Datasheet TEA1068T, TEA1068 Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

DATA SH EET

TEA1068

Versatile telephone transmission circuit with dialler interface

Product speciﬁcation Supersedes data of June 1990 File under Integrated Circuits, IC03

1996 Apr 23

Page 2

Philips Semiconductors Product speciﬁcation

V ersatile telephone transmission circuit

TEA1068

with dialler interface

FEATURES

• Voltage regulator with adjustable static resistance

• Provides supply for external circuitry

• Symmetrical high-impedance inputs (64 kΩ) for

dynamic, magnetic or piezoelectric microphones

• Asymmetrical high-impedance input (32 kΩ) for electret microphone

• Dual-Tone Multi-Frequency (DTMF) signal input with confidence tone

• Mute input for pulse or DTMF dialling

• Power down input for pulse dial or register recall

• Receiving amplifier for magnetic, dynamic or

piezoelectric earpieces

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V I

line

line voltage I line current

TEA1068 normal operation 10 − 140 mA TEA1068T normal operation 10 − 100 mA

internal supply current power down; input LOW − 0.96 1.3 mA

supply voltage for peripherals I

voltage gain

microphone amplifier 44 − 60 dB receiving amplifier 17 − 39 dB

∆G

exch

amb

line loss compensation gain control range 5.5 5.9 6.3 dB exchange supply voltage 24 − 60 V exchange feeding bridge resistance range 0.4 − 1kΩ ambient operating temperature −25 +75 °C

• Large gain setting range on microphone and earpiece amplifiers

• Line current-dependent line loss compensation facility for microphone and earpiece amplifiers

• Gain control adaptable to exchange supply

• DC line voltage adjustment facility.

GENERAL DESCRIPTION

The TEA1068 is a bipolar integrated circuit performing all speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between dialling and speech.

= 15 mA 4.2 4.45 4.7 V

line

power down; input HIGH − 55 82 µA

= 15 mA;

line

MUTE = HIGH

= 1.2 mA 2.8 3.05 − V

= 1.7 mA 2.5 −−V

ORDERING INFORMATION

TYPE

NUMBER

TEA1068 DIP18 TEA1068T SO20

NAME DESCRIPTION VERSION

plastic dual in-line package; 18 leads (300 mil) SOT102-1 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

1996 Apr 23 2

PACKAGE

Page 3

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

BLOCK DIAGRAM

11 (12)

8 (9) 7 (7)

15 (17) 1 (1)

TEA1068

TEA1068T

handbook, full pagewidth

MIC+ MIC−

6 (6) 5 (5) 4 (4)

2 (2)

TEA1068

GAR QR+ QR−

GAS1

13 (15)

14 (16)

12 (14)

SUPPLY AND REFERENCE

DTMF

MUTE

The figures in parentheses refer to the TEA1068T.

CIRCUIT

CURRENT

REFERENCE

16 (18) 17 (19)10 (11)

Fig.1 Block diagram.

AGC

9 (10) 18 (20)

MBH130

3 (3)

GAS2

SLPESTABAGCREGV

1996 Apr 23 3

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Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

PINNING

SYMBOL

TEA1068 TEA1068T

LN 1 1 positive line terminal GAS1 2 2 gain adjustment transmitting ampliﬁer GAS2 3 3 gain adjustment transmitting ampliﬁer QR− 4 4 inverting output receiving ampliﬁer QR+ 5 5 non-inverting output receiving ampliﬁer GAR 6 6 gain adjustment receiving ampliﬁer MIC− 7 7 inverting microphone input n.c. − 8 not connected MIC+ 8 9 non-inverting microphone input STAB 9 10 current stabilizer V

IR 11 12 receiving ampliﬁer input n.c. − 13 not connected PD 12 14 power-down input DTMF 13 15 dual-tone multi-frequency input MUTE 14 16 mute input V

REG 16 18 voltage regulator decoupling AGC 17 19 automatic gain control input SLPE 18 20 slope (DC resistance) adjustment

DESCRIPTION

10 11 negative line terminal

15 17 positive supply decoupling

TEA1068

handbook, halfpage

LN GAS1 GAS2

QR− QR+

GAR

MIC−

MIC+

STAB

1 2 3 4 5 6 7 8 9

TEA1068

MBH132

SLPE

AGC

17 16

REG V

MUTE

DTMF

12 11

IR V

Fig.2 Pin configuration TEA1068.

