Datasheet TZA1015 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TZA1015

Data amplifier and laser supply
circuit for CD and read-only optical
systems (HDALAS)

Preliminary specification
File under Integrated Circuits, IC01

1997 May 16

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

FEATURES

• Six input buffer amplifiers with low-pass filtering and
virtually no offset

• Universal photodiode IC interface using internal
conversion resistors

• RF data amplifier with wide bandwidth designed for data
rates up to a maximum of 30×

• Programmable RF gain for CD-A/V, CD-R, CD-R/W and
CD-ROM applications

• Programmable RF bandwidth for optimal playability

• Radial error signal for fast track counting

• Programmable RF/Fast Track Count (FTC) gain for

optimal dynamic range

• Fully automatic laser control including stabilization and
on/off switch plus a separate supply for power efficiency

• Automatic monitor diode polarity selection

• Adjustable laser bandwidth and laser switch-on current

slope using external capacitor

• Protection circuit to prevent laser damage due to supply
voltage dip

• Optimized interconnection between data amplifier and
Philips’ digital signal processor family (CD7, ACE and
MACE)

• Wide supply voltage range

• Wide temperature range

• Low power consumption.

The device contains 6 transimpedance amplifiers to
amplify and filter the focus and radial photo diode voltage
input signals. The preamplifier forms a versatile,
programmable interface from voltage output CD
mechanisms to the Philips’ digital signal processor family.

The dynamic range of this preamplifier/processor
combination can be optimized for the LF servo and RF
data paths. The servo channel gain is set by the ADC
range of the processor. The RF data channel can be
programmed in the TZA1015 preamplifier.
The programmable RF bandwidth allows this device to be
used in CD-A/V applications or CD-R, CD-R/W and
CD-ROM applications with a data rate up to a maximum of
30×. The RF and LF gain can be adapted for CD-A/V,
CD-R and CD-ROM discs or CD-R/W discs by means of a
gain switch. In addition to this gain switch the RF gain is
programmable to guarantee optimal playability. In order to
enable minimal access time the TZA1015 generates a
Fast Track Count signal which enables the decoder (ACE
or MACE) to count the number of tracks during a track
jump.

The device can accommodate astigmatic, single Foucault
and double Foucault detectors and can be used with all
laser and N- or P-sub monitor diodes. The Automatic
Power Control circuit (APC) will maintain control over the
laser diode current. With an on-chip reference voltage
generator, a constant and stabilized output power is
ensured independent of ageing. A separate power supply
connection allows the internal power dissipation to be
reduced by connecting a low voltage supply.

TZA1015

GENERAL DESCRIPTION

The TZA1015 is a data amplifier and laser supply circuit for
3-beam pick-up detectors found in a wide range of CD and
read-only optical systems.

ORDERING INFORMATION

TYPE

NUMBER

TZA1015T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1

1997 May 16 2

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

DD(RF,LF)

V

DD(LASER)

LF amplifiers

I

OS

B

(−3 dB)

RF amplifier

B

(−3 dB)

t

d(f)(RF)

Laser supply

I

o(LASER)(min)

V

i(mon)

Temperature range

T

oper

T

stg

supply voltage 4.5 5.0 5.5 V
laser supply voltage 3 − 5.5 V

channel matching −− 1 %FS

−3 dB bandwidth 65 90 115 kHz

−3 dB bandwidth programmable;

GARF = open-circuit

7.5 10 12.5 MHz
15 20 25 MHz
37 50 63 MHz

RF flatness delay −− 0.4 ns

minimum laser output current V

DD(LASER)

=3V −− 100 mA

monitor input voltage

N-type monitor − 0.150 − V
P-type monitor − V

DD(RF,LF)

− 0.150 − V

operating temperature 0 − 90 °C
storage temperature −65 − +150 °C

1997 May 16 3

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

BLOCK DIAGRAM

handbook, full pagewidth

6

D1

D2

D3

D4

S5

S6

7

8

9

10

11

−

+

+

−

+

+

−

+

+

−

+

+

−

+

+

−

+

+

−

+

TZA1015

22

O1

21

O2

20

O3

19

O4

18

O5

17

O6

15

FTC

GARF

GSE

RFBWS

V

COM

MON

25

RFP

26

28
27
1

13

V

DD(LF)

RFN

14

V

ref

TZA1015

V/I

5

V

DD(RF)

V

GAP

V

DD(LF)

(1)

V/I

V

DD(L)

3

GND PWRON

2423

16

12

V/I

MGK356

2

LD

4

CFIL

(1) Band-gap reference voltage.

