Page 1
Uni- and Bipolar Hall IC Switches for
Magnetic Field Applications
Features
• Temperature compensated magnetic performance
• Digital output signal
• For unipolar and alternating magnetic fields
• Large temperature range
• Protection against reversed polarity
• Output protection against electrical disturbances
Type Ordering Code Package
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L;
P-SSO-3-2
TLE 4945-2L
Bipolar IC
TLE 4905 L Q67006-A9120 P-SSO-3-2
TLE 4935 L Q67006-A9112 P-SSO-3-2
TLE 4935-2 L Q67006-A9143 P-SSO-3-2
TLE 4945 L Q67006-A9163 P-SSO-3-2
TLE 4945-2L on request P-SSO-3-2
TLE 4905/35/35-2/45 L (Unipolar/Bipolar Magnetic Field Switches) have been designed
specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.
Semiconductor Group 1 1997-09-01
Page 2
Pin Configuration
(view on branded side of component)
±0.15
1.35
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Center of
sensitive area
2.08
±0.15
231
Figure 1
Pin Definitions and Functions
Pin No. Symbol Function
1
V
S
Supply voltage
2 GND Ground
3
Q
Output
V
GND
S
Q
AEP01364
Semiconductor Group 2 1997-09-01
Page 3
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated. The output is protected against electrical
disturbances.
Threshold
Generator
V
S
Figure 2
Block Diagram
1
Hall-
Generator
V
S
V
Ref
Amplifier
2
GND
Schmitt-
Trigger
Output
Stage
3
AEB01243
Q
Semiconductor Group 3 1997-09-01
Page 4
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Functional Description Unipolar Type TLE 4905 (figure 3 and 4)
When a positive magnetic field is applied in the indicated direction (figure 3) and the
B
turn-on magnetic induction
(Operate Point). When the current is reduced, the output of the IC turns off (Release
Point; figure 4).
Ι
is exceeded, the output of the Hall-effect IC will conduct
OP
+
Branded Side
S
V
N
Q
Figure 3
Sensor/Magnetic-Field Configuration
B
B
OP
B
0
V
Q
V
RP
QH
+
-
V
S
Induction
t
Output Voltage
AES01231
V
QL
t
AED01420
Figure 4
Switching Characteristics Unipolar Type
Semiconductor Group 4 1997-09-01
Page 5
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Functional Description Bipolar Type TLE 4935/35-2/45 (figure 5 and 6)
When a positive magnetic field is applied in the indicated direction (figure 5) and the
B
turn-on magnetic induction
(Operate Point). When a reverse magnetic field is generated, the output of the IC turns
off (Release Point; figure 6).
Ι
is exceeded, the output of the Hall-effect IC will conduct
OP
+
Branded Side
S
V
N
Q
Figure 5
Sensor/Magnetic-Field Configuration
B
B
OP
0
V
Q
V
+
B
RP
QH
-
V
S
t
AES01231
Induction
Output Voltage
V
QL
t
AED01421
Figure 6
Switching Characteristics Bipolar Type
Semiconductor Group 5 1997-09-01
Page 6
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Absolute Maximum Ratings
T
= – 40 to 150 ˚C
j
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage
Supply voltage
Output voltage
Output current
Output reverse current –
Junction temperature
Junction temperature
Junction temperature
Storage temperature
Thermal resistance
V
V
V
I
T
T
T
T
R
S
S
Q
Q
j
j
j
stg
th JA
I
Q
– 40 32 V –
–40Vt < 400 ms; ν = 0.1
–32V–
– 100 mA –
– 100 mA –
– 40 150 ˚C –
– 170 ˚C 1000 h
– 210 ˚C 40 h
– 50 150 ˚C –
– 190 K/W –
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage
Junction temperature
Junction temperature
V
T
T
S
j
j
3.8 24 V –
– 40 150 ˚C –
– 40 170 ˚C thresholds may
exceed the limits
Note: In the operating range the functions given in the circuit description are fulfilled.
