Datasheet TLE4260S, TLE4260 Datasheet (Siemens)

5-V Low-Drop Voltage Regulator TLE 4260

Features

• Low-drop voltage

• Very low quiescent current

• Low starting current consumption

• Integrated temperature protection

• Protection against reverse polarity

• Input voltage up to 42 V

• Overvoltage protection up to 65 V (

• Short-circuit proof

• Suited for automotive electronics

• Wide temperature range

• EMC proofed (100 V/m)

≤ 400 ms)

P-TO220-5-1

Type Ordering Code Package

▼ TLE 4260 Q67000-A8187 P-TO220-5-1
▼ TLE 4260 S Q67000-A9044 P-TO220-5-2

▼ Please also refer to the new pin compatible device TLE 4270

P-TO220-5-2

Functional Description

TLE 4260; S is a 5-V low-drop fixed-voltage regulator in a P-TO220-5-H/S package. The
maximum input voltage is 42 V (65 V/

≤ 400 ms). The device can produce an output

current of more than 500 mA. It is shortcircuit-proof and incorporates temperature
protection that disables the circuit at unpermissibly high temperatures.

Due to the wide temperat ure range o f – 40 to 15 0 °C, the TLE 4260; S i s also s uitable
for use in automotive applications.

V

The IC regulates an input voltage

in the range 6 < VI < 35 V to V

I

signal is generated f or an output voltage of

Qnominal

V

<4.75V. The reset delay can be set

Q

= 5.0 V. A reset

externally with a ca pacitor. If the output current is reduc ed below 10 mA, the regulator
switches internally to standby and the reset generator is turned off. The standby current
drops to max. 700 µA.

Semiconductor Group 1 1998-11-01

Pin Configuration

AEP00577

12345

V

QVRES

GND

DRES

V

Ι Q

(top view)

TLE 4260

TLE 4260 TLE 4260 S

Pin Definitions and Functions (TLE 4260 and TLE 4260 S)
Pin No. Symbol Function

1

V

I

Input; block directly to ground at the IC by a 470-nF capacitor

2 QVRES Reset output; open collector output controlled by the reset

delay
3GNDGround
4 DRES Reset delay; wired to ground with a capacitor
5

Semiconductor Group 2 1998-11-01

V

Q

5-V output voltage; block to ground with a 22-µF capacitor

TLE 4260

Circuit Description

The control amplifie r compares a reference voltage, which i s kept highly accurate by
resistance adjustment, to a voltag e t hat is proporti onal to the o utput v oltage and d rives
the base of the series transistor via a buffer. Saturat ion control as a function of the load
current prevents any over-sat uration of the power element. If the output vol tage goes
below 96% of its typical value, an external capacitor is discharged on pin 4 by the reset
generator. If the voltage on the capacitor reaches the lower threshold V
is issued on pin 2 and not cancelled again until the upper threshold V
an output current of less than I

QN Off

= 10 mA the standby changeover turns off the reset
generator. The latter is turne d on again when the output current in creases, the output
voltage drops below 4.2 V or the delay capacitor is discharged by external measures.

The IC also incorporates a number of internal circuits for protection against:

•Overload

• Overvoltage

• Overtemperature

• Reverse polarity

, a reset signal

ST

is exceeded. For

DT

Input

Overvoltage
Monitoring

1

Adjustment

Temperature
Sensor

BANDGAP
Reference

Control
Amplifier

+

-

GND

Buffer

STANDBY
Changeover

3

Saturation
Control and
Protection
Circuit

RESET
Generator

7

4

2

AEB00578

Output

RESET
Delay

RESET

Block Diagram

Semiconductor Group 3 1998-11-01

Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks

min. max.

Input (Pin 1)

TLE 4260

Input voltage

Input current

Reset Output (Pin 2)

Voltage
Current

Ground (Pin 3)

Current

Reset Delay (Pin 4)

Voltage
Current

V
V
I

I

V
I

R

I

GND

V
I

D

I
I

– 42 42 V –
–65Vt ≤ 400 ms
–1.6A–

R

– 0.3 42 V –
– – – internally limited

–0.5 – A –

D

– 0.3 42 V –
– – – internally limited

Output (Pin 5)

Differential voltage
Current

V
I

Q

I

– V

–5.25 V

Q

I

–1.4A–

V–

Temperature

Junction temperature
Storage temperature

Semiconductor Group 4 1998-11-01

T

j

T

stg

–32°C–
– 50 150 °C–

Operating Range
Parameter Symbol Limit Values Unit Remarks

min. max.

