Datasheet TZA3023U, TZA3023T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TZA3023

SDH/SONET STM4/OC12
transimpedance amplifier

Objective specification
File under Integrated Circuits, IC19

1997 Oct 17

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12

TZA3023

transimpedance amplifier

FEATURES

• Low equivalent input noise, typically 3.5 pA/√Hz

• Wide dynamic range, typically 1 µA to 1.5 mA

• Differential transimpedance of 21 kΩ

• Wide bandwidth: 600 MHz

• Differential outputs

• On-chip AGC (Automatic Gain Control)

• No external components required

• Single supply voltage from 3.0 to 5.5 V

• Bias voltage for PIN diode.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

TZA3023T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TZA3023U naked die die in waffle pack carriers; die dimensions 0.960 × 1.210 mm −

APPLICATIONS

• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high speed data networks

• Wideband RF gain block.

DESCRIPTION

The TZA3023 is a low-noise transimpedance amplifier with
AGC designed to be used in STM4/OC12 fibre optic links.
It amplifies the current generated by a photo detector (PIN
diode or avalanche photodiode) and converts it to a
differential output voltage.

PACKAGE

BLOCK DIAGRAM

handbook, full pagewidth

DREF

(1)

V

CC

8

2

kΩ

1

3IPhoto

CONTROL

TZA3023T

2, 4, 5

3

GND

AGC

peak detector

GAIN

A1

low noise

amplifier single ended to

differential converter

BIASING

7 OUTQ
6 OUT

MGK918

(1) AGC analog I/O is only available on the TZA3023U (pad 13).

Fig.1 Block diagram.

1997 Oct 17 2

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12

TZA3023

transimpedance amplifier

PINNING

SYMBOL PIN TYPE DESCRIPTION

DREF 1 analog output bias voltage for PIN diode (V
GND 2 ground ground
IPhoto 3 analog input current input; anode of PIN diode should be connected to this pin; DC bias

level of 800 mV, one diode voltage above ground
GND 4 ground ground
GND 5 ground ground
OUT 6 CML output data output; OUT goes HIGH when current flows into IPhoto (pin 3)
OUTQ 7 CML output compliment of OUT (pin6)
V

CC

8 supply supply voltage

); cathode should be connected to this pin

CCA

handbook, halfpage

DREF

1
2

TZA3023T

3

IPhoto

4

GND

MGK917

Fig.2 Pin configuration.

V

8

CC

OUTQGND

7

OUT

6

GND

5

1997 Oct 17 3

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12
transimpedance amplifier

BONDING PAD LOCATIONS

handbook, full pagewidth

DREF

GND

IPhoto

2

36

TZA3023

18

V

CC

AGC

12

13

1

2

TZA3023U

3

4

5

67

11

10

9

8

7

OUTQ

OUT

GND

45

Fig.3 TZA3023U bonding diagram; pad 13 (AGC) is not bonded.

PAD CENTRE LOCATIONS

COORDINATES

(1)

SYMBOL PAD

xy

DREF 1 95 881
GND 2 95 618
GND 3 95 473
IPhoto 4 95 285
GND 5 215 95
GND 6 360 95
GND 7 549 95
GND 8 691 95

1997 Oct 17 4

GND

MGK919

COORDINATES

(1)

SYMBOL PAD

xy

OUT 9 785 501
OUTQ 10 785 641
V

CC

V

CC

11 567 1055
12 424 1055

AGC 13 259 1055

Note

1. All coordinates are referenced, in µm, to the bottom
left-hand corner of the die.

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12

TZA3023

transimpedance amplifier

FUNCTIONAL DESCRIPTION

The TZA3023 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM4/OC12
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of the TZA3023 are high receiver
sensitivity and wide dynamic range.

High receiver sensitivity is achieved by minimizing noise in
the transimpedance amplifier. The signal current
generated by a PIN diode can vary between 1 µAto1mA
peak-to-peak. An AGC loop is implemented to make it
possible to handle such a wide dynamic range. The AGC
loop increases the dynamic range of the receiver by

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

V

n

supply voltage −0.5 +5.5 V
DC voltage

pin 3/pad 4: IPhoto −0.5 +1 V
pins 6 and 7/pads 9 and 10: OUT and OUTQ −0.5 VCC+ 0.5 V
pad 13: AGC (TZA3023U only) −0.5 V
pin 1/pad 1: DREF −0.5 V

I

n

DC current

pin 3/pad 4: IPhoto −1 +2.5 mA
pins 6 and 7/pads 9 and 10: OUT and OUTQ −15 +15 mA
pad 13: AGC (TZA3023U only) −0.2 +0.2 mA
pin 1/pad 1: DREF −2.5 +2.5 mA

P

tot

T

stg

T

j

T

amb

total power dissipation − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −40 +85 °C

reducing the feedback resistance of the preamplifier.
The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC. The AGC
voltage can be monitored at pad 13 on the naked die
(TZA3023U). Pad 13 is not bonded in the packaged device
(TZA3023T). This pad can be left unconnected during
normal operation. It can also be used to force an external
AGC voltage. If pad 13 (AGC) is connected to GND, the
internal AGC loop is disabled and the receiver gain is at a
maximum. The maximum input current is then about
50 µA. A differential amplifier converts the output of the
preamplifier to a differential voltage.