Fig.1 Block diagram.

1997 May 16 4

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

PINNING

SYMBOL PIN DESCRIPTION

RFBWS 1 RF amplifier bandwidth select
LD 2 current output to the laser diode
V

DD(L)

CFIL 4 external filter capacitor
MON 5 laser monitor diode input
D1 6 input photo diode amplifier 1 (central)
D2 7 input photo diode amplifier 2 (central)
D3 8 input photo diode amplifier 3 (central)
D4 9 input photo diode amplifier 4 (central)
S5 10 input photo diode amplifier 5

S6 11 input photo diode amplifier 6

V

DD(LF)

V

COM

V

ref

FTC 15 fast track count amplifier output
PWRON 16 power on/off switch (V

O6 17 output photo diode amplifier 6
O5 18 output photo diode amplifier 5
O4 19 output photo diode amplifier 4
O3 20 output photo diode amplifier 3
O2 21 output photo diode amplifier 2
O1 22 output photo diode amplifier 1
V

DD(RF)

GND 24 ground
RFP 25 positive output RF data amplifier
RFN 26 negative output RF data amplifier
GSE 27 gain select for CD, CD-R, CD-R/W;

GARF 28 gain adjust for RF and FTC amplifiers

3 laser supply voltage output

(satellite)

(satellite)

12 LF diode and FTC amplifier supply

voltage
13 common mode DC reference input
14 DC reference voltage for biasing of

Opto Electronic IC (OEIC)

bias

ref

generator always active)

23 RF amplifier supply voltage

RF and FTC amplifiers

handbook, halfpage

RFBWS

V

V

DD(LF)

DD(L)

CFIL

MON

V

COM

V

LD

D1
D2
D3
D4

S5
S6

ref

1
2
3
4
5
6
7
8

9
10
11
12
13

TZA1015

MGK355

Fig.2 Pin configuration.

TZA1015

GARF

28

GSE

27

RFN

26

RFP

25

GND

24

V

23

DD(RF)

O1

22
21

O2
O3

20

O4

19

O5

18

O6

17

PWRON

16
1514

FTC

1997 May 16 5

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

CHARACTERISTICS

V

DD(LF)=VDD(RF)=VDD(LASER)

RFBWS = HIGH; DC input voltages at pins V
I

DD(LASER)(d)

= 50 mA; C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

DD(RF,LF)

V

DD(LASER)

I

DD(LF)

I

DD(RF)

I

DD(LASER)(d)

supply voltage 4.5 5.0 5.5 V
laser supply voltage 3 − 5.5 V
LF supply current − 13 − mA
RF supply current − 20 − mA
laser diode supply

current

I

q

quiescent supply
current

Input voltages

V

i(D1-D4,S5,S6)

input signal voltage
range (with respect
to V

COM

V

I(CM)

common mode DC
reference input
voltage range

= 5.0 V; T

= 1 nF; unless otherwise specified. Diode input voltages all with respect to V

CFIL

=25°C; PWRON = HIGH; GSE = LOW; GARF = open-circuit;

amb

, D1 to D4, S5 and S6 =1⁄2VDD; output voltage at pins O1 to O6 = 0 V;

COM

− 50 100 mA

PWRON = LOW −− 5.9 mA

all inputs;

0 − 0.6 V

GSE = LOW

)

all inputs;

0 − 0.15 V

GSE = HIGH

1.6 − V

DD(RF,LF)

.

