Datasheet TISP7082F3SL, TISP7082F3P, TISP7082F3DR, TISP7082F3D, TISP7072F3SL Datasheet (Power Innovations)

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000Copyright © 2000, Power Innovations Limited, UK

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Patented Ion-Implanted Breakdown Region

– Precise DC and Dynamic Voltages

V

DEVICE

‘7072F3 58 72
‘7082F3 66 82

DRM

V

● Planar Passivated Junctions

V

(BO)

V

– Low Off-State Current....................< 10 µA

● Rated for International Surge Wave Shapes

– Single and Simultaneous Impulses

I

WAVE SHAPE STANDARD

2/10 GR-1089-CORE 85
8/20 IEC 61000-4-5 80

10/160 FCC Part 68 65

10/700

10/560 FCC Part 68 45

10/1000 GR-1089-CORE 40

FCC Part 68

ITU-T K.20/21

TSP

A

50

● ..................UL Recognized Component

description

The TISP7xxxF3 series are 3-point overvoltage
protectors designed for protecting against
metallic (differential mode) and simultaneous
longitudinal (common mode) surges. Each
terminal pair has the same voltage limiting
values and surge current capability. This terminal
pair surge capability ensures that the protector
can meet the simultaneous longitudinal surge
requirement which is typically twice the metallic
surge requirement.

NC - No internal connection
NU - Nonusable; no external electrical connection

should be made to these pins.

Specified ratings require connection of pin 5 and

pin 8.

T

G

R

device symbol

T
NC
NC

R

T

NC

NC

R

T

D PACKAGE

(TOP VIEW)

1

2

3
45

P PACKAGE

(TOP VIEW)

1

2

3

4

SL PACKAGE

(TOP VIEW)

1

2

3

8
7

6

8

7

6

5

G
NU
NU
G

G

NU

NU
G

R

MDXXAL

MDXXAJ A

MDXXAGA

MD7XAACA

Each terminal pair has a symmetrical voltage­triggered thyristor characteristic. Overvoltages
are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which
causesthedevicetocrowbarintoalow-voltage
on state. This low-voltage on state causes the
current resulting from the overvoltage to be .

AVAILABLE OPTIONS

DEVICE PACKAGE CARRIER ORDER #

TISP7xxxF3 D, Small-outline

TISP7xxxF3 P, Plastic DIP TUBE TISP7xxxF3P
TISP7xxxF3 SL, Single-in-line TUBE TISP7xxxF3SL

TAPE AND REEL TISP7xxxF3DR

TUBE TISP7xxxF3D

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

SD7XAB

G

TerminalsT,RandGcorrespondtothe
alternative line designators of A, B and C

1

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

description (continued)

safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted
current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in
both polarities.

These low voltage devices are guaranteed to suppress and withstand the listed international lightning surges
on any terminal pair. Nine similar devices with working voltages from 100 V to 275 V are detailed in the
TISP7125F3 thru TISP7380F3 data sheet.

absolute maximum ratings, TA= 25 °C (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage, 0 °C < T

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

1/2 (Gas tube differential transient, 1/2 voltage wave shape) 240
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 85
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 45
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 80
10/160 (FCC Part 68, 10/160 voltage wave shape) 65
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 60

0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 50
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50
5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50
10/560 (FCC Part 68, 10/560 voltage wave shape) 45

10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 40
Non-repetitive peak on-state current, 0 °C < T
50 Hz, 1 s D Package

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Storage temperature range T

<70°C

A

<70°C (seeNotes1and3)

A

‘7072F3
‘7082F3

PPackage

SL Package

V

DRM

I

PPSM

I

TSM

/dt 250 A/µs

T

J

stg

58
66

4.3

5.7

7.1

-65to+150 °C

-65to+150 °C

V

A

A

NOTES: 1. Initially the TISP

initial conditions. The rated current values may be applied singly either to the R to G or to the T to G or to the T to R terminals.
Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total G terminal
current will be twice the above rated current values).

2. See Thermal Information for derated I

3. Above 70 °C, derate I

®

must be in thermal equilibrium at the specified TA. The surge may be repeated after the TISP®returns to its

values 0 °C < TA< 70 °C and Applications Information for details on wave shapes.

linearly to zero at 150 °C lead temperature.

