Datasheet TEA1067T, TEA1067 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1067

Low voltage versatile telephone
transmission circuit with dialler
interface

Product specification
File under Integrated Circuits, IC03A

June 1990

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

GENERAL DESCRIPTION

The TEA1067 is a bipolar integrated circuit performing all
speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between dialling and speech. The circuit is able to operate
down to a DC line voltage of 1.6 V (with reduced
performance) to facilitate the use of more telephone sets
in parallel.

Features

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable static resistance

• Provides supply with limited current for external circuitry

• Symmetrical high-impedance inputs (64 kΩ) for

dynamic, magnetic or piezoelectric microphones

QUICK REFERENCE DATA

• Asymmetrical high-impedance input (32 kΩ) for electret

• DTMF signal input with confidence tone

• Mute input for pulse or DTMF dialling

• Power down input for pulse dial or register recall

• Receiving amplifier for magnetic, dynamic or

• Large gain setting range on microphone and earpiece

• Line current dependent line loss compensation facility

• Gain control adaptable to exchange supply

• DC line voltage adjustment capability

TEA1067

microphone

piezoelectric earpieces

amplifiers

for microphone and earpiece amplifiers

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Line voltage I

= 15 mA V

line

Line current operating range normal operation

TEA1067 I
TEA1067T I
with reduced performance I

Internal supply current power down

input LOW I
input HIGH I

Supply voltage for peripherals I

= 15 mA; Ip= 1.4 mA;

line

mute input HIGH V

= 15 mA; Ip= 0.9 mA;

I

line

mute input HIGH V

Voltage gain range

microphone amplifier G
receiving amplifier G

Line loss compensation

gain control range ∆G
Exchange supply voltage range V
Exchange feeding bridge

resistance range R

line
line
line

CC
CC

LN

CC

CC

v
v

v

exch

exch

3.65 3.9 4.15 V

11 − 140 mA
11 − 140 mA
1 − 11 mA

− 1 1.35 mA

− 55 82 µA

2.2 2.4 − V

2.5 −− V

44 − 52 dB
20 − 45 dB

5.5 5.9 6.3 dB
36 − 60 V

0.4 − 1kΩ

PACKAGE OUTLINES

TEA1067: 18-lead DIL; plastic (SOT102). SOT102-1; 1998 Jun 18.
TEA1067T: 20-lead mini-pack; plastic (SO20; SOT163A). SOT163-1; 1998 Jun 18.

June 1990 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

MIC+
MIC−

DTMF

MUTE

PD

11 (12)

IR

8 (9)
7 (7)

13 (15)

14 (16)

12 (14)

V

CC

15 (17)

TEA1067
TEA1067T

+−+

(1)

dB

dB

SUPPLY AND
REFERENCE

+

−

−

+

−

CIRCUIT

AGC

−

+

−

+

−
+

LOW

VOLTAGE

CIRCUIT

(1)1

LN

(6) 6

(5) 5
(4) 4

(2) 2

(3) 3

TEA1067

GAR

QR+
QR−

GAS1

GAS2

V

EE

Figures in parenthesis refer to TEA1067T.

CURRENT

REFERENCE

16 (18)10 (11)

REG AGC STAB SLPE

17 (19) 9 (10) (20)18

Fig.1 Block diagram.

MGR082

June 1990 3

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PINNING

handbook, halfpage

Fig.2 Pinning diagram for TEA1067 18-lead DIL

LN
GAS1
GAS2

QR−
QR+

GAR
MIC−
MIC+

STAB

version.

1
2
3
4
5
6
7
8
9

TEA1067

MGR084

SLPE

18

AGC

17

REG

16

V

15

CC

MUTE

14

DTMF

13

PD

12

IR

11

V

10

EE

TEA1067

1 LN positive line terminal
2 GAS1 gain adjustment; transmitting amplifier
3 GAS2 gain adjustment; transmitting amplifier
4QR− inverting output; receiving amplifier
5QR+ non-inverting output receiving amplifier
6 GAR gain adjustment; receiving amplifier
7 MIC− inverting microphone input
8 MIC+ non-inverting microphone input
9 STAB current stabilizer

10 V

EE

11 IR receiving amplifier input
12 PD power-down input
13 DTMF dual-tone multi-frequency input
14 MUTE mute input
15 V

CC

16 REG voltage regulator decoupling
17 AGC automatic gain control input
18 SLPE slope (DC resistance) adjustment

negative line terminal

positive supply decoupling

handbook, halfpage

LN

1

GAS1

2

GAS2

3

QR−

4

QR+

5

GAR
MIC−

n.c. n.c.