1996 Apr 23 4

handbook, halfpage

Fig.3 Pin configuration TEA1068T.

LN GAS1 GAS2

QR− QR+

GAR

MIC−

n.c.

MIC+

STAB

1 2 3 4 5

TEA1068T

6 7 8 9

MBH131

SLPE AGC

19 18

REG V

MUTE

DTMF PD

14 13

n.c. IR

Page 5

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

FUNCTIONAL DESCRIPTION Supplies: V

Power for the TEA1068 and its peripheral circuits is usually obtained from the telephone line. The TEA1068 develops its own supply at V supply voltage VCC may also be used to supply external circuits, e.g. dialling and control circuits.

Decoupling of the supply voltage is performed by a capacitor between VCC and VEE; the internal voltage regulator is decoupled by a capacitor between REG and VEE.

The DC current flowing into the set is determined by the exchange voltage (V (R

) and the DC resistance of the telephone line (R

exch

An internal current stabilizer is set by a resistor of 3.6 kΩ between the current stabilizer pin STAB and V (see Fig.9).

If the line current I required by the circuit itself (approximately 1 mA) plus the current Ip required by the peripheral circuits connected to VCC, then the voltage regulator diverts the excess current via LN.

The regulated voltage on the line terminal (VLN) can be calculated as:

VLN=V

where V compensated reference voltage of 4.2 V and R9 is an external resistor connected between SLPE and VEE. The preferred value for R9 is 20 Ω. Changing the value of R9 will also affect microphone gain, DTMF gain, gain control characteristics, side-tone level, the maximum output swing on LN and the DC characteristics (especially at lower voltages).

Under normal conditions, when I the static behaviour of the circuit is that of a 4.2 V regulator diode with an internal resistance equal to that of R9. In the audio frequency range, the dynamic impedance is largely determined by R1 (see Fig.4).

The internal reference voltage can be adjusted by means of an external resistor (RVA). This resistor, connected between LN and REG, will decrease the internal reference voltage; when connected between REG and SLPE, it will increase the internal reference voltage. Current (Ip) available from VCC for supplying peripheral circuits

, LN, SLPE, REG and STAB

and regulates its voltage drop. The

), the feeding bridge resistance,

exch

exceeds the current ICC+ 0.5 mA

line

ref+ISLPE

+ [(I

ref

is an internally generated temperature

ref

× R9

− ICC− 0.5 × 103) − Ip] × R9

line

>> ICC+ 0.5 mA + Ip,

SLPE

line

TEA1068

depends on external components and on the line current. Figure 10 shows this current for V VCC> 3 V, this being the minimum supply voltage for most CMOS circuits, including voltage drop for an enable diode. If MUTE is LOW, the available current is further reduced when the receiving amplifier is driven.

andbook, halfpage

Rp= 17.5kΩ Leq= C3 × R9 × R

ref

R9 20 Ω

Fig.4 Equivalent impedance circuit.

Microphone inputs MIC+ and MIC− and gain adjustment pins GAS1 and GAS2

The TEA1068 has symmetrical microphone inputs. Its input impedance is 64 kΩ (2 × 32 kΩ) and its voltage gain is typically 52 dB (when R7 = 68 kΩ; see Fig.14). Dynamic, magnetic, piezoelectric or electret (with built-in FET source followers) microphones can be used.

The arrangements with the microphone types mentioned are shown in Fig.11.

The gain of the microphone amplifier can be adjusted between 44 dB and 60 dB. The gain is proportional to the value of the external resistor R7 connected between GAS1 and GAS2. An external capacitor C6 of 100 pF between GAS1 and SLPE is required to ensure stability. A larger value may be chosen to obtain a first-order low-pass filter. The cut-off frequency corresponds with the time constant R7 × C6.

> 2.2 V and for

REG

4.7 µF

MBA454

C1 100 µF

1996 Apr 23 5

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Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

Mute input (MUTE)

A HIGH level at MUTE enables the DTMF input and inhibits the microphone and the receiving amplifier inputs.

A LOW level or an open circuit has the reverse effect. MUTE switching causes only negligible clicks at the earpiece outputs and on the line.

Dual-Tone Multi Frequency input (DTMF)

When the DTMF input is enabled, dialling tones may be sent onto the line. The voltage gain from DTMF to LN is typically 25.5 dB (when R7 = 68 kΩ) and varies with R7 in the same way as the gain of the microphone amplifier. The signalling tones can be heard in the telephone earpiece at a low level (confidence tone).

