Datasheet TLE5207G, TLE5207 Datasheet (Siemens)

5-A DC Motor Driver with Inhibit

Overview

Features

• Output current ± 4 A (peak 5 A)

• Inhibit with very low quiescent current (typ. 20 µA)

• I/O error diagnostics

• Short-circuit proof

• Four-quadrant operation

• Integrated free-wheeling diodes

• Wide temperature range

TLE 5207

P-TO220-7-1

P-TO220-7-8

Type Ordering Code Package

TLE 5207 Q67000-A9295 P-TO220-7-1
TLE 5207G Q67006-A9296 P-TO220-7-8

Description

TLE 5207 is an integrated power bridge with inhibit feature and DMOS output stages for
driving DC motors.

This motor bridge is optimized for driving DC motors in reversible operation. The internal
protective circuitry in particular ensures that no crossover currents can occur.

Because the free-wheeling diodes are integrated, the external circuitry that is necessary
is restricted to the capacitors on the supply voltage.

The two control inputs have TTL/CMOS-compatible levels.

Semiconductor Group 1 1998-02-01

TLE 5207 TLE 5207G

4321567

TLE 5207

EF

Q1

Ι

GND

1

Ι

2

V

S

Q2

AEP01224

Figure 1 Pin Configuration (top view)

Pin Definitions and Functions
Pin Symbol Function

1Q1Output of channel 1; short-circuit proof, free-wheeling diodes

integrated for inductive loads

2EFError flag; TTL/CMOS-compatible output for error detection

(open drain)
3I1Control input 1; TTL/CMOS-compatible
4GNDGround; connected internally to cooling fin
5I2Control input 2; TTL/CMOS-compatible
6

V

S

Supply voltage; wire with capacitor matching load
7Q2Output of channel 2; Short-circuit proof, free-wheeling diodes

integrated for inductive loads

Semiconductor Group 2 1998-02-01

TLE 5207

Circuit Description

Input Circuit

The control inputs consist of TTL/CMOS-compatible Schmitt triggers with hysteresis.
Buffer amplifiers are driven by these stages and convert the logic signal into the
necessary form for driving the power output stages.In case of low potential at both inputs
the device is switched in inhibit-condition with very low current consumption.

Output Stages

The output stages from a switched H-bridge. Protective circuits make the outputs short­circuit proof from gro und up to a supply vol tage of 16 V. Positive and negative vo ltage
spikes, which occur when switching inductive loads, are limited by integrated power
diodes.

Monitoring and Protective Functions

An internal circuit ensures that all output transistors are turned-OFF if the supply voltage
is below the operating range.

Functional Truth Table
I1 I2 Q1 Q2 Comments

L L Z Z Device in inhibit condition with very low current

consumption; outputs in tristate condition (high impedance)
L H L H Motor turns clockwise
H L H L Motor turns counterclockwise
H H H H Motor brake; both high side transistors turned-ON

Notes for Output Stage
Symbol Value

L Low side transistor is turned-ON; High side transistor is turned-OFF
H High side transistor is turned-ON; Low side transistor is turned-OFF
Z High side transistor and Low side transistor are turned-OFF

A monitoring circuit for each output transistor detects whether the particular transistor is
active and in this case prevents the corresponding source transistor (sink transistor) from
conducting in sink operation (source operation). This effectively guards against
crossover currents. Pulse-width operation is possible up to a maximum switching
frequency of 1 kHz for any load.

Depending on the load current higher frequencies are possible.

Semiconductor Group 3 1998-02-01

TLE 5207

Protective Function

V

Various errors like short-circuit to +
result in turn-OFF of the output stages after a delay of 40 µs and setting of the error flag
EF to ground. Changing the inputs resets the error flag.

Output Shorted to Ground Detection

If a high side transistor is switched on and its output is shorted to ground, the output
current is limited to ty p 11 A. After a delay of 40 µs all outputs will be switched off and
the error flag EF is set to ground.

V

Output Shorted to +

and Overload Detection

S

An internal circuit detects if the current through the low side transistor is higher than 4 A
typ. In this case all outputs are turned-OFF after 40 µs and the error flag is set to ground.

, ground or across the load are detected. All faults

S

At a junction temperature higher than 160 °C the thermal shutdo wn turns-OFF, all fou r
output stages commonly and the error flag is set without a delay.

Diagnosis
Input Output Diagnosis EF

V

I1 I2 Q1 Q2 Shorted to GND Shorted to

Overload

S

L L Z Z Q1, Q2 Q1, Q2 –H
L H L H Q2 Q1 X L
H L H L Q1 Q2 X L
H H H H Q1, Q2 – – L

Semiconductor Group 4 1998-02-01

TLE 5207

Control Input 1

Control Input 2

3

5

Protection

Circuit 1

Protection

Circuit 1

Error Flag

2

Error

Flag

V

S

6

1

Output 1

7

Output 2

4
GND

AEB01225

Figure 2 Block Diagram

Semiconductor Group 5 1998-02-01

Electrical Characteristics

Absolute Maximum Ratings

T

= – 40 to 150 °C

j

Parameter Symbol Limit Values Unit Remarks

min. max.

