Page 1
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
-350V 30Ω -2.4V TP5335K1 TP5335NW
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
DS(ON)
(max) (max)
V
GS(th)
Order Number/Package
TO-236AB* Wafer
TP5335
Low Threshold
Product Objective Specification
Product marking for SOT-23
P3S❋
Where *=2-week alpha date code
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Analog switches
Power Management
Telecom switches
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Note: See Package Outline section for dimensions.
1
Gate Source
TO-236AB
(SOT-23)
top view
Page 2
TP5335
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
SOT-23 -85mA -400mA 0.36W 200 350 -85mA -400mA
*
ID (continuous) is limited by max rated Tj.
θ
jc
θ
ja
IDR*I
DRM
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
V
∆V
I
GSS
I
DSS
DSS
GS(th)
GS(th)
Drain-to-Source Breakdown Voltage -350 V VGS = 0V, ID = -100µA
Gate Threshold Voltage -1.0 -2.4 V VGS = VDS, ID = -1.0mA
Change in V
with Temperature 4.5 mV/°CV
GS(th)
Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current -10 µAV
-1.0 mA V
-5.0 nA VGS = 0V, VDS = -330V
I
D(ON)
ON-State Drain Current -200
-400 VGS = -10V, VDS = -25V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
with Temperature 1.7 %/°CV
DS(ON)
Forward Transconductance 125 m VDS = -25V, ID = -200mA
Input Capacitance 110
Common Source Output Capacitance 60 pF
Reverse Transfer Capacitance 22
Turn-ON Delay Time 20
Rise Time 15
Turn-OFF Delay Time 25
Fall Time 25
Diode Forward Voltage Drop -1.8 V VGS = 0V, ISD = -200mA
Reverse Recovery Time 800 ns VGS = 0V, ISD = -200mA
75 Ω VGS = -4.5V, ID = -150mA
30 Ω VGS = -10V, ID = -200mA
= V
GS
DS, ID
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
= 125°C
T
A
mA
VGS = -4.5V, VDS = -25V
= -10V, ID = -200mA
Ω
GS
VGS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ns ID = -150mA
= 25Ω
R
GEN
= -1.0mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
V
DD
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
2
PULSE
GENERATOR
R
gen
INPUT
1235 Bordeaux Drive, Sunnyvale, CA 94089
D.U.T.
OUTPUT
R
L
V
DD
11/12/01
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
Loading...