MIC+

STAB

TEA1067T

6
7
8
9

10

20
19
18
17
16
15
14
13
12
11

MGR083

SLPE
AGC
REG

V

CC

MUTE
DTMF
PD

IR
V

EE

Fig.3 Pinning diagram for TEA1067T 20-lead

mini-pack version.

1 LN positive line terminal
2 GAS1 gain adjustment; transmitting amplifier
3 GAS2 gain adjustment; transmitting amplifier
4QR− inverting output; receiving amplifier
5QR+ non-inverting output receiving amplifier
6 GAR gain adjustment, receiving amplifier
7 MIC− inverting microphone input
8 n.c. not connected

9 MIC+ non-inverting microphone input
10 STAB current stabilizer
11 V

EE

negative line terminal
12 IR receiving amplifier input
13 n.c. not connected
14 PD power-down input
15 DTMF dual-tone multi-frequency input
16 MUTE mute input
17 V

CC

positive supply decoupling
18 REG voltage regulator decoupling
19 AGC automatic gain control input
20 SLPE slope (DC resistance) adjustment

June 1990 4

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

FUNCTIONAL DESCRIPTION
Supply: V

Power for the TEA1067 and its peripheral circuits is usually
obtained from the telephone line. The IC develops its own
supply at V
voltage VCCmay also be used to supply external circuits
e.g. dialling and control circuits.

Decoupling of the supply voltage is performed by a
capacitor between VCCand VEEwhile the internal voltage
regulator is decoupled by a capacitor between REG and
VEE.

The DC current drawn by the device will vary in
accordance with varying values of the exchange voltage
(V

exch

resistance of the telephone line (R
The TEA1067 has an internal current stabilizer working at

a level determined by a 3.6 kΩ resistor connected
between STAB and VEE(see Fig.7). When the line current
(I

) is more than 0.5 mA greater than the sum of the IC

line

supply current (ICC) and the current drawn by the
peripheral circuitry connected to VCC(Ip) the excess
current is shunted to VEEvia LN.
The regulated voltage on the line terminal (VLN) can be
calculated as:

VLN=V
VLN= V

Where V
compensated reference voltage of 3.6 V and R9 is an
external resistor connected between SLPE and VEE.

, LN, SLPE, REG and STAB

CC

and regulates its voltage drop. The supply

CC

), the feeding bridge resistance (R

).

line

ref
ref

+ I
+ [(I

ref

× R9; or

SLPE

− ICC− 0.5 × 10−3A) − Ip] × R9

line

is an internally generated temperature

), and the DC

exch

TEA1067

In normal use the value of R9 would be 20Ω. Changing the
value of R9 will also affect microphone gain, DTMF gain,
gain control characteristics, side-tone level and maximum
output swing on LN, and the DC characteristics (especially
at the lower voltages).

Under normal conditions, when I
the static behaviour of the circuit is that of a 3.6 V regulator
diode with an internal resistance equal to that of R9. In the
audio frequency range the dynamic impedance is largely
determined by R1. Fig.4 shows the equivalent impedance
of the circuit.

At line currents below 9 mA the internal reference voltage
is automatically adjusted to a lower value (typically 1.6 V
at 1 mA). This means that the operation of more sets in
parallel is possible with DC line voltages (excluding the
polarity guard) down to an absolute minimum voltage of

1.6 V. With line currents below 9 mA the circuit has limited
sending and receiving levels. The internal reference
voltage can be adjusted by means of an external resistor
(RVA). This resistor connected between LN and REG will
decrease the internal reference voltage, connected
between REG and SLPE it will increase the internal
reference voltage.

Current (Ip) available from VCCfor peripheral circuits
depends on the external components used. Fig.10 shows
this current for VCC> 2.2 V. If MUTE is LOW when the
receiving amplifier is driven the available current is further
reduced. Current availability can be increased by
connecting the supply IC (TEA1081) in parallel with R1, as
shown in Fig.17 (c), or by increasing the DC line voltage by
means of an external resistor (RVA) connected between
REG and SLPE.

>> ICC+ 0.5 mA + Ip,

SLPE

June 1990 5

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, halfpage

Rp= 16.2 kΩ
L

eq

Microphone inputs (MIC+ and MIC−) and gain
adjustment pins (GAS1 and GAS2)

The TEA1067 has symmetrical microphone inputs. Its
input impedance is 64 kΩ (2 × 32 kΩ) and its voltage gain
is typically 52 dB (when R7 = 68 kΩ, see Fig.14). Dynamic,
magnetic, piezoelectric or electret (with built-in FET source
followers) microphones can be used. Microphone
arrangements are shown in Fig.11.

