The TEA0676T is a monolithic bipolar integrated circuit
intended for applications in car radios. It includes head and
equalization amplifiers with electronically switchable time
constants. Furthermore it includes electronically
switchable inputs for tape drivers with reverse heads.
The device will operate with power supplies in a range of
7.6 to 12.0 V. The output overload level increases with the
increase in supply voltage, so it is advisable to use a
regulated power supply or a supply with a long time
constant.
ORDERING INFORMATION
TYPE
NUMBER
TEA0676TSO16plastic small outline package; 16 leads; body width 7.5 mmSOT162-1
NAMEDESCRIPTIONVERSION
PACKAGE
1997 Oct 072
Page 3
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
BLOCK DIAGRAM
handbook, full pagewidth
equalizer
switch
70 µs
10 µF
OUTB
16
120 µs
18 kΩ
EQSW
15
330 kΩ
10 nF
EQOUTB
14
8.2 kΩ
180 Ω
1 kΩ
EQINB
13
GND
12
10 µF
INB1
11
470
pF
head
switch
IN1
IN2
27 kΩ
HSWINB2
10
10
µF
TEA0676T
470
pF
9
TEA0676T
1
OUT A
10 µF
2
n.c.
LOGIC
3
EQOUT A
10 nF
330 kΩ
EQ
AMPLIFIER
EQ
AMPLIFIER
8.2 kΩ
4
EQINA
1 kΩ
180 Ω
5
V
CC
10 V
10 µF
INA1
PREAMPLIFIER
POWER
SUPPLY
PREAMPLIFIER
470
pF
µF
8
INA2
470
pF
MGE862
76
V
ref
100
Fig.1 Block and application diagram.
1997 Oct 073
Page 4
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
PINNING
SYMBOLPINDESCRIPTION
OUTA1output channel A
n.c.2not connected
EQOUTA3output equalizer channel A
EQINA4input equalizer channel A
V
CC
INA16input channel A1
V
ref
INA28input channel A2
INB29input channel B2
HSW10input head switch
INB111input channel B1
GND12ground
EQINB13input equalizer channel B
EQOUTB14output equalizer channel B
EQSW15input equalizer switch
OUTB16output channel B
5supply voltage
(forward or reverse)
7reference voltage
(reverse or forward)
(reverse or forward)
(forward or reverse)
handbook, halfpage
EQOUTA
OUTA
1
n.c.
2
3
V
CC
INA1
V
ref
INA2
4
TEA0676T
5
6
7
8
MGE861
EQINA
Fig.2 Pin configuration.
TEA0676T
16
OUTB
15
EQSW
14
EQOUTB
13
EQINB
12
GND
11
INB1
10
HSW
9
INB2
FUNCTIONAL DESCRIPTION
Gain of pre-amplifier = 30 dB; minimum gain of
EQ-amplifier = 24.5 dB at f = 1 kHz with 70 µs cut-off
frequency.
Head switching is achieved when pin 10 (HSW) is
connected to ground via a 27 kΩ resistor (inputs INA2,
INB2 are active) or connected to HIGH level (0.8V
CC
)
(inputs INA1, INB1 are active).
Equalization time constant switching (70 µs/120 µs) is
achieved when pin 15 (EQSW) is connected to ground via
an 18 kΩ resistor (120 µs) or left open-circuit (70 µs).
1997 Oct 074
Page 5
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
TEA0676T
reverse tape decks
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CC
∆V
(12-x)
