Datasheet TEA1103-N2, TEA1103-N1, TEA1103TS-N2, TEA1103T-N2, TEA1103T-N1 Datasheet (Philips)

DATA SH EET

Preliminary specification
Supersedes data of 1997 Oct 09
File under Integrated Circuits, IC03

1999 Jan 27

INTEGRATED CIRCUITS

TEA1103; TEA1103T;
TEA1103TS

Fast charge ICs for NiCd and NiMH
batteries

1999 Jan 27 2

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

FEATURES

• Safe and fast charging of Nickel Cadmium (NiCd) and
Nickel Metal Hydride (NiMH) batteries

• Pin compatible with the TEA1102x, fast charge ICs for
LiIon, SLA, NiCd and NiMH batteries

• Three charge states for NiCd or NiMH; fast, top-off and
trickle or voltage regulation (optional)

• Adjustable fast charge current [0.5CA to 5CA nominal
(CA = Capacity Amperes)]

• DC top-off and pulsating trickle charge current (NiCd
and NiMH)

• Temperature dependent ∆T/∆t battery full detection

• Automatic switch-over to accurate peak voltage

detection (−

1

⁄4%) if no NTC is applied

• Possibility to use both ∆T/∆t and peak voltage detection

as main fast charge termination

• Support of inhibit during all charging states

• Manual refresh with regulated adjustable discharge

current (NiCd and NiMH)

• Voltage regulation in the event of no battery

• Support of battery voltage based charge indication and

buzzer signalling at battery insertion, end of refresh and
at full detection

• Single, dual and separate LED outputs for indication of
charge status state

• Minimum and maximum temperature protection

• Time-out protection

• Short-circuit battery voltage protection

• Can be applied with few low-cost external components.

GENERAL DESCRIPTION

The TEA1103x are fast charge ICs which are able to fast
charge NiCd and NiMH batteries.

The main fast charge termination for NiCd and NiMH
batteries are ∆T/∆t and peak voltage detection, both of
which are well proven techniques. The TEA1103x
automatically switches over from ∆T/∆t to peak voltage
detection if the thermistor fails or is not present. The ∆T/∆t
detection sensitivity is temperature dependent, thus
avoiding false charge termination. Three charge states
can be distinguished; fast, top-off and trickle.

Several LEDs, as well as a buzzer, can be connected to
the TEA1103x for indicating battery insertion, charge
states, battery full condition and protection mode.

The TEA1103x are contained in a 20-pin package and are
manufactured in a BiCMOS process, essentially for
integrating the complex mix of requirements in a single
chip solution. Only a few external low cost components are
required in order to build a state of the art charger.

The TEA1103x are pin compatible with the TEA1102x, fast
charge ICs for LiIon, SLA, NiCd and NiMH batteries.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1103 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1
TEA1103T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
TEA1103TS SSOP20 plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1

1999 Jan 27 3

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage 5.5 − 11.5 V

I

P

supply current outputs off − 4 − mA

∆V

NTC/VNTC

temperature rate dependent
(∆T/∆t) detection level

V

NTC

=2V;

Tj= 0 to 50 °C

−−0.25 − %

∆V

bat/Vbat

voltage peak detection level with
respect to top value

V

bat

=2V;

Tj= 0 to 50 °C

−−0.25 − %

I

Vbat

input current battery monitor V

bat

= 0.3 to 1.9 V − 1 − nA

V

bat(l)

voltage at pin 19 for detecting low
battery voltage

− 0.30 − V

I

IB

battery charge current fast charge 10 − 100 µA

top-off mode − 3 −µA

I

IB(max)

maximum battery charge current voltage regulation full

NiCd and NiMH battery

− 10 −µA

I

IB(Lmax)

maximum load current no battery − 40 −µA

f

osc

oscillator frequency 10 − 200 kHz

V

reg

regulating voltage NiCd and NiMH

(pin V

stb

open-circuit)

− 1.325 or
V

stb

− V

open battery − 1.9 − V

1999 Jan 27 4

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH

batteries

TEA1103; TEA1103T;

TEA1103TS

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BLOCK DIAGRAM

handbook, full pagewidth

PROTECTION

NTC
present

T

cut-off

battery
low

end
refresh

no­battery

T

min

T

max

0.3 V

1 V

1.9 V

3.3 V

2.8 V

1 V

0.75 V

4.25 V

156
kΩ

36
kΩ

12
kΩ

DA/AD

CONVERTER

1.325 V/V

stb

NiCd

NIMH

1.9 V
no­battery

V

bat

V

reg

CHARGE CONTROL

AND

OUTPUT DRIVERS

fast

charge

1.25/R

ref

top
off

3 µA

standby

current

10 µA

load

current

40 µA

4.25 V

RSQ

LS

OSC

PWM

SET

A1

A4

100 mV

refresh

CONTROL LOGIC

SUPPLY

BLOCK

TIMER

AND

CHARGE

STATUS

INDICATION

V

bat

MTV

NTC

9

8

V

bat

V

stbRref

OSC

19 1 20 14

15

17

18

10

2

4

5

6
7

PWM

LS

AO

RFSH

IB

PSD

LED

POD
PTD

12 13 16 113

VPVslVSGND FCT

TEA1103

A2

A3

4×

MBH547

Fig.1 Block diagram.