Input voltage

V

I

–32V

1)

TLE 4260

Junction temperature T

j

Thermal Resistances

Junction ambient
Junction case

1)

See diagram “Output Curren t vers us In put Voltage”

R
R

thja
thjc

– 40 165 °C–

–65K/W–
– 3 K/W –

Semiconductor Group 5 1998-11-01

TLE 4260

Characteristics

=13.5 V; Tj=25°C; (unless otherwise specified)

V

I

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Normal Operation

Output voltage

Short -circuit current

Current consumption

I

= II– I

q

Q

Current consumption

I

= II– I

q

Q

Current consumption

I

= II– I

q

Q

Drop voltage
Drop voltage
Load regulation
Supply-voltage regulation

V

Q

I

SC

I

q

I

q

I

q

V

DR

V

DR

∆V
∆V

4.75 5.0 5.25 V 25 mA ≤ IQ≤ 500 mA

V

6V ≤

–40°C ≤

≤ 28 V

I

T

j

≤ 125 °C

500 1000 – mA VI =17 V to 28 V;

V

= 0 V

Q

–8.510mA1)6V ≤ VI ≤ 28 V

I

= 150 mA

Q

–5065mA1)6V ≤ VI ≤ 28 V

I

= 500 mA

Q

––80mA

1)

V

≤ 6V

I

I

= 500 mA

Q

–0.350.5VVI = 4.5 V; IQ=0.5A
–0.20.3VVI = 4.5 V; IQ=0.15A

Q
Q

–1535mV25mA≤ IQ≤ 500 mA
–1550mVVI ≤ 6 V to 28 V;

I

= 100 mA

Q

Supply-voltage regulation

Ripple rejection

Temperature drift of
output voltage

1)

∆V

SVR

α

VQ

Q

–525mVVI ≤ 6 V to 16 V;

I

= 100 mA

Q

–54–dBf = 100 Hz;

V

=0.5V

–2×

10

r

–1/°C–

–4

pp

Standby Operation

Quiscent current;

I

= II– I

q

Q

Quiscent current;

I

= II– I

q

Semiconductor Group 6 1998-11-01

Q

I

q

I

q

– 500 700 µA10V ≤ VI ≤ 16 V;

I

=0mA

Q

– 750 850 µA10V ≤ VI ≤ 16 V;

I

=5mA

Q

TLE 4260

Characteristics (cont’d)

= 13.5 V; Tj=25°C; (unless otherwise specified)

V

I

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Standby Off/Normal On

Current consumption

Current consumption

Normal Off/Standby On

Current consumption
Current consumption
Switching threshold
Switching hysteresis ∆

Reset Generator

Switching threshold

Saturation voltage
Reverse current
Charge current

I

qSOFF

I

qNON

I

qNOFF

I

qSON

I

QNOFF

I

Q

V

RT

V

R

I

R

I

D

– 1.0 1.2 mA see test diagram
– 1.7 2.2 mA see test diagram

– 1.55 2.00 mA see test diagram
– 850 1050 µA see test diagram

7.5 10 12.5 mA see test diagram

2.25 3 4 mA see test diagram

94 96 97 % in % of VQ;

I

>500mA;VI=6V

Q

– 0.25 0.40 V IR=3mA;VI=4.5V
––1µA VR=5V

71013µA–
Switching threshold
Delay switching threshold
Delay time
Delay time

V
V
t
t

ST

DT
D
t

0.9 1.1 1.3 V –

2.15 2.50 2.75 V –
–25–msCD= 100 nF
–5–µs CD= 100 nF

General Data

Turn-Off voltage
Turn-Off hysteresis ∆
Leakage current
Reverse output current

1)

