Datasheet TLE4211 Datasheet (Siemens)

Intelligent Double Low-Side Switch 2 × 2 A

Features

● Double low-side switch, 2 x 2 A

● Power limitation

● Overtemperature shutdown

● Status monitoring

● Shorted-load protection

● Reverse polarity protection

● Integrated clamp Z-Diodes

● Voltage proof up to 70 V

● Temperature range – 40 to 125 °C

TLE 4211

Bipolar IC

P-TO220-7-1

Type Ordering Code Package

TLE 4211 Q67000-A8118 P-TO220-7-1

Application

Applications in automotive electronics require intelligent power switches activated by
logic signals, which are shorted-load protected and provide error feedback.

The IC contains two of these power switches (low-side switch). In case of inductive loads
the integrated power Z-diodes clamp the discharging voltage.

With TTL signals at the control inputs (active low) both switches can be activated
independently of one another. If one of the inputs is not in use, it must be applied to high
potential.

The status output (open collector) signals the following malfunctions through low
potential:

● Overload,

● Open load,

● Output shorted to ground,

● Overvoltage.

Semiconductor Group 1 10.96

Pin Configuration

(top view)

TLE 4211

Semiconductor Group 2

Pin Definitions and Functions
Pin No. Symbol Function

1 STA Status output (open collector)

for both outputs; indicates overload, open load and shorted load to
ground as well as overvoltage at pin 7. In case of malfunction the
status output is switched to low after a delay time (except
overvoltage).

2 IN1 Control input 1 (TTL-compatible)

activates output transistor 1 in case of low-potential.

3Q1Output 1

Shorted-load protected, open collector output with 36 V clamp
Z-diode to ground.

TLE 4211

4 GND Ground

Wiring must be designed for a max. short-circuit current (2 x 3.5 A).

5Q2Output 2

Shorted-load protected, open collector output with 36 V clamp
Z-diode to ground.

6 IN2 Control input 2 (TTL-compatible)

activates output transistor 2 in case of low-potential.

7

V

S

Supply voltage

In case of overvoltage at this pin large sections of the circuit are
deactivated. The status output indicates the malfunction without
delay time.

Semiconductor Group 3

TLE 4211

Block Diagram

Semiconductor Group 4

TLE 4211

Circuit Description

Input Circuits

The control inputs comprise TTL-compatible Schmitt triggers with hysteresis. Driven by
these stages the inverting buffer amplifiers convert the logic signal for driving the NPN
power transistors.

Switching Stages

The output stages comprise NPN power transistors with open collectors. Since the
protective circuit allocated to each stage limits the power dissipation, the outputs are
shorted-load protected to the supply voltage throughout the entire operating range.
Positive voltage peaks, which occur during the switching of inductive loads, are limited
by the integrated clamp Z-diodes.

Monitoring and Protective Functions
The outputs are monitored for open load, overload, and shorted output to ground (see

table below). In addition, large sections of the circuit are de-activated in case of

V

excessive supply voltages

. Linked via OR gate the information regarding these

S

malfunctions effects the status output (open collector, active low). An internally
determined delay time applied to all malfunctions but overvoltage prevents the output of
messages in case of short-term malfunctions. Furthermore, a temperature protection
circuit prevents thermal overload. An integrated reverse diode protects the supply
voltage

V

against reverse polarities. Similarly the load circuit is protected against

S

reverse polarities within the limits established by the maximum ratings (no shorted load
at the same time!). At supply voltages below the operating range an undervoltage
detector ensures that neither the status nor the outputs are activated.

Status Output (L = Error)

Undervoltage Operating Range Overvoltage

V

= L

I

(active)

V

= H

I

(passive)
Normal function H H H L
Overload H L H L
Open load H L H L
Shorted output to ground H L L L

Semiconductor Group 5

TLE 4211

Circuit Diagram

Semiconductor Group 6

TLE 4211

Absolute Maximum Ratings

T

= − 40 to 150 °C

j

Parameter Symbol Limit Values Unit

min. max.