The gain of the microphone amplifier can be adjusted
between 44 dB and 52 dB to suit the sensitivity of the
transducer in use. The gain is proportional to the value of
R7 which is connected between GAS1 and GAS2. Stability
is ensured by the external capacitor C6 which is connected
between GAS1 and SLPE. The value of C6 is 100 pF but
this may be increased to obtain a first-order low-pass filter.
The cut-off frequency corresponds to the time constant
R7 × C6.

Mute input (MUTE)

When MUTE is HIGH the DTMF input is enabled and the
microphone and receiving amplifier inputs are inhibited.
The reverse is true when MUTE is LOW or open-circuit.
MUTE switching causes only negligible clicking on the
earpiece outputs and line. If the number of parallel sets in
use causes a drop in line current to below 6 mA the speech
amplifiers remain active independent to the DC level
applied to the MUTE input.

LN

V

EE

= C3 × R9 × R

L

eq

V

ref

R9
20 Ω

p

R

p

REG

C3

4.7 µF

MBA454

Fig.4 Equivalent impedance circuit.

R1

V

CC

C1
100 µF

TEA1067

Dual-tone multi-frequency input (DTMF)

When the DTMF input is enabled dialling tones may be
sent onto the line. The voltage gain from DTMF to LN is
typically 25.5 dB (when R7 = 68 kΩ) and varies with R7 in
the same way as the microphone gain. The signalling
tones can be heard in the earpiece at a low level
(confidence tone).

Receiving Amplifier (IR, QR+, QR− and GAR)

The receiving amplifier has one input (IR), one
non-inverting complementary output (QR+) and an
inverting complementary output (QR−). These outputs
may be used for single-ended or differential drive
depending on the sensitivity and type of earpiece used
(see Fig.12). IR to QR + gain is typically 31 dB (when
R4 = 100 kΩ), this is sufficient for low-impedance
magnetic or dynamic microphones which are suited for
single-ended drive. Using both outputs for differential drive
gives an additional gain of 6 dB. This feature can be used
when the earpiece impedance exceeds 450 Ω
(high-impedance dynamic or piezoelectric types).

The receiving amplifier gain can be adjusted between 20
and 39 dB with single-ended drive and between 26 and
45 dB with differential drive, to match the sensitivity of the
transducer in use. The gain is set with the value of R4
which is connected between GAR and QR+. Overall
receive gain between LN and QR+ is calculated by
substracting the anti-sidetone network attenuation (32 dB)
from the amplifier gain. Two external capacitors C4 and
C7, ensure stability. C4 is normally 100 pF and C7 is
10 × the value of C4. The value of C4 may be increased to
obtain a first-order low-pass filter. The cut-off frequency
will depend on the time constant R4 × C4.
The output voltage of the receiving amplifier is specified for
continuous-wave drive. The maximum output voltage will
be higher under speech conditions where the peak to RMS
ratio is higher.

June 1990 6

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

Automatic gain control input (AGC)

Automatic line loss compensation is achieved by
connecting a resistor (R6) between AGC and VEE. The
automatic gain control varies the gain of the microphone
amplifier and the receiving amplifier in accordance with the
DC line current. The control range is 5.9 dB. This
corresponds to a line length of 5 km for a 0.5 mm diameter
copper twisted-pair cable with a DC resistance of
176 Ω/km and an average attenuation 1.2 dB/km. Resistor
R6 should be chosen in accordance with the exchange
supply voltage and its feeding bridge resistance (see
Fig.13 and Table 1). The ratio of start and stop currents of
the AGC curve is independent of the value of R6. If no
automatic line loss compensation is required the AGC may
be left open-circuit. The amplifiers, in this condition, will
give their maximum specified gain.

Power-down input (PD)

During pulse dialling or register recall (timed loop break)
the telephone line is interrupted. During these interruptions
the telephone line provides no power for the transmission
circuit or circuits supplied by V
will bridge these gaps. This bridging is made easier by a
HIGH level on the PD input which reduces the typical
supply current from 1 mA to 55 µA and switches off the
voltage regulator preventing discharge through LN. When
PD is HIGH the capacitor at REG is disconnected with the
effect that the voltage stabilizer will have no switch-on
delay after line interruptions. This minimizes the
contribution of the IC to the current waveform during pulse
dialling or register recall. When this facility is not required
PD may be left open-circuit.

