Datasheet TZA3023U-C3, TZA3023T-C3, TZA3023T-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1997 Oct 17
File under Integrated Circuits, IC19

2000 Mar 29

INTEGRATED CIRCUITS

TZA3023

SDH/SONET STM4/OC12
transimpedance amplifier

2000 Mar 29 2

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

FEATURES

• Wide dynamic input range from 1 µA to 1.5 mA

• Low equivalent input noise of 3.5 pA/√Hz (typical)

• Differential transimpedance of 21 kΩ

• Wide bandwidth from DC to 600 MHz

• Differential outputs

• On-chip Automatic Gain Control (AGC)

• No external components required

• Single supply voltage from 3.0 to 5.5 V

• Bias voltage for PIN diode

• Pin compatible with SA5223.

APPLICATIONS

• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high-speed data networks

• Wideband RF gain block.

DESCRIPTION

TheTZA3023isalow-noisetransimpedanceamplifierwith
AGC designed to be used in STM4/OC12 fibre optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TZA3023T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TZA3023U − bare die in waffle pack carriers; die dimensions 1.030 × 1.300 mm −

handbook, full pagewidth

GAIN

CONTROL

BIASING

A1

1 (1)

8 (11, 12)

DREF

3 (4)IPhoto

low noise

amplifier single-ended to

differential converter

V

CC

2, 4, 5 (2, 3, 5, 6, 7, 8)

GND

AGC

(1)

peak detector

TZA3023

6 (9) OUT

7 (10) OUTQ

MGK918

2

kΩ

(13)

Fig.1 Block diagram.

The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O is only available on the TZA3023U (pad 13).

2000 Mar 29 3

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

PINNING

SYMBOL

PIN

TZA3023T

PAD

TZA3023U

TYPE DESCRIPTION

DREF 1 1 analog output bias voltage for PIN diode; cathode should be connected to

this pin
GND 2 2, 3 ground ground
IPhoto 3 4 analog input current input; anode of PIN diode should be connected to this

pin; DC bias level of 800 mV, one diode voltage aboveground
GND 4 5, 6 ground ground
GND 5 7, 8 ground ground
OUT 6 9 output data output; pin OUT goes HIGH when current flows into

pin IPhoto
OUTQ 7 10 output data output; compliment of pin OUT
V

CC

8 11, 12 supply supply voltage

AGC − 13 input/output AGC analog I/O

handbook, halfpage

1
2
3
4

8
7
6
5

MGK917

TZA3023T

V

CC

OUTQGND
OUT
GND

GND

IPhoto

DREF

Fig.2 Pin configuration.

2000 Mar 29 4

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

FUNCTIONAL DESCRIPTION

The TZA3023 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM4/OC12
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of theTZA3023 are highreceiver
sensitivity and wide dynamic range.

Highreceiver sensitivity is achieved by minimizing noisein
the transimpedance amplifier. The signal current
generated by a PIN diode can vary between
1 µA to 1.5 mA (p-p). An AGC loop is implemented to
make it possible to handle such a wide dynamic range.
TheAGCloop increases the dynamic rangeofthe receiver
by reducing the feedback resistance of the preamplifier.

The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC. The AGC
voltage can be monitored at pad 13 on the bare die
(TZA3023U).Pad 13isnotbondedin the packaged device
(TZA3023T). This pad can be left unconnected during
normal operation. It can also be used to force an external
AGC voltage. If pad 13 is connected to GND, the internal
AGC loop is disabled and the receiver gain is at a
maximum. The maximum input current is then
approximately 50 µA.

A differential amplifier converts the single-ended output of
the preamplifier to a differential output voltage (see Fig.3).

handbook, full pagewidth

MGK922

600 Ω 600 Ω

30 Ω

V

CC

V

OUTQ

V

OUT

4.5 mA

2 mA

4.5 mA

30 Ω

Fig.3 Data output buffer.

handbook, full pagewidth

MGK885

V

OO

V

O(max)

V

OQH

V

OH

V

OQL

V

OL

V

O(min)

V

o (p-p)

V

CC

CML/PECL OUTPUT

Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ.

2000 Mar 29 5

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

PIN diode bias voltage DREF

The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, bandwidth and the Power
Supply Rejection Ratio (PSRR) of a transimpedance
amplifier. The total capacitance at the input pin is critical to
obtain the highest sensitivity. It should be kept to a
minimum by reducing the capacitor of the PIN diode and
the parasitics around the input pin. The PIN diode should
be placed very close to the IC to reduce the parasitics.
Because the capacitance ofthe PIN diode dependson the
reverse voltage across it, the reverse voltage should be
chosen as high as possible.