Voltages

Supply voltage (pin 7)

1)

Supply voltage (pin 7) t ≤ 500 ms
Input voltage (pin 2; pin 6)
Output voltage (pin 1)

Currents

Switching current (pin 3; pin 5)
Current with reverse polarity (pin 3; pin 5)

T

≤ 85 °C

C

Output current (pin 1)
Max. current at inductive load
Junction temperature

Storage temperature

Operating Range

V
V
V
V

I
I

I
I
T

T

S
S
I
O

Q
Q

Q

Q

j
stg

–45
–
–5
– 0.3

limited internally

– 2.2
–

–
–

– 50

45
70
45
45

–
10

see Diagram

150
150

V
V
V
V

A
mA

°C
°C

Supply voltage
Supply voltage slew rate d
Case temperature

V

S

V

/dV – 1 1 V/µs

S

T

C

5.6

– 40 125 °C

Thermal resistance
junction to case
junction to ambient

1)

Refer to monitoring and protective functions

2)

Lower limit = 4.6 V, if previously VS greater than 5.6 V (turn-on hysteresis)

Semiconductor Group 7

R
R

th JC
th JA

–
–

2)

20 V

4
65

K/W
K/W

TLE 4211

Characteristics

V

= 6 to 18 V and Tj = – 40 to 125 °C

S

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

General Characteristics

Quiescent current
Supply voltage

Supply overvoltage
shutdown threshold
Open load error
threshold voltage

Open load error
threshold current

Open load error
threshold current for
both channels active

Logic

Control input
H-input voltage
L-input voltage

I
I

V

V

I

I

V
V

S
S

QU

QU

SO

QU

IH
IL

–
–

34
–

– 50 120 mA VQ = V

3.5
10010180mAmA

36
40

42
–

V
mV

V

= VI > V

I

V

= VI < V

I

I

= 5 mA; VO < 0.4 V

O

I

= 5 mA; VO < 0.4 V

O

IH
IL

QU

– – 250 mA VQ1 = VQ2 = V

–

0.7

1.7

1.1

2.4
–

V
V

–
–

QU

Hysteresis of

∆

V

I

– 0.6 – V –

input voltage
H-input current

L-input current
Status output

I

IH

– I

V

IL

OSat

–

–

–
–

10
10

µA
µA

V

= 5 V

I

V

= 0.5 V

I

– – 0.4 V IO = 5 mA
(open coll.)
L-saturation voltage

Status delay time

1)

Period from the beginning of the disturbance at one channel (exception: overvoltage) until the 50 % value of
the status switching edge is reached.

Semiconductor Group 8

t

dS

12 20 30 µs

1)

TLE 4211

Characteristics (cont’d)

V

= 6 to 18 V and Tj = – 40 to 125 °C

S

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Power Output

Saturation voltage

Leakage current
Switch-ON time

Switch-OFF time
Output voltage

Negative clamp

Power Clamp Diode (

Output voltage
positive clamp

Serial resistance

V

QSat

I

Q

t

D ON

t

D OFF

–

V

QF

V

= 42 V; S1 open)

S

V

QZ

r

z

– 0.6 0.8 V IQ = 1.6 A; VI < VIL;

– – 300 µA VQ= 6 V; VI > V

–

–

– 1.4 1.8 V IQ= – 2.0 A

34 36 40 V IQ = 0.1 A

–2–Ω0 A < IQ < 2 A

0.5

2.5

5
10

µs
µs

T

= 25 °C

j

IH

see Timing Diagram;

I

= 1 A

Q

Semiconductor Group 9

TLE 4211

Test Circuit

Timing Diagram

Semiconductor Group 10

TLE 4211

Application Circuit

C* is to be dimensioned such that e.g. in case of a battery voltage failure the maximum

ratings of the IC are not exceeded by the recirculation energy

L

, L2.

1

Semiconductor Group 11

TLE 4211

Output Voltage V

Q

versus Output Current I

Shorted Load Current I

Q

versus Output Voltage V

Q0

Q

Status Signal Threshold
versus Chip Temperature

T

Maximum Load Current I

j

versus Load Inductance L

L

Semiconductor Group 12

Package Outlines

P-TO220-7-1

(Plastic Transistor Single Outline)

TLE 4211

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.

SMD = Surface Mounted Device

GPT05108

Dimensions in mm

Semiconductor Group 13