Voltage

TLE 5207

Supply voltage
Supply voltage
Logic input voltage
Diagnostics output voltage

V

V

V

V

S
S
I1 , 2
EF

– 0.3
– 1
– 0.3
– 0.3

40
–
6
6

V
V
V
V

–

t < 500 ms; I
V

= 0 – 40 V

S

–

< 5 A

S

Current

Free-wheeling current
Output current

1)

Output current
Junction temperature

Storage temperature

I

F

I

Q

I

Q

T

j

T

stg

– 4
– 4
– 5

– 40
– 50

4
4
5

150
150

A
A
A

°C
°C

Tj ≤ 150 °C

–

t < 2 ms

–
–

Thermal Resistance

Junction-case
Junction-ambient

1)

During overload condition currrents higher than 5 A can dynamically occur, before the device shuts off, without
any damage to t he device.

R

R

th jC
th jA

–
–

4
65

K/W
K/W

–
–

Note: Stresses above those li sted here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.

Operating Range
Parameter Symbol Limit Values Unit Remarks

min. max.

Supply voltage
Logic input voltage
Switching frequency

1)

Junction temperature

1)

Depending on load, higher frequencies are possible.

V

V

f

T

S
I1 , 2

j

6
– 0.3
–
– 40

24
6
1
150

V
V
kHz
°C

–
–
–
–

Note: In the operating range the functions given in the circuit description are fulfilled.

Semiconductor Group 6 1998-02-01

TLE 5207

Characteristics

V

= 6 to 18 V; Tj = – 40 to 150 °C

S

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

General

Quiescent current
Quiescent current

Quiescent current

Turn-ON delay
Turn-OFF delay
Turn-ON time
Turn-OFF time
Undervoltage

Undervoltage

Logic

Control inputs
H-input voltage
L-input voltage

I
I

I

t
t
t
t
V

V

V
V

d1

d2

r

f

q

q

q

––5mAIL = 0 A

20 40 µA Tj = 25 °C

V

= VI2 = 0 V;

I1

V

= 12 V

S

80 µA VI1 = VI2 = 0 V;

V

= 12 V

S

––20µs Input to Output
––20µs Input to Output
––20µs IQ = 2.5 A; cf diagram
––20µs IQ = 2.5 A; cf diagram

S
S

IH
IL

–
–

2.8
–

5.5

4.5

–
–

5.9

5.5

–

1.2

V
V

V
V

I

C ON

I

C OFF

–
–

Hysteresis of input

V

∆

I

0.8 V –

voltage
H-input current

L-input current

I

I

I

I

0
– 2

25
0

50
2

µA
µA

V

= VIH = 2.8 V

I

V

= V

I

IL

Diagnostics output
Delay time
L-output voltage
Leakage current

t
V
I

d

FF

RD

20
–
–

40
–
–

75

0.4
10

µs
V
µA

–

I = 3 mA

–

Error detection
Switching threshold
Overcurrent
Overcurrent

Semiconductor Group 7 1998-02-01

V
I
I

EU
F1
F1

3.5
5

4.5

4.5
7
6

5.5
10
9

V
A
A

T

≤ 25 °C

j

25 °C

< T

≤ 150 °C

j

TLE 5207

Characteristics (cont’d)

V

= 6 to 18 V; Tj = – 40 to 150 °C

S

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Outputs

R
R
R
R

DSON
DSON
DSON
DSON

(Source)
(Source)
(Source)
(Source)

–
–
–
–

–
–
–
–

–
–
–
–

0.4

0.65

0.4

0.65

Ω
Ω
Ω
Ω

V

> 6 V; Tj = 25 °C

S

V

> 6 V; Tj = 150 °C

S

V

> 6 V; Tj = 25 °C

S

V

> 6 V; Tj = 150 °C

S

1)

1)

1)

1)

Diode forward
voltage

V

FU

–

–

1.5

V

I

= 3 A

F

Diode forward
voltage

1)

Values fo r RDSON ar e for t > 100 µs after applying + VS and t > 400 µs after changing from VI1 = VI2 = L to V
or VI2 = H.

V

FL

–

–

1.5

V

I

= 3 A

F

Note: The listed characteristic s are ensure d over the operating ra nge of the integ rated

circuit. Typical characte ristics speci fy mean val ues expected over the prod uction

T

spread. If not otherwise specified, typical characteristics apply at

= 25 °C and

j

the given supply voltage.