Receiving ampliﬁer: IR, QR+, QR− and GAR

The receiving amplifier has one input IR and two complementary outputs, a non-inverting output QR+ and an inverting output QR−. These outputs may be used for single-ended or for differential drive depending on the sensitivity and type of earpiece used (see Fig.12). Gain from IR to QR+ is typically 25 dB (when R4 = 100 kΩ). This is sufficient for low-impedance magnetic or dynamic microphones, which are suited for single-ended drive. By using both outputs (differential drive), the gain is increased by 6 dB. This feature can be used when the earpiece impedance exceeds 450 Ω, (high-impedance dynamic or piezoelectric types).

The output voltage of the receiving amplifier is specified for continuous-wave drive. The maximum output voltage will be higher under speech conditions where the ratio of peak to RMS value is higher.

The receiving amplifier gain can be adjusted between 17 dB and 33 dB with single-ended drive and between 26 dB and 39 dB with differential drive to suit the sensitivity of the transducer used. The gain is set by the external resistor R4 connected between GAR and QR+. Overall receive gain between LN and QR+ is calculated by subtracting the anti-side-tone network attenuation (32 dB) from the amplifier gain. Two external capacitors, C4 = 100 pF and C7 = 10 × C4 = 1 nF, are necessary to ensure stability. A larger value of C4 may be chosen to obtain a first-order, low-pass filter. The ‘cut-off’ frequency corresponds with the time constant R4 × C4.

TEA1068

Automatic Gain Control input AGC

Automatic line loss compensation is achieved by connecting a resistor R6 between AGC and V automatic gain control varies the microphone amplifier gain and the receiving amplifier gain in accordance with the DC line current.

The control range is 5.9 dB. This corresponds to a line length of 5 km for a 0.5 mm diameter copper twisted-pair cable with a DC resistance of 176 Ω/km and an average attenuation 1.2 dB/km.

Resistor R6 should be chosen in accordance with the exchange supply voltage and its feeding bridge resistance (see Fig.13 and Table 1). Different values of R6 give the same ratio of line currents for start and end of the control range. If automatic line loss compensation is not required, AGC may be left open. The amplifiers then all give their maximum gain as specified.

Power-Down input (PD)

During pulse dialling or register recall (timed loop break), the telephone line is interrupted. During these interruptions, the telephone line provides no power for the transmission circuit or circuits supplied by V held on C1 will bridge these gaps. This bridging is made easier by a HIGH level on the PD input, which reduces the typical supply current from 1 mA to 55 µA and switches off the voltage regulator, thus preventing discharge through LN. When PD is HIGH, the capacitor at REG is disconnected with the effect that the voltage stabilizer will have no switch-on delay after line interruptions. This minimizes the contribution of the IC to the current waveform during pulse dialling or register recall. When this facility is not required, PD may be left open-circuit.

Side-tone suppression

Suppression of the transmitted signal in the earpiece is obtained by the anti-side-tone network consisting of R1//Z

, R2, R3 and Z

line

(see Fig.14). Maximum

bal

compensation is obtained when the following conditions are fulfilled:

R9 R2× R1 R3 R8//Z

balZbal

R8+()⁄ Z

[]+()=

bal

lineZline

R1+()⁄=[]

. This

. The charge

(1) (2)

1996 Apr 23 6

Page 7

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

If fixed values are chosen for R1, R2, R3 and R9, then condition (1) will always be fulfilled, provided that R8//Z suppression, condition (2) has to be fulfilled, resulting in:

bal

k = (R8/R1). Scale factor k (dependent on the value of R8) must be

chosen to meet the following criteria:

1. Compatibility with a standard capacitor from the E6 or

2. Z

3. Z

In practice, Z cable type; consequently, an average value has to be

 << R3. To obtain optimum side-tone

bal

= (R8/R1) Z

E12 range for Z

//R8<< R3 to fulfil condition (1) and thus

bal

line

= k × Z

bal

, where k is a scale factor:

line

ensuring correct anti-side-tone bridge operation

+R8>> R9 to avoid influencing the transmitter

bal

gain.

varies greatly with the line length and

line

TEA1068

chosen for Z long lines.