. The charge held on C1

CC

TEA1067

Side-tone suppression

The anti-sidetone network, R1//Z
(see Fig.5) suppresses transmitted signal in the earpiece.
Compensation is maximum when the following conditions
are fulfilled:

(a) R9 × R2 = R1 (R3 + [R8//Z
(b) (Z

bal

/ [Z

+ R8]) = (Z

bal

line

/ [Z

If fixed values are chosen for R1, R2, R3, and R9 then
condition (a) will always be fulfilled whenR8//Z
To obtain optimum side-tone suppression condition (b)
has to be fulfilled resulting in:

Z

= (R8/R1) Z

bal

line

= k.Z

where k is a scale factor;

line

k = (R8/R1)
The scale factor (k), dependent on the value of R8, is

chosen to meet the following criteria:
(a) Compatibility with a standard capacitor from the E6 or

E12 range for Z
(b)  Z

//R8 << R3 to fulfil condition (a) and thus

bal

bal

ensuring correct anti-sidetone bridge operation
(c)  Z

+ R8 >> R9 to avoid influencing the transmitter

bal

gain
In practice Z

varies considerably with the line type and

line

length. The value chosen for Z
an average line length thus giving optimum setting for
short or long lines.

, R2, R3, R9 and Z

line

]);

bal

+ R1])

line

bal

should therefore be for

bal

bal

 << R3.

,

June 1990 7

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

Example

The line balance impedance (Z
suppression is present can be calculated by:
suppose Z

= 210 Ω+ (1265 Ω//140 nF), representing a

line

5 km line of 0.5 mm diameter, copper, twisted-pair cable
matched to 600 Ω (176 Ω/km; 38 nF/km).
When k = 0.64 then R8 = 390 Ω;
Z

= 130 Ω+ (820 Ω//220 nF).

bal

handbook, full pagewidth

) at which the optimum

bal

Z

line

V

R1

EE

R9

LN

SLPE

TEA1067

The anti-sidetone network for the TEA1060 family shown
in Fig.5 attenuates the signal received from the line by 32
dB before it enters the receiving amplifier. The attenuation
is almost constant over the whole audio frequency range.
Fig.6 shows a conventional Wheatstone bridge
anti-sidetone circuit that can be used as an alternative.
Both bridge types can be used with either resistive or
complex set impedances.

R2

i

m

R3

R8

IR

R

t

Z

bal

MSA500

Fig.5 Equivalent circuit of TEA1060 anti-sidetone bridge.

handbook, full pagewidth

Z

line

V

R1

EE

R9

LN

SLPE

Z

bal

i

m

R8

R

A

Fig.6 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

More information can be found in the designer guide; 9398 341 10011

IR

R

t

MSA501

June 1990 8

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT

Positive continuous line voltage V
Repetitive line voltage during

switch-on line interruption V

Repetitive peak line voltage for a

1 ms pulse per 5 s R9 = 20 Ω;

R10 = 13 Ω

(Fig.16) V
Line current TEA1067 (note 1) R9 = 20 Ω I
Line current TEA1067T (note 1) R9 = 20 Ω I
Voltage on all other pins V

Total power dissipation (note 2) R9 = 20 Ω

TEA1067 P

TEA1067T P
Storage temperature range T
Operating ambient temperature range T
Junction temperature T

line
line

−V

LN

LN

LN

i

i

tot

tot
stg
amb
j

TEA1067

− 12 V

− 13.2 V

− 28 V

− 140 mA

− 140 mA

− VCC+ 0.7 V

− 0.7 V

− 769 mW

− 550 mW

−40 + 125 °C

−25 + 75 °C

−+ 125 °C

Notes

1. Mostly dependent on the maximum required T

and on the voltage between LN and SLPE.

amb

See Figs 7 and 8 to determine the current as a function of the required voltage and the
temperature.

2. Calculated for the maximum ambient temperature specified T

= 75 °C and a maximum

amb

junction temperature of 125 °C.

THERMAL RESISTANCE

From junction to ambient in free air

TEA1067 R
TEA1067T mounted on glass epoxy board 41 × 19 × 1.5 mm R

th j-a
th j-a

typ. 65 K/W
typ. 90 K/W

June 1990 9

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

(1)

(2)

SLPE

MBH133

(3)

(4)

(V)

160

handbook, halfpage

I

LN

(mA)

140

120

100

80

60

40

212

46810

VLN-V

TEA1067

T

amb

(1) 45 °C 1231 mW
(2) 55 °C 1077 mW
(3) 65 °C 923 mW
(4) 75 °C 769 mW

P

tot

150

handbook, halfpage

I

LN

(mA)

130

110

90

70

50

30

212

Fig.7 TEA1067 safe operating area.