1999 Jan 27 5

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

PINNING

SYMBOL PIN DESCRIPTION

V

stb

1 standby regulation voltage input

(NiCd and NiMH)
IB 2 charge current setting
GND 3 ground
PSD 4 program pin sample divider
LED 5 LED output
POD 6 program pin oscillator divider
PTD 7 program pin time-out divider
NTC 8 temperature sensing input
MTV 9 maximum temperature voltage
RFSH 10 refresh input/output
FCT 11 fast charge termination and

battery chemistry identification
V

P

12 positive supply voltage

V

sl

13 switched reference voltage output
OSC 14 oscillator input
PWM 15 pulse width modulator output
V

S

16 stabilized reference voltage
LS 17 loop stability pin
AO 18 analog output
V

bat

19 single-cell battery voltage input
R

ref

20 reference resistor pin

Fig.2 Pin configuration.

handbook, halfpage

TEA1103

MBH539

1
2
3
4
5
6
7
8
9

10

20
19
18
17
16
15
14
13
12
11

V

stb

R

ref

V

bat

V

sl

V

P

V

S

AO
LS

PWM
OSC

FCT

IB

GND

PSD
LED

POD

PTD
NTC

MTV

RFSH

1999 Jan 27 6

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

INTRODUCTION

All battery types are initially fast charged with an
adjustable high current. Fast charge termination depends
upon the battery type. With NiCd and NiMH batteries the
main fast charge termination will be the∆T/∆t (temperature
detection) and/or peak voltage detection.

The fast charge period is followed by a top-off period for
NiCd and NiMH batteries. During the top-off period the
NiCd and NiMH batteries are charged to maximum
capacity by reduced adjustable charge current.

The top-off period ends after time-out or one hour
respectively.

After the top-off period, the TEA1103x switches over to the
standby mode. For NiCd and NiMH batteries either the
voltage regulation or trickle charge mode can be selected.
The voltage regulation mode is selected when the battery
includes a fixed load. Trickle charge prevents a discharge
of the battery over a long period of time.

Charging principles

C

HARGING NiCd/NiMH BATTERIES

Fast charging of the battery begins when the power supply
voltage is applied and at battery insertion.

During fast charge of NiCd and NiMH batteries, the battery
temperature and voltage are monitored. Outside the
initialized temperature and voltage window, the system
switches over to the top-off charge current.

The TEA1103x supports detection of fully charged NiCd
and NiMH batteries by either of the following criteria:

•∆T/∆t

• Voltage peak detection.

If the system is programmed with ∆T/∆t and V

peak

or,∆T/∆t

or V

peak

as the main fast charge termination, it
automatically switches to voltage peak detection if the
battery pack is not provided with a temperature sensing
input (NTC). In this way both packages, with and without
temperature sensor, can be used randomly independent of
the applied full detection method. Besides ∆T/∆t and/or
voltage peak detection, fast charging is also protected by
temperature cut-off and time-out.

To avoid false fast charge termination by peak voltage
detection or ∆T/∆t, full detection is disabled during a short
hold-off period at the start of a fast charge session.
After fast charge termination, the battery is extra charged
by a top-off period. During this period of approximately one
hour, the charge current is lowered thus allowing the

battery to be charged to nearly 100% before the system
switches over to standby.

After the battery has been charged to nearly 100% by the
top-off period, discharge of the battery (caused by a load
or by the self-discharge) can be avoided by voltage
regulation or by trickle charge.

If batteries are charged in combination with a load, the
TEA1103x can be programmed to apply voltage regulation
during the standby mode. In this way, discharge of the
battery caused by self-discharge or by an eventual load is
avoided. The regulating voltage is adjustable to the
voltage characteristic of the battery. For battery safety the
charge current is limited and the temperature is monitored
during voltage regulation. If a trickle charge is applied, the
self-discharge of the battery will be compensated by a
pulsating charge current.

To avoid the so called ‘memory effect’ in NiCd batteries, a
refresh can be manually activated. The discharge current
is regulated by the IC in combination with an external
power transistor. After discharging the battery to 1 V per
cell, the system automatically switches over to fast charge.

FUNCTIONAL DESCRIPTION
Control logic

The main function of the control logic is to support the
communication between several blocks. It also controls
the charge method, initialization and battery full detection.
The block diagram of the TEA1103x is illustrated in Fig.1.

Conditioning charge method and initializations

At system switch-on, or at battery insertion, the control
logic sets the initialization mode in the timer block.
After the initialization time the timer program pins can be
used to indicate the charging state using several LEDs.
The charge method is defined at the same time by the
following methods:

• If the FCT pin is floating, the system will charge the
battery according to the charge characteristic of NiCd
and NiMH batteries.

• The standby charge method (NiCd and NiMH), trickle
charge or voltage regulation, is defined by the input pin
V

stb

. By biasing this voltage with a set voltage, the output

voltage will be regulated to the V

stb

set voltage. If this pin
is connected to VS, or no NTC is connected the system
applies trickle charge.

1999 Jan 27 7

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

If pin RFSH is connected to ground by depressing the
switch, the TEA1103x discharges the battery via an
external transistor connected to pin RFSH. The discharge
current is regulated with respect to the external (charge)
sense resistor (R

sense

). End-of-discharge is reached when
the battery is discharged to 1 V per cell. Refreshing the
battery can only be activated during charging of NiCd and
NiMH batteries.