TSM

PPSM

PRODUCT INFORMATION

2

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

electrical characteristics for all terminal pairs, TA= 25 °C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

DRM

V

(BO)

V

(BO)

I

(BO)

V

T

I

H

dv/dt

I

D

C

off

Repetitive peak off­state current

Breakover voltage dv/dt = ±250 V/ms, R

Impulse breakover
voltage

Breakover current dv/dt = ±250 V/ms, R
On-state voltage IT=±5A,tW=100µs ±5 V
Holding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 A
Critical rate of rise of
off-state voltage
Off-state current VD=±50V ±10 µA

Off-state capacitance

V

D=VDRM

,0°C<TA< 70 °C ±10 µA

=300Ω

SOURCE

dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A

=300Ω ±0.1 ±0.8 A

SOURCE

Linear voltage ramp, Maximum ramp value < 0.85V

f=1MHz, V
f=1MHz, V
f=1MHz, V
f=1MHz, V
f=1MHz, V

=1Vrms,VD=0

d

=1Vrms,VD=-1V

d

=1Vrms,VD=-2V

d

=1Vrms,VD=-5V

d

=1Vrms,VD=-50V

d

DRM

‘7072F3
‘7082F3

‘7072F3
‘7082F3

±5 kV/µs

53
56
51
43
25

±72
±82

±90

±100

69
73
66
56
33

V

V

pF

37

f=1MHz, V

=1Vrms,V

d

DTR

=0

29

(see Note 4)

NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First five capacitance values, with bias V

for the R-G and T-G terminals only. The last capacitance value, with bias V

, is for the T-R terminals.

DTR

,are

D

PRODUCT INFORMATION

3

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

thermal characteristics

PARAMETER

P

R

Junction to free air thermal resistance

θJA

tot

5cm

TEST CONDITIONS

=0.8W, TA=25°C

2

,FR4PCB

D Package 160

SL Package 135

MIN TYP MAX UNIT

°C/WP Package 100

PARAMETER MEASUREMENT INFORMATION

+i

I

TSP

Characteristic

Quadrant I

Switching

-v

I

(BO)

V

Quadrant III

Switching

Characteristic

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

(BO)

I

TSM

I

H

I

V

DRM

I

DRM

V

D

I

D

I

D

I

H

I

TSM

I

TSP

V

D

DRM

V

DRM

-i

T and G and R and G measurements are referenced to the G terminal

T and R measurements are referenced to the R terminal

V

(BO)

PMXXAAA

I

(BO)

+v

PRODUCT INFORMATION

4

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

TYPICAL CHARACTERISTICS

R and G, or T and G terminals

- Off-State Current - µA

D

I

100

10

0·1

0·01

0·001

OFF-STATE CURRENT

vs

JUNCTION TEMPERATURE

1

VD=-50V

VD=50V

-25 0 25 50 75 100 125 150
TJ- Junction Temperature - °C

Figure 2. Figure 3.

TC7LAC

NORMALISED BREAKDOWN VOLTAGES

vs

JUNCTION TEMPERATURE

1.2

1.1

V

(BO)

V

(BR)M

1.0

Normalised Breakdown Voltages

0.9

-25 0 25 50 75 100 125 150

V

(BR)

TJ- Junction Temperature - °C

Normalised to V

I

=1mAand25°C

(BR)

Positive Polarity

TC7LAE

(BR)

NORMALISED BREAKDOWN VOLTAGES

vs

JUNCTION TEMPERATURE

1.2

1.1

V

(BO)

1.0

Normalised Breakdown Voltages

V

(BR)M

0.9

-25 0 25 50 75 100 125 150

V

(BR)

TJ- Junction Temperature - °C

Normalised to V

I

=1mAand25°C

(BR)

Negative Polarity

Figure 4. Figure 5.

TC7LAF

(BR)

ON-STATE CURRENT

vs

ON-STATE VOLTAGE

100

Positive Polarity

10

- On-State Current - A

T

I

150°C

1

23456789110

VT- On-State Voltage - V

25°C

-40°C

TC7LAL

PRODUCT INFORMATION

5

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

TYPICAL CHARACTERISTICS
R and G, or T and G terminals

ON-STATE CURRENT

vs

ON-STATE VOLTAGE

100

Negative Polarity

10

- On-State Current - A

T

I

150°C

1

23456789110

VT- On-State Voltage - V

25°C

-40°C

TC7LAM

HOLDING CURRENT & BREAKOVER CURRENT

vs

- Holding Current, Breakover Current - A

,I
I

JUNCTION TEMPERATURE

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

(BO)

H

0.1

-25 0 25 50 75 100 125 150
TJ- Junction Temperature - °C

+I

(BO)

-I

(BO)

I

H

TC7LAH

Figure 6. Figure 7.

