BONDING PADS

SYMBOL PAD

COORDINATES

GND 1 −664 −910 MONIN 2 −524 −910 GND 3 −367 −910 IGM 4 −227 −910 TONE 5 −70 −910 TZERO 6 +87 −910 BGAP 7 +244 −910 V

CC(G)

8 +384 −910

9 +524 −910 GND 10 +664 −910 GND 11 +910 −630 V V

CC(B) CC(B)

12 +910 −490

13 +910 −350 GND 14 +910 −210 LAQ 15 +910 −70 LA 16 +910 +70 GND 17 +910 +210 BIAS 18 +910 +350 GND 19 +910 +490 GND 20 +910 +630 GND 21 +681 +910 ALARMHI 22 +541 +910

(1)

TZA3031AHL; TZA3031BHL;

TZA3031U

SYMBOL PAD

COORDINATES

CC(R)

23 +384 +910 DLOOP 24 +227 +910 DLOOPQ 25 +87 +910 V

CC(R)

26 −70 +910 ALARMLO 27 −210 +910 ONE 28 −367 +910 ZERO 29 −524 +910 GND 30 −681 +910 GND 31 −910 +681 ALARM 32 −910 +541 ENL 33 −910 +384 V

CC(R)

34 −910 +227 DIN 35 −910 +70 DINQ 36 −910 −70 V

CC(R)

37 −910 −227 ALS 38 −910 −367 GND 39 −910 −551 GND 40 −910 −664

Note

1. All x and y coordinates represent the position of the centreof the pad inµmwith respect to thecentreof the die (see Fig.8).

(1)

1999 Aug 24 16

Page 17

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

handbook, full pagewidth

ALARMLO

ZERO

GND

ALARM

ENL

CC(R)

DIN

DINQ

CC(R)

ALS

GND GND

GND

31 32

35 36

37 38

39 40

ONE

TZA3031U

2 mm

0 y

CC(R)

(1)

DLOOP

DLOOPQ

TZA3031AHL; TZA3031BHL;

TZA3031U

CC(R)

GND

ALARMHI

21222324252627282930

GND GND

19 18

BIAS

GND

LAQ

GND V

CC(B)

GND

2 mm

(1)

12 5 6 78910

MBK849

(1) Typical value.

GND

MONIN

IGM

TONE

BGAP

TZERO

CC(G)

GND

Fig.8 Bonding pad locations of TZA3031U.

Table 1 Physical characteristics of bare die

PARAMETER VALUE

Glass passivation 2.1 µm PSG (PhosphoSilicate Glass) on top of 0.7 µm silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm) Metallization 1.2 µm AlCu (1% Cu) Thickness 380 µm nominal Size 2.000 × 2.000 mm (4.000 mm2) Backing silicon; electrically connected to GND potential through substrate contacts Attache temperature <430 °C; recommended die attache is glue Attache time <15 s

1999 Aug 24 17

Page 18

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

PACKAGE OUTLINE

LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm

TZA3031U

SOT401-1

pin 1 index

DIMENSIONS (mm are the original dimensions)

max.

1.60

1A2A3bp

0.15

1.5

1.3

0.25

0.05

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

w M

0.27

0.18

0.17

0.12

0 2.5 5 mm

(1) (1)(1)

5.1

4.9

w M

v M

scale

(1)

eHELL

5.1

4.9

0.5

7.15

6.85

7.15

1.0

6.85

0.75

0.45

detail X

0.2

0.12 0.1

0.95

0.55

Zywv θ

0.95

0.55

(A )

OUTLINE VERSION

SOT401-1

IEC JEDEC EIAJ

REFERENCES

1999 Aug 24 18

EUROPEAN

PROJECTION

ISSUE DATE

95-12-19 97-08-04

Page 19

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

SOLDERING Introduction to soldering surface mount packages

Thistextgives a very briefinsighttoa complex technology. A more in-depth account of soldering ICs can be found in our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011). There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering isnot always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used.

Reﬂow soldering

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied tothe printed-circuit board byscreen printing, stencilling or pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating,soldering and cooling) vary between 100 and 200 seconds depending on heating method.

Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended for surface mount devices () or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

To overcome these problems the double-wave soldering method was specifically developed.

TZA3031AHL; TZA3031BHL;

TZA3031U

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

• Forpackageswith leads on four sides,thefootprintmust

be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners.

During placement andbefore soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

1999 Aug 24 19

Page 20

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

Suitability of surface mount IC packages for wave and reﬂow soldering methods

PACKAGE

BGA, SQFP not suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(3)

PLCC LQFP, QFP, TQFP not recommended SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to orlarger than0.65 mm; it is

, SO, SOJ suitable suitable

temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

The package footprint must incorporate solder thieves downstream and at the side corners.

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

WAVE REFLOW

(2)

(3)(4) (5)

SOLDERING METHOD

(1)

suitable

suitable suitable

1999 Aug 24 20

Page 21

Philips Semiconductors Preliminary speciﬁcation

SDH/SONET STM1/OC3 laser drivers

TZA3031AHL; TZA3031BHL;

TZA3031U

DEFINITIONS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used.

1999 Aug 24 21

Page 22

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

1999

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 465012/02/pp24 Date of release: 1999 Aug 24 Document order number: 9397 750 05283