Semiconductor Group 6 1997-09-01
Page 7
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
AC/DC Characteristics
3.8 V ≤
Parameter Symbol Limit Values Unit Test Condition Test
V
≤ 24 V; – 40 ˚C ≤ Tj≤ 150 ˚C
S
min. typ. max.
Circuit
Supply current
Output saturation
I
SHigh
I
SLow
V
QSat
–
–
3
4
7
8
mAmAB < B
B > B
RP
OP
– 0.25 0.5 V IQ = 40 mA 1
1
1
voltage
Output leakage
I
QL
––10µAV
= 24 V 1
Q
current
Rise/fall time
t
/ t
r
f
––1µsR
= 1.2 kΩ
L
C
≤ 33 pF
L
1
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at
T
= 25°C and
j
the given supply voltage.
Semiconductor Group 7 1997-09-01
Page 8
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Magnetic Characteristics
3.8 V ≤ VS≤ 24 V
Parameter Symbol Limit Values Unit
Junction Temperature T
Turn-ON
induction
B
OP
Turn-OFF
induction
B
RP
Hysteresis
)
(B
OP-BRP
∆B
HY
Junction Temperature T
Turn-ON
induction
B
OP
Turn-OFF
induction
B
RP
Hysteresis
)
(B
OP-BRP
∆B
HY
TLE 4905
unipolar
TLE 4935
bipolar
latch
TLE 4935-2
bipolar
latch
TLE 4945
bipolar
latch
TLE 4945-2
bipolar
latch
min. max. min. max. min. max. min. max. min. max.
= – 40 ˚C
j
7.5
5.5
2
7
5
2
19
17
6.5
= 25 ˚C
j
18
16
6
10
– 20
20
10
–18
20
20
– 10
40
18
–10
36
15
– 27
30
14
– 26
28
27
– 15
54
26
– 14
52
– 6
– 10
2
– 6
– 10
2
10
6
10
10
6
10
– 3
– 6
1
– 3
– 6
1
6
3
5
6
3
5
mT
mT
mT
mT
mT
mT
Junction Temperature T
= 85 ˚C
j
Turn-ON
induction
B
OP
6.5
17.5
9
18
13
26
– 6
10
– 3
6
mT
Turn-OFF
induction
B
RP
4.5
15
– 18
– 9
– 26
– 13
– 10
6
– 6
3
mT
Hysteresis
(B
OP-BRP
∆B
HY
2
5.5
18
36
26
52
2
10
1
5
mT
)
Semiconductor Group 8 1997-09-01
Page 9
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Magnetic Characteristics (cont’d)
3.8 V ≤ VS≤ 24 V
Parameter Symbol Limit Values Unit
TLE 4905
unipolar
TLE 4935
bipolar
latch
TLE 4935-2
bipolar
latch
TLE 4945
bipolar
latch
TLE 4945-2
bipolar
latch
min. max. min. max. min. max. min. max. min. max.
Junction Temperature Tj = 150 ˚C
Turn-ON
induction
B
OP
6
17
7
18
12
25
– 6
10
– 3
6
mT
Turn-OFF
induction
B
RP
4
14
– 18
– 7
– 25
– 12
– 10
6
– 6
3
mT
Hysteresis
(B
OP-BRP
∆B
HY
2
5
14
36
24
50
2
10
1
5
mT
)
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at
T
= 25°C and
j
the given supply voltage.