NORMALISED BREAKOVER VOLTAGE

vs

RATE OF RISE OF PRINCIPLE CURRENT

1.5

1.4

1.3

1.2

Normalised Breakover Voltage

1.1

1.0
0·001 0·01 0·1 1 10 100

di/dt - Rate of Rise of Principle Current - A/µs

TC7LAU

Negative

Positive

Figure 8. Figure 9.

1000

Maximum Surge Current - A

100

10

SURGE CURRENT

vs

DECAY TIME

2

10 100 1000

Decay Time - µs

TC7LAA

PRODUCT INFORMATION

6

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

TYPICAL CHARACTERISTICS

RandTterminals

- Off-State Current - µA

D

I

100

10

0·1

0·01

0·001

OFF-STATE CURRENT

vs

JUNCTION TEMPERATURE

1

-25 0 25 50 75 100 125 150
TJ- Junction Temperature - °C

Figure 10. Figure 11.

TC7LAD

NORMALISED BREAKDOWN VOLTAGES

vs

JUNCTION TEMPERATURE

1.2

1.1

V

(BO)

1.0

Normalised Breakdown Voltages

0.9

-25 0 25 50 75 100 125 150

V

(BR)

TJ- Junction Temperature - °C

TC7LAG

V

(BR)M

ON-STATE CURRENT

vs

ON-STATE VOLTAGE

100

10

- On-State Current - A

T

I

150°C

1

23456789110

VT- On-State Voltage - V

25°C

-40°C

TC7LAK

HOLDING CURRENT & BREAKOVER CURRENT

vs

- Holding Current, Breakover Current - A

,I
I

JUNCTION TEMPERATURE

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

(BO)

H

0.1

-25 0 25 50 75 100 125 150
TJ- Junction Temperature - °C

I

(BO)

I

H

TC7LAJ

Figure 12. Figure 13.

PRODUCT INFORMATION

7

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

TYPICAL CHARACTERISTICS

RandTterminals

NORMALISED BREAKOVER VOLTAGE

vs

RATE OF RISE OF PRINCIPLE CURRENT

1.5

1.4

1.3

1.2

Normalised Breakover Voltage

1.1

TC7LAV

1.0
0·001 0·01 0·1 1 10 100

di/dt - Rate of Rise of Principle Current - A/µs

Figure 14.

PRODUCT INFORMATION

8

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

THERMAL INFORMATION

MAXIMUM NON-RECURRING 50 Hz CURRENT

vs

CURRENT DURATION

V

= 250 Vrms

GEN

=10to150Ω

R

GEN

10

SL Package

P Package

- Maximum Non-Recurrent 50 Hz Current - A

TRMS

I

1

D Package

0·1 1 10 100 1000

t-CurrentDuration-s

Figure 15. Figure 16.

TI7LAA

ΩΩΩ

TISP7072F3, TISP7082F3

MARCH 1994 - REVISED MARCH 2000

THERMAL RESPONSE

100

D Package

10

- Transient Thermal Impedance - °C/W

Z

Α

Α

Α

Α

θ

θJ

θ

θ

SL Package

1

0·0001 0·001 0·01 0·1 1 10 100 1000

t-PowerPulseDuration-s

P Package

TI7MAB

PRODUCT INFORMATION

9

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

THERMAL INFORMATION

Non-repetitive peak on-state pulse derated values for 0 °C ≤ T

RATING SYMBOL VALUE UNIT

Non-repetitive peak on-state pulse current, 0 °C < T

1/2 (Gas tube differential transient, 1/2 voltage wave shape) 130
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 45
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 75
10/160 (FCC Part 68, 10/160 voltage wave shape) 55
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual) 50

0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 50
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50
5/320 (FCC Part 68, 9/720 voltage wave shape) 50
10/560 (FCC Part 68, 10/560 voltage wave shape) 40
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 40

®

NOTES: 5. Initially the TISP

initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R terminals.
Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total G terminal
current will be twice the above rated current values).