I1

Semiconductor Group 8 1998-02-01

TLE 5207

V

S

V

1Ι

V

Ι2

Figure 3 Test Circuit

Ι

Ι

Ι1

3

Ι

2Ι

5

4700 Fµ

Ι

,

q

S

63 V

6

TLE 5207

2

7

1

470 nF

Ι

Q1

Ι

Q2

R

L

V

EF

4

V

V

Q2

Q1

Ι

M

AES01569

Figure 4 Timing Diagram

Semiconductor Group 9 1998-02-01

+

V

= 12 V

S

Error
Flag

Control
Inputs

5 V

220 nF

Ω

2 k

*

2

3

5

6

TLE 5207

4

TLE 5207

1

M

7

*)Necessary for isolating supply voltage or interruption (eg 470 µF).

Figure 5 Application Circuit

AES01570

Semiconductor Group 10 1998-02-01

Diagrams

R

Resistance of Output Stage over

ON

Temperature

TLE 5207

Output Voltage on Diagnostics Output
versus Current

800

R

ON

m

600

400

200

Ω

0

0

6 V<

25 50

V

<18 V

S

max

typ

75

100 150

AED01305

˚C

T

Forward Current of Upper Free­Wheeling Diode versus Voltage

T

4

AED01306

= 150 ˚C

j

T

= 25 ˚C

j

mA

6

300

V

EF

mV

250

V

=12 V

S

200

150

100

50

0

0

12

j

3

Forward Current of Lower
Free-Wheeling Diode versus Voltage

4

Ι

F

A

3

= 150 ˚C

T

j

2

1

0

0.2

0.6

AED01303

= 25 ˚C

T

j

11.4

V

V

F

4

Ι

F

A

3

T

= 150 ˚C

2

0

1

0.2

j

0.6

AED01304

T

= 25 ˚C

j

1 1.4

V

V

F

Semiconductor Group 11 1998-02-01

TLE 5207

Overcurrent Threshold
versus Temperature

10

Ι

Q

A
8

typ

6

4

2

0

-40

040

min

AED01681

80 120 ˚C 160

T

j

Quiescent Current (device active)
versus Temperature

5

Ι

S

mA

4

3

2

1

0

-40

040

typ

80 120 ˚C 160

AED01682

T

j

Input Threshold
versus Temperature

3.5

V

Ι

V

3.0

2.5

2.0

1.5

1.0

-40

040

V

Ι

typ

typ

H

V

L

Ι

80 120 ˚C 160

AED01683

T

j

Switching Threshold
versus Temperature

5.5

V

F

V

5.0

4.5
typ

4.0

3.5

3.0

-40

040

V

EU

AED01684

80 120 ˚C 160

T

j

Semiconductor Group 12 1998-02-01

TLE 5207

E2

11 A

Ι

Q2

V

Q2

R

Short

11 Ax

V

sµ40

FL

EF

Figure 6 Timing Diagram for Output Shorted to Ground (E1 = High)

E1 = Low

AED01689

E2

20 A

Ι

Q1

V

S

V

Q1

R

Short

20 Ax

V

FU

sµ40

EF

Figure 7 Timing Diagram for Output Shorted to

V

(E1 = High)

S

E1 = Low

AED01686

Semiconductor Group 13 1998-02-01

TLE 5207

E2

Ι

Load

V

Q1

E1 = Low

Ι

F1

Overcurrent
Switching

Threshold

sµ40

V

S

x

Ι

ONRLoad

V

S

Ι

R

x

Load

ON

V

F

V

Q2

V

F

EF

AED01687

Figure 8 Timing Diagram for Overcurrent and E1 = E2 Inverted (Device not

inhibited)

Semiconductor Group 14 1998-02-01

Package Outlines

P-TO220-7-1

(Plastic Transistor Single Outline Package)

TLE 5207

+0.4

10

10.2

-0.2
+0.1

3.75

2.8

17

1.27

1)

+0.1

0.6

1) 0.75

1) 0.75

at dam bar (max 1.8 from body)

-0.15

im Dichtstegbereich (max 1.8 vom Körper)

-0.15

0.6
7x

4.6

-0.2

1 x 45˚

+0.1

1.27

±0.3

-0.2

±0.4

19.5 max

16

2.6

+0.1

0.4

±0.4

M

4.5

8.4

±0.4

8.8

15.4

±0.3

±0.3

8.6

10.2

GPT05108

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our

Data Book “Package Information”.

Dimensions in mm

Semiconductor Group 15 1998-02-01

P-TO220-7-8

(Plastic Transistor Single Outline Package)

10.2

8.0

10.1

0.6

TLE 5207

4.6

1.27

0.2

2.6

1)

8.8

3.5

1.5

1.27

6 x 1.27 = 7.62

1) shear and punch direction burr free surface

0.4

GPT05874

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our

Data Book “Package Information”.

SMD = Surface Mounted Device

Dimensions in mm

Semiconductor Group 16 1998-02-01