Example: the balanced line impedance (Z optimum suppression is preset can be calculated by:

Assume Z 5 km line of 0.5 mm diameter, copper, twisted-pair cable matched to 600 Ω (176 Ω/km; 38 nF/km). When k = 0.64, then R8 = 390 Ω; Z

The anti-side-tone network for the TEA1060 family shown in Fig.5 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range.

Figure 6 shows a conventional Wheatstone bridge anti-side-tone circuit that can be used as an alternative. Both bridge types can be used with either resistive or complex set impedances.

, thus giving an optimum setting for short or

bal

) at which the

bal

= 210 Ω + (1265 Ω/140 nF), representing a

line

= 130 Ω + (820 Ω//220 nF).

bal

handbook, full pagewidth

line

SLPE

bal

MSA500

Fig.5 Equivalent circuit of TEA1060 family anti-side-tone bridge.

1996 Apr 23 7

Page 8

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

book, full pagewidth

line

Fig.6 Equivalent circuit of an anti-side-tone network in a Wheatstone bridge configuration.

SLPE

TEA1068

bal

MSA501

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V

LN LN(R)

positive continuous line voltage − 12 V repetitive line voltage during switch-on or

− 13.2 V

line interruption

LN(RM)

line

tot

repetitive peak line voltage for a 1 ms pulse per 5 s

R9 = 20 Ω; R10 = 13 Ω; (Fig.15)

− 28 V

line current R9= 20 Ω; note 1 − 140 mA voltage on any other pin VEE− 0.7 VCC+ 0.7 V total power dissipation R9= 20 Ω; note 2

TEA1068 − 769 mW TEA1068T − 555 mW

stg

amb

IC storage temperature −40 +125 °C operating ambient temperature −25 +75 °C junction temperature − 125 °C

Notes

1. Mostly dependent on the maximum required T

and on the voltage between LN and SLPE. See Figs 7 and 8 to

amb

determine the current as a function of the required voltage and the temperature.

2. Calculated for the maximum ambient temperature specified T

= 75 °C and a maximum junction temperature of

amb

125 °C.

1996 Apr 23 8

Page 9

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

th j-a

160

handbook, halfpage

(mA)

140

120

100

thermal resistance from junction to ambient in free air

TEA1068 65 K/W TEA1068T 90 K/W

MBH133

(1)

(2)

(3)

(4)

150

handbook, halfpage

(mA)

130

110

MBH125

(1)

(2)

(3)

(1) T (2) T (3) T (4) T

212

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

46810

= 1231 mW.

tot

= 1077 mW.

tot

= 923 mW.

tot

= 769 mW.

tot

Fig.7 Safe operating area TEA1068.

VLN-V

SLPE

(V)

(1) T (2) T (3) T (4) T

212

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

46810

= 888 mW.

tot

= 777 mW.

tot

= 666 mW.

tot

= 555 mW.

tot

Fig.8 Safe operating area TEA1068T.

VLN − V

SLPE

(4)

(V)

1996 Apr 23 9

Page 10

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

CHARACTERISTICS

= 10 to 140 mA; VEE= 0 V; f = 800 Hz; T

line

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies: LN and V

voltage drop over circuit between LN and V

∆V

/∆T voltage drop variation with

temperature

voltage drop over circuit, between LN and VEE with external resistor R

supply current VCC= 2.8 V

supply voltage available for peripheral circuitry

Microphone inputs MIC+ and MIC− Zi input impedance differential between

CMRR common mode rejection ratio − 82 − dB G

∆G

voltage gain from MIC+/MIC− to LN I gain variation with frequency at

f = 300 Hz and f = 3400 Hz

∆G

gain variation with temperature at

−25 °C and +75 °C

=25°C; unless otherwise speciﬁed.

amb

microphone inputs open

= 5 mA 3.95 4.25 4.55 V

line

= 15 mA 4.2 4.45 4.7 V

line

= 100 mA 5.4 6.1 6.7 V

line

= 140 mA −−7.5 V

line

=15mA −4 −2 0 mV/K

line

=15mA

line

(LN to REG) = 68 kΩ 3.45 3.8 4.1 V

(REG to SLPE) = 39 kΩ 4.65 5 5.35 V

PD = LOW − 0.96 1.3 mA PD = HIGH − 55 82 µA

= 15 mA; MUTE = HIGH

line

= 1.2 mA 2.8 3.05 − V

= 0 mA 3.5 3.75 − V

51 64 77 kΩ

MIC+ and MIC− single-ended MIC+ or

MIC− to V

line

= 15 mA; R7 = 68 kΩ;515253dB

25.5 32 38.5 kΩ

with respect to 800 Hz −0.5 ±0.2 +0.5 dB

=50mA;