COM

− 2.2 V

LF diode amplifiers

Z

CONV

conversion
impedance

central diodes,
D1 to D4

satellite diodes,
S5 and S6

I

o(LF)

output current
range

central diodes,
O1 to O4

satellite diodes,
O5 and O6

V

O(LF)

DC output voltage
range central and
satellite diodes

Z

i

input impedance

central diodes − 1.8 − pF
satellite diodes − 1.1 − pF

GSE = LOW 41 47 54 kΩ
GSE = HIGH 11.0 12.7 15.0 kΩ
GSE = LOW 80 92 104 kΩ
GSE = HIGH 21.0 24.5 28 kΩ
note 1

0 − 12 µA

0 − 6 µA

−0.2 − V

DD(RF,LF)

− 2.1 V

1997 May 16 6

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

OS

B

(−3 dB)

RF amplifier

V

O(RFP)

V

O(RFN)

V

o(RF)(dif)

V

o(RF)

Z

o(RF)

G

RF

t

d(f)(RF)

B

RF(−3 dB)

channel pair

note 2

matching

central diodes,
O1 to O4

satellite diodes,
O5 and O6

−3 dB bandwidth
central diodes,

D1 to D4
satellite diodes,

S5 and S6

DC output level
RFP

DC output level
RFN

differential RF

GSE = LOW or
HIGH;
V

i(D1 toD4)

=0V

GSE = LOW or
HIGH;
V

i(D1 to D4)

=0V

note 3 − 2 − V
output signal
(V

single-sided RF

o(RFP)

− V

o(RFN)

)

note 3 − 1 − V
output signal

RF output
impedance

RF path gain note 4

GSE = LOW 10 11 12 dB
GSE = HIGH 22 23 24 dB

RF flatness delay GSE = LOW or

HIGH; note 5

f < 5 MHz;
RFBWS = LOW

f < 10 MHz;
RFBWS =
open-circuit

f < 25 MHz;
RFBWS = HIGH

−3 dB bandwidth
(RF signal)

GSE = LOW or

HIGH

RFBWS = LOW 7.5 10 12.5 MHz
RFBWS =

open-circuit
RFBWS = HIGH 37 50 63 MHz

−1 − +1 %FS

−2 − +2 %FS

65 90 115 kHz

65 90 115 kHz

0.3 0.5 0.7 V

2.7 3.1 3.4 V

− 25 −Ω

−− 2.0 ns

−− 1.0 ns

−− 0.4 ns

15 20 25 MHz

1997 May 16 7

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

n(in-band)(rms)

V

O(FTC)

G

FTC

B

FTC(−3 dB)

Laser supply (APC)

I

o(LASER)(min)

V

i(mon)

V

o(LASER)

t

sw(on)(LASER)

I

i(mon)

in-band noise
(RMS value)

RFBWS = LOW − 1.0 − mV

RFBWS =

− 1.4 − mV

open-circuit

RFBWS = HIGH − 2.1 − mV
fast track count DC

output level

GSE = LOW or

HIGH; note 6

1.3 1.4 1.5 V

fast track count gain f = 100 kHz;

note 7

GSE = LOW 16 17.5 19 dB
GSE = HIGH 26.5 28 29.5 dB

fast track count

220 300 380 kHz

−3 dB bandwidth

minimum laser

−− 100 mA

output current
monitor input

voltage

N-type −10% 0.150 +10% V
P-type − V

laser output

I

o(LASER)

= 100 mA −− V

DD(RF,LF)

− 0.150 − V

DD(LASER)

− 1.2 V

voltage range
laser switch-on time − 3 − ms
monitor input

−− 100 nA

current

Control inputs

Z

i(pd)

pull-down input
impedance
(pin GSE)

Z

i(pu)

pull-up input
impedance
(pin PWRON)

V

IL

LOW-level input
voltage

pins GSE
and PWRON

pins GARF
and RFBWS

V

IH

HIGH-level input
voltage

pins GSE
and PWRON

pins GARF
and RFBWS

1997 May 16 8

− 150 − kΩ

− 150 − kΩ

−0.2 − V

V

DD(RF,LF)

--------------------------

3.3

−0.2 − +0.5 V

V

DD(RF,LF)

--------------------------

1.4

V

DD(RF,LF)

− V

− 0.5 − V

DD(RF,LF)

DD(RF,LF)

+ 0.2 V

+ 0.2 V

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

IL

LOW-level input
current (pins GARF
and RFBWS)

I

IH

HIGH-level input
current (pins GARF
and RFBWS)

voltage source

V

ref

V

O

I

O

DC output voltage −10% +10% V

output current
range

sink 1.5 −−mA
source −− −3mA

Z

O

DC output
impedance

Notes

1. The output current can be increased but does not match the default input range of the servo system.

2. Matching defined in % of FS output per channel pairs (O1 − O2), (O3 − O4), (S5 − S6), at1⁄3 and2⁄3 of full output
scale.