MSA546

(1)

(2)

(3)

(4)

46810

VLN-V

SLPE

(V)

T

amb

P

tot

(1) 45 °C 888 mW
(2) 55 °C 777 mW
(3) 65 °C 666 mW
(4) 75 °C 555 mW

Fig.8 TEA1067T safe operating area.

June 1990 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

CHARACTERISTICS

= 11 to 140 mA; VEE= 0 V; f = 800 Hz; T

I

line

PARAMETER CONDITION SYMBOL MIN. TYP. MAX. UNIT

Supply; LN and V

CC

Voltage drop over circuit,

between LN and V

EE

Variation with temperature I

microphone inputs open
I

= 1 mA V

line

= 4 mA V

I

line

I

= 7 mA V

line

I

= 11 mA V

line

= 15 mA V

I

line

I

= 100 mA V

line

I

= 140 mA V

line

= 15 mA ∆VLN/∆T −3 −1 1 mV/K

line

Voltage drop over circuit,

between LN and V
external resistor R

EE
VA

with

I

= 15 mA;

line

R

(LN to REG)

VA

= 68 kΩ 3.1 3.4 3.7 V
I

= 15 mA;

line

R

(REG to SLPE)

VA

= 39 kΩ 4.2 4.5 4.8 V

Supply current PD = LOW;

V

= 2.8 V I

CC

Supply current PD = HIGH;

V

= 2.8 V I

CC

Supply voltage available for

peripheral circuitry I

= 15 mA;

line

MUTE = HIGH
I

= 1.4 mA V

p

I

= 0 mA V

p

Microphone inputs
MIC+ and MIC−

Input impedance (differential)

between MIC− and MIC+ Z

Input impedance (single-ended)

MIC− or MIC+ to V

EE

Common mode rejection ratio k
Voltage gain

MIC+/MIC− to LN I

= 15 mA;

line

R7 = 68 kΩ G

=25°C; unless otherwise specified

amb

TEA1067

LN
LN
LN
LN
LN
LN
LN

CC

CC

CC
CC

 51 64 77 kΩ

i

 Zi 25.5 32 38.5 kΩ

CMR

v

− 1.6 − V

1.75 2.0 2.25 V

2.25 2.8 3.35 V

3.55 3.8 4.05 V

3.65 3.9 4.15 V

4.9 5.6 6.5 V

−−7.5 V

− 1.0 1.35 mA

− 55 82 µA

2.2 2.4 − V

2.95 3.2 − V

− 82 − dB

51 52 53 dB

June 1990 11

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1067

transmission circuit with dialler interface

PARAMETER CONDITION SYMBOL MIN. TYP. MAX. UNIT

Gain variation with frequency

at f = 300 Hz
and f = 3400 Hz w.r.t 800 Hz ∆G

vf

Gain variation with temperature

at −25 °C
and + 75 °C w.r.t. 25 °C

without R6;
I

= 50 mA ∆G

line

vT

Dual-tone multi-frequency
input DTMF

Input impedance  Z
Voltage gain from DTMF to LN I

= 15 mA;

line

R7 = 68 kΩ G

 16.8 20.7 24.6 kΩ

i

v

Gain variation with frequency

at f = 300 Hz and f = 3400 Hz w.r.t. 800 Hz ∆G

vf

Gain variation with temperature

at −25 °C and +75 °C w.r.t. 25 °C

I

= 50 mA ∆G

line

vT

Gain adjustment
GAS1 and GAS2

Gain variation of the

transmitting amplifier by
varying R7 between GAS1
and GAS2 ∆G

v

Sending amplifier output LN

Output voltage I

Noise output voltage I

= 15 mA

line

THD = 2% V
THD = 10% V
I

= 4 mA;

line

THD = 10% V
I

= 7 mA;

line

THD = 10% V

= 15 mA;

line

LN(rms)
LN(rms)

LN(rms)

LN(rms)

R7 = 68 kΩ;
200 Ω between
MIC− and MIC+;
psophometrically
weighted (P53 curve) V

no(rms)