The PIN diode can be connected to the input in two ways
as shown in Figs 5 and 6. In Fig.5 the PIN diode is
connectedbetweenDREFandIPhoto.Pin DREFprovides
an easy bias voltage for the PIN diode. The voltage at
DREF is derived from VCC by a low-pass filter. The
low-passfilterconsistingof the internal resistor R1, C1 and
the external capacitor C2 rejects the supply voltage noise.
The external capacitor C2 should be equal or larger then
1 nF for a high PSRR.

The reverse voltage across the PIN diode is 4.2 V
(5 − 0.8 V) for 5 V supply or 2.5 V (3.3 − 0.8 V) for 3.3 V
supply.

The DC voltage at DREFdecreases with increasingsignal
levels. Consequently the reverse voltage across the
PIN diode will also decrease with increasing signal levels.
This can be explained with an example. When the
PIN diode delivers a peak-to-peak current of 1 mA, the
average DC current will be 0.5 mA. This DC current is
delivered by VCC through the internal resistor R1 of 2 kΩ
which will cause a voltage drop of 1 V across the resistor
and the reverse voltage across the PIN diode will be
reduced by 1 V.

It is preferable to connect the cathode of the PIN diode to
a higher voltage then VCC when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected.Whenanegativesupplyvoltageisavailable,
the configuration in Fig.6 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to Fig.5. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.

MCD900

R1

2 kΩ

C1

10 pF

C2

1 nF

V

CC

I

i

4

8

TZA3023

7

IPhoto

DREF

Fig.5 ThePIN diodeconnected between the input

and pin DREF.

MCD901

R1

2 kΩ

C1

10 pF

V

CC

I

i

4

8

TZA3023

7

IPhoto

negative supply voltage

DREF

Fig.6 ThePIN diodeconnected between the input

and a negative supply voltage.

2000 Mar 29 6

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

AGC

TZA3023 transimpedance amplifier can handle input
currents from 0.5 µA to 1.5 mA. This means a dynamic
range of 72 dB. At low input currents, the transimpedance
must be high to get enough output voltage, and the noise
should be low enough to guaranty minimum bit error rate.
At high input currents however, the transimpedance
should be low to avoid pulse width distortion. This means
that the gain of the amplifier has to vary depending on the
input signal level to handle such a wide dynamic range.
This is achieved in the TZA3023 by implementing an
Automatic Gain Control (AGC) loop.

TheAGCloop consists of a peak detector, aholdcapacitor
and a gain control circuit. The peak amplitude of the signal
isdetected by the peakdetectorand it is storedonthe hold
capacitor.Thevoltage over the hold capacitor iscompared
to a threshold level. The threshold level is set to
10 µA (p-p) input current. AGC becomes active only for
input signals larger than the threshold level.

It is disabled for smaller signals. The transimpedance is
then at its maximum value (21 kΩ differential).

When the AGC is active, the feedback resistor of the
transimpedance amplifier is reduced to keep the output
voltage constant. The transimpedance is regulated from
21 kΩ at low currents (I < 10 µA) to 800 Ω at high currents
(I < 500 µA). Above 500 µA the transimpedance is at its
minimum and can not be reduced further but the front-end
remains linear until input currents of 1.5 mA.

The upper part of Fig.7 shows the output voltages of the
TZA3023 (OUT and OUTQ) as a function of the DC input
current. In the lower part, the difference of both voltages is
shown. It can be seen from the figure that the output
changes linearly up to 10 µA input current where AGC
becomes active. From this point on, AGC tries to keep the
differential output voltage constant around 200 mV for
medium range input currents (input currents <200 µA).
The AGC can not regulate any more above 600 µA input
current, and the output voltage rises again with the input
current.

handbook, full pagewidth

0

600

400

200

MCD914

110

2

10

(1)

(2)
(3)

Ii (µA)

V

o

(V)

V

o(dif)

(mV)

10

3

10

4

1

1.2

1.6

1.4

1.8

VCC = 3 V

V

OUT

V

OUTQ

Fig.7 AGC characteristics.

V

o(dif)=VOUT

− V

OUTQ

.
(1) VCC=3V.
(2) VCC= 3.3 V.
(3) VCC=5V.