See diagram

Semiconductor Group 7 1998-11-01

V

I
I

IOFF

V

QS
QR

I

40 43 45 V IQ<1mA
–3.0–V–
–500–µA VQ= 0V; VI= 45 V
––1.5mAVQ= 5V; VI= open

TLE 4260

Input
6V to 40V

Application Circuit

Ι

1000 Fµ

V

+

V

Ι

R

15

4

470 nF 100 nF

TLE 4260

2

3

ΙQΙSCΙ

Ι

15

//

470 nF

TLE 4260-2

Ι

R

2

QS

1.8 kΩ

22 Fµ

22 Fµ

100 kΩ

Ι

QR

Output

RESET

AES00579

V

Q

43

Ι

V

C

d

C

d

Ι

GND

V

R

100 nF

Dr

SVR

V

+

VV

=

Ι

= 20 log

Q

V

R

V

∆

Q

AES01509

Test Circuit

Semiconductor Group 8 1998-11-01

TLE 4260

Time Responce

Semiconductor Group 9 1998-11-01

TLE 4260

Time Responce in Standby Condition

Semiconductor Group 10 1998-11-01

TLE 4260

Standby/Normal Changeover

2.5

Ι

mA

2.0

Ι

ON

N

Ι

OFF

N

1.5

Ι

1.0

0.5

OFF

S

Ι

ON

S

0

8910

7

∆Ι

Q

Ι

OFF

QN QN

11 12

Ι

ON

13

AED00583

14

mA

Ι

Q

16

Output Voltage versus Temperature

5.20

V

Q

V

5.10

V

=

13.5 V

Ι

5.00

4.90

4.80

4.70

4.60

-40

0 40 80 160

AED00028

120

C

j

Drop Voltage versus Output Current

800

D

mV

Dr

700

600

500

V

= 4.5 V

Ι

T

= 25

j

C

400

300

200

100

0

0 100 200 300 600

400

AED00584

mA

Ι

Q

Current Consumption versus
Output Current

80

mA

70

60

V

= 13.5 V

Ι

50

40

30

20

10

0

0Ι100 200 300 600

400

AED00585

mA

Ι

Q

Semiconductor Group 11 1998-11-01

TLE 4260

Current Consumption versus
Input Voltage

120

Ι

mA

100

R

= 10 Ω

L

80

60

40

20

0

0

10 20 30 50

AED00590

40

V

V

Ι

Output Voltage versus Input Voltage

12

V

Q

V

10

R

= 10 Ω

L

8

6

4

2

0

0

24

610

AED00591

8

V

V

Ι

Output Current versus Input Voltage

1.2

Ι

Q

A

1.0
= 25

T

C

j

0.8

0.6

0.4

0.2

0

0

10 20 30 50

AED00587

40

V

V

Ι

Semiconductor Group 12 1998-11-01

Package Outlines

P-TO220-5-1

(Plastic Transistor Single Outline)

+0.4

10

10.2

3.75

-0.2
+0.1

TLE 4260

1.27

2.8

4.6

+0.1

±0.4

19.5 max

16

-0.2

1x45˚

-0.2

8.8

±0.3

15.4

Weigth approx. 2.1 g

±0.3

2.6

8.6

15

±0.4

0.4

+0.1

1.7

+0.1

1)

0.8

0.6

M

5x

1) 1 at dam bar (max 1.8 from body)

-0.15

1) 1 im Dichtstegbereich (max 1.8 vom Körper)

-0.15

4.5

±0.4

8.4

±0.3

10.2

GPT05107

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our

Data Book “Package Information”.

Dimensions in mm

Semiconductor Group 13 1998-11-01

P-TO220-5-1

(Plastic Transistor Single Outline)

+0.4

10

10.2

-0.2
+0.1

3.75

15

2.8

±0.2

10.9

±0.2

12.9

1.27

+0.1

4.6

-0.2

1x45˚

-0.2

8.8

TLE 4260

±0.3

15.4

Weigth approx. 2.1 g

1.7

0.8

+0.1

1)

M

0.6

0.4

2.6

+0.1

±0.15

5x

1) 1 at dam bar (max 1.8 from body)

-0.15

1) 1 im Dichtstegbereich (max 1.8 vom Körper)

-0.15

GPT05256

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our

Data Book “Package Information”.

Dimensions in mm

Semiconductor Group 14 1998-11-01