6. See Applications Information for details on wave shapes.

7. Above 70 °C, derate I

must be in thermal equilibrium at the specified TA. The impulse may be repeated after the TISP®returns to its

linearly to zero at 150 °C lead temperature.

PPSM

<70°C (seeNotes5,6and7)

A

≤ 70 °C

A

I

PPSM

A

PRODUCT INFORMATION

10

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

APPLICATIONS INFORMATION

deployment

These devices are three terminal overvoltage protectors. They limit the voltage between three points in the
circuit. Typically, this would be the two line conductors and protective ground (Figure 17).

Th3

Th1

Th2

Figure 17. MULTI-POINT PROTECTION

In Figure 17, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the
±V
±V

of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its

(BO)

value.

(BO)

lightning surge

wave shape notation

Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an
exponential rise and an exponential decay. Wave shapes are classified in terms of rise time in microseconds
and a decay time in microseconds to 50% of the maximum amplitude. The notation used for the wave shape
is rise time/decay time, without the microseconds quantity and the “/” between the two values has no
mathematical significance. A 50A, 5/310 waveform would have a peak current value of 50 A, a rise time of
5 µs and a decay time of 310 µs. The TISP

®

surge current graph comprehends the wave shapes of commonly

used surges.

generators

There are three categories of surge generator type: single wave shape, combination wave shape and circuit
defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage and
short circuit current (e.g. 10/1000 open circuit voltage and short circuit current). Combination generators have
two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 open
circuit voltage and 8/20 short circuit current) Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage wave shape is referenced (e.g. a 10/700 open
circuit voltage generator typically produces a 5/310 short circuit current). If the combination or circuit defined
generators operate into a finite resistance the wave shape produced is intermediate between the open circuit
and short circuit values.

ITU-T 10/700 generator

This circuit defined generator is specified in many standards. The descriptions and values are not consistent
between standards and it is important to realise that it is always the same generator being used.

Figure 18 shows the 10/700 generator circuit defined in ITU-T recommendation K.20 (10/96) “Resistibility of
telecommunication switching equipment to overvoltages and overcurrents”. The basic generator comprises
of:

capacitor C

, charged to voltage VC, which is the energy storage element.

1

switch SW to discharge the capacitor into the output shaping network

PRODUCT INFORMATION

11

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

shunt resistor R1, series resistor R2and shunt capacitor C2form the output shaping network.
series feed resistor R
series feed resistor R

to connect to one line conductor for single surge

3

to connect to the other line conductor for dual surging

4

C

20 µF

V

C

2.0 kV

1

SW

R

50 ΩΩΩΩ

10/700 GENERATOR - SINGLE TERMINAL PAIR TEST

R

2

15 ΩΩΩΩ

C

1

C

20 µF

V

3.3 kV

1

2

200 nF

C

SW

R

1

50 ΩΩΩΩ

10/700 GENERATOR - DUAL TERMINAL PAIR TEST

R

15 ΩΩΩΩ

2

200 nF

R

25 ΩΩΩΩ

C

2

50 A

3

5/310

R

TR

G

T

R AND T

TEST

RT

50 A

5/310

T AND G

TEST

25 ΩΩΩΩ

R

25 ΩΩΩΩ

RT

G

R

4

60 A

3

4/250

120 A
4/250

RANDG

TEST

60 A

4/250

G

DUAL

TANDG,

RANDG

TEST

G

Figure 18.

In the normal single surge equipment test configuration, the unsurged line is grounded. This is shown by the
dotted lines in the top drawing of Figure 18. However, doing this at device test places one terminal pair in
parallel with another terminal pair. To check the individual terminal pairs of the TISP7xxxF3, without any
paralleled operation, the unsurged terminal is left unconnected.

With the generator output open circuit, when SW closes, C1 discharges through R
will be C

, or 20 x 50 = 1000 µs. For the 50% voltage decay time the time constant needs to be multiplied

1R1

. The decay time constant

1

by 0.697, giving 0.697 x 1000 = 697 µs which is rounded to 700 µs.

The output rise time is controlled by the time constant of R

and C2. which is 15 x 200 = 3000 ns or 3 µs.