3. V

o(RFP)=Vo(RF)

4. Gain is defined as:

All inputs assumed to be equal: , where i = 1 to 4 and D means diode.

; V

o(RFN)

G

RF

= −V

.

o(RF)

V

oRFP()

log× 20

20

--------------------­V

iLF()

ΣV

=

i(Di)

---------------­4

V

i(LF)

−− 70 µA

−− −80 µA

V

DD(RF,LF)

------------------------- ­2

−− 30 Ω

V

oRFN()

log×==

--------------------- ­V

iLF()

5. See Figs 3, 4 and 5.

6. Voltage is based on 2 PN junctions and is temperature dependent.
V

7. Gain is defined as:

20

G

FTC

log×=

oFTC()

--------------------------------------------- ­V

–()

iS5()ViS6()

1997 May 16 9

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

12

handbook, halfpage

G

(dB)

11

10

9

8

7

−1

10

(1) Gain.
(2) Delay.

1

Definition of delay: delay

10

(1)

(2)

f (MHz)



--------- -



360

=

---------------- -

ϕ

f

MGK357

9.00
t

d

(ns)

8.75

8.50

8.25

8.00

7.75

2

10

12

handbook, halfpage

G

(dB)

11

10

9

8

7
10

(1) Gain.
(2) Delay.

−1

Definition of delay: delay

TZA1015

MGK358

14.5
t

d

(1)

(2)

1

10

f (MHz)

ϕ



--------- -



360

=

---------------- ­f

(ns)

14.0

13.5

13.0

12.5

12.0

2

10

Fig.3 Gain and delay for 50 MHz bandwidth.

12

handbook, halfpage

G

(dB)

11

10

9

8

7

−1

10

(1) Gain.
(2) Delay.

Definition of delay: delay

(2)

(1)

1

10

=

MGK359

f (MHz)

ϕ



--------- -



360

---------------- ­f

Fig.4 Gain and delay for 20 MHz bandwidth.

23

t

d

(ns)

21

19

17

15

13

2

10

Fig.5 Gain and delay for 10 MHz bandwidth.

1997 May 16 10

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

Table 1 Control inputs, conversion impedances and gain settings

NOMINAL LF V/I

PIN GSE PIN GARF

LOW LOW 47 kΩ 92 kΩ 7 14
LOW open-circuit 47 kΩ 92 kΩ 11 18
LOW HIGH 47 kΩ 92 kΩ 15 22
HIGH LOW 12.7 kΩ 24.5 kΩ 19 24
HIGH open-circuit 12.7 kΩ 24.5 kΩ 23 28
HIGH HIGH 12.7 kΩ 24.5 kΩ 27 32

Table 2 Control inputs and RF bandwidth

PIN RFBWS RF AMPLIFIER BANDWIDTH SPREAD (4 SIGMA)

LOW 10 MHz ±25%
open-circuit 20 MHz ±25%
HIGH 50 MHz ±25%

CONVERSION

(CENTRAL DIODES)

NOMINAL LF V/I

CONVERSION

(SATELLITE DIODES)

NOMINAL RF

GAIN (dB)

NOMINAL FTC

GAIN (dB)

1997 May 16 11

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

APPLICATION INFORMATION

The circuits shown in Figs 6 and 7 are applications for the TZA1015 (HDALAS) with the SAA7370A (CD7) or the
SAA7348 (ACE).

handbook, full pagewidth

OPIC

LD

MON

D1

D2

D3

D4

S5

S6

V

DD(RF, LF)

100 nF

V

ref

from

microprocessor

V

DD(LASER)

100

nF

1 nF

V

100 nF

RFBWS

LD

V

DD(L)

CFIL

MON

D1

D2

D3

D4

S5

S6

DD(LF)

V

COM

V

ref

(1)

1

2

3

4

5

6

7

TZA1015

8

9

10

11

12

13

(HDALAS)

28

27

26

25

24

23

22

21

20

19

18

17

16

1514

from

microprocessor

GARF

GSE

1 nF

RFN

1 nF

RFP

GND

V

DD(RF)

O1

O2

O3

O4

O5

O6

PWRON

FTC

to

microprocessor

R1

R2

(1)

100

100

nF

nF

22

(2)

(2)

(3)

kΩ

(2)

C1

V

DD(RF, LF)

100 nF

22
kΩ

ISLICE

I

ref

HFIN

HFREF

D1

D2

D3

D4

R1

R2

LDON

6 × 220 pF

14
18

15

17

3

SAA7370A

(CD7)

4

5

7

8

9

64

6

V

RL

MGK360

(1) Pins RFBWS, GARF and GSE can be microprocessor controlled but can also be fixed or switched by any other means.
(2) For recommended values per speed see Table 3.
(3) The FTC output is available for optional processing.