line

−±0.2 − dB with respect to 25 °C; without R6

Dual-tone multi-frequency input DTMF

Zi input impedance 16.8 20.7 24.6 kΩ G ∆G

voltage gain from DTMF to LN I gain variation with frequency at

= 15 mA; R7 = 68 kΩ 24.5 25.5 26.5 dB

line

with respect to 800 Hz −0.5 ±0.2 +0.5 dB

f = 300 Hz and f = 3400 Hz

∆G

gain variation with temperature at T

=−25 °C and +75 °C

amb

=50mA;

line

with respect to 25 °C

−±0.5 − dB

Gain adjustment connections GAS1 and GAS2

∆G

gain variation with R7, transmitting

−8 − +8 dB

ampliﬁer

1996 Apr 23 10

Page 11

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transmitting ampliﬁer output LN

LN(rms)

no(rms)

output voltage (RMS value) I

noise output voltage (RMS value) I

Receiving ampliﬁer input IR

 input impedance 17 21 25 kΩ

Z

Receiving ampliﬁer outputs QR+ and QR− Z

 output impedance single ended − 4 −Ω

voltage gain from IR to QR+ or QR−

∆G

gain variation with frequency at f = 300 Hz and f = 3400 Hz

∆G

o(rms)

no(rms)

gain variation with temperature at T

=−25 °C and +75 °C

amb

output voltage (RMS value) sine wave drive; I

noise output voltage (RMS value) I

Gain adjustment GAR

∆G

gain variation of receiving ampliﬁer achievable by varying R4 between GAR and QR

=15mA

line

THD = 2% 1.9 2.3 − V THD = 10% − 2.6 − V

= 15 mA; R7 = 68 kΩ;

line

−−72 − dBmp 200 Ω between MIC− and MIC+; psophometrically weighted (P53 curve)

=15mA

line

(from QR+ or

24 25 26 dB

QR−) = 300 Ω; single-ended

(from QR+ or

30 31 32 dB

QR−) = 600 Ω; differential

with respect to 800 Hz −0.5 −0.2 0 dB

=50mA;

line

−±0.2 − dB with respect to 25 °C; without R6

= 15 mA;

line

Ip= 0 mA; THD = 2%; R4 = 100 kΩ

single-ended; R single-ended; R differential; f = 3400 Hz;

= 100 Ω; CL=47nF

series

= 15 mA; R4 = 100 kΩ;

line

= 150 Ω 0.3 0.38 − V

= 450 Ω 0.4 0.52 − V

0.8 1.0 − V

IR open-circuit psophometrically weighted (P53 curve)

single-ended; R differential; R

= 300 Ω− 50 −µV

= 600 Ω−100 −µV

−8 − +8 dB

1996 Apr 23 11

Page 12

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

MUTE input

MUTE

∆G

HIGH level input voltage 1.5 − V LOW level input voltage −−0.3 V input current − 815µA voltage gain reduction between

MIC+ and MIC− to LN

voltage gain from DTMF to QR+ or QR−

Power-Down input PD

HIGH level input voltage 1.5 − V LOW level input voltage −−0.3 V input current in power-down

condition

Automatic Gain Control input AGC

∆G

gain control range from IR to QR+/QR− and from MIC+/MIC− to LN

line(H)

highest line current for maximum gain

line(L)

lowest line current for minimum gain

∆G

voltage gain variation between I

MUTE = HIGH − 70 − dB

MUTE = HIGH; R4 = 100 kΩ;

−21 −19 −17 dB single-ended; RL= 300 Ω

− 510µA

= 70 mA; R6 = 110kΩ

line

between AGC and V

R6 = 110 kΩ between AGC and V

= 15 mA and

line

= 35 mA; R6 = 110kΩ

line

between AGC and V

−5.5 −5.9 −6.3 dB

− 23 − mA

− 61 − mA

−1.0 −1.5 −2.0 dB

ndbook, full pagewidth

exch

line

TEA1068

DC AC

line

+ 0.5 mA

SLPE

C3 R5 R9

Fig.9 Supply arrangement.