2

Virtual voltage rise times are given by straight line extrapolation through the 30% and 90% points of the
voltage waveform to zero and 100%. Mathematically this is equivalent to 3.24 times the time constant, which
gives 3.24 x 3 = 9.73 which is rounded to 10 µs. Thus the open circuit voltage rises in 10 µs and decays in
700 µs, giving the 10/700 generator its name.

When the overvoltage protector switches it effectively shorts the generator output via the series 25 Ω resistor.
Two short circuit conditions need to be considered: single output using R
dual output using R

For the single test, the series combination of R

and R4(bottom circuit of Figure 18).

3

and R3(15 + 25 = 40 Ω)isinshuntwithR1. This lowers the

2

only (top circuit of Figure 18) and

3

discharge resistance from 50 Ω to 22.2 Ω, giving a discharge time constant of 444 µs and a 50% current
decay time of 309.7 µs, which is rounded to 310 µs.

For the rise time, R

and R3are in parallel, reducing the effective source resistance from 15 Ω to 9.38 Ω,

2

giving a time constant of 1.88 µs. Virtual current rise times are given by straight line extrapolation through the
10% and 90% points of the current waveform to zero and 100%. Mathematically this is equivalent to 2.75

PRODUCT INFORMATION

12

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

times the time constant, which gives 2.75 x 1.88 = 5.15, which is rounded to 5 µs. Thus the short circuit
current rises in 5 µs and decays in 310 µs, giving the 5/310 wave shape.

The series resistance from C

to the output is 40 Ω giving an output conductance of 25 A/kV. For each 1 kV of

1

capacitor charge voltage, 25 A of output current will result.

For the dual test, the series combination of R
R

. This lowers the discharge resistance from 50 Ω to 17.7 Ω, giving a discharge time constant of 355 µs and

1

plus R3and R4in parallel (15 + 12.5 = 27.5 Ω) is in shunt with

2

a 50% current decay time of 247 µs, which is rounded to 250 µs.

For the rise time, R

and R4are in parallel, reducing the effective source resistance from 15 Ω to 6.82 Ω,

2,R3

giving a time constant of 1.36 µs, which gives a current rise time of 2.75 x 1.36 = 3.75, which is rounded to
4 µs. Thus the short circuit current rises in 4 µs and decays in 250 µs, giving the 4/250 wave shape.

The series resistance from C

to an individual output is 2 x 27.5 = 55 Ω giving an output conductance of

1

18 A/kV. For each 1 kV of capacitor charge voltage, 18 A of output current will result.

At 25 °C these protectors are rated at 50 A for the single terminal pair condition and 60 A for the dual
condition (R and G terminals and T and G terminals). In terms of generator voltage, this gives a maximum
generator setting of 50 x 40 = 2.0 kV for the single condition and 2 x 60 x 27.5 = 3.3 kV for the dual condition.
The higher generator voltage setting for the dual condition is due to the current waveform decay being shorter
at 250 µs compared to the 310 µs value of the single condition.

Other ITU-T recommendations use the 10/700 generator: K.17 (11/88) “Tests on power-fed repeaters using
solid-state devices in order to check the arrangements for protection from external interference” and K.21(10/

96) “Resistibility of subscriber's terminal to overvoltages and overcurrents“, K.30 (03/93) “Positive
temperature coefficient (PTC) thermistors”.

Several IEC publications use the 10/700 generator, common ones are IEC 6100-4-5 (03/95) “Electromagnetic
compatibility (EMC) - Part 4: Testing and measurement techniques - Section 5: Surge immunity test” and IEC
60950 (04/99) “Safety of information technology equipment”.

The IEC 60950 10/700 generator is carried through into other “950” derivatives. Europe is harmonised by
CENELEC (Comité Européen de Normalization Electro-technique) under EN 60950 (included in the Low
Voltage Directive, CE mark). US has UL (Underwriters Laboratories) 1950 and Canada CSA (Canadian
Standards Authority) C22.2 No. 950.

FCC Part 68 “Connection of terminal equipment to the telephone network” (47 CFR 68) uses the 10/700
generator for Type B surge testing. Part 68 defines the open circuit voltage wave shape as 9/720 and the
short circuit current wave shape as 5/320 for a single output. The current wave shape in the dual (longitudinal)
test condition is not defined, but it can be assumed to be 4/250.