Fig.6 Application diagram with SAA7370A (CD7).

1997 May 16 12

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

handbook, full pagewidth

OPIC

LD

MON

D1

D2

D3

D4

S5

S6

V

DD(RF, LF)

100 nF

V

ref

100 nF

from

microprocessor

V

DD(LASER)

100

nF

1 nF

V

RFBWS

LD

V

DD(L)

CFIL

MON

D1

D2

D3

D4

S5

S6

DD(LF)

V

COM

V

ref

(1)

1

2

3

4

5

6

7

8

9

10

11

12

13

TZA1015

(HDALAS)

28

27

26

25

24

23

22

21

20

19

18

17

16

1514

from

microprocessor

GARF

GSE

RFN

68 nF

RFP

GND

V

DD(RF)

O1

O2

O3

O4

O5

O6

PWRON

FTC

22 nF

R1

(1)

(2)

100 nF

C1

V

DD(RF, LF)

47
kΩ

pF

(2)

5

HFIN

D1

D2

D3

D4

R1

R2

LDON

FTCH

FTCL

9

15

SAA7348

16

17

20

21

22

100

24

25

TZA1015

(ACE)

MGK361

(1) Pins RFBWS, GARF and GSE can be microprocessor controlled but can also be fixed or switched by any other means.
(2) For recommended values per speed see Table 4.

Fig.7 Application diagram with SAA7348 (ACE).

1997 May 16 13

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

Table 3 Recommended values of components per

speed for application diagram of Fig.6

N C1R1R2

1×47 pF 1 kΩ 1kΩ
2× 47 pF 470 Ω 470 Ω
4× 22 pF 470 Ω 470 Ω
8× 10 pF 470 Ω 470 Ω

10× 8.2 pF 470 Ω 470 Ω

Table 4 Recommended values of components per

16× 10 pF 470 Ω
18× 6.8 pF 470 Ω

TZA1015

speed for application diagram of Fig.7

NC1R1

1×100 pF 1 kΩ
2× 47 pF 1 kΩ
4× 22 pF 1 kΩ
8× 22 pF 470 Ω

1997 May 16 14

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

PACKAGE OUTLINE

SO28: plastic small outline package; 28 leads; body width 7.5 mm

D

c

y

Z

28

15

TZA1015

SOT136-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A2A

2.45

2.25

0.096

0.089

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

18.1

7.6

17.7

7.4

0.71

0.30

0.69

0.29

14

w M

b

p

scale

eHELLpQ

1.27

0.050

10.65

10.00

0.419

0.394

1.4

0.055

Q

A

2

0.043

0.016

A

1.1

0.4

L

p

L

0.25 0.1

0.01

(A )

1

detail X

1.1

0.25

1.0

0.043

0.01

0.039

A

3

θ

ywv θ

Z

0.9

0.4

0.035

0.004

0.016

o

8

o

0

OUTLINE
VERSION

SOT136-1

IEC JEDEC EIAJ

075E06 MS-013AE

REFERENCES

1997 May 16 15

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24
97-05-22

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

(order code 9398 652 90011).

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

TZA1015

1997 May 16 16

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and

TZA1015

read-only optical systems (HDALAS)

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 May 16 17

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

NOTES

TZA1015

1997 May 16 18

Philips Semiconductors Preliminary specification

Data amplifier and laser supply circuit for CD and
read-only optical systems (HDALAS)

NOTES

TZA1015

1997 May 16 19

Philips Semiconductors – a worldwide company

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Tel. [phone], Fax. [phone]
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20124 MILANO, Tel. [phone], Fax. [phone]
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Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

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Romania: see Italy
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Slovenia: see Italy
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Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 547027/00/01/pp20 Date of release: 1997 May 16 Document order number: 9397 750 01978