Semiconductor Group 9 1997-09-01
Page 10
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Ι
S
V
S
+
4.7 nF
1
V
S
-
R
L
C
L
2
GND
3
Q
Ι
Q
4905/35/35-2/45-2
TLE
AES01244
Unipolar Type TLE 4905 Bipolar Type TLE 4935
V
Q
V
QH
V
QL
B
0
B
B
OPRP
V
QH
V
QL
B
B
V
Q
RP OP
0
B
HYHY
B
B
AED01422
V
Q
V
QH
V
0.9
QH
V
0.1
QH
t
t
r f
t
AED01246
Figure 7
Test Circuit 1
Semiconductor Group 10 1997-09-01
Page 11
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Mainframe
V
S
Signal
Figure 8
Application Circuit
Line
1.2 k
Ω
4.7 nF
4.7 nF
1
2
3
Sensor
V
S
GND
TLE
4905/35/35-2/45-2
Q
AES01247
Semiconductor Group 11 1997-09-01
Page 12
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Quiescent Current versus
Supply Voltage
8
Ι
S
mA
6
4
2
0
0
5
=
V
High
Q
=
-40 ˚C
T
j
=
150 ˚C
T
j
10 15 25
AED01248
V
V
S
Quiescent Current versus
Junction Temperature
8
Ι
S
mA
V
= High
6
4
2
0
-50 0 50 100 200
Q
= 24 V
V
S
V
= 3.8 V
S
AED01249
C
T
Quiescent Current Difference
versus Temperature
AED01459
150
∆Ι
S
mA
0.75
0.25
1.0
0.5
0
-40
= 40 mA
Q
Ι
Ι
=-
S∆SLowΙSHigh
Ι
0 50 100 200
T
˚C
Saturation Voltage versus
Output Current
= -40 ˚C
T
j
AED01461
mA
Ι
Q
1.2
V
Q
V
_
_
<
1.0
3.8 V
<
24 V
V
S
0.8
0.6
= 150 ˚C
T
j
0.4
0.2
0
0
j
20 40 60 100
Semiconductor Group 12 1997-09-01
Page 13
TLE 4905 L; TLE 4935 L;
j
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
TLE 4905 Operate-and Release-Point
versus Junction Temperature
25
<
mT
B
3.8 V
20
15
10
5
0
-40
0 50 100 200
AED01424
_
_
<
24 V
V
S
B
OPmax
B
RPmax
B
OPtyp
B
RPtyp
B
OPmin
B
RPmin
˚C
T
j
TLE 4905 Hysteresis versus Junction
Temperature
V
S
AED01426
_
<
24 V
B
B
B
˚C
HYmax
HYtyp
HYmin
T
8
B
3.8 V
_
<
mT
6
4
2
0
-40
0 50 100 200
TLE 4935 Operate-and Release-Point
versus Junction Temperature
V
S
AED01423
_
<
24 V
B
B
B
B
B
B
˚C
OPmax
OPtyp
OPmin
RPmax
RPtyp
RPmin
T
j
30
B
mT
3.8 V
_
<
20
10
0
-10
-20
-40
0 50 100 200
TLE 4935-2 Operate-and Release-Point
versus Junction Temperature
30
3.8 V
_
<
mT
B
20
10
0
-10
-20
-30
-40 ˚C0 50 100 200
V
_
<
S
AED01640
24 V
B
OPmax
B
OPtyp
B
OPmin
B
RPmax
B
RPtyp
B
RPmin
T
j
Semiconductor Group 13 1997-09-01
Page 14
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
TLE 4945 Operate-and Release-Point
versus Junction Temperature
V
<
S
AED01425
_
24 V
B
B
B
B
B
B
T
OPmax
RPmax
OPtyp
RPtyp
OPmin
RPmin
j
30
_
<
mT
3.8 V
B
20
10
0
-10
-20
-30
-40 ˚C0 50 100 200
TLE 4945-2 Operate-and Release-Point
versus Junction Temperature
18
<
mT
3.8 V
B
12
6
0
-6
-12
-18
-40 ˚C0 50 100 200
AED02353
_
_
<
24 V
V
S
B
OPmax
B
RPmax
B
OPtyp
B
RPtyp
B
OPmin
B
RPmin
T
j
Semiconductor Group 14 1997-09-01
Page 15
Package Outline
P-SSO-3-2
(Plastic Single Small Outline Package)
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Exterior Packaging
I.e. tubes, trays, boxes are shown in our Data Book “Package Information”. Dimensions in mm
Semiconductor Group 15 1997-09-01
GPO05358
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