T
stg
T
amb
V
es
Notes
1. Human body model: C = 100 pF; R = 1.5 kΩ.
2. Machine model: C = 200 pF; R = 0 Ω.
THERMAL CHARACTERISTICS
SYMBOLPARAMETER VALUE UNIT
R
th j-a
supply voltage014V
voltage at pins 1 to 11, 13 to 16 with respect to pin 120V
CC
V
storage temperature−55+150°C
operating ambient temperature−40+85°C
electrostatic handling voltagenote 1−2000+2000V
note 2−500+500V
thermal resistance from junction to ambient in free air70K/W
1997 Oct 075
Page 6
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
TEA0676T
reverse tape decks
CHARACTERISTICS
V
= 10 V; RL=10kΩ; CL= 2.5 nF; T
CC
387.5 mV with 0 dB as standard; EQ switch in 70 µs position; unless otherwise specified; see notes 1 and 2.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Supply
V
CC
I
CC
supply voltage (pin 5)7.610.012.0V
supply current−1013mA
DC current capabilityoutput to ground−2−−mA
DC current capabilityoutput to V
EMCDC offset voltage at
pins 1 and 16
=25°C; Vo= 0 dB means 387.5 mV at output; all levels are referenced to
amb
=0dB−0.080.15%
o
f = 10 kHz; V
=6dB−0.150.3%
o
12−−dB
f=1kHz
V
< 0.25 V; f = 1 kHz−50−dB
R(rms)
5763−dB
f = 1 kHz; Vo=10dB
−0.5−+0.5dB
f = 1 kHz; Vo=0dB
selective measurement;
7077−dB
f = 1 kHz; Vo=10dB
unweighted;
f = 20 Hz to 20 kHz; R
=0Ω;
s
6773−dB
internal gain 40 dB; linear;
see Fig.13
unweighted;
−0.8−µV
f = 20 Hz to 20 kHz; Rs=0Ω
from pin INA1 or INA2 to
293031dB
pin EQINA and from pin INB1
or INB2 to pin EQINB
pin INB1 to pin OUTB
f = 10 kHz8086−dB
f = 400 Hz104110−dB
60100−kΩ
−80100Ω
−2−mV
INB2 connected to V
CC
f = 900 MHz; V
ref
= 6 V (RMS);
i
300−−µA
−50−mV
see Figs 12, 14 and 15
1997 Oct 076
Page 7
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
TEA0676T
reverse tape decks
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Switching thresholds
E
QUALIZATION TIME CONSTANT SWITCHING
V
EQSW
I
EQSW
V
EQSW(HIGH)
V
EQSW(LOW)
HEAD SWITCHING
V
HSW
I
HSW
V
HSW(HIGH)
V
HSW(LOW)
Notes
1. For an application with a fixed equalization time constant of 120 µs the equalizing network may be applied completely
external. In this application the 8.2 kΩ resistor has to be changed to 14 kΩ and the internal resistor REQ= 5.8 kΩ
must be short-circuited by fixing the equalization switch input at 70 µs (pin 15 left open-circuit). To activate the inputs
INA1 and INB1, pin 10 (HSW) might be left open-circuit. In this event the DC level at pin 10 (HSW) is 0.8V
2. It is recommended to switch off VCC with a gradient of 400 V/s at maximum to avoid plops on the tape in the event
of contact between tape and tape head while switching off.
pin voltageload current +100 to −100 µA−0.8VCC−V
input currentV
pin voltagetime constant 70 µs active
pin voltagetime constant 120 µs active0−
EQSW
= 0 to V
CC
−180−+180µA
1
⁄2VCC+ 0.5 −V
CC
1
⁄2VCC− 0.5 V
pin voltageload current +90 to −90 µA−0.8VCC−V
input currentV
HIGH-level pin voltageinputs INA1 and INB1 active
LOW-level pin voltageinputs INA2 and INB2 active0−
HSW
= 0 to V
CC
−170−+170µA
1
⁄2VCC+ 0.5 −V
CC
1
⁄2VCC− 0.5 V
CC
V
V
1997 Oct 077
Page 8
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
INTERNAL PIN CONFIGURATIONS
handbook, halfpage
+
100
Ω
1
5 V
80 Ω
MGE863
handbook, halfpage
TEA0676T
5.8
kΩ
3
5 V
MGE864
+
80 Ω
100
Ω
Fig.3 Pins 1 and 16: output channel.
handbook, halfpage
Fig.4 Pins 3 and 14: equalizer outputs.
MGE865
4
10 kΩ
1 pF
handbook, halfpage
5
MGE866
+
Fig.5 Pins 4 and 13: equalizer inputs.
1997 Oct 078
Fig.6 Pin 5: supply voltage.
Page 9
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
handbook, halfpage
6
5 V
100 kΩ
5 V
220 Ω
12
pF
+
MGE867
handbook, halfpage
TEA0676T
+
2.5 kΩ
5 V
7
2.5 kΩ
MGE868
Fig.7 Pins 6, 8, 9, 11: input channel.
handbook, halfpage
Fig.8 Pin 7: reference voltage.
10
8 V
+
MGE869
handbook, halfpage
15
8 V
+
MGE870
Fig.9 Pin 10: input head switch.
1997 Oct 079
Fig.10 Pin 15: input equalizer switch.
Page 10
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEST AND APPLICATION INFORMATION
handbook, full pagewidth
10 kΩ
equalizer
switch
70 µs
10 µF
OUTB
16
120 µs
18 kΩ
EQSW
15
330 kΩ
10 nF
EQOUTB
14
8.2 kΩ
180 Ω
1 kΩ
EQINB
13
GND
12
10 µF
200 Ω
INB1
11
10
µF
470
head
pF
switch
IN1
IN2
27 kΩ
HSWINB2
10
10
µF
TEA0676T
470
pF
10
200 Ω
µF
9
10 kΩ
TEA0676T
1
OUT A
10 µF
2
n.c.