+ 0.5 V

CC

+ 0.5 V

CC

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R
R

th(j-s)
th(j-a)

thermal resistance from junction to solder point tbf K/W
thermal resistance from junction to ambient tbf K/W

1997 Oct 17 5

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12

TZA3023

transimpedance amplifier

CHARACTERISTICS

For typical values T
temperature range and process spread.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

P

tot

T

j

T

amb

R

tr

supply voltage 3 5 5.5 V
supply current ac coupled; RL=50Ω− 28 50 mA
total power dissipation VCC=5V − 140 275 mW

junction temperature −40 − +110 °C
ambient temperature −40 +25 +85 °C
small-signal transresistance

of the receiver

f

−3dB(h)

I

i(IPhoto)(p-p)

high frequency −3 dB point Ci= 0.7 pF − 600 − MHz
input current on pin IPhoto

(peak-to-peak value)

V

bias(IPhoto)

input bias voltage on pin
IPhoto

I

n(tot)

total integrated RMS noise
current over bandwidth
(referenced to input)

∆R

/∆t AGC loop constant − 1 − dB/ms

tr

PSRR power supply rejection ratio

at V

=25°C and VCC= 5 V; minimum and maximum values are valid over the entire ambient

amb

V

= 3.3 V − 95 180 mW

CC

measured differentially;

− 42 − kΩ

RL= ∞
measured differentially;

ac coupled; R

=50Ω

L

− 21 − kΩ

VCC=5V −300 +4 +1500 µA
V

= 3.3 V −300 +4 +500 µA

CC

720 800 970 mV

note 1

∆f = 311 MHz − 55 − nA
∆f = 450 MHz − 80 − nA
∆f = 622 MHz − 120 − nA

measured differentially;

CC

note 2

f = 100 kHz to 10 MHz − 12µA/V
f = 10 MHz to 100 MHz − 25µA/V
f = 100 MHz to 1 GHz − 5 100 µA/V

1997 Oct 17 6

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12

TZA3023

transimpedance amplifier

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Data outputs: OUT and OUTQ

V

O(CM)

common mode output
voltage

V

o(se)(p-p)

single-ended output voltage
(peak-to-peak value)

V

OO

differential output offset
voltage

R

o

single ended output
resistance

t

r

t

f

rise time 20% to 80% − 200 300 ps
fall time 80% to 20% − 140 250 ps

Notes

1. All I

measurements were made with an input capacitance of Ci= 1.2 pF. This was comprised of 0.7 pF for the

n(tot)

photodiode itself, with 0.3 pF allowed for the PCB layout and 0.2 pF intrinsic to the package.

2. PSRR is defined as the ratio of the equivalent current change at the input (∆I
∆I

PSRR

=

--------------------

IPhoto

∆V

CC

For example, a +1 mV disturbance on V

ac coupled; RL=50Ω VCC− 1.65 VCC− 1.57 VCC− 1.4 V

ac coupled; RL=50Ω 150 200 260 mV

−30 − +30 mV

DC tested 42 50 58 Ω

) to a change in supply voltage:

IPhoto

at 10 MHz will typically add an extra 2 nA to the photodiode current.

CC

APPLICATION INFORMATION

handbook, full pagewidth

DREF

1

IPhoto

3

2, 4, 5

22 nF

GND

3

10 µH

V

CC

8

TZA3023T

680 nF

V

CC

7

6

OUTQ

OUT

Zo = 50 Ω

Zo = 50 Ω

100 nF

100 nF

R3
50 Ω

R4
50 Ω

MGK921

Fig.4 Application diagram.

1997 Oct 17 7

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12
transimpedance amplifier

handbook, full pagewidth

V

O(max)

V

OQH

V

OH

V

OQL

V

OL

V

O(min)

CML/PECL OUTPUT

V

OO

V

CC

V

o (p-p)

MGK885

TZA3023

handbook, full pagewidth

Fig.5 Logic level symbol definitions for data outputs OUT and OUTQ.

V

CC

600 Ω 600 Ω

2 mA

30 Ω
30 Ω

4.5 mA

4.5 mA

MGK922

V

OUTQ

V

OUT

Fig.6 Data output buffer.

1997 Oct 17 8

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12
transimpedance amplifier

PACKAGE OUTLINE

SO8: plastic small outline package; 8 leads; body width 3.9 mm

D

c

y

Z

8

5

TZA3023

SOT96-1

E

H

E

A

X

v M

A

A

pin 1 index

1

e

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

1.75

0.069

A

1

0.25

0.10

0.010

0.004

A2A3b

1.45

0.25

1.25

0.057

0.01

0.049

p

0.49

0.36

0.019

0.014

0.25

0.19

0.0100

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

4

w M

b

p

0 2.5 5 mm

scale

(1)E(2)

cD

5.0

4.8

0.20

0.19

eHELLpQZywv θ

4.0

1.27

3.8

0.16

0.050

0.15

2

A

6.2

5.8

0.244

0.228

Q

3

A

θ

0.25 0.10.25

0.010.010.041 0.004

(1)

0.7

0.3

0.028

0.012

o

8

o

0

L

p

L

0.7

0.6

0.028

0.024

(A )

1

detail X

1.0

1.05

0.4

0.039

0.016

OUTLINE
VERSION

SOT96-1

IEC JEDEC EIAJ

076E03S MS-012AA

REFERENCES

1997 Oct 17 9

EUROPEAN

PROJECTION

ISSUE DATE

95-02-04
97-05-22

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12
transimpedance amplifier

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

(order code 9398 652 90011).

TZA3023

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Oct 17 10

Philips Semiconductors Objective specification

SDH/SONET STM4/OC12

TZA3023

transimpedance amplifier

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 17 11

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 427027/300/01/pp12 Date of release: 1997 Oct 17 Document order number: 9397 750 02781