The inhibit mode has the main priority. This mode is
activated when the V

stb

input pin is connected to ground.
Inhibit can be activated at any charge/discharge state,
whereby the output control signals will be zero, all LEDs
will be disabled and the charger timings will be set on hold.
Table 1 gives an operational summary.

Table 1 Functionality of program pins

Notes

1. Where X = don’t care.

2. Not low means floating or high.

3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.

4. The NTC voltage is outside the window for NTC detection.

5. V

stb

has to be floating or set to a battery regulating voltage in accordance with the specification.

FUNCTION FCT NTC RFSH V

stb

Inhibit X

(1)

X

(1)

X

(1)

low

Refresh not low

(2)

X

(1)

low not low

∆T/∆t detection floating note 3 not low not low
∆T/∆t and voltage peak detection high note 3 not low not low

Voltage peak detection not low note 4 not low not low
Trickle charge at standby not low X

(1)

not low high

not low note 4 not low not low

Voltage regulation at standby not low note 3 not low floating

(5)

Supply block

The supply block delivers the following outputs:

• A power-on reset pulse to reset all digital circuitry at
battery insertion or supply switch-on. After a general
reset the system will start fast charging the battery.

• A 4.25 V stabilized voltage source (VS) is externally
available. This source can be used to set the thermistor
biasing, to initialize the programs, to supply the external
circuitry for battery voltage based charge indication and
to supply other external circuitry.

• A 4.25 V bias voltage (V

sl

) is available for use for more
indication LEDs. This output pin will be zero during the
initialization period at start-up, thus avoiding any
interference of the extra LEDs when initializing.

Charge control

The charge current is sensed via a low-ohmic resistor
(R

sense

), see Fig.4. A positive voltage is created across

resistor Rb by means of a current source I

ref

which is set by

R

ref

in the event of fast charge and by an internal bias
current source in the event of top-off and trickle charge
(IIB), see Fig.1. The positive node of Rb will be regulated to
zero via error amplifier A1, which means that the voltage
across Rb and R

sense

will be the same. The fast charge

current is defined by the following equation:

(1)

The output of amplifier A1 is available at the loop stability
pin LS, consequently the time constant of the current loop
can be set. When V

peak

(NiCd and NiMH) is applied, the
current sensing for the battery voltage will be reduced,
implying that the charge current will be regulated to zero
during:

(2)

Actually battery voltage sensing takes place in the last
oscillator cycle of this period.

I

fastRsense

× RbI

ref

×=

t

sense

210POD× t

osc

×=

1999 Jan 27 8

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

To avoid modulation on the output voltage, the top-off
charge current is DC regulated, defined by the following
equation:

(3)

where:

(4)

The top-off charge current will be approximately 0.15CA,
which maximizes the charge in the battery under safe and
slow charging conditions. The top-off charge period will be
approximately one hour, so the battery will be extra
charged with approximately 0.15 Q. In this way the battery
is fully charged before the system switches over to
standby.

When pin 1 (V

stb

) is connected to VS, or no NTC is
connected the system compensates the (self) discharge of
the battery by trickle charge. The trickle charge current will
be pulsating, defined by the following equation:

(5)

During the non current periods at trickle charge the charge
current is regulated to zero, so that the current for a load
connected in series across the battery with the sense
resistor will be supplied by the power supply and not by the
battery.

If at pin 1 (V

stb

) a reference voltage is set in accordance
with the specification, and no NTC is connected the charge
mode will switch over from current to voltage regulation
after top-off. The reference regulating voltage can be
adjusted to the battery characteristic by external resistors
connected to pin V

stb

.

This reference voltage has to be selected in such a way
that it equals the rest voltage of the battery. By using
voltage regulation, the battery will not be discharged at a
load occurrence. If the V

stb

input pin is floating, the
TEA1103x will apply voltage regulation at 1.325 V during
the standby mode (NiCd and NiMH). The current during
voltage regulation is limited to 0.5CA. If the battery charge
current is maximized to 0.5CA for more than 2 hours
charging will be stopped. Moreover, if the temperature
exceeds T

max

, charging will be stopped completely.
As voltage regulation is referred to one cell, the voltage on
the V

bat

pin must be the battery voltage divided by the

number of cells (NiCd and NiMH).
When charging, the standby mode can only be entered

after a certain period of time depending on time-out.
To support full test of the TEA1103x at application, the
standby mode is also entered when V

bat<Vbat(l)

at top-off.

I

top off–

R

sense

× Rb310

6–

××=

t

top off–

227TOD× t

osc

×=

I

trickleRsense

× R

b

15
16

------

× 10

6–

×=

Timer

The timing of the circuit is controlled by the oscillator
frequency.

The timer block defines the maximum charging time by
‘time-out’. At a fixed oscillator frequency, the time-out time
can be adapted by the Programmable Time-out Divider
(PTD) using the following equation.

(6)

The time-out timer is put on hold by low voltage,
temperature protection and during the inhibit mode.
The Programmable Oscillator Divider (POD) enables the
oscillator frequency to be increased without affecting
the sampling time and time-out. Raising the oscillator
frequency will reduce the size of the inductive components
that are used.