Several VDE publications use the 10/700 generator, for example: VDE 0878 Part 200 (12/92)
”Electromagnetic compatibility of information technology equipment and telecommunications equipment;
Immunity of analogue subscriber equipment”.

1.2/50 generators

The 1.2/50 open circuit voltage and 8/20 short circuit current combination generator is defined in IEC 61000­4-5 (03/95) “Electromagnetic compatibility (EMC) - Part 4: Testing and measurement techniques - Section 5:
Surge immunity test”. This generator has a fictive output resistance of 2 Ω, meaning that dividing the open
circuit output voltage by the short circuit output current gives a value of 2 Ω (500 A/kV).

PRODUCT INFORMATION

13

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

The combination generator has three testing configurations; directly applied for testing between equipment
a.c. supply connections, applied via an external 10 Ω resistor for testing between the a.c. supply connections
and ground, and applied via an external 40 Ω resistor for testing all other lines. For unshielded unsymmetrical
data or signalling lines, the combination generator is applied via a 40 Ω resistor either between lines or line to
ground. For unshielded symmetrical telecommunication lines, the combination generator is applied to all lines
viaaresistorofnx40Ω, where n is the number of conductors and the maximum value of external feed
resistance is 250 Ω. Thus for four conductors n = 4 and the series resistance is 4 x 40 = 160 Ω.Forten
conductors the resistance cannot be 10 x 40 = 400 Ω and must be 250 Ω. The combination generator is used
for short distance lines, long distance lines are tested with the 10/700 generator.

When the combination generator is used with a 40 Ω, or more, external resistor, the current wave shape is not
8/20, but becomes closer to the open circuit voltage wave shape of 1.2/50. For example, a commercial
generator when used with 40 Ω produced an 1.4/50 wave shape.

The wave shapes of 1.2/50 and 8/20 occur in other generators as well. British Telecommunication has a
combination generator with 1.2/50 voltage and 8/20 current wave shapes, but it has a fictive resistance of 1 Ω.
ITU-T recommendation K.22 “Overvoltage resistibility of equipment connected to an ISDN T/S BUS” (05/95)
has a 1.2/50 generator option using only resistive and capacitive elements, Figure 19.

C

4

8nF

V

C

1µF

1kV

1

C

SW

R

76 ΩΩΩΩ

R

2

13 ΩΩΩΩ

NOTE: SOME STANDARDS

1

C

30 nF

2

C

3

8nF

REPLACE OUTPUT

CAPACITORS WITH

25 ΩΩΩΩ RESISTORS

K.22 1.2/50 GENERATOR

Figure 19.

The K.22 generator produces a 1.4/53 open circuit voltage wave. Using 25 Ω output resistors, gives a single
short circuit current output wave shape of 0.8/18 with 26 A/kV and a dual of 0.6/13 with 20 A/kV. These
current wave shapes are often rounded to 1/20 and 0.8/14.

There are 8/20 short circuit current defined generators. These are usually very high current, 10 kA or more
and are used for testing a.c. protectors, primary protection modules and some Gas Discharge Tubes.

impulse testing

To verify the withstand capability and safety of the equipment, standards require that the equipment is tested
with various impulse wave forms. The table in this section shows some common test values.

Manufacturers are being increasingly required to design in protection coordination. This means that each
protector is operated at its design level and currents are diverted through the appropriate protector e.g. the
primary level current through the primary protector and lower levels of current may be diverted through the
secondary or inherent equipment protection. Without coordination, primary level currents could pass through
the equipment only designed to pass secondary level currents. To ensure coordination happens with fixed
voltage protectors, some resistance is normally used between the primary and secondary protection (R1a
and R1b Figure 21). The coordination resistance values given in here apply to a 400 V (d.c. sparkover) gas
discharge tube primary protector and the appropriate test voltage when the equipment is tested with a
primary protector.

PRODUCT INFORMATION

14

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

PEAK VOLTAGE

STANDARD

GR-1089-CORE

FCC Part 68
(March 1998)

I 31-24 1500 0.5/700 37.5 0.2/310 50 0 NA

ITU-T K20/K21

† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
NA = Not Applicable, primary protection removed or not specified.

