Datasheet TYN812T, TYN812, TYN1012, TYN1012T, TYN612T Datasheet (SGS Thomson Microelectronics)

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TN12, TS12 and TYNx12 Series
SENSITIVE & STANDARD 12A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Symbol Value Unit
I
T(RMS)
12 A
V
DRM/VRRM
600 to 1000 V
I
GT
0.2 to 15 mA
ABSOLUTE RATINGS(limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tc = 105°C12
A
IT
(AV)
Averageon-state current (180° conduction angle)
Tc = 105°C8
A
DPAK /
IPAK
D
PAK /
TO-220AB
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25°C
115 146
A
tp = 10 ms 110 140
I tI
t Value for fusing
tp = 10 ms Tj = 25°C60 98
A
S
dI/dt
Critical rate of rise of on-state current I
G
=2xIGT,tr≤100 ns
F = 60 Hz Tj = 125°C50A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C4 A
P
G(AV)
Averagegate power dissipation Tj = 125°C1 W
T
stg
Tj
Storage junction temperature range Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reversegate voltage (for TN12 & TYN) 5 V
G
A
K
A
A
K
G
DPAK (TS12-B) (TN12-B)
A
A
G
K
A
A
K
G
G
A
A
K
D2PAK
(TN12-G)
IPAK (TS12-H) (TN12-H)
TO-220AB
(TYN)
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SENSITIVE
STANDARD
THERMAL RESISTANCES
S = Copper surface under tab
Symbol Test Conditions TS1220 Unit
I
GT
VD=12V RL= 140
MAX. 200
µA
V
GT
MAX. 0.8 V
V
GD
VD=V
DRMRL
= 3.3 kRGK=1k
Tj = 125°C MIN.
0.1 V
V
RG
IRG=10µA
MIN.
8V
I
H
I
T
=50mA RGK=1k
MAX. 5 mA
I
L
IG= 1 mA RGK=1k
MAX. 6 mA
dV/dt
V
D
=67%V
DRMRGK
= 220
Tj = 125°C MIN. 5 V/µs
V
TM
ITM= 24 A tp = 380 µs
Tj = 25°C MAX. 1.6 V
V
t0
Threshold voltage Tj = 125°C MAX. 0.85 V
R
d
Dynamic resistance Tj = 125°CMAX. 30 m
I
DRM
I
RRM
V
DRM=VRRM
RGK= 220
Tj = 25°CMAX. 5 µA
Tj = 125°C2mA
Symbol Test Conditions
TN1215 TYN
Unit
B/H G x12T x12
I
GT
VD=12V RL=33
MIN. 2 0.5 2 mA
MAX. 15 5 15
V
GT
MAX. 1.3 V
V
GD
VD=V
DRMRL
= 3.3 k
Tj = 125°C MIN.
0.2 V
I
H
IT= 500 mA Gate open
MAX.40301530 mA
I
L
I
G
= 1.2 I
GT
MAX.
80 60 30 60
mA
dV/dt V
D
=67%V
DRM
Gate open
Tj = 125°C MIN. 200 40 200 V/µs
V
TM
ITM= 24A tp= 380 µs
Tj = 25°C
MAX.
1.6
V
V
t0
Threshold voltage Tj = 125°C
MAX.
0.85
V
R
d
Dynamic resistance Tj = 125°C
MAX.