At fast charging, after battery insertion, after refresh or
supply interruption, the full detector will be disabled for a
period of time to allow a proper start with flat or inverse
polarized batteries. This hold-off period is disabled at fast
charging by raising pin V

stb

to above ±5 V (once).
So for test options it is possible to slip the hold-off period.
The hold-off time is defined by the following equation:

(7)

Table 2 gives an overview of the settings of timing and
discharge/charge currents.

t

time out–

226POD× PTD× t

osc

×=

t

hold off–

25–t

time out–

×=

1999 Jan 27 9

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Table 2 Timing and current formulae

SYMBOL DESCRIPTION FORMULAE

t

osc

timing see Fig.3

T

sampling

(∆T/∆t) NTC voltage sampling frequency

2

17

× POD × PSD × t

osc

T

sampling

(V

peak

) battery voltage sampling frequency

2

16

× POD × t

osc

t

top-off 2

27

× POD × t

osc

t

time-out 2

26

× POD × PTD × t

osc

t

hold-off 2

−5

× t

time-out

t

LED

inhibit or protection

2

14

× POD × t

osc

t

sense 2

10

× POD × t

osc

t

switch 2

21

× POD × PTD × t

osc

I

fast

charge/discharge currents

I

top-off

I

trickle

I

load-max

I

RFSH

R

b

R

sense

-----------------

V

ref

R

ref

----------

×

R

b

R

sense

-----------------

3× 10

6–

×

R

b

R

sense

-----------------

15
16

------

× 10

6–

×

R

b

R

sense

-----------------

40× 10

6–

×

100 mV

R

sense

--------------------

1999 Jan 27 10

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Fig.3 t

time-out

as a function of R23 and PTD with C4 as parameter.

handbook, full pagewidth

200

f

osc

(kHz)

0

0 30 60 90 120 150

t

time-out

(min)

180 10

12.5

(R23 min)

PTD programming

125

(R23 max)

30 50 70 90

R23 (kΩ)

C4

(pF)

110

68

100

150
220

390
560
820
1500

130

MGD280

40

80

120

160

:1

(GND):2(n.c.):4(+VS)

prefered

oscillator

range

(POD = GND)

prefered

oscillator

range

(POD = n.c.)

prefered

oscillator

range

(POD = +VS)

LED indication

With few external components, indication LEDs can be
connected to the program pins and the LED pin of the
TEA1103x. These program pins change their function from
an input to an output pin after a short initialization time at
system switch-on or battery insertion. Output pin V

sl

enables the external LEDs to be driven and avoids
interaction with the programming of the dividers during the
initialization period.

The applied LEDs indicate:

• Protection

• Refresh

• Fast charge

• 100%

• No-battery.

The LED output pin can also indicate the charging state by
one single LED. The indication LED can be connected
directly to the LED output. This single LED indicates:

• Fast charge (LED on)

• 100% or refresh (LED off)

• Protection or inhibit (LED floating).

The refresh can be indicated by an extra LED connected
to pin 4 (PSD). A buzzer can also be driven from the
TEA1103x to indicate battery insertion end of refresh or full
battery.

AD/DA converter

When battery full is determined by peak voltage detection,
the V

bat

voltage is sampled at a rate given by the following

equation:

(8)

The analog value of a V

bat

sample is then digitized and
stored in a register. On the following sample, the digitized
value is converted back to the analog value of V

bat

and

compared with the ‘new’ V

bat

sample.

t

samplingVpeak

()216POD× t

osc

×=

1999 Jan 27 11

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

At an increase of the battery voltage the 14-bit
Analog-to-Digital Converter (ADC) is refreshed with this
new value. Therefore, the digitized value always
represents the maximum battery voltage. A decreased
V

bat

voltage is not stored, but is compared to the stored

value.
Full is detected when the voltage decrease of V

bat

is1⁄4%
of the stored peak battery value. To avoid interference due
to the resistance of the battery contacts during battery
voltage sensing, the charge current is regulated to zero
during t = 210× POD × t

osc

, via the regulation pins AO and

PWM. At the last period, the V

bat

voltage is sensed and
stored in a sample-and-hold circuit. This approach
ensures very accurate detection of the battery full
condition (minus1⁄4%).

When battery full is determined by ∆T/∆t, the voltage on
the NTC pin is used as the input voltage to the AD/DA
converter. The sampling time at ∆T/∆t sensing is given by
the following equation:

(9)

After this initialized sample time the new temperature
voltage is compared to the preceding AD/DA voltage and
the AD/DA is refreshed with this new value. A certain
increase of the temperature is detected as full battery,
depending on the initialization settings. The decision of full
detection by ∆T/∆t or V

peak

is digitally filtered thus avoiding

false battery full detection.

t

sampling

∆T

∆t

-------





2

17

POD× PSD× t

osc

×=

Output drivers

The charge current regulation signal is available at two
output pins, AO and PWM.

A

NALOG OUTPUT

The analog control voltage output at pin 18 (AO) can be
used to drive an opto-coupler in mains separated
applications when an external resistor is connected
between AO and the opto-coupler. The maximum current
through the opto-coupler diode is 2 mA. The voltage gain
of amplifier A2 is typical 11 dB (times 3.5). The DC voltage
transfer is given by the following equation:

VAO= 3.5 × (VLS− 1.35).
The AO output can be used for:

• Linear (DC) applications

• Not mains isolated SMPS with a separate controller

• Mains isolated SMPS, controlled by an opto-coupler.