Receiving amplifier input IR

Input impedance  Zi 17 21 25 kΩ

−0.5 ± 0.2 +0.5 dB

−±0.2 − dB

24.5 25.5 26.5 dB

−0.5 ±0.2 +0.5 dB

−±0.2 − dB

−8 − 0dB

− 1.9 − V

1.9 2.2 − V

− 0.8 − V

− 1.4 − V

−−72 − dBmp

June 1990 12

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PARAMETER CONDITION SYMBOL MIN. TYP. MAX. UNIT

Receiving amplifier outputs
QR+ and QR−

Output impedance

(single-ended)  Z

Voltage gain from IR to

QR+ or QR− I

single-ended RL(from QR+ or

differential R

Gain variation with frequency

at f = 300 Hz
and f = 3400 Hz w.r.t. 800 Hz ∆G

Gain variation with temperature

at −25 °C and +75 °C w.r.t. 25 °C

Output voltage sinewave drive

single-ended RL = 150 Ω V

differential f = 3400 Hz;

Output voltage THD = 10%;

Noise output voltage I

single-ended RL = 300 Ω V
differential RL = 600 Ω V

= 15 mA

line

R4 = 100 kΩ

QR−) = 300 Ω G

(from QR+ or

L

QR−) = 600 Ω G

without R6;
I

= 50 mA ∆G

line

I

= 15 mA;

line

= 0 mA; THD = 2%

I

p

R4 = 100 kΩ

RL = 450 Ω V

series R = 100 Ω;
C

= 47 nF V

L

RL = 150 Ω
R4 = 100 kΩ
I

= 4 mA V

line

I

= 7 mA V

line

= 15 mA;

line

R4 = 100 kΩ;
IR open-circuit
psophometrically
weighted; (P53 curve)

TEA1067

−4−Ω

o

v

v

vf

vT

o(rms)
o(rms)

o(rms)

o(rms)
o(rms)

no(rms)
no(rms)

30 31 32 dB

36 37 38 dB

−0.5 −0.2 0 dB

−±0.2 − dB

0.25 0.29 − V

0.45 0.55 − V

0.65 0.80 − V

− 15 − mV

− 130 − mV

− 50 −µV

− 100 −µV

June 1990 13

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PARAMETER CONDITION SYMBOL MIN. TYP. MAX. UNIT

Gain adjustment GAR

Gain variation of receiving

amplifier achievable by
varying R4 between
GAR and QR ∆G

Mute input

Input voltage HIGH V
Input voltage LOW V
Input current I
Gain reduction

MIC+ or MIC− to LN MUTE = HIGH ∆G

Voltage gain from DTMF

to QR+ or QR− MUTE = HIGH;

R4 = 100 kΩ;
single-ended;
R

= 300 Ω G

L

Power-down input PD

Input voltage HIGH V
Input voltage LOW V
Input current I

Automatic gain control
input AGC

Controlling the gain
from IR to QR+/QR− and
the gain from MIC+/MIC−
to LN; R6 between AGC
and V

EE

Gain control range I
Highest line current for

maximum gain I

Minimum line current for

minimum gain I

Reduction of gain between

I

= 15 mA and

line

I

= 35 mA ∆G

line

R6 = 110 kΩ

= 70 mA ∆G

line

v

IH
IL

MUTE

v

v

IH
IL

PD

v

line

line

v

TEA1067

−11 −+8dB

1.5 − V

CC

−−0.3 V

− 815µA

− 70 − dB

−21 −19 −17 dB

1.5 − V

CC

−−0.3 V

− 510µA

−5.5 −5.9 −6.3 dB

− 23 − mA

− 61 − mA

−1.0 −1.5 −2.0 dB

V

V

June 1990 14

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

V

R

exch

exch

R

line

TEA1067

I

line

I

+ 0.5 mA

SLPE

DC
AC

REG

STAB SLPE

C3 R5

I

SLPE

Fig.9 Supply arrangement.

R1

LN V

R9

I

CC

CC

0.5 mA

V

EE

C1

peripheral

circuits

MBH123

TEA1067

I

p

handbook, halfpage

2

a

I

P

(mA)

Curve (a) is valid when the receiving amplifier is not driven or when MUTE = HIGH,
curve (b) is valid when MUTE = LOW and the receiving amplifier is driven;

= 150 mV, RL= 150 Ω asymmetrical. The supply possibilities can be increased

V

o(rms)

simply by setting the voltage drop over the circuit V
resistor R

connected between REG and SLPE.

VA

b

1

0

012 4

to a higher value by means of

LN

Fig.10 Typical current Ipavailable from VCCfor peripheral circuitry with VCC≥ 2.2 V.