SETTING

V

2500 2/10 2 x 500 2/10 2 x 85
1000 10/1000 2 x 100 10/1000 2 x 40
1500 10/160 200 10/160 65 16

800 10/560 100 10/560 45 10
1000
1500
1500

1000
1500
4000
4000

VOLTAGE

WAVE FO RM

µs

9/720 †

(SINGLE)

(DUAL)

10/700
(SINGLE)
(SINGLE)

(DUAL)

PEAK CURRENT

VALUE

A

25

37.5

2x27

25

37.5
100

2x72

CURRENT

WAVE FORM

µs

5/320 †
5/320 †

4/250

5/310
5/310
5/310
4/250

TISP7xxxF3

25 °C RATING

A

50
50

2x60

50
50
50

2x60

SERIES

RESISTANCE

Ω

25 NA

0

0

0
40
12

COORDINATION

RESISTANCE

Ω (MIN.)

NA

NA
NA

If the impulse generator current exceeds the protectors current rating then a series resistance can be used to
reduce the current to the protectors rated value and so prevent possible failure. The required value of series
resistance for a given waveform is given by the following calculations. First, the minimum total circuit
impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The
impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then
subtracted from the minimum total circuit impedance to give the required value of series resistance. In some
cases the equipment will require verification over a temperature range. By using the derated waveform values
from the thermal information section, the appropriate series resistor value can be calculated for ambient
temperatures in the range of 0 °C to 70 °C.

8
7

protection voltage

The protection voltage, (V
increase is dependent on the rate of current rise, di/dt, when the TISP
breakdown region. The V
V

(250 V/ms) value by the normalised increase at the surge’s di/dt. An estimate of the di/dt can be made

(BO)

), increases under lightning surge conditions due to thyristor regeneration. This

(BO)

value under surge conditions can be estimated by multiplying the 50 Hz rate

(BO)

®

is clamping the voltage in its

from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.

As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/µs, but,
as the rise is exponential, the initial dv/dt is three times higher, being 450 V/µs. The instantaneous generator
output resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω,thetotalseries
resistance becomes 45
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP

Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the

®

breakdown region.

capacitance

off-state capacitance

The off-state capacitance of a TISP®is sensitive to junction temperature, TJ, and the bias voltage,
comprising of the dc voltage, V
measured with an ac voltage of 1 V rms. When V
of V

. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective

d

capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of
10 cm could create a circuit resonance with the device capacitance in the region of 80 MHz.

, and the ac voltage, Vd. All the capacitance values in this data sheet are

D

>> Vdthe capacitance value is independent on the value

D

PRODUCT INFORMATION

15

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

longitudinal balance

Figure 20 shows a three terminal TISP®with its equivalent “delta” capacitance. Each capacitance, CTG,C
and CTR, is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge.
If wire R is biased at a larger potential than wire T then C
capacitance of C
due to (C

TG-CRG

in parallel with the capacitive difference of (CTG-CRG). The line capacitive unbalance is

RG

) and the capacitance shunting the line is CTR+CRG/2 .

TG>CRG

. Capacitance CTGis equivalent to a

RG

Figure 20.

All capacitance measurements in this data sheet are three terminal guarded to allow the designer to
accurately assess capacitive unbalance effects. Simple two terminal capacitance meters (unguarded third
terminal) give false readings as the shunt capacitance via the third terminal is included.

PRODUCT INFORMATION

16

typical circuits

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

TIP

WIRE

RING
WIRE

F1a

F1b

Figure 21. PROTECTION MODULE

R1a

R1a

GDTa
GDTb

R1b

Th1

TISP7xxxF3

Th3

Th3

PROTECTED

EQUIPMENT

Th2

AI7XBP

Th1

Th2

R1b

TISP70xxF3

D.C.

SIGNAL

AI7XBQ

Figure 22. SELV DATA AND BATTERY FEED PROTECTION

R1a

Th3

Th1

Th2

R1b

TISP70xxF3

D.C.