P

ULSE WIDTH MODULATOR (PWM)

The LS voltage is compared internally with the oscillator
voltage to deliver a pulse width modulated output at PWM
(pin 15) to drive an output switching device in a SMPS
converter application via a driver stage. The PWM output
is latched to prevent multi-pulsing. The maximum duty
factor is internally fixed to 79% (typ.). The PWM output can
be used for synchronization and duty factor control of a
primary SMPS via a pulse transformer.

1999 Jan 27 12

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); note 1

Note

1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the

voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not
violated; current ratings are valid provided that the power rating is not violated.

QUALITY SPECIFICATION

In accordance with the general quality specification for integrated circuits:

“SNW-FQ-611E

”.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltages

V

P

positive supply voltage −0.5 − +11.5 V

V

oLED

output voltage at pin 5 −0.5 − +15 V

V

n

voltage at pins PWM, LS and NTC −0.5 − +V

S

V

V

IB

voltage at pin 2 −0.5 − +1.0 V

Currents

I

VS

current at pin 16 −3 − +0.01 mA

I

Vsl

current at pin 13 −1 − +0.3 mA

I

oLED

output current at pin 5 −−12 mA

I

AO

output current at pin 18 −10 − +0.05 mA

I

oPWM

output current at pin 15 −15 − +14 mA

I

Rref

current at pin 20 −1 − +0.01 mA

I

P

positive supply current Tj< 100 °C −−30 mA

I

P(stb)

supply standby current VP=4V − 35 45 µA

Dissipation

P

tot

total power dissipation T

amb

=85°C
SOT146-1 −−1.2 W
SOT163-1 −−0.6 W
SOT339-1 −−0.45 W

Temperatures

T

amb

operating ambient temperature −20 − +85 °C

T

j

junction temperature −−150 °C

T

stg

storage temperature −55 − +150 °C

1999 Jan 27 13

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

CHARACTERISTICS

V

P

= 10 V; T

amb

=25°C; R

ref

=62kΩ; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies; pins V

P

, VS,R

ref

and V

sl

V

P

supply voltage 5.5 − 11.5 V

I

P

supply current outputs off; VP= 11.5 V − 46mA

I

stb

standby current VP=4V − 35 45 µA

V

clamp

clamping voltage (pin 12) I

clamp

= 30 mA 11.5 − 12.8 V

V

start

start voltage 6.1 6.4 6.7 V

V

LSP

low supply protection level 5.1 5.3 5.5 V

V

S

source voltage (stabilized) IS= 2 mA 4.14 4.25 4.36 V

V

SL

LED source voltage I

LED

=50µA 4.05 4.25 4.45 V

V

ref

reference voltage I

ref

=20µA; VP= 10 V 1.21 1.25 1.29 V

TC

Vref

temperature coefficient of the
reference voltage

T

amb

=0to45°C;

I

ref

=20µA; V

ref

= 1.25 V

0 ±60 ±120 ppm/K

∆V

ref

/∆V

P

power supply rejection ratio of
the reference voltage

f = 100 Hz; VP=8V;

∆VP= 2 V (p-p)

−46 −−dB

∆V

ref

load rejection of source
voltage

∆IS= 20 mA; VP=10V −− 5mV

I

Rref

current range of reference
resistor

10 − 100 µA

Charge current regulation; pins IB and R

ref

IIB/I

ref

fast charge ratio VIB=0

I

ref

=10µA 0.93 1.03 1.13

I

ref

= 100 µA 0.93 1.0 1.07

V

thIB

threshold voltage at pin IB T

amb

=25°C −2 − +2 mV

T

amb

=0to45°C −3 − +3 mV

I

IB

charge current top-off mode; VIB= 0 2.6 3.2 3.8 µA

I

IB(max)

maximum charge current voltage regulation full

NiCd/NiMH battery; VIB=0

9 10.5 12 µA

I

IB(Lmax)

maximum load current open battery; VIB= 0 34 42 50 µA

I

IB(LI)

input leakage current currentless mode −− 170 nA

Refresh; pin RFSH

V

Rsense

sense resistor voltage

; refresh

mode; I

refresh

=18mA

75 100 125 mV

V

RFSH

refresh voltage for
programming start of refresh

NiCd/NiMH 0 − 250 mV

V

bat

voltage at pin V

bat

for

detecting end of refresh

NiCd/NiMH 0.96 1.0 1.04 V

I

refresh

V

IB

R

sense

-----------------

=

1999 Jan 27 14

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

I

source(max)

maximum source current VIB=75mV; VP=10V

V

RFSH

= 2.7 V;