MGR085

3

VCC (V)

(a) Ip= 1.8 mA
(b) Ip= 1.35 mA
I

= 15 mA at VLN= 3.9 V

line

R1 = 620 Ω and R9 = 20 Ω.

June 1990 15

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

MIC+

(1)

MIC−

(a) (b)

(a) Magnetic or dynamic microphone. The resistor marked (1) may be connected to decrease
the terminating impedance.

(b) Electret microphone.
(c) Piezoelectric microphone.

MIC−

MIC+

TEA1067

V

CC

V

EE

MIC+

MIC−

MGR086

(c)

Fig.11 Alternative microphone arrangements.

handbook, full pagewidth

QR+

QR−

V

EE

(a) (b) (c) (d)

(a) Dynamic earpiece with less than 450 Ω impedance.
(b) Dynamic earpiece with more than 450 Ω impedance.
(c) Magnetic earpiece with more than 450 Ω impedance. The resistor marked (1) may be connected

to prevent distortion (inductive load).
(d) Piezoelectric earpiece. The resistor marked (2) is required to increase the phase margin

(capacitive load).

QR+

QR−

QR+

QR−

(1) (2)

QR+

QR−

MGR087

Fig.12 Alternative receiver arrangements.

June 1990 16

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

0

∆G

v

(dB)

−2

−4

−6

78.7 kΩ

110 kΩ 140 kΩ

R6 =

∞

R9 = 20 Ω

I

line

TEA1067

MSA507

140120100806040200

(mA)

Fig.13 Variation of gain with line current, with R6 as a parameter.

Table 1 Values of resistor R6 for optimum line loss

compensation, for various usual values of
exchange supply voltage (V

feeding bridge resistance (R

) and exchange

exch

); R9 = 20 Ω.

exch

(Ω)

R

exch

400 600 800 1000

R6 (kΩ)

V

exch

36 100 78.7 X X

(V) 48 140 110 93.1 82

60 X X 120 102

June 1990 17

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

V

IR

MIC+

V

i

MIC−

100 µF

C1

10 µF

V

i

Voltage gain is defined as: Gv= 20 log  Vo/Vi. For measuring the gain from
MIC+ and MIC− the MUTE input should be LOW or open, for measuring the
DTMF input MUTE should be HIGH. Inputs not under test should be open.

DTMF

MUTE

PD

CC

V

REG AGC STAB

EE

620 Ω

TEA1067

C3

4.7
µF

R1

R6

R5

3.6
kΩ

LN

GAS1

GAS2

SLPE

QR−

QR+

GAR

R9
20 Ω

R4

100

kΩ

R7
68
kΩ

100 µF

R

600 Ω

C4
100 pF

C7 1 nF

C6
100 pF

TEA1067

I

line

V

o

L

1 to

140 mA

MGR088

Fig.14 Test circuit for defining voltage gain of MIC+, MIC− and DTMF inputs.

handbook, full pagewidth

10 µF

V

i

100 µF

C1

Voltage gain is defined as: Gv= 20 log  Vo/Vi.

IR

MIC+

MIC−

DTMF

MUTE

PD

V

V

CC

TEA1067

REG AGC STAB

EE

C3

4.7
µF

R1

620 Ω

R6

R5

3.6
kΩ

LN

GAS1

GAS2

SLPE

QR−

QR+

GAR

R9
20 Ω

10 µF

R4

100

kΩ

R7

Z

L

V

o

C4
100 pF

C7 1 nF

C6
100 pF

I

line

100 µF

600 Ω

MGR089

1 to

140 mA

Fig.15 Test circuit for defining voltage gain of the receiving amplifier.

June 1990 18

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

APPLICATION INFORMATION

handbook, full pagewidth

R2
130 kΩ

R3

3.92
kΩ

Z

bal

R4

C5

100 nF

C7

R11

1 nF

R8

390 Ω

C4

100

pF

IR

QR−

QR+

GAR

R9

20 Ω

MIC+

MIC−

SLPE

telephone

line

BAS11

(2×)

BZW14

(2×)

R10
13 Ω

BZX79-

C12

R1

620 Ω

LN V

TEA1067

R

VA

GAS1

GAS2 REG AGC STAB

R7

C6

100 pF

C3

4.7
µF

R6

CC

R5

3.6
kΩ

DTMF

MUTE

PD

V

EE

TEA1067

C1
100

µF

+

from dial

and

control circuits

−

MGR090

The bridge to the left, the zener diode and R10 limit the current into the circuit
and the voltage across the circuit during line transients. Pulse dialling or
register recall require a different protection arrangement.
The DC line voltage can be set to a higher value by the resistor R
SLPE).