2000 Mar 29 7

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

HANDLING

Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the VCC and GND pads first, the
remaining pads may then be bonded to their external connections in any order.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

supply voltage −0.5 +6 V

V

n

DC voltage

pin 3/pad 4: IPhoto −0.5 +1 V
pins 6 and 7/pads 9 and 10: OUT and OUTQ −0.5 V

CC

+ 0.5 V

pad 13: AGC (TZA3023U only) −0.5 V

CC

+ 0.5 V

pin 1/pad 1: DREF −0.5 V

CC

+ 0.5 V

I

n

DC current

pin 3/pad 4: IPhoto −1 +2.5 mA
pins 6 and 7/pads 9 and 10: OUT and OUTQ −15 +15 mA
pad 13: AGC (TZA3023U only) −0.2 +0.2 mA
pin 1/pad 1: DREF −2.5 +2.5 mA

P

tot

total power dissipation − 300 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 125 °C

T

amb

ambient temperature −40 +85 °C

SYMBOL PARAMETER VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient 160 K/W

2000 Mar 29 8

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

CHARACTERISTICS

Typical values at T

amb

=25°C and VCC= 5 V; minimum and maximum values are valid over the entire ambient

temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

supply voltage 3 5 5.5 V

I

CC

supply current VCC= 5 V; ACcoupled;

R

L

=50Ω

23 28 45 mA

V

CC

= 3.3V; ACcoupled;

RL=50Ω

20 28 42 mA

P

tot

total power dissipation VCC=5V − 140 248 mW

V

CC

= 3.3 V − 95 152 mW

T

j

junction temperature −40 − +125 °C

T

amb

ambient temperature −40 +25 +85 °C

R

tr

differential small-signal
transresistance of the
receiver

VCC= 5 V; ACcoupled;
RL=50Ω

17.5 21 25 kΩ

V

CC

= 3.3 V; AC coupled;

RL=50Ω

16 19.5 25 kΩ

f

−3dB(h)

high frequency −3 dB point VCC=5V; Ci= 0.7 pF 450 580 750 MHz

V

CC

= 3.3 V; Ci= 0.7 pF 440 520 600 MHz

PSRR power supply rejection ratio measured differentially;

note 1

f = 100 kHz to 10 MHz − 12µA/V
f = 10 to 100 MHz − 25µA/V
f = 100 MHz to 1 GHz − 5 100 µA/V

Bias voltage: pin DREF

R

DREF

resistance between
pins DREF and V

CC

DC tested 1680 2000 2320 Ω

Input: pin IPhoto

V

bias(IPhoto)

input bias voltage on
pin IPhoto

720 800 970 mV

I

i(IPhoto)(p-p)

input current on pin IPhoto
(peak-to-peak value)

VCC= 5 V; note 2 −1500 +4 +1500 µA
V

CC

= 3.3 V; note 2 −1000 +4 +1000 µA

R

i

small-signal input resistance fi= 1 MHz; input current

<2 µA (p-p)

− 95 −Ω

I

n(tot)

total integrated RMS noise
current over bandwidth
(referenced to input)

note 3

∆f = 311 MHz − 55 − nA
∆f = 450 MHz − 80 − nA
∆f = 622 MHz − 120 − nA

2000 Mar 29 9

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

Notes

1. PSRR is defined as the ratio of the equivalent current change at the input (∆I

IPhoto

) to a change in supply voltage:

For example, a + 4 mV disturbance on V

CC

at 10 MHz will typically add an extra 8 nA to the photodiode current. The
external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with an
external capacitor of 1 nF. The PSSR is guaranteed by design.

2. The Pulse Width Distortion (PWD) is <5% over the whole input current range. The PWD is defined as:
where T is the clock period. The PWD is measured differentially with

PRBS pattern of 10

−23

.

3. All I

n(tot)

measurements were made with an input capacitance of Ci= 1.2 pF. This was comprised of 0.7 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise
performance is measured differentially.

Data outputs: pins OUT and OUTQ

V

o(cm)

common mode output voltage AC coupled; RL=50Ω VCC− 2VCC− 1.7 VCC− 1.4 V

V

o(se)(p-p)

single-ended output voltage
(peak-to-peak value)

AC coupled; RL=50Ω;
input current 100 µA (p-p)

75 200 330 mV

V

OO

differential output offset
voltage

−100 0 +100 mV

R

o(se)

single-ended output
resistance

DC tested 40 50 62 Ω

t

r

, t

f

rise time, fall time VCC= 5 V; 20% to 80%;

input current <10 µA (p-p)

400 510 700 ps

V

CC

= 3.3 V;20% to 80%;

input current <10 µA (p-p)