T

amb

=25°C

1.4 2 2.6 mA

V

RFSH(max)

maximum refresh voltage I

RFSH

= 1 mA 2.7 −−V

V

RFSH(off)

voltage at pin RFSH when
refresh is off

700 770 840 mV

Temperature related inputs; pins NTC and MTV

V

NTCh

input voltage at pin NTC for
detecting high temperature

pin MTV open-circuit 0.9 1 1.1 V
MTV setting 0.95MTV MTV 1.05MTV V

V

NTCh(hy)

hysteresis of V

NTCh

− 80 − mV

V

NTCl

input voltage at pin NTC,
detecting low temperature

2.7 2.8 2.9 V

V

NTCl(hy)

hysteresis of V

NTCl

− 75 − mV

V

NTC(co)

input voltage at pin NTC for
detecting temperature cut-off

0.7MTV 0.75MTV 0.8MTV V

V

NTC(bat)

maximum input voltage at
pin NTC for detecting battery
with NTC

3.22 3.3 3.38 V

I

NTC

input current at pin NTC V

NTC

=2V −5 − +5 µA

V

MTV

voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V

0.5 − 2.5 V

∆V

NTC/VNTC

∆T/∆t detection level V

NTC

=2V; Tj= 0 to 50 °C −−0.25 − %

Voltage regulation

V

reg

regulation voltage NiCd and NiMH;

pin V

stb

open-circuit

1.34 1.325 1.40 V

NiCd and NiMH;
V

stb

= 1.5 V

0.99V

stbVstb

1.01V

stb

V

open battery 1.86 1.9 1.94 V

TC

Vreg

temperature coefficient of
regulation voltage

V

reg

= 1.325 V;

T

amb

=0to45°C

0 ±60 ±120 ppm/K

g

m

transconductance of amplifierA3V

bat

= 1.9 V;

no battery mode

− 2.0 − mA/V

Program pin V

stb

V

stb

open voltage at pin V

stb

1.30 1.325 1.35 V

V

stb(im)

voltage at pin V

stb

for

programming inhibit mode

0 − 0.8 V

V

stb(st)

voltage at pin V

stb

for
programming voltage
regulation at standby

NiCd and NiMH 1.0 − 2.2 V

V

stb(tc)

voltage at pin V

stb

for
programming trickle charge at
standby

NiCd and NiMH 2.6 − V

S

V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jan 27 15

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Program pins; PSD, POD and PTD

V

4,6,7

voltage level at pins PSD,
POD or PTD

default (open-circuit) 1.9 2.1 2.3 V

V

4,6,7(1)

voltage level at pins PSD,
POD or PTD for programming
the divider = 1

0 − 1.2 V

V

4,6,7(2)

voltage level at pins PSD,
POD or PTD for programming
the divider = 2

1.6 − 2.5 V

V

4,6,7(4)

voltage level at pins PSD,
POD or PTD for programming
the divider = 4

3.1 − V

S

V

I

PODsink

protection current for
multi-LED indication

V

POD

= 1.5 V 8 10 12 mA

I

PTDsink

full battery current for
multi-LED indication

V

PTD

= 1.5 V 8 10 12 mA

I

PSDsink

refresh current for multi-LED
indication

V

PSD

= 1.5 V 8 10 12 mA

I

LI

input leakage current V

POD

= 4.25 V;

V

PTD

= 4.25 V;

V

PSD

= 4.25 V

0 − 50 µA

Program pin FCT

V

FCT(or)

voltage level for programming
∆T/∆t or V

peak

as fast charge

termination

NiCd and NiMH 0.0 − 3.3 V

V

FCT(and)

voltage level for programming
∆T/∆t and V

peak

as fast charge

termination

NiCd and NiMH 3.7 − V

S

V

V

FCT

voltage level at pin FCT default (open-circuit) 2.3 2.6 2.9 V

Program pin LED

V

LED(m)

output voltage level for
programming multi-LED
indication

0 − 2.5 V

V

LED(s)

output voltage level for
programming single LED
indication

3.1 − V

P

V

I

sink(max)

maximum sink current V

LED

= 1.5 V 8 10 12 mA

I

LI(LED)

input leakage current V

LED

=10V 0 − 70 µA

V

LED

= 0.6 V 0 − 5 µA

V

o(max)

maximum output voltage −− 15 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jan 27 16

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Output drivers; AO, LS and PWM

I

AO(source)

analog output source current VAO= 3 V (p-p);

VLS= 2.8 V

−9 − 0mA

I

AO(sink)

analog output sink current VAO= 3 V (p-p);

VLS= 1.2 V

50 −−µA

g

m1

transconductance of amplifierA1VIB=50mV − 250 −µA/V

G

v1,2

voltage gain of amplifiers
A1 and A2

VAO= 3 V (p-p) − 72 − dB

G

v2

voltage gain of amplifier A2 VAO= 2 V (p-p) − 11 − dB

I

LS(source)

maximum source current
(pin LS)

VLS= 2.25 V −25 −21 −16 µA

I

LS(sink)

maximum sink current
(pin LS)

VLS= 2.25 V 16 21 25 µA

I

OH(PWM)

HIGH level output current V

PWM

=3V −19 −15 −11 mA

I

OL(PWM)

LOW level output current V

PWM

=0.7V 1014 18mA

δ

PWM

maximum duty factor − 79 − %

Battery monitor; V

bat

I

Vbat

battery monitor input current V

bat

= 1.85 V − 1 − nA

V

bat

voltage range of V

peak

detection

0.3 − 2V

∆V

bat/Vbat

V

peak

detection level with

respect to top level

V

bat

= 1.85 V;