1996 Apr 23 12

SLPESTABREG

0.5 mA

peripheral

circuits

MBH134

Page 13

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

handbook, halfpage

Curve (1) is valid when the receiving amplifier is not driven or when MUTE = HIGH. Curve (2) is valid when MUTE = LOW and the receiving amplifier is driven; V

The supply possibilities can be increased simply by setting the voltage drop over the circuit VLN to a higher value by means of resistor RVA connected between REG and SLPE.

= 150 mV; RL= 150 Ω asymmetrical.

o(rms)

(mA)

(1)

(2)

(3)

(4)

MBH124

(V)

Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC≥ 2.2 V.

handbook, full pagewidth

(1)

a. Magnetic or dynamic

microphone.

MIC+

MIC−

MIC+

MIC−

MBH135

b. Electret microphone. c. Piezoelectric microphone.

(1) May be connected to decrease the terminating impedance.

Fig.11 Alternative microphone arrangements.

1996 Apr 23 13

Page 14

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

handbook, full pagewidth

QR+

QR−

a. Dynamic earpiece

with less than 450 Ω

impedance.

b. Dynamic earpiece with

QR+

QR−

more than 450 Ω

impedance.

QR+

QR−

(1)

c. Magnetic earpiece with more than 450 Ω

impedance.

TEA1068

QR+

QR−

d. Piezoelectric

earpiece.

(2)

MBH136

(1) May be connected to prevent distortion (inductive load). (2) Required to increase the phase margin (capacitive load).

Fig.12 Alternative receiver arrangements.

book, full pagewidth

∆G

(dB)

−2

−4

−6

line

MBH137

(mA)

140120100806040200

R6 =

∞

78.7 kΩ48.7 kΩ

110 kΩ 140 kΩ

R9 = 20 Ω.

Fig.13 Variation of gain with line current, with R6 as a parameter.

1996 Apr 23 14

Page 15

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

Table 1 Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply

and exchange feeding bridge resistance R

exch

= 400 Ω R

exch

= 600 Ω R

exch

voltage V

(V)

24 61.9 48.7 X X 36 100 78.7 68 60.4 48 140 110 93.1 82 60 X X 120 102

handbook, full pagewidth

100 µF

10 µF

MIC+

MIC−

DTMF

MUTE

620 Ω

TEA1068

exch

R6 (kΩ)

QR−

QR+

GAR

GAS1

GAS2

SLPESTABAGCREG

; R9 = 20 Ω

exch

R4 100 kΩ

R7 68 kΩ

= 800 Ω R

line

100 µF

600 Ω

C4 100 pF

C7 1 nF

100 pF

= 1000 Ω

exch

10 to 140 mA

4.7 µF

Voltage gain is defined as; Gv= 20 log Vo/Vi. For measuring the gain from MIC+ and MIC−, the MUTE input should be LOW or open, for measuring the DTMF input, MUTE should be HIGH. Inputs not under test should be open.

3.6 kΩ

R9 20 Ω

MBH138

Fig.14 Test circuit for defining voltage gain of MIC+, MIC− and DTMF inputs.

1996 Apr 23 15

Page 16

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

ndbook, full pagewidth

100 µF

10 µF

MIC+

MIC−

DTMF

MUTE

4.7 µF

620 Ω

TEA1068

3.6 kΩ

TEA1068

line

100 µF

C4 100 pF

C7 1 nF

C6 100 pF

600 Ω

10 to 140 mA

MBH139

QR−

QR+

GAR

GAS1

GAS2

SLPESTABAGCREG

R9 20 Ω

10 µF

R4 100 kΩ

Voltage gain is defined as; Gv=20logVo/Vi.

Fig.15 Test circuit for defining voltage gain of the receiving amplifier.

1996 Apr 23 16

Page 17

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

APPLICATION INFORMATION

handbook, full pagewidth

R3 130 kΩ

3.92 kΩ

100 nF

100 pF

R11

1 nF

IR QR−

QR+

GAR

MIC+

MIC−

SLPE GAS1 GAS2

telephone

line

R10 13 Ω

BAS11

(2x)

BZW14

(2x)

620 Ω

LN V

TEA1068

REGR7AGCR6STAB

100 µF

DTMF

MUTE

TEA1068

from dial

and control circuits

4.7 µF

100 pF

390 Ω

bal

20 Ω

Typical application of the TEA1068, shown here with a piezoelectric earpiece and DTMF dialling. The bridge to the left and R10 limit the current into the circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement.