450 550 700 ps

Automatic gain control loop: pad AGC

I

th(AGC)

AGC threshold current referred to the peak input

current; tested at 10 MHz

− 10 −µA

t

att(AGC)

AGC attack time − 5 −µs

t

decay(AGC)

AGC decay time − 10 − ms

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

PSRR

I

IPhoto

∆

V

CC

∆

------------------- -

=

PWD

pulse width

T

----------------------------- -

1–





100%×=

2000 Mar 29 10

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

TYPICAL PERFORMANCE CHARACTERISTICS

handbook, halfpage

−40 0

(2)

40

Tj (°C)

I

CC

(mA)

120

40

20

36

80

32

28

24

MCD908

(3)

(1)

Fig.8 Supply current as a function of the junction

temperature.

(1) VCC=5V.
(2) VCC= 3.3 V.
(3) VCC=3V.

handbook, halfpage

34

I

CC

(mA)

VCC (V)

56

31.4

31.0

30.2

29.8

30.6

MCD909

Fig.9 Supply current as a function of the supply

voltage.

handbook, halfpage

34

V

i

(mV)

VCC (V)

56

808

806

802

800

804

MCD910

Fig.10 Input voltage as a function of the supply

voltage.

handbook, halfpage

−40 0

(1)

(2)

(3)

40

Tj (°C)

V

i

(mV)

120

900

660

740

820

80

MCD911

Fig.11 Input voltage as a function of the junction

temperature.

(1) VCC=5V.
(2) VCC= 3.3 V.
(3) VCC=3V.

2000 Mar 29 11

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

handbook, halfpage

3

(1)

(2)

4

VCC (V)

V

o(cm)

(V)

56

1.686

1.680

1.668

1.662

1.674

MCD912

Fig.12 Common mode voltage at the output as a

function of the supply voltage.

(1) VCC− V

OUT

.

(2) VCC− V

OUTQ

.

handbook, halfpage

−40 0

(2)

(1)

40

Tj (°C)

V

o(cm)

(V)

120

1.85

1.55

1.65

1.75

80

MCD913

Fig.13 The common mode voltageat the output as

a function of the junction temperature.

VCC= 3.3 V.
(1) VCC− V

OUT

.

(2) VCC− V

OUTQ

.

2000 Mar 29 12

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

APPLICATION AND TEST INFORMATION

handbook, full pagewidth

2

MCD898

1

8

V

CC

DREF

3

IPhoto

GND

4

GND5GND

TZA3023T

7

OUTQ

6

OUT

50 Ω50 Ω

Zo = 50 Ω

Zo = 50 Ω

22 nF

1 nF

680 nF

10 µH

V

P

100 nF

100 nF

Fig.14 Application diagram.

2000 Mar 29 13

Philips Semiconductors Product specification

SDH/SONET STM4/OC12

transimpedance amplifier

TZA3023

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in

white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

k

, full pagewidth

MCD899

12

DOUTQ

6

OUT

7

OUTQ

13

DOUT

1 kΩ

50 Ω 50 Ω

10 nF

10 nF

100 nF

8 pF

noise filter:
1-pole, 400 MHz

100 Ω

61 kΩ

TZA3023T TZA3044

SUB JAM STQ STAGND

8

V

CC

V

CC

6

V

CCA

16

RSET7CF15V

ref

14

V

CCD

DGND

data out

level-detect
status

VCC − 2 V

5

DINQ

4

DIN

3

IPhoto

1

DREF

22 nF

680 nF

100 nF

1 nF

7.5
pF

1.1
pF

16.4 nH

16.4 nH

optional noise filter:
3-pole, 470 MHz Bessel

(1)

(1) (1)

2

GND4GND5GND

3 1 8 9 10 11

Fig.15 STM4/OC12 receiver using the TZA3023T and postamplifier TZA3044.

(1) Ferrite bead e.g. Murata BLM10A700S.

2000 Mar 29 14

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

Test circuits

handbook, full pagewidth

MCD902

1 kΩ

51 Ω

Zo = 50 Ω

Zo = 50 Ω

Zo = 50 Ω

IPhoto

OUT

OUTQ

10 nF

TRD

V

CC

100 nF

TR

1

SAMPLING

OSCILLOSCOPE/

TDR/TDT

2

PORT 1 PORT 2

NETWORK ANALYZER

ZT = s21.(R + Zi) . 2 R = 1 kΩ, Zi = 100 Ω

S-PARAMETER TEST SET

100 nF

TZA3023

OM5803

PATTERN

GENERATOR

223-1 PRBS

C IN

D

C
C

Fig.16 Electrical test circuit.