Tj= 0 to 50 °C

−−0.25 − %

∆V

bat

voltage resolution for V

peak

− 0.6 − mV

Protections; V

bat

V

bat(l)

maximum voltage at pin V

bat

for detecting low battery
voltage

0.25 0.30 0.35 V

Oscillator; pin OSC

V

osc(H)

HIGH level oscillator switching
voltage

− 2.5 − V

V

osc(L)

LOW level oscillator switching
voltage

− 1.5 − V

f

osc(min)

minimum oscillator frequency R

ref

= 125 kΩ;

C

osc

= 400 pF

20.9 23 25.1 kHz

f

osc(max)

maximum oscillator frequency R

ref

= 12.5 kΩ;

C

osc

= 400 pF

158 174 190 kHz

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jan 27 17

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH

batteries

TEA1103; TEA1103T;

TEA1103TS

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APPLICATION INFORMATION

handbook, full pagewidth

MBH545

V

P

1213

V

S

16

NTC

8

C3 100 nF

4.25 V

NTC
10 kΩ
(25

o

C)

R19

75 kΩ

MTV

9

FCT

11

V

stb

1

V

bat

19

R

ref

20

OSC

14

GND

3

R16

R15
270 Ω

R24
80 kΩ
(0.1%)

R17

R20

∆T/∆t

and

V

peak

∆T/∆t

or

V

peak

R21P2R22

P1
T

max

adjust.

V

reg

adjust.

8.2 kΩ

130 kΩ

R18

24 kΩ

47 kΩ

47 kΩ

16 kΩ 15 kΩ 12 kΩ

R

sense

(1A refresh)
R14 0.1 Ω

(1)

NiCd 9

NiCd
NiMH
3/6/9 cell

NiMH 9

NiCd 6
NiMH 6

NiCd 3
NiMH 3

(3)

R25
40 kΩ
(0.1%)

R23
62 kΩ
(1A fast
charge)

C4
220
pF

C5
470
µF

R26
8 kΩ
(0.1%)

R28
10 kΩ
(0.1%)

R27
8 kΩ
(0.1%)

V

sl

5

LED

:4
:1

6

POD

V

S

GND

protection

D5

fast

D4

D8

33 kΩ

R6

33 kΩ

R7

:4
:1

7

PTD

V

S

GND

100%

D6

D2

D3

BAW62

33 kΩ

R8

33 kΩ

R9

:4
:1

4

PSD

15

PWM

SMPS mode

linear mode

18

AO

17

LS

10

RFSH

2

IB

V

S

GND

refresh

D6

33 kΩ

R10

33 kΩ

R11

single

multi
LED

R5

750

Ω

R2

62 Ω

R1

1

kΩ

R3

1.5 kΩ

no-

battery

TR3
BC337

TR2

BC337

C1
100 µF

TR1

BD231

D1
BYD74D

VI (DC)>13V

R4 3.9 kΩ

L1

(SMPS only)

VI (DC)

7 to 18 V

400 µH

BYV28
(only for

more than

3 cells

R13

(2)

5.1 kΩ
(0.15A top off)

C2

1.5 nF

R12
0 Ω

(Rb)

TEA1103

refresh

TR4

TIP110

6 kΩ

LOAD

only for

Fig.4 Basic test board diagram.

(1) or if not applicable.

(2)

(3)

R14

100 mV

I

refresh

--------------------

= R14

100 mV

I

fast ch earg–

-----------------------------

=

R13

R14 I

top off–

×

3 µA

------------------------------------

=

R23

1.25 R13×

R14 I

fast ch earg–

×

-----------------------------------------------

=

1999 Jan 27 18

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Fig.5 Linear application diagram.

handbook, full pagewidth

MBH546

13 12

V

P

R10
200 kΩ
(1%)

R9
100 kΩ
(0.1%)

V

sl

16

V

S

8

NTC

9

MTV

11

FCT

1

V

stb

19

V

bat

20

R

ref

14

OSC

3

GND

5

LED

(R

supply

= 270 Ω for more than 3 NiCd cells)

(D2 for more than 3 NiCd cells)

D1

POD

PTD

6

7

TEA1103

V

S

GND

V

S

GND

PSD

4

PWM

15

AO

18

RFSH

10

LS

17

IB

2

V

S

GND

:4

:1

:4

:1

:4

:1

R4

5.1 kΩ
(75 mA top off)

(Rb)

TR2

BC337

R3
180 Ω

C2 1.5 nF

R5 0.22 Ω

R

sense

R1
1 kΩ

R2

1.5
kΩ

R6
10 kΩ

TR1 BD231

VI (DC)

7 to 11.5 V

C1
100 µF

C5
470 µF

C3

100 nF

4.25 V

NiCd/NiMH =

∞

R7

C4
220 pF
(f

osc

=

75 kHz)

R8
62 kΩ
(0.5 A
fast
charge)

− battery

+ battery

NiCd
NiMH
3 cells

1999 Jan 27 19

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Fig.6 Component side of printed-circuit board (test board).

handbook, full pagewidth

MBH073

TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN

R28

R6

V

sense

D1

R14

D3

D2

D6

D5

D4

D7

R19

R2

C3

C7

R26

1L 2L 3L

R27

R25

P2

V

stb

R24

C6

C4

C2

R16

R17

R20

R21

R22

R29

R12

R10

R4

R3

R15

R23

R30

R13

GND

GND

I

b

V

sl

R11

R7

R8

R9

R18

R5

MTV

FCT

SLA
Li-Ion
dT/dt or V
dT/dt and V

TR2

number

of

cells

LIN

PWM

PWM

NTC

NTC

P1

refresh

fast-charge

protection

100%

no-battery

−V

in

−BAT

+V

in

+V

s

+BAT

1

PTD

L1

D8

TR1

TR4

TR3

R1

C1

C5

refresh

D9
D10

LIN

:4PSD:1 :4POD:1S-LED-M

V

bat

This test board (designed for the TEA1102x) can also be used for the TEA1103x.