30
m
I
DRM
I
RRM
V
DRM=VRRM
Tj = 25°C MAX. 5 µA
Tj = 125°C2
mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC)
1.3
°C/W
R
th(j-a)
Junction to ambient TO-220AB 60 °C/W
IPAK 100
S=1cm
D PAK
45
S = 0.5 cm
DPAK 70
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PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage (xxx)
Sensitivity
Package
600 V 700 V 800 V 1000 V
TN1215-xxxB X X 15 mA DPAK TN1215-xxxG X X X 15 mA
D
PAK TN1215-xxxH X X 15 mA IPAK TS1220-xxxB X X 0.2 mA DPAK TS1220-xxxH X X 0.2 mA IPAK TYNx12 X X X 30 mA TO-220AB TYNx12T X X X 15 mA TO-220AB
TN 12 15 - 600 B (-TR)
STANDARD SCR SERIES
CURRENT: 12A
SENSITIVITY: 15: 15mA
VOLTAGE:
600: 600V 800: 800V
1000: 1000V
PACKAGE: B: DPAK H: IPAK G: D PAK
2
PACKING MODE: Blank:Tube
-TR: D PAK& DPAK Tape& Reel
2
TS 12 20 - 600 B (-TR)
SENSITIVE SCR SERIES
CURRENT:12A
SENSITIVITY: 20: 200µA
VOLTAGE: 600: 600V 700: 700V
PACKAGE: B: DPAK H: IPAK
PACKING MODE: Blank:Tube
-TR: DPAKTape & Reel
TYN 6 12 T
STANDARD SCR SERIES
CURRENT:12A
SENSITIVITY: Blank: 30mA T:15mA
VOLTAGE:
600: 600V 800: 800V
1000: 1000V
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TN12, TS12 and TYNx12 Series
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OTHER INFORMATION
Note: x = voltage
Part Number Marking Weight Base Quantity Packing mode
TN1215-x00B TS1215x00 0.3 g 75 Tube TN1215-x00B-TR TS1215x00 0.3 g 2500 Tape & reel TN1215-x00G TS1215x00G 1.5 g 50 Tube TN1215-x00G-TR TS1215x00G 1.5 g 1000 Tape & reel TN1215-x00H TN1215x00 0.4 g 75 Tube TS1220-x00B TS1220x00 0.3 g 75 Tube TS1220-x00B-TR TS1220x00 0.3 g 2500 Tape & reel TS1220-x00H TS1220x00 0.4 g 75 Tube TYNx12 TYNx12 2.3 g 250 Bulk TYNx12RG TYNx12 2.3 g 50 Tube TYNx12T TYNx12T 2.3 g 250 Bulk TYNx12TRG TYNx12T 2.3 g 50 Tube
Fig. 1: Maximum average power dissipation versus average on-state current.
Fig. 2-1: Average and D.C. on-state current versus case temperature.
Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK and D2PAK).
Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration.
0123456789
0
1
2
3
4
5
6
7
8
9
10
11
12
P(W)
α = 180°
IT(av)(A)
360°
α
0 25 50 75 100 125
0
2
4
6
8
10
12
14
IT(av)(A)
DC
α = 180°
Tcase(°C)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IT(av)(A)
α = 180°
DC
D
2
PAK
DPAK
Tamb(°C)
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0
K = [Zth(j-c)/Rth(j-c)]
tp(s)
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Fig. 3-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board).
Fig. 4-1: Relative variation of gate trigger current, holding current and latching versus junction temperature for TS12 series.
Fig. 4-2: Relative variation of gate trigger current, holding current and latching current versus junction temperature for TN12 & TYN series.
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values) for TS12 series.
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS12 series.
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS12 series.
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
K = [Zth(j-a)/Rth(j-a)]
DPAK
TO-220AB
D
2
PAK
tp(s)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Rgk = 1k
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Tj(°C)
1E-2 1E-1 1E+0 1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IH[Rgk] / IH[Rgk = 1k]
Tj = 25°C
Rgk(k)
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
Rgk(k )
Tj = 125°C
VD = 0.67 x VDRM
0.1
1.0
10.0
0.0 0.2 0.4 0.6 0.8 1.0
1.2
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220
dV/dt[Cgk] / dV/dt [Rgk = 220 ]
Cgk(nF)
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Fig. 8: Surge peak on-state current versus number of cycles (TS12/TN12/TYN).
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I t.
Fig. 10: On-state characteristics (maximum values).
Fig. 11: T hermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) .
Tj = 125 °C
VD = 0.67 x VDRM
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0
1.2
Rgk(k )
0.01 0.10 1.00 10.00
10
100
1000
2000
ITSM(A),I
2
t(A2s)
Tjinitial=25°C
ITSM
I
2
t
dI/dt
limitattion
TYN/TN12
TS12
TS12
TYN/TN12
tp(ms)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
200
ITM(A)
Tj max.: Vto = 0.85V Rd = 30m
Tj = Tjmax.
Tj = 25°C
VTM(V)
0 2 4 6 8 101214161820
0
20
40
60
80
100
Rth(j-a)(°C/W)
DPAK
D
2
PAK
S(cm2)
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PACKAGE MECHANICAL DATA
DPAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039
R 0.2 typ. 0.007 typ.
V2 0° 8° 0° 8°
R
R
FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic)
6.7
6.7
3
3
1.61.6
2.32.3
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PACKAGE MECHANICAL DATA
D2PAK(Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2 0° 8° 0° 8°
A
C2
D
R
2.0 MIN. FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
FOOTPRINT DIMENSIONS (in millimeters) D2PAK(Plastic)
8.90
3.70
1.30
5.08
16.90
10.30
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PACKAGE MECHANICAL DATA
IPAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.035 B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039
V1 10° 10°
H
L
L1
G
B5
B V1
D
C
A1
A3
A
C2
B3
B6
L2
E
B2
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PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
e
c1
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