3.6 kΩ

MBH140

Fig.16 Application diagram.

1996 Apr 23 17

Page 18

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

andbook, full pagewidth

LN V

cradle

contact

telephone

line

TEA1068

BSN254A

DTMF TONE

MUTE

M1 DP/FLO

TEA1068

PCD3310

MBA279 - 1

The dashed lines show an optional flash (register recall by timed loop break).

Fig.17 DTMF set with a CMOS DTMF dialling circuit.

1996 Apr 23 18

Page 19

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

PACKAGE OUTLINES

DIP18: plastic dual in-line package; 18 leads (300 mil)

seating plane

TEA1068

SOT102-1

w M

(e )

pin 1 index

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

max.

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE VERSION

SOT102-1

min.

max.

IEC JEDEC EIAJ

1.40

1.14

0.055

0.044

0.53

0.38

0.021

0.015

0.32

1.40

0.23

1.14

0.013

0.055

0.009

0.044

REFERENCES

(1) (1)

cD E e M

21.8

21.4

0.86

0.84

6.48

6.20

0.26

0.24

(1)

3.9

8.25

3.4

7.80

0.15

0.32

0.13

0.31

EUROPEAN

PROJECTION

0.37

0.33

9.5

8.3

max.

0.2542.54 7.62

0.854.7 0.51 3.7

0.010.10 0.30

0.0330.19 0.020 0.15

ISSUE DATE

93-10-14 95-01-23

1996 Apr 23 19

Page 20

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

SO20: plastic small outline package; 20 leads; body width 7.5 mm

TEA1068

SOT163-1

v M

pin 1 index

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

max.

2.65

0.10

0.30

0.10

0.012

0.004

2.45

2.25

0.096

0.089

A3b

0.25

0.01

0.49

0.36

0.019

0.014

0.32

0.23

0.013

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

w M

scale

(1)E(1) (1)

13.0

12.6

0.51

0.30

0.49

0.29

eHELLpQ

7.6

1.27

7.4

0.050

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

detail X

1.1

1.0

0.043

0.039

(A )

0.25

0.01

0.25 0.1

0.01

0.004

ywv θ

0.9

0.4

0.035

0.016

OUTLINE

VERSION

SOT163-1

IEC JEDEC EIAJ

075E04 MS-013AC

REFERENCES

1996 Apr 23 20

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24 97-05-22

Page 21

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

SOLDERING Introduction

There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

DIP

SOLDERING BY DIPPING OR BY WA VE The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.

The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.

REFLOW SOLDERING Reflow soldering techniques are suitable for all SO

packages.

(order code 9398 652 90011).

). If the

stg max

TEA1068

Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.

Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

AVE SOLDERING

W Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.

• The longitudinal axis of the package footprint must be parallel to the solder flow.

• The package footprint must incorporate solder thieves at the downstream end.

During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

EPAIRING SOLDERED JOINTS

R Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.

1996 Apr 23 21

Page 22

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit

TEA1068

with dialler interface

DEFINITIONS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Apr 23 22

Page 23

Philips Semiconductors Product speciﬁcation

Versatile telephone transmission circuit with dialler interface

NOTES

TEA1068

1996 Apr 23 23

Page 24

Philips Semiconductors – a worldwide company

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Tel. (02) 805 4455, Fax. (02) 805 4466

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Ukraine: PHILIPS UKRAINE,

2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel.380-44-4760297, Fax. 380-44-4766991

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181) 730-5000, Fax. (0181) 754-8421

United States: 811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556

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Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors,

Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31-40-2724825

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

417021/10/ed/pp24 Date of release: 1996 Apr 23 Document order number: 9397 750 00804

Datasheet TEA1068T, TEA1068 Datasheet (Philips)

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

QUICK REFERENCE DATA

GENERAL DESCRIPTION

ORDERING INFORMATION

BLOCK DIAGRAM

PINNING

Mute input (MUTE)

Dual-Tone Multi Frequency input (DTMF)

Automatic Gain Control input AGC

Power-Down input (PD)

Side-tone suppression

LIMITING VALUES

THERMAL CHARACTERISTICS

CHARACTERISTICS

APPLICATION INFORMATION

PACKAGE OUTLINES

SOT102-1

SOT163-1

DEFINITIONS

LIFE SUPPORT APPLICATIONS