TISP70xxF3

R1a

Th3

Th1

RX SIGNAL

TX SIGNAL

Th2

R1b

Figure 23. SELV DATA AND BATTERY FEED WITH SEPARATE RX AND TX

PRODUCT INFORMATION

AI7XBR

17

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

MECHANICAL DATA

D008
plastic small-outline package

This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

D008

6,20 (0.244)
5,80 (0.228)

INDEX

8

5,00 (0.197)
4,80 (0.189)

765

8-pin Small Outline Microelectronic Standard

Package MS-012, JEDEC Publication 95

1,75 (0.069)
1,35 (0.053)

0,203 (0.008)
0,102 (0.004)

4,00 (0.157)
3,81 (0.150)

0,79 (0.031)
0,28 (0.011)

1

7° NOM
3 Places

2

Pin Spacing

1,27 (0.050)

(see Note A)

6 Places

3

0,50 (0.020)
0,25 (0.010)

4

x45°NOM

0,51 (0.020)
0,36 (0.014)

8 Places

0,229 (0.0090)
0,190 (0.0075)

5,21 (0.205)
4,60 (0.181)

7° NOM
4 Places

1,12 (0.044)
0,51 (0.020)

4° ± 4°

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition.

B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0,15 (0.006).
D. Lead tips to be planar within ±0,051 (0.002).

PRODUCT INFORMATION

18

MDXXAAC

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

D008
tape dimensions

D008 Package (8-pin Small Outline) Single-Sprocket Tape

TISP7072F3, TISP7082F3

MARCH 1994 - REVISED MARCH 2000

MECHANICAL DATA

8,10
7,90

6,50
6,30

Carrier Tape
Embossment

4,10
3,90

2,05
1,95

ø1,5MIN.

ALL LINEAR DIMENSIONS IN MILLIMETERS

1,60
1,50

0,8 MIN.

5,60
5,40

0MIN.

Direction of Feed

0,40

12,30
11,70

Cover
Tape

2,2
2,0

NOTES: A. Taped devices are supplied on a reel of the following dimensions:-

Reel diameter: 330 +0,0/-4,0 mm
Reel hub diameter: 100 ±2,0 mm
Reel axial hole: 13,0 ±0,2 mm

B. 2500 devices are on a reel.

PRODUCT INFORMATION

MDXXATB

19

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

MECHANICAL DATA

P008
plastic dual-in-line package

This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions The package is intended for
insertion in mounting-hole rows on 7,62 (0.300) centres. Once the leads are compressed and inserted,
sufficient tension is provided to secure the package in the board during soldering. Leads require no additional
cleaning or processing when used in soldered assembly.

P008

9,75 (0.384)
9,25 (0.364)

8765

Index
Notch

0,53 (0.021)
0,38 (0.015)

8Places

312 4

1,78 (0.070) MAX

4Places

0,51 (0.020)

6,60 (0.260)
6,10 (0.240)

5,08 (0.200)

MAX

3,17 (0.125)

MIN

MIN

2,54 (0.100) Typical

(see Note A)

6Places

8,23 (0.324)
7,62 (0.300)

Seating

Plane

0,36 (0.014)
0,20 (0.008)

9,40 (0.370)
8,38 (0.330)

ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARANTHETICALLY IN INCHES

NOTES: A. Each pin centreline is located within 0,25 (0.010) of its true longitudinal position.

B. Dimensions fall within JEDEC MS001 - R-PDIP-T, 0.300" Dual-In-Line Plastic Family.
C. Details of the previous dot index P008 package style, drawing reference MDXXABA, are given in the earlier publications.

PRODUCT INFORMATION

20

MDXXCF

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

MECHANICAL DATA

SL003
3-pin plastic single-in-line package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

SL003

Index

Notch

1 3

1,854 (0.073)

MAX

0,711 (0.028)
0,559 (0.022)

3Places

9,75 (0.384)
9,25 (0.364)

2

8,31 (0.327)

MAX

4,267 (0.168)

MIN

2,54 (0.100) Typical

(see Note A)

2Places

3,40 (0.134)
3,20 (0.126)

6,60 (0.260)
6,10 (0.240)

12,9 (0.492)

MAX

0,356 (0.014)
0,203 (0.008)

ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARANTHETICALLY IN INCHES

NOTES: A. Each pin centreline is located within 0,25 (0.010) of its true longitudinal position.

B. Body molding flash of up to 0,15 (0.006) may occur in the package lead plane.
C. Details of the previous dot index SL003 style, drawing reference MDXXAD, are given in the earlier publications.

PRODUCT INFORMATION

MDXXCE

21

TISP7072F3, TISP7082F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.

PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 2000, Power Innovations Limited

PRODUCT INFORMATION

22