VA

(REG to

Fig.16 Typical application of the TEA1067, shown here with a piezoelectric earpiece and DTMF dialling.

June 1990 19

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

LN V

cradle

telephone

line

telephone

line

contact

cradle

contact

BST76

BST76

TEA1067

V

EE

LN V

TEA1067

V

EE

(a)

CC

DTMF
MUTE

PD

CC

DTMF
MUTE

PD

V

DTMF
M
FL

V

SS

V

M
DP

V

SS

TEA1067

DD

PCD3310

DD

PCD3320

FAMILY

(b)

TEA1081

LN V

CC

DTMF
MUTE

PD

V

EE

I2C-bus

telephone

line

cradle

contact

TEA1067

BST76

(c)

(a) DTMF-Pulse set with CMOS dialling circuit PCD3310.
The dashed lines show an optional flash (register recall by timed loop break).

(b) Pulse dial set with one of the PCD3320 family of CMOS interrupted current-loop dialling circuits.
(c) Dual-standard (pulse and DTMF) feature phone with the PCD3343 CMOS controller and the

PCD3312 CMOS DTMF generator with I

2

C-bus. Supply is provided by the TEA1081 supply circuit.

V

M
DP/FL

V

SS

DD

PCD3343

DTMF

PCD3312

MGR091

Fig.17 Typical applications of the TEA1067 (simplified).

June 1990 20

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PACKAGE OUTLINES

DIP18: plastic dual in-line package; 18 leads (300 mil)

D

seating plane

L

Z

18

e

b

TEA1067

SOT102-1

M

E

A

2

A

A

1

w M

b

1

b

2

10

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

max.

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT102-1

12

min.

max.

IEC JEDEC EIAJ

b

1.40

1.14

0.055

0.044

b

1

0.53

0.38

0.021

0.015

b

2

0.32

1.40

0.23

1.14

0.013

0.055

0.009

0.044

REFERENCES

(1) (1)

cD E e M

21.8

21.4

0.86

0.84

9

6.48

6.20

0.26

0.24

E

(1)

Z

L

e

1

M

3.9

8.25

3.4

7.80

0.15

0.32

0.13

0.31

EUROPEAN

PROJECTION

E

0.37

0.33

H

9.5

8.3

w

max.

0.2542.54 7.62

0.854.7 0.51 3.7

0.010.10 0.30

0.0330.19 0.020 0.15

ISSUE DATE

93-10-14
95-01-23

June 1990 21

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SO20: plastic small outline package; 20 leads; body width 7.5 mm

D

c

y

Z

20

11

TEA1067

SOT163-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

0.30

0.10

0.012

0.004

1

A2A

2.45

2.25

0.096

0.089

0.25

0.01

b

0.49

0.36

p

cD

0.32

0.23

0.013

0.009

3

0.019

0.014

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

10

w M

b

p

scale

(1)E(1) (1)

13.0

12.6

0.51

0.49

eHELLpQ

7.6

1.27

7.4

0.30

0.050

0.29

10.65

10.00

0.419

0.394

Q

A

2

0.055

A

1.4

1

detail X

1.1

1.1

1.0

0.4

0.043

0.043

0.039

0.016

(A )

L

p

L

0.25

0.01

A

3

θ

0.25 0.1

0.01

0.004

ywv θ

Z

0.9

0.4

0.035

0.016

o

8

o

0

OUTLINE
VERSION

SOT163-1

IEC JEDEC EIAJ

075E04 MS-013AC

REFERENCES

June 1990 22

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24
97-05-22

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“Data Handbook IC26; Integrated Circuit Packages”

our
(order code 9398 652 90011).

DIP

S

OLDERING BY DIPPING OR BY WAVE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

stg max

). If the

TEA1067

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

EPAIRING SOLDERED JOINTS

R
Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

June 1990 23

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1067

transmission circuit with dialler interface

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

June 1990 24

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

NOTES

TEA1067

June 1990 25

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

NOTES

TEA1067

June 1990 26

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

NOTES

TEA1067

June 1990 27

Philips Semiconductors – a worldwide company

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Tel. [phone], Fax. [phone]
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220050 MINSK, Tel. [phone], Fax. [phone]

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Middle East: see Italy
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Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

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252042 KIEV, Tel. [phone], Fax. [phone]

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United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 415102/00/02/pp28 Date of release: June 1990 Document order number: 9397 750 nnnnn