LOGIC
3
EQOUT A
10 nF
330 kΩ
EQ
AMPLIFIER
EQ
AMPLIFIER
8.2 kΩ
4
EQINA
1 kΩ
180 Ω
5
V
CC
10 V
200 Ω
10 µF
INA1
PREAMPLIFIER
POWER
SUPPLY
PREAMPLIFIER
10
µF
470
pF
µF
8
INA2
10
µF
200 Ω
470
pF
MGE871
76
V
ref
100
Fig.11 Test circuit.
1997 Oct 0710
Page 11
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
handbook, full pagewidth
20 kΩ
10 µF
OUTB
16
EQSW
15
EQOUTB
14
EQ
AMPLIFIER
EQINB
13
10 kΩ
GND
12
200 Ω
INB1
11
470
pF
PREAMPLIFIER
head
switch
IN1
IN2
27 kΩ
HSWINB2
10
200 Ω
10
µF
TEA0676T
470
pF
9
TEA0676T
1
OUT A
10 µF
2
n.c.
LOGIC
3
EQOUT A
EQ
AMPLIFIER
20 kΩ
10 kΩ
4
EQINA
5
V
CC
10 V
200 Ω
INA1
POWER
SUPPLY
PREAMPLIFIER
470
pF
10 Ω
µF
200 Ω
8
INA2
470
pF
f = 900 MHz
Vi = 6 V (RMS)
MGE872
76
V
ref
100
40 Ω
Fig.12 EMC test diagram.
1997 Oct 0711
Page 12
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
handbook, full pagewidth
equalizer
switch
70 µs
10 µF
OUTB
16
120 µs
18 kΩ
EQSW
15
EQOUTB
14
10 kΩ
20 kΩ
EQINB
13
EQ
AMPLIFIER
GND
12
INB1
11
head
switch
IN1
IN2
27 kΩ
HSWINB2
10
PREAMPLIFIER
10
µF
TEA0676T
9
TEA0676T
1
OUT A
10 µF
2
n.c.
LOGIC
3
EQOUT A
EQ
AMPLIFIER
20 kΩ
10 kΩ
4
EQINA
POWER
SUPPLY
PREAMPLIFIER
5
V
CC
INA1
10 V
76
V
ref
100
8
INA2
µF
MGE873
Fig.13 Noise test diagram.
1997 Oct 0712
Page 13
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
LAYOUT OF PRINTED CIRCUIT BOARD FOR EMC TEST CIRCUIT
handbook, full pagewidth
50
54
TEA0676T
27 kΩ200 Ω
200 Ω
470 pF
0 Ω0 Ω
100 nF
40 Ω
10 Ω
470 pF
200 Ω
TEA0676T
0 Ω
Fig.14 Top side with components.
1997 Oct 0713
0 Ω
470 pF
10 kΩ
20 kΩ
20 kΩ
10 kΩ
470 pF
200 Ω
100 nF
MBH457
Page 14
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
handbook, full pagewidth
50
TEA0676T
54
X3
10 µF
S1
MP
100 µF100 µF
MP
HFDR.
MP
10 µF
10 µF
X2
X1
Fig.15 Bottom side with components.
X4
MBH458
1997 Oct 0714
Page 15
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 7.5 mm
D
c
y
Z
16
9
TEA0676T
SOT162-1
E
H
E
A
X
v M
A
pin 1 index
1
e
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
2.65
0.10
A
1
0.30
0.10
0.012
0.004
A2A
2.45
2.25
0.096
0.089
0.25
0.01
b
3
p
0.49
0.32
0.36
0.23
0.019
0.013
0.014
0.009
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
8
w M
b
p
0510 mm
scale
(1)E(1)(1)
cD
10.5
10.1
0.41
0.40
eHELLpQ
7.6
1.27
7.4
0.30
0.050
0.29
A
2
10.65
10.00
0.419
0.394
A
1
1.4
0.055
1.1
0.4
0.043
0.016
detail X
0.043
0.039
1.1
1.0
Q
3
0.250.1
0.01
A
θ
ywvθ
0.004
Z
0.9
0.4
0.035
0.016
o
8
o
0
(A )
L
p
L
0.25
0.01
OUTLINE
VERSION
SOT162-1
IEC JEDEC EIAJ
075E03 MS-013AA
REFERENCES
1997 Oct 0715
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
Page 16
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
(order code 9398 652 90011).
TEA0676T
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
1997 Oct 0716
Page 17
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
TEA0676T
reverse tape decks
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 0717
Page 18
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
NOTES
1997 Oct 0718
Page 19
Philips SemiconductorsProduct specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
NOTES
1997 Oct 0719
Page 20
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +3140 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands547027/1200/02/pp20 Date of release: 1997 Oct 07Document order number: 9397 750 02743
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