2000 Mar 29 15

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

handbook, full pagewidth

MCD903

Zo = 50 Ω

IPhoto

PIN

DREF

DIN

DINQ

0 dBm/1300

Laser

IN OUT

OPTICAL

INPUT

OUT

OUTQ

TRD

V

CC

100 nF

22 nF

10 nF

10%90%

DatainClock

in

ERROR DETECTOR

TR

1
2

100 nF

TZA3023

TZA3001

OM5804OM5802

PATTERN

GENERATOR

LASER DRIVER

OPTICAL ATTENUATOR

LIGHTWAVE MULTIMETER

622.080 MHz

2

23

-1 PRBS

C IN

D

C
C

−9.54 dBm

SAMPLING

OSCILLOSCOPE/

TDR/TDT

Fig.17 Optical test circuit.

2000 Mar 29 16

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

handbook, full pagewidth

MCD904

Fig.18 Differential output with −30 dBm optical input power [input current of 1.63 µA (p-p)].

handbook, full pagewidth

MCD905

Fig.19 Differential output with −20 dBm optical input power [input current of 16.3 µA (p-p)].

2000 Mar 29 17

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

handbook, full pagewidth

MCD906

Fig.20 Differential output with −10 dBm optical input power [input current of 163 µA (p-p)].

handbook, full pagewidth

MCD907

Fig.21 Differential output with −2 dBm optical input power [input current of 1030 µA (p-p)].

2000 Mar 29 18

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

BONDING PAD LOCATIONS

Note

1. All coordinates are referenced, in µm, to the bottom
left-hand corner of the die.

SYMBOL PAD

COORDINATES

(1)

xy

DREF 1 95 881
GND 2 95 618
GND 3 95 473
IPhoto 4 95 285
GND 5 215 95
GND 6 360 95
GND 7 549 95
GND 8 691 95
OUT 9 785 501
OUTQ 10 785 641
V

CC

11 567 1055

V

CC

12 424 1055

AGC 13 259 1055

TZA3023U

1

10

9

2

3

4

5

0

x

y

0

13

12

11

67

8

1300

µm

1030

µm

DREF

IPhoto

GND

GND

OUTQ

OUT

MCD897

GND

GND

AGC

VCCV

CC

GND

GND

Fig.22 Bonding pad locations of the TZA3023U.

Physical characteristics of the bare die

PARAMETER VALUE

Glass passivation 2.1 µm PSG (PhosphoSilicate Glass) on top of 0.65 µm oxynitride
Bonding pad dimension minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
Metallization 1.22 µm W/AlCu/TiW
Thickness 380 µm nominal
Size 1.03 × 1.30 mm (1.34 mm

2

)
Backing silicon; electrically connected to GND potential through substrate contacts
Attach temperature <440 °C; recommended die attach is glue
Attach time <15 s

2000 Mar 29 19

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

PACKAGE OUTLINE

UNIT

A

max.

A1A2A

3

b

p

cD

(1)E(2)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8

1.27

6.2

5.8

1.05

0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1.0

0.4

SOT96-1

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

4

5

pin 1 index

1

8

y

076E03 MS-012

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15

0.050

0.244

0.228

0.028

0.024

0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

97-05-22
99-12-27

2000 Mar 29 20

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

SOLDERING
Introduction to soldering surface mount packages

Thistextgives a very brief insight toacomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wavesoldering is notalways suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board by screenprinting, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemountdevices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Mar 29 21

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE

SOLDERING METHOD

WAVE REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA not suitable suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO not recommended

(5)

suitable

2000 Mar 29 22

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS

PRODUCT

STATUS

DEFINITIONS

(1)

Objective specification Development This data sheet contains the design target or goal specifications for

product development. Specification may change in any manner without
notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditionsabovethosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofany of these products, conveys no licence ortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
periodof ninety (90) daysfrom the dateof Philips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips
Semiconductorshas no control of thirdparty procedures in
the sawing, handling, packing or assembly of the die.
Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or
systems after third party sawing, handling, packing or
assembly of the die. It is the responsibility of the customer
to test and qualify their application in which the die is used.

2000 Mar 29 23

Philips Semiconductors Product specification

SDH/SONET STM4/OC12
transimpedance amplifier

TZA3023

NOTES

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000

69

Philips Semiconductors – a w orldwide compan y

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

Printed in The Netherlands 403510/200/02/pp24 Date of release: 2000 Mar 29 Document order number: 9397 750 06816