1999 Jan 27 20

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Fig.7 Track side of printed-circuit board (test board).

handbook, full pagewidth

MBH072

86.35

81.28

Dimensions in mm.

1999 Jan 27 21

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Fig.8 Component side of printed-circuit board (linear application).

handbook, full pagewidth

MBH071

TEA1102 LINEAR JB D&A CIC NIJM

+V

in

+battery

−V

in

−battery

TR1

R1

R8

R3

R2

R4

R5

R6

C3

C4

C5

C2

R7

R9

R10

D1

PSD

POD
PTD

:1 :4

C1

1

TR2

This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.

Fig.9 Track side of printed-circuit board (linear application).

handbook, full pagewidth

MBH070

TEA1102 LINEAR JB D&A CIC NIJM

This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.

1999 Jan 27 22

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

PACKAGE OUTLINES

UNIT

A

max.

1 2

b

1

cD E e M

H

L

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT146-1

92-11-17
95-05-24

A

min.

A

max.

b

Z

max.

w

M

E

e

1

1.73

1.30

0.53

0.38

0.36

0.23

26.92

26.54

6.40

6.22

3.60

3.05

0.2542.54 7.62

8.25

7.80

10.0

8.3

2.04.2 0.51 3.2

0.068

0.051

0.021

0.015

0.014

0.009

1.060

1.045

0.25

0.24

0.14

0.12

0.010.10 0.30

0.32

0.31

0.39

0.33

0.0780.17 0.020 0.13

SC603

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

20

1

11

10

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)

(1) (1)

DIP20: plastic dual in-line package; 20 leads (300 mil)

SOT146-1

1999 Jan 27 23

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

UNIT

A

max.

A

1

A

2

A3b

p

cD

(1)E(1) (1)

eHELLpQ

Z

ywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

2.65

0.30

0.10

2.45

2.25

0.49

0.36

0.32

0.23

13.0

12.6

7.6

7.4

1.27

10.65

10.00

1.1

1.0

0.9

0.4

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT163-1

10

20

w M

b

p

detail X

Z

e

11

1

D

y

0.25

075E04 MS-013AC

pin 1 index

0.10

0.012

0.004

0.096

0.089

0.019

0.014

0.013

0.009

0.51

0.49

0.30

0.29

0.050

1.4

0.055

0.419

0.394

0.043

0.039

0.035

0.016

0.01

0.25

0.01

0.004

0.043

0.016

0.01

0 5 10 mm

scale

X

θ

A

A

1

A

2

H

E

L

p

Q

E

c

L

v M

A

(A )

3

A

SO20: plastic small outline package; 20 leads; body width 7.5 mm

SOT163-1

95-01-24
97-05-22

1999 Jan 27 24

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

UNIT A1A2A3b

p

cD

(1)E(1)

eHELLpQ

(1)

Zywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.21

0.05

1.80

1.65

0.38

0.25

0.20

0.09

7.4

7.0

5.4

5.2

0.65

7.9

7.6

0.9

0.7

0.9

0.5

8
0

o
o

0.131.25 0.2 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

1.03

0.63

SOT339-1 MO-150AE

93-09-08
95-02-04

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

110

20 11

y

0.25

pin 1 index

0 2.5 5 mm

scale

SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm

SOT339-1

A

max.

2.0

1999 Jan 27 25

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

SOLDERING
Introduction

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

S

OLDERING BY DIPPING OR BY SOLDER WAVE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg(max)

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

M

ANUAL SOLDERING

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

W

AVE SOLDERING

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

M

ANUAL SOLDERING

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Jan 27 26

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

Suitability of IC packages for wave, reflow and dipping soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

MOUNTING PACKAGE

SOLDERING METHOD

WAVE REFLOW

(1)

DIPPING

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable

(2)

− suitable

Surface mount HLQFP, HSQFP, HSOP, SMS not suitable

(3)

suitable −

PLCC

(4)

, SO suitable suitable −

LQFP, QFP, TQFP not recommended

(4)(5)

suitable −
SQFP not suitable suitable −
SSOP, TSSOP, VSO not recommended

(6)

suitable −

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1999 Jan 27 27

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1999 SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

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Norway: Box 1, Manglerud 0612, OSLO,

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Pakistan: see Singapore
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Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

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For all other countries apply to: Philips Semiconductors,
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Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

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Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

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Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

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Hungary: see Austria
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Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
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Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
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Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
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Printed in The Netherlands 465002/750/03/pp28 Date of release: 1999 Jan 27